Datasheet H11B815 Datasheet (Fairchild Semiconductor)

4-PIN PHOTODARLINGTON

OPTOCOUPLER

H11B815

PACKAGE

4

1

4

4

CATHODE

1

1

SCHEMATIC

1

2

4

COLLECTORANODE

3EMITTER

DESCRIPTION

The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual
in-line package.

FEATURES

• Compact 4-pin package

• Current Transfer Ratio: 600% minimum (at I

• High isolation voltage between input and output (5300 VRMS)

• UL recognized (File # E90700)

= 1 mA)

F

APPLICATIONS

•Power Supply Monitors

• Relay Contact Monitor

•Telephone/Telegraph Line Receiver

•Twisted Pair Line Receiver

• Digital Logic/Digital Logic

© 2002 Fairchild Semiconductor Corporation

Page 1 of 9

3/26/03

4-PIN PHOTODARLINGTON

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H11B815

ABSOLUTE MAXIMUM RATINGS

(No derating required up to 85°C)

Parameter Symbol Value Units

TOTAL DEVICE

Storage Temperature

Operating Temperature

Lead Solder Temperature

Total Device Power Dissipation @ T

= 25°C P

A

T

T

T

STG

OPR

SOL

D

-55 to +150 °C

-55 to +100 °C

260 for 10 sec °C

250 mW

EMITTER

I

V

F

P

I

F

R

(pk)

D

80 mA

6V

1A

140 mW

DC/Average Forward Input Current

Reverse Input Voltage

Forward Current - Peak (1µs pulse, 300pps)

LED Power Dissipation @ T

= 25°C

A

Derate above 25°C 1.33 mW/°C

DETECTOR

Collector-Emitter Voltage

Emitter-Collector Voltage

Continuous Collector Current

Detector Power Dissipation @ T

= 25°C

A

Derate above 25°C 2.0 mW/°C

V

V

CEO

ECO

I

C

P

D

35 V

6V

200 mA

200 mW

(T

ELECTRICAL CHARACTERISTICS

= 25°C Unless otherwise specified.)

A

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Test Conditions Symbol Min Typ** Max Unit

EMITTER

= 20 mA) V

Input Forward Voltage

Reverse Leakage Current

DETECTOR

Collector-Emitter Breakdown Voltage

Emitter-Collector Breakdown Voltage

Collector-Emitter Dark Current

Capacitance

© 2002 Fairchild Semiconductor Corporation

(I

F

(V

= 6.0 V) I

R

(I

= 1.0 mA, I

C

(I

= 100 µA, I

E

(V

= 10 V, I

CE

(V

= 0 V, f = 1 MHz) C

CE

= 0) BV

F

= 0) BV

F

= 0) I

F

Page 2 of 9

F

R

CEO

ECO

CEO

CE

35 60 V

68 V

1.2 1.50 V

0.001 10 µA

0.005 1 µA

8pF

3/26/03

Ω

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H11B815

TRANSFER CHARACTERISTICS

DC Characteristic Test Conditions Symbol Min Typ** Max Units

(I

Current Transfer Ratio, Collector-Emitter

Saturation Voltage

Rise Time (non saturated)

Fall Time (non saturated)

(I

= 10 mA, V

C

(I

= 10 mA, V

C

= 1 mA, V

F

= 20 mA, I

(I

F

= 2 V, R

CE

= 2 V, R

CE

= 2 V)

CE

= 5 mA) V

C

= 100V) t

L

= 100V) t

L

CTR 600 7,500 %

CE(sat)

r

f

0.8 1.0 V

300 µs

250 µs

ISOLATION CHARACTERISTICS

Characteristic Test Conditions Symbol Min Typ** Max Units

(I

Input-Output Isolation Voltage

Isolation Resistance

Isolation Capacitance

** All typicals at TA = 25°C

[ 1 µA, 1 min.) V

I-O

(V

= 500 VDC) R

I-O

(V

= &, f = 1 MHz) C

I-O

ISO

ISO

ISO

5300 Vac(rms)

11

10

0.5 pf

© 2002 Fairchild Semiconductor Corporation

Page 3 of 9

3/26/03

Typical Performance Curves

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H11B815

Fig. 1 Normalized Current Transfer Ratio

1.4

1.2

1.0

0.8

NT TRANSFER RAT IO - CTR

0.6

0.4

0.2

NORMALIZED CURRE

0.0

4.0

3.5

3.0

2.5

2.0

1.5

1.0

- NORMALIZED COLLECTOR CURRENT

0.5

C

I

0.0
012345

vs. Forward Current

VCE = 2 V
NORMALIZED TO I

0.1 1 10

IF - FORWARD CURRENT (mA)

Fig. 3 Normalized Collector Current

vs. Collector Emitter Voltage

I

F

VCE - COLLECTOR-EMITTER VOLTAGE (V)

= 1 mA

F

10 mA

5 mA

2 mA

1 mA

= 0.5 mA

NORMALIZED TO IF =1 mA, V

Fig. 2 Normalized Current Transfer Ratio

vs. Ambient Temperature

1.2

1.0

0.8

SFER RAT IO - CTR

0.6

0.4

0.2

IF = 1 mA, VCE = 2 V
NORMALIZED TO T

0.0

NORMALIZED CURRENT TRAN

-55 -25 0 25 50 75 100

Fig. 4 Collector-Emitter Dark Current

100000

VCE = 10 V

10000

1000

100

10

LLECTOR-EMITTER DARK CURRENT (nA)

1

= 2 V

CE

- CO

CEO

0.1

I

020406080100

= 25˚C

A

TA - AMBIENT TEMPERATURE (˚C)

vs. Ambient Temperature

TA - AMBIENT TEMPERATURE (˚C)

© 2002 Fairchild Semiconductor Corporation

Fig. 5 LED Forward Voltage vs. Forward Current

1.8

1.7

1.6

1.5

1.4

1.3

- FORWARD VOLTAGE (V)

F

1.2

V

1.1

1.0
110100

IF - LED FORWARD CURRENT (mA)

TA = 55˚C

TA = 25˚C

TA = 100˚C

Page 4 of 9

3/26/03

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Recommended Thermal Reflow Profile for Surface Mount DIP Package

H11B815

Temperature (°C)

250

200

150

100

50

0

01 2345

225°C

220°C: 10 sec to 40 sec

Time > 183°C: 120 sec to 180 sec

Time (Min)

© 2002 Fairchild Semiconductor Corporation

Page 5 of 9

3/26/03

4-PIN PHOTODARLINGTON

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H11B815

Package Dimensions (Through Hole)

0.270 (6.86)

0.250 (6.35)

0.270 (6.86)

0.250 (6.35)

0.016 (0.40)

15°

0.300 (7.62)
typ

0.008 (0.20)

SEATING PLANE

0.154 (3.90)

0.120 (3.05)

0.100 (2.54)
TYP

0.190 (4.83)

0.175 (4.45)

0.200 (5.08)

0.115 (2.92)

0.020 (0.51)
MIN

Package Dimensions (Surface Mount)

Package Dimensions (0.4" Lead Spacing)

0.270 (6.86)

0.250 (6.35)

0.190 (4.83)

0.175 (4.45)

LANE

SEATING P

0.154 (3.90)

0.120 (3.05)

0.200 (5.08)

0.115 (2.92)

0.004 (0.10)
MIN

0.100 (2.54)
TYP

0.270 (6.86)

0.250 (6.35)

0.400 (10.16)
TYP

0 to 15°

0.016 (0.40)

0.008 (0.20)

PCB Footprint Layout

0.270 (6.86)

0.250 (6.35)

0.190 (4.83)

0.175 (4.45)

0.200 (5.08)

SEATING PLANE

0.070 (1.78)

0.045 (1.14)

0.100 (2.54)
TYP

Lead Coplanarity 0.004 (0.10) MAX

0.115 (2.92)

0.020 (0.51)
MIN

0.022 (0.56)

0.016 (0.41)

NOTE

All dimensions are in inches (millimeters)

© 2002 Fairchild Semiconductor Corporation

0.300 (7.62)
TYP

0.315 (8.00)
MIN

0.405 (10.30)
MAX

0.016 (0.40)

0.008 (0.20)

Page 6 of 9

0.415 (10.54)

0.070 (1.78)

0.060 (1.52)

0.100 (2.54)

0.295 (7.49)

0.030 (0.76)

3/26/03

ORDERING INFORMATION

Option Order Entry Identifier Description

S.S Surface Mount Lead Bend

SD .SD Surface Mount; Tape and reel

W.W 0.4" Lead Spacing

300 .300 VDE 0884

300W .300W VDE 0884, 0.4" Lead Spacing

3S .3S VDE 0884, Surface Mount

3SD .3SD VDE 0884, Surface Mount, Tape & Reel

4-PIN PHOTODARLINGTON

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H11B815

MARKING INFORMATION

Definitions

1Fairchild logo

2Device number

3

4 One digit year code

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

4

XVT

3

H11B815

1

VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)

YY

5

6

2

© 2002 Fairchild Semiconductor Corporation

Page 7 of 9

3/26/03

Carrier Tape Specifications

5.00 ± 0.20

0.30 ± 0.05

13.2 ± 0.2

4.0 ± 0.1

12.0 ± 0.1

4.0 ± 0.1

4-PIN PHOTODARLINGTON

OPTOCOUPLER

H11B815

Ø1.55 ± 0.05

1.75 ± 0.10

7.5 ± 0.1

16.0 ± 0.3

4.95 ± 0.20

0.1 MAX

NOTE

All dimensions are in millimeters

10.30 ± 0.20

User Direction of Feed

Ø1.6 ± 0.1

© 2002 Fairchild Semiconductor Corporation

Page 8 of 9

3/26/03

4-PIN PHOTODARLINGTON

OPTOCOUPLER

H11B815

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

© 2002 Fairchild Semiconductor Corporation

Page 9 of 9

3/26/03