Datasheet H11A1TVM Specification

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H11A1M
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECT
OR
6. BASE
2
1
3NC
5
6
4
Figure 2. Package Outlines
Figure 1. Schematic
6-Pin General Purpose Phototransistor Optocoupler
H1 1A1M — 6-Pin General Purpose Phototransistor Optocoupler
May 2017
Features
• Minimum Current Transfer Ratio, 50 % at IF = 10 mA, VCE = 10 V
• Safety and Regulatory Approvals: – UL1577, 4,170 VAC
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
for 1 Minute
RMS
Description
The general purpose optocoupler consists of a gallium arsenide infrared emitting diode driving a si licon photo­transistor in a standard plastic six-pin dual-in-line package.
Applications
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
Schematic Package Outlines
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1
Page 3
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage
< 150 V < 300 V
RMS RMS
Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175
Symbol Parameter Value Unit
Input-to-Output Test Voltage, Method A, V
V
PR
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC Input-to-Output Test Voltage, Method B, V
100% Production Test with tm = 1 s, Partial Discharge < 5 pC V V
IORM IOTM
Maximum Working Insulation Voltage 850 V
Highest Allowable Over-Voltage 6000 V
External Creepage 7mm External Clearance 7mm External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm
DTI Distance Through Insulation (Insulation Thickness) 0.5 mm
T
S
I
S,INPUT
P
S,OUTPUT
R
IO
Case Temperature
Input Current
Output Power
Insulation Resistance at TS, VIO = 500 V
(1)
(1)
(1)
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
x 1.6 = VPR,
IORM
x 1.875 = VPR,
IORM
(1)
1360 V
1594 V
> 10
I–IV I–IV
peak
peak
peak peak
175 °C 350 mA 800 mW
9
H1 1A1M — 6-Pin General Purpose Phototransistor Optocoupler
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1 2
Page 4
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended op erating conditions may affe ct device reliabil ity. The absolute maximum ratings are stress ratings only. T
Symbol Parameter Value Unit
TOTAL DEVICE
T
STG
T
OPR
T
J
T
SOL
P
D
EMITTER
I
F
V
R
(pk) Forward Current – Peak (300 µs, 2% Duty Cycle) 3 A
I
F
P
D
DETECTOR
V
CEO
V
CBO
V
ECO
P
D
Storage Temperature -40 to +125 °C Operating Temperature -40 to +100 °C Junction Temperature -40 to +125 ºC Lead Solder Temperature 260 for 10 seconds °C Total Device Power Dissipation @ TA = 25°C 270 mW Derate Above 25°C 2.94 mW/°C
DC/Average Forward Input Current 60 mA Reverse Input Voltage 6 V
LED Power Dissipation @ TA = 25°C 120 mW Derate Above 25°C 1.41 mW/°C
Collector-to-Emitter Voltage 30 V Collector-to-Base Voltage 70 V Emitter-to-Collector Voltage 7 V Detector Power Dissipation @ TA = 25°C 150 mW Derate Above 25°C 1.76 mW/°C
= 25°C unless otherwise specified.
A
H1 1A1M — 6-Pin General Purpose Phototransistor Optocoupler
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1 3
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Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
I
DETECTOR
BV BV BV
I
CEO
I
CBO
C
Trans fer Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
DC CHARACTERISTICS
CTR
V
CE(SAT)
AC CHARACTERISTICS
T
T
OFF
Input Forward Voltage IF = 10 mA 1.18 1.50 V
F
Reverse Leakage Current VR = 6.0 V 0.001 10 µA
R
Collector-to-Emitter Breakdown Voltage IC = 1.0 mA, IF = 0 30 100 V
CEO
Collector-to-Base Breakdown Voltage IC = 100 µA, IF = 0 70 120 V
CBO
Emitter-to-Collector Breakdown Voltage IE = 100 µA, IF = 0 7 10 V
ECO
Collector-to-Emitter Dark Current VCE = 10 V, IF = 0 1 50 nA Collector-to-Base Dark Current VCB = 10 V 20 nA Capacitance VCE = 0 V, f = 1 MHz 8 pF
CE
Current Transfer Ratio,Collector-to­Emitter
Collector-to-Emitter Saturation Voltage
Non-Saturated Turn-on Time
ON
Turn-off Time
= 10 mA, VCE = 10 V
I
F
I
= 0.5 mA, IF = 10 mA
C
= 10 mA, VCC = 10 V ,
I
F
= 100 (Figure 13)
R
L
= 10 mA, VCC = 10 V ,
I
F
RL = 100 (Figure 13)
50 %
s
s
0.4 V
H1 1A1M — 6-Pin General Purpose Phototransistor Optocoupler
Isolation Characteristics
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V C R
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1 4
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
ISO
Isolation Capacitance V
ISO
Isolation Resistance V
ISO
= 0 V, f = 1 MHz 0.2 pF
I-O
= ±500 VDC,
I-O
TA = 25°C
10
11
RMS
Page 6
Typical Performance Curves
Figure 4. Normalized CTR vs. Forward Current
6 8 10 12 14
IF - FORWARD CURRENT (mA)
024 618102
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 VCE = 5.0 V T
A
= 25°C
Normalized to I
F
= 10 mA
Figure 5. Normalized CTR vs. Ambient Temperature
-200 204060
TA - AMBIENT TEMPERATURE (°C)
-60 -40 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5 mA
I
F
= 10 mA
I
F
= 20 mA
Normalized to I
F
= 10 mA
T
A
= 25°C
10
IF - LED FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
Figure 3. LED Forward Voltage vs. Forward Current
1 100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 25°C
T
A
= -55°C
T
A
= 100°C
Figure 7. CTR vs. RBE (Saturated)
100
RBE- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20 mA
I
F
= 10 mA
I
F
= 5 mA
V
CE
= 0.3 V
Figure 6. CTR vs. RBE (Unsaturated)
100
RBE- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTR
RBE
/ CTR
RBE(OPEN)
)
10 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
CE
= 5.0 V
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
0.01 10
0.001
0.01
0.1
1
10
100
IF = 5 mA
IF = 20 mA
IF = 10 mA
Figure 8. Collector-Emitter Saturation Voltage
vs. Collector Current
0.1 1
IC - COLLECTOR CURRENT (mA)
V
CE (SAT)
- COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IF = 2.5 mA
T
A
= 25˚C
H1 1A1M — 6-Pin General Purpose Phototransistor Optocoupler
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1 5
Page 7
Typical Performance Curves (Continued)
NORMALIZED t
on
- (t
on(R
BE
)
/ t
on(open)
)
R
BE
- BASE RESISTANCE (kΩ)
Figure 10. Normalized ton vs. R
BE
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
CC =
10 V
I
C
= 2 mA
R
L
= 100 Ω
SWITCHING SPEED - (μs)
Figure 9. Switching Speed vs. Load Resistor
110
R - LOAD RESISTOR (kΩ)
0.1 100
0.1
1
10
100
1000
T
off
IF = 10 mA V
CC
= 10 V
T
A
= 25°C
T
r
T
on
T
f
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V
CC =
10 V
I
C
= 2 mA
R
L
= 100 Ω
NORMALIZED t
off
- (t
off(R
BE
)
/ t
off(open)
)
10 100 1000 10000 100000
R
BE
- BASE RESISTANCE (kΩ)
Figure 11. Normalized t
off
vs. R
BE
Figure 12. Dark Current vs. Ambient Temperature
40 60
TA - AMBIENT TEMPERATURE
(°C)
0 20 80 100
I
CEO
- COLLECTOR -EMITTER DARK CURRENT (nA)
0.001
0.01
0.1
1
10
100
1000
10000
VCE = 10 V T
A
= 25°
C
OUTPUT PULSE
INPUT PULSE
t
r
t
f
INPUT
I
F
R
L
R
BE
V
CC
= 10 V
OUTPUT
t
on
10%
90%
t
off
I
C
Adjust
I
F to produce IC = 2 mA
H1 1A1M — 6-Pin General Purpose Phototransistor Optocoupler
Switching Time Test Circuit and Waveforms
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1 6
Figure 13. Switching Time Test Circuit and Waveforms
Page 8
Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>24°C = 42 s
Time above
183°C = 90 s
360
1.822°C/s Ramp-up rate
33 s
H1 1A1M — 6-Pin General Purpose Phototransistor Optocoupler
Figure 14. Reflow Profile
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1 7
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Ordering Information
H11A1
V X YY Q
1
2
6
43
5
Part Number Package Packing Method
H11A1M DIP 6-Pin Tube (50 Units) H11A1SM SMT 6-Pin (Lead Bend) Tube (50 Units) H11A1SR2M SMT 6-Pin (Lead Bend) Tap e and Reel (1000 Units) H11A1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) H11A1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) H11A1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) H11A1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
Marking Information
H1 1A1M — 6-Pin General Purpose Phototransistor Optocoupler
Table 1. Top Mark Definitions
1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., “6” 5 Digit Work Week, Ranging from “01” to “53” 6 Assembly Package Code
Figure 15. Top Mark
©2000 Fairchild Semiconductor Corporation www.fairchildsemi.com H11A1M Rev. 1.1 8
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