Datasheet H11AV2A-M, H11AV2-M, H11AV1A-M, H11AV1-M Datasheet (Fairchild Semiconductor)

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

6

H11AV1S-M, H11AV2S-M

DESCRIPTION

PACKAGE OUTLINE

6

1

H11AV1-M, H11AV2-M

6

1

H11AV1A-M, H11AV2A-M

SCHEMATIC

1

2

3NC

1

PIN 1. ANODE

2. CATHODE

3. NO CONNECTION

4. EMITTER

5. COLLECTOR

6. BASE

6

5

4

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line white package.

FEATURES

• H11AV1 and H11AV2 feature 0.3" input-output lead spacing

• H11AV1A and H11AV2A feature 0.4" input-output lead spacing

• UL recognized (File #E90700, Vol. 2)

• VDE recognized (File #102497)

- Add option V (e.g., H11AV1AV-M)

APPLICATIONS

•Power supply regulators

• Digital logic inputs

• Microprocessor inputs

© 2003 Fairchild Semiconductor Corporation

Page 1 of 10

6/30/03

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

(T

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Units

TOTAL DEVICE

Storage Temperature

Operating Temperature

Wave solder temperature (see page 9 for reflow solder profiles)

Total Device Power Dissipation @ T
Derate above 25°C

EMITTER

DC/Average Forward Input Current

Reverse Input Voltage

LED Power Dissipation @ T

= 25°C

A

Derate above 25°C

DETECTOR

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Collector Voltage

Detector Power Dissipation @ T
Derate above 25°C

A

= 25°C

A

= 25°C

= 25°C unless otherwise specified)

A

T

STG

T

OPR

T

SOL

P

D

I

F

V

R

P

D

V

CEO

V

CBO

V

ECO

P

D

-40 to +150 °C

-40 to +100 °C

260 for 10 sec °C

250 mW

2.94 mW/°C

60 mA

6V

120 mW

1.41 mW/°C

70 V

70 V

7V

150 mW

1.76 mW/°C

© 2003 Fairchild Semiconductor Corporation

Page 2 of 10

6/30/03

Ω

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

(T

ELECTRICAL CHARACTERISTICS

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Test Conditions Symbol Min Typ* Max Unit

EMITTER

Input Forward Voltage (I

Reverse Leakage Current (V

DETECTOR

Collector-Emitter Breakdown Voltage (I

Collector-Base Breakdown Voltage (I

Emitter-Collector Breakdown Voltage (I

Collector-Emitter Dark Current (V

Collector-Base Dark Current (V

Capacitance (V

= 10 mA) T

F

= 25°C unless otherwise specified)

A

= 25°C

A

= -55°C 0.9 1.28 1.7

A

= 100°C 0.7 1.05 1.4

T

A

= 6.0 V) I

R

= 1.0 mA, I

C

= 100 µA, I

C

= 100 µA, I

E

= 10 V, I

CE

= 0 V, f = 1 MHz) C

CE

= 0) BV

F

= 0) BV

F

= 0) BV

F

= 0) I

F

= 10 V) I

CB

V

F

R

CEO

CBO

ECO

CEO

CBO

CE

0.8 1.18 1.5

VT

10 µA

70 100 V

70 120 V

710 V

1 50 nA

0.5 nA

8pF

ISOLATION CHARACTERISTICS

Characteristic Test Conditions Symbol Min Typ* Max Units

Input-Output Isolation Voltage (f = 60 Hz, t = 1 sec) V

Isolation Resistance (V

Isolation Capacitance (V

= 500 VDC) R

I-O

= 0 V, f = 1 MHz) C

I-O

Note
* Typical values at T

= 25°C

A

ISO

ISO

ISO

7500 Vac(pk)

11

10

0.2 2 pF

© 2003 Fairchild Semiconductor Corporation

Page 3 of 10

6/30/03

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

(T

TRANSFER CHARACTERISTICS

DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit

Current Transfer Ratio,
Collector to Emitter

Collector-Emitter
Saturation Voltage

AC Characteristic

Non-Saturated
Tu r n-on Time

(I

(I

= 2 mA, V

C

= 10 mA, V

F

(I

= 2 mA, I

C

CC

(Fig. 11)

= 25°C Unless otherwise specified.)

A

= 10 V)

CE

= 20 mA) V

F

= 10 V, R

= 100 Ω )

L

CTR

CE (SAT)

T

ON

H11AV1

H11AV1A

H11AV2

H11AV2A

100 300 %

50

All 0.4 V

All 15 µs

Non Saturated
Tu r n-off Time

* Typical values at T

= 25°C

A

(I

= 2 mA, V

C

= 10 V, R

CC

(Fig. 11)

= 100 Ω )

L

T

ON

All 15 µs

© 2003 Fairchild Semiconductor Corporation

Page 4 of 10

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PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

TYPICAL PERFORMANCE CURVES

Fig. 1 LED Forward Voltage vs. Forward Current

1.8

1.7

1.6

1.5

1.4

1.3

- FORWARD VOLTAGE (V)

F

1.2

V

1.1

1.0

110100

IF - LED FORWARD CURRENT (mA)

Fig. 3 Normalized CTR vs. Ambient Temperature

1.4

1.2

1.0

0.8

0.6

NORMALIZED CTR

0.4

0.2

Normalized to

= 10 mA

I

F

= 25°C

T

A

-60 -40 -20 0 20 40 60 80 100

TA - AMBIENT TEMPERATURE (°C)

TA = -55°C

TA = 25°C

TA = 100°C

IF = 5 mA

IF = 10 mA

IF = 20 mA

Fig. 2 Normalized CTR vs. Forward Current

1.6
VCE = 5.0V

= 25°C

T

A

1.4

1.2

1.0

0.8

0.6

NORMALIZED CTR

0.4

0.2

0.0

02468101214 16 18 20

Normalized to

= 10 mA

I

F

IF - FORWARD CURRENT (mA)

Fig. 4 CTR vs. RBE (Unsaturated)

1.0

)

0.9

IF = 20 mA

0.8

RBE(OPEN)

0.7

/ CTR

0.6

RBE

0.5

0.4

0.3

0.2

0.1

0.0

NORMALIZED CTR ( CTR

10 100 1000

IF = 10 mA

IF = 5 mA

VCE= 5.0 V

RBE- BASE RESISTANCE (kΩ)

1.0

)

0.9

0.8

RBE(OPEN)

0.7

/ CTR

0.6

RBE

0.5

0.4

0.3

0.2

0.1

NORMALIZED CTR ( CTR

0.0

10 100 1000

RBE- BASE RESISTANCE (k Ω)

© 2003 Fairchild Semiconductor Corporation

Fig. 5 CTR vs. RBE (Saturated)

IF = 20 mA

IF = 10 mA

IF = 5 mA

VCE= 0.3 V

Page 5 of 10

Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current

100

TA = 25

˚C

10

1

IF = 2.5 mA

0.1

0.01

- COLLECTOR-EMITTER SATURATION VOLTAGE (V)

0.001

CE (SAT)

V

IF = 5 mA

0.01 0.1 1 10

IF = 10 mA

IC - COLLECTOR CURRENT (mA)

IF = 20 mA

6/30/03

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

1000

Fig. 7 Switching Speed vs. Load Resistor

IF = 10 mA
V

= 10 V

CC

= 25°C

T

100

µs)

10

1

SWITCHING SPEED - (

0.1

0.1 1 10 100

1.4

1.3

)

1.2

1.1

off(open)

1.0

/ t

)

BE

0.9

off(R

0.8

- (t

0.7

off

0.6

0.5

0.4

0.3

NORMALIZED t

0.2

0.1

10 100 1000 10000 100000

A

T

off

T

T

on

T

r

R-LOAD RESISTOR (kΩ)

Fig. 9 Normalized t

RBE- BASE RESISTANCE (k Ω)

f

off

vs. R

BE

V

CC =

I

C

= 100 Ω

R

L

= 2 mA

10 V

5.0

Fig. 8 Normalized ton vs. R

4.5

)

4.0

on(open)

/ t

3.5

)

BE

3.0

on(R

- (t

2.5

on

2.0

1.5

NORMALIZED t

1.0

0.5

10 100 1000 10000 100000

BE

RBE- BASE RESISTANCE (k Ω)

Fig. 10 Dark Current vs. Ambient Temperature

10000

VCE = 10 V

= 25°

C

T

A

1000

100

10

1

0.1

- COLLECTOR -EMITTER DARK CURRENT (nA)

0.01

CEO

I

0.001
020406080100

TA - AMBIENT TEMPERATURE

(°C)

V

CC =

I

C

R

L

10 V

= 2 mA

= 100 Ω

TEST CIRCUIT WAVE FORMS

I

F

INPUT

R

BE

© 2003 Fairchild Semiconductor Corporation

V

= 10V

CC

I

C

R

L

OUTPUT

I

Adjust

F to produce IC = 2 mA

10%

90%

t

Figure 11. Switching Time Test Circuit and Waveforms

Page 6 of 10

INPUT PULSE

OUTPUT PULSE

t

r

on

t

f

t

off

6/30/03

)

)

)

)

)

)

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

Package Dimensions (Through Hole) Package Dimensions (Surface Mount)

0.350 (8.89)

0.320 (8.13)

0.014 (0.36)

0.010 (0.25)

PIN 1 ID

0.260 (6.60)

0.240 (6.10)

0.100 [2.54]

0.012 (0.30)

0.008 (0.20)

0.390 (9.90)

0.332 (8.43)

0.320 (8.13)

0.035 (0.88)

0.006 (0.16)

0.070 (1.77)

0.040 (1.02)

SEATING PLANE

0.200 (5.08)

0.115 (2.93)

0.100 (2.54)

0.015 (0.38)

0.020 (0.50)

0.016 (0.41)

0.350 (8.89)

0.320 (8.13)

0.014 (0.36)

0.010 (0.25)

0.100 (2.54)

Pin 1 ID

0.260 (6.60)

0.240 (6.10)

0.320 (8.13)

15°

0.012 (0.30)

0.070 (1.77)

0.040 (1.02)

0.200 (5.08)

0.115 (2.93)

SEATING PLANE

0.025 (0.63)

0.020 (0.51)

0.020 (0.50)

0.016 (0.41)

Package Dimensions (0.4” Lead Spacing) Recommended Pad Layout for

Surface Mount Leadform

0.350 (8.89)

0.320 (8.13)

PIN 1 ID

0.260 (6.60)

0.240 (6.10)

0.070 (1.77)

0.040 (1.02)

0.200 (5.08)

0.115 (2.93)

SEATING PLANE

0.100 (2.54)

0.015 (0.38)

0.020 (0.50)

0.016 (0.41)

0.014 (0.36)

0.010 (0.25)

0.100 [2.54]

NOTE

All dimensions are in inches (millimeters)

© 2003 Fairchild Semiconductor Corporation

0.012 (0.30)

0.008 (0.21)

0.425 (10.80)

0.400 (10.16)

Page 7 of 10

0.425 (10.79

0.100 (2.54

0.305 (7.75

0.070 (1.78

0.060 (1.52

0.030 (0.76

6/30/03

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

ORDERING INFORMATION

Order Entry Identifier

Order Entry Identifier Option Example

S Surface Mount Lead Bend H11AV1S-M

SR2 Surface Mount; Tape and reel H11AV1SR2-M

N/A 0.4" Lead Spacing H11AV1A-M

V VDE 0884 H11AV1V-M

N/A VDE 0884, 0.4" Lead Spacing H11AV1AV-M

SV VDE 0884, Surface Mount H11AV1SV-M

SR2V VDE 0884, Surface Mount, Tape & Reel H11AV1SR2V-M

MARKING INFORMATION

Definitions

1Fairchild logo

2Device number

3

4

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

*Note – Parts built in the white package (M suffix) that do not have the ‘V’ option (see
definition 3 above) that are marked with date code ‘325’ or earlier are marked in the
portrait format.

1

H11AV1

V X YY Q

43

White Package

VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)

One digit year code

• One digit for white package parts, e.g., ‘3’

5

2

6

© 2003 Fairchild Semiconductor Corporation

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6/30/03

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

Carrier Tape Specifications

12.0 ± 0.1

4.5 ± 0.20

0.30 ± 0.05

21.0 ± 0.1

4.0 ± 0.1

2.0 ± 0.05

1.5 MIN

Ø

9.1 ± 0.20

1.75 ± 0.10

11.5 ± 1.0

24.0 ± 0.3

Reflow Profile

300

250

200

150

100

Temperature (°C)

50

0

0.5 1 1.5 2 2.5 3 3.5 4 4.5

0

0.1 MAX

User Direction of Feed

230°C, 10–30 s

245°C peak

Time above 183°C, 120–180 sec

Ramp up = 2–10°C/sec

Time (Minute)

10.1 ± 0.20

1.5 ± 0.1/-0

Ø

• Peak reflow temperature: 245°C (package surface temperature)

• Time of temperature higher than 183°C for 120–180 seconds

• One time soldering reflow is recommended

© 2003 Fairchild Semiconductor Corporation

Page 9 of 10

6/30/03

PHOTOTRANSISTOR OPTOCOUPLERS

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

© 2003 Fairchild Semiconductor Corporation

Page 10 of 10

6/30/03