Datasheet H11C3, H11C2, H11C6, H11C5, H11C4 Datasheet (Fairchild Semiconductor)

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H11C1 H11C2 H11C3 H11C4 H11C5 H11C6

PACKAGE

6

6

SCHEMATIC

1

ANODE

CATHODE

2

6

5

GATE

ANODE

1

3

1

N/C

4

CATHODE

6

1

DESCRIPTION

The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled
rectifier in a dual-in-line package

FEATURES

• High efficiency, low degradation, liquid epitaxial LED

• Underwriters Laboratory (UL) recognized fl File #E90700

• VDE recognized (File #94766) – ordering option .300. (e.g., H11C1.300)

• 200V/400V Peak blocking voltage

• High isolation voltage - 5300V AC (RMS)

APPLICATIONS

•Low power logic circuits

•Telecommunications equipment

•Portable electronics

• Solid state relays

• Interfacing coupling systems of different potentials and impedances.

• 10 A, T

• 25 W logic indicator lamp driver

• 200 V symmetrical transistor coupler (H11C1, H11C2, H11C3)

• 400 V symmetrical transistor coupler (H11C4, H11C5, H11C6)

2

L compatible, solid state relay

© 2003 Fairchild Semiconductor Corporation

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H11C1 H11C2 H11C3 H11C4 H11C5 H11C6

Parameter Symbol Device Value Units

TOTAL DEVICE

Storage Temperature T

Operating Temperature T

Lead Solder Temperature T

STG

OPR

SOL

EMITTER

Continuous Forward Current I

Reverse Voltage V

Forward Current - Peak (1 µs pulse, 300 pps) I

LED Power Dissipation

Derate above 25°C 1.33 mW/°C

F

R

F(pk)

P

D

DETECTOR

Power Dissipation (ambient)

Derate linearly above 25°C ambient 5.3 mW/°C

Power Dissipation (case)

Derate linearly above 25°C case 13.3 mW/°C

Peak Reverse Gate Voltage V

RMS On-State Current I

Peak On-State Current (100 µS, 1% duty cycle) I

Surge Current (10ms) I

Peak Forward Voltage V

Peak Forward Voltage V

P

D

P

D

GR

DM (RMS)

DM (Peak)

DM (Surge)

DM

DM

H11C1, H11C2, H11C3 200 V

H11C4, H11C5, H11C6 400 V

All -55 to +150 °C

All -55 to +100 °C

All 260 for 10 sec °C

All 60 mA

All 6 V

All 3.0 A

All

All

All

100 mW

400 mW

1W

All 6 V

All 300 mA

All 10 A

All 5 A

© 2003 Fairchild Semiconductor Corporation

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H11C1 H11C2 H11C3 H11C4 H11C5 H11C6

ELECTRICAL CHARACTERISTICS

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Test Conditions Symbol Device Min Typ* Max Unit

EMITTER

Input Forward
Voltage

Reverse Leakage
Current

Capacitance V

DETECTOR

R

Off-State Voltage

Reverse Voltage

GK

R

GK

R

GK

R

GK

= 10k Ω , T

= 10k Ω ,T

On-State Voltage I

V

DM

Off-State Current

Reverse Current

V

DM

V

RM

V

RM

= 200 V, T

= 400 V, T

I

= 10 mA V

F

V

= 3 V I

R

= 0 V, f = 1.0 MHz C

F

= 10k Ω , T

= 10k Ω ,T

= 200V, T

= 400V, T

= 100°C, I

A

= 100°C, I

A

= 100°C, I

A

= 100°C, I

A

= 300 mA V

TM

= 100°C, I

A

R

= 10k Ω

GK

= 100°C, I

A

R

= 10k Ω

GK

= 100 °C, I

A

R

= 10k Ω

GK

= 100 °C, I

A

R

= 10k Ω

GK

(T

= 25°C Unless otherwise specified.)

A

F

R

J

= 50µA

D

= 150µA H11C4, H11C5, H11C6 400

D

= 50µA

R

= 150µA H11C4, H11C5, H11C6 400

R

= 0 mA,

F

= 0 mA,

F

= 0 mA,

F

= 0 mA,

F

V

DM

V

RM

TM

I

DM

I

RM

H11C1, H11C2, H11C3 200

H11C1, H11C2, H11C3 200

H11C1, H11C2, H11C3 50 µA

H11C4, H11C5, H11C6 150

H11C1, H11C2, H11C3 50

H11C4, H11C5, H11C6 150

All 1.2 1.5 V

All 10 µA

All 50 pF

All 1.2 1.3 V

V

V

µA

(T

TRANSFER CHARACTERISTICS

= 25°C Unless otherwise specified.)

A

Characteristics Test Conditions Symbol Device Min Typ* Max Units

Input Current to Trigger

V

= 50 V, R

AK

V

= 100 V, R

AK

= 10 k Ω

GK

= 27 k Ω

GK

H11C1,H11C2,
H11C4, H11C5

I

FT

H11C3, H11C6 30 mA

H11C1,H11C2,
H11C4, H11C5

20

11

H11C3, H11C6 14

Coupled dv/dt, input to
output (figure 8)

*Typical values at T

© 2003 Fairchild Semiconductor Corporation

= 25°C

A

dv/dt ALL 500 V/µS

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Ω

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H11C1 H11C2 H11C3 H11C4 H11C5 H11C6

ISOLATION CHARACTERISTICS

Characteristic Test Conditions Symbol Min Typ* Max Units

Isolation Voltage (t = 1 min.) (note 1) V

Isolation Resistance (note 1) (V

Isolation Capacitance (note 1) (f = 1 MHz, V

*Typical values at T

Note

1. For this test, LED pins 1 and 2 are common, and SCR pins 4, 5 and 6 are common.

= 25°C

A

= 500 VDC) R

I-O

= 0) C

I-O

ISO

ISO

I-O

5300 V

11

10

0.8 pF

© 2003 Fairchild Semiconductor Corporation

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H11C1 H11C2 H11C3 H11C4 H11C5 H11C6

Figure 1. LED Forward Current vs. Forward Voltage

100

10

TA = 25˚C

1

TA = 100˚C

TA = -40˚C

FORWARD CURRENT - IF (mA)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

FORWARD VOLTAGE - VF (V)

Figure 3. Input Trigger Current vs. Temperature

RGK = 300 ohm

10

= 1K

R

GK

Figure 2. Trigger Current vs Anode-Cathode Voltage

100

RGK = 300 ohm

10

R

= 1K

GK

ED TRIGGER CURRENT
Z

I

, NORMAL

I

R

= 10K

GK

1

FT

0.1

= 27K

R

GK

R

= 56K

GK

NORMALIZED TO

= 50V

V

AK

R

= 10K

GK

= 25oC

T

A

110100

VAK, ANODE-CATHODE VOLTAGE (V)

Figure 4. Off-State Current vs. Temperature

1000

IZED

100

R

= 10K

1

, INPUT TRIGGER CURRENT, NORMALIZED

NORMALIZED TO

FT

T

I

= 25oC

A

= 10K

R

GK

V

= 50V

AK

0.1

-60 -40 -20 0 20 40 60 80 100

GK

= 27K

R

GK

R

= 56K

GK

TA, AMBIENT TEMPERATURE (oC)

© 2003 Fairchild Semiconductor Corporation

E FORWARD CURRENT, NORMAL

, OFF-STAT

DM

I

Page 5 of 11

= 400V

V

10

1

NORMALIZED TO

o

C

= 25

T

A

= 50V

V

AK

0.1
020406080100

AK

V

= 200V

AK

V

= 50V

AK

TA, AMBIENT TEMPERATURE (oC)

3/19/03

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H11C1 H11C2 H11C3 H11C4 H11C5 H11C6

Figure 5. Forward Blocking Voltage, VDM vs. Temperature

700

650

RGK = 10K, 20K

600

550

500

450

400

, FORWARD BLOCKING VOLTAGE (V)

DM

V

350

300

020406080100

TA, AMBIENT TEMPERATURE (oC)

R

R

GK

GK

= 50K

= 100K

1000

Figure 6. On-State Characteristics

100

TA = 25˚C

10

ON-STATE CURRENT - ITM (mA)

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TA = 100˚C

ON-STATE VOLTAGE - VTM (V)

Figure 7. Holding Current, I

10000

1000

100

, HOLDING CURRENT (µA)

H

I

10

-60 -40 -20 0 20 40 60 80 100

TA, AMBIENT TEMPERATURE (oC)

vs. Temperature

H

RGK = 300 ohm

R

= 1K

GK

R

= 10K

GK

= 27K

R

GK

R

= 56K

GK

© 2003 Fairchild Semiconductor Corporation

Page 6 of 11

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PHOTO SCR OPTOCOUPLERS

+5V

470

Ω

"

COIL"

H11

CX

56K

100

Ω

47

Ω

47

Ω

SC146D

0.

1

µ

F

LO

AD

"

CONT

ACT"

120

VA

C

(H11C1, H11C2, H11C3)

220 VAC (

H11C4,

H11

C5,

H11C6)

IN506

0

(4)

OUTPUT

INPUT

H11CX

H11C1 H11C2 H11C3 H11C4 H11C5 H11C6

TYPICAL APPLICATIONS

2

10A, T
STATE RELAY

Use of the H11C4 for high sensitiv­ity, 5300 V isolation capability,
provides this highly reliable solid
state relay design. This design is
compatible with 74, 74S and 74H
series T
and 120V AC (H11C1, H11C2,
H11C3) or 220V AC (H11C4,
H11C5, H11C6) loads up to 10A.

L COMPATIBLE, SOLID

2

L logic systems inputs

25W, LOGIC INDICATOR LAMP DRIVER

The high surge capability and non-reactive input characteris­tics of the H11C allow it to directly couple, without buffers,

2

T

L and DTL logic to indicator alarm devices, without danger

of introducing noise and logic glitches.

+5V

LOGIC
INPUT

470

Ω

H11CX

56K

200V/400V SYMMETRICAL TRANSISTOR COUPLER

Use of the high voltage PNP portion of the H11C provides a 400V transistor capable of
conducting positive and negative signals with current transfer ratios of over 1%. This function
is useful in remote instrumentation, high voltage power supplies and test equipment. Care
should be taken not to exceed the H11C 400mW power dissipation rating when used at high
voltages.

Vp = 800 Volts
tp = .010 Seconds
f = 25 Hertz

A

= 25 °C

T

+

Vp

.63 Vp

EXPONENTIAL

RAMP GEN.

tp

dv / dt

Vp

-

+100 VAC

100

H11C4

10 K

NDICATOR

I

LAMP

100

Ω

µ

F

0.1

Ω

H

Ω

OSCILLOSCOPE

(H11C1, H11C2, H11C3)

C

VA

120

H11C4,

220 VAC (

H11C5,

H11C6)

© 2003 Fairchild Semiconductor Corporation

Fig. 8 Coupled dv/dt - Test Circuit

Page 7 of 11

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)

)

)

)

)

)

H11C1 H11C2 H11C3 H11C4 H11C5 H11C6

Package Dimensions (Through Hole) Package Dimensions (Surface Mount)

0.350 (8.89)

0.330 (8.38)

3

2

5

4

0.070 (1.78)

0.045 (1.14)

Lead Coplanarity : 0.004 (0.10) MAX

1

6

0.100 (2.54)

PIN 1
ID.

0.020 (0.51)
MIN

TYP

0.270 (6.86)

0.240 (6.10)

0.300 (7.62)
TYP

0.016 (0.40) MIN

0.315 (8.00)
MIN

0.405 (10.30)
MAX

0.070 (1.78)

0.045 (1.14)

SEATING PLANE

0.200 (5.08)

0.115 (2.92)

0.154 (3.90)

0.100 (2.54)

0.022 (0.56)

0.016 (0.41)

0.100 (2.54)
TYP

0.350 (8.89)

0.330 (8.38)

PIN 1
ID.

0.020 (0.51)
MIN

0.016 (0.40)

0.008 (0.20)

0° to 15°

0.270 (6.86)

0.240 (6.10)

0.300 (7.62)
TYP

0.200 (5.08)

0.165 (4.18)

0.022 (0.56)

0.016 (0.41)

Package Dimensions (0.4” Lead Spacing) Recommended Pad Layout for

Surface Mount Leadform

0.016 (0.41)

0.008 (0.20)

0.270 (6.86)

0.240 (6.10)

0.350 (8.89)

0.330 (8.38)

0.070 (1.78)

0.045 (1.14)

0.200 (5.08)

0.135 (3.43)

SEATING PLANE

0.154 (3.90)

0.100 (2.54)

0.022 (0.56)

0.016 (0.41)

0.004 (0.10)
MIN

0.100 (2.54) TYP

Note

All dimensions are in inches (millimeters)

© 2003 Fairchild Semiconductor Corporation

0.016 (0.40)

0.008 (0.20)

0.400 (10.16)
TYP

0° to 15°

Page 8 of 11

0.415 (10.54

0.100 (2.54

0.295 (7.49

0.070 (1.78

0.060 (1.52

0.030 (0.76

3/19/03

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H11C1 H11C2 H11C3 H11C4 H11C5 H11C6

ORDERING INFORMATION

Option Order Entry Identifier Description

S.S Surface Mount Lead Bend

SD .SD Surface Mount; Tape and Reel

W.W 0.4" Lead Spacing

300 .300 VDE 0884

300W .300W VDE 0884, 0.4" Lead Spacing

3S .3S VDE 0884, Surface Mount

3SD .3SD VDE 0884, Surface Mount, Tape and Reel

MARKING INFORMATION

H11C1

V XX YY K

43

Definitions

1Fairchild logo

2Device number

VDE mark (Note: Only appears on parts ordered with VDE

3

option – See order entry table)

4Two digit year code, e.g., ‘03’

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

5

1

2

6

© 2003 Fairchild Semiconductor Corporation

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H11C1 H11C2 H11C3 H11C4 H11C5 H11C6

Carrier Tape Specifications

4.85 ± 0.20

0.30 ± 0.05

13.2 ± 0.2

0.1 MAX

User Direction of Feed

NOTE

All dimensions are in inches (millimeters)

Reflow Profile (Black Package, No Suffix)

300

250

200

150

100

Te mperature (°C)

50

0

0.5 1 1.5 2 2.5 3 3.5 4 4.5

0

225 C peak

Ramp up = 3

Time (Minute)

Time above 183° C, 60–150 sec

C/sec

4.0 ± 0.1

10.30 ± 0.20

215°C, 10–30 s

12.0 ± 0.1

4.0 ± 0.1

• Peak reflow temperature: 225° C (package surface temperature)

• Time of temperature higher than 183° C for 60–150 seconds

• One time soldering reflow is recommended

1.55 ± 0.05

Ø

1.75 ± 0.10

7.5 ± 0.1

9.55 ± 0.20

1.6 ± 0.1

Ø

16.0 ± 0.3

© 2003 Fairchild Semiconductor Corporation

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H11C1 H11C2 H11C3 H11C4 H11C5 H11C6

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

© 2003 Fairchild Semiconductor Corporation

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