Datasheet GSOT05 Specification

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20421

1

2

3

Single-Line ESD Protection in SOT-23

MARKING (example only)

YYY

XX

20512

XX

20357

GSOT03 to GSOT36

Vishay Semiconductors

FEATURES

• Single-line ESD-protection device

• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge

• Space saving SOT-23 package

• AEC-Q101 qualified

1

•e3 - Sn

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

YYY = type code (see table below)
XX = date code

ORDERING INFORMATION

PART
NUMBER
(EXAMPLE)

GSOT05- E 3 -08 GSOT05-E3-08

GSOT05- G 3 -08 GSOT05-G3-08

GSOT05- H E 3 -08 GSOT05-HE3-08

GSOT05- H G 3 -08 GSOT05-HG3-08

GSOT05- E 3 -18 GSOT05-E3-18

GSOT05- G 3 -18 GSOT05-G3-18

GSOT05- H E 3 -18 GSOT05-HE3-18

GSOT05- H G 3 -18 GSOT05-HG3-18

AEC-Q101

QUALIFIED

ENVIRONMENTAL AND QUALITY CODE PACKAGING CODE

RoHS-COMPLIANT +

LEAD (Pb)-FREE TERMINATIONS

STANDARD GREEN

TIN

PLATED

3K PER 7" REEL

(8 mm TAPE),

15K/BOX = MOQ

10K PER 13" REEL

(8 mm TAPE),

10K/BOX = MOQ

ORDERING CODE

(EXAMPLE)

Rev. 2.1, 27-Feb-13

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

Document Number: 85807

www.vishay.com

PACKAGE DATA

DEVICE
NAME

GSOT03 SOT-23

GSOT04 SOT-23

GSOT05 SOT-23

GSOT08 SOT-23

GSOT12 SOT-23

GSOT15 SOT-23

GSOT24 SOT-23

GSOT36 SOT-23

PACKAGE

NAME

TYPE

CODE

ENVIRONMENTAL

STATUS

WEIGHT

03 Standard 8.8 mg

03G Green 8.1 mg

04 Standard 8.8 mg

04G Green 8.1 mg

05 Standard 8.8 mg

05G Green 8.1 mg

08 Standard 8.8 mg

08G Green 8.1 mg

12 Standard 8.8 mg

12G Green 8.1 mg

15 Standard 8.8 mg

15G Green 8.1 mg

24 Standard 8.8 mg

24G Green 8.1 mg

36 Standard 8.8 mg

36G Green 8.1 mg

MOLDING

COMPOUND

FLAMMABILITY

RATING

UL 94 V-0

UL 94 V-0

UL 94 V-0

UL 94 V-0

UL 94 V-0

UL 94 V-0

UL 94 V-0

UL 94 V-0

GSOT03 to GSOT36

Vishay Semiconductors

MOISTURE

SENSITIVITY LEVEL

MSL level 1

(according J-STD-020)

MSL level 1

(according J-STD-020)

MSL level 1

(according J-STD-020)

MSL level 1

(according J-STD-020)

MSL level 1

(according J-STD-020)

MSL level 1

(according J-STD-020)

MSL level 1

(according J-STD-020)

MSL level 1

(according J-STD-020)

SOLDERING

CONDITIONS

260 °C/10 s at terminals

260 °C/10 s at terminals

260 °C/10 s at terminals

260 °C/10 s at terminals

260 °C/10 s at terminals

260 °C/10 s at terminals

260 °C/10 s at terminals

260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS GSOT03

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current

Peak pulse power

ESD immunity

acc. IEC 61000-4-5, t

acc. IEC 61000-4-5, t

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV

Pin 3 to 1

= 8/20 μs; single shot

p

Pin 3 to 1

= 8/20 μs; single shot

p

Operating temperature Junction temperature T

Storage temperature T

I

P

V

PPM

PP

ESD

STG

30 A

369 W

± 30 kV

J

- 40 to + 125 °C

- 55 to + 150 °C

ABSOLUTE MAXIMUM RATINGS GSOT04

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current

Peak pulse power

ESD immunity

Pin 3 to 1

acc. IEC 61000-4-5, t

= 8/20 μs; single shot

p

Pin 3 to 1

acc. IEC 61000-4-5, t

= 8/20 μs; single shot

p

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV

I

V

Operating temperature Junction temperature T

Storage temperature T

PPM

P

ESD

STG

PP

J

30 A

429 W

± 30 kV

- 40 to + 125 °C

- 55 to + 150 °C

Rev. 2.1, 27-Feb-13

2

Document Number: 85807

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

GSOT03 to GSOT36

www.vishay.com

ABSOLUTE MAXIMUM RATINGS GSOT05

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current

Peak pulse power

ESD immunity

acc. IEC 61000-4-5, t

acc. IEC 61000-4-5, t

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV

Pin 3 to 1

= 8/20 μs; single shot

p

Pin 3 to 1

= 8/20 μs; single shot

p

Operating temperature Junction temperature T

Storage temperature T

ABSOLUTE MAXIMUM RATINGS GSOT08

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current

Peak pulse power

ESD immunity

acc. IEC 61000-4-5, t

acc. IEC 61000-4-5, t

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV

Operating temperature Junction temperature T

Storage temperature T

Pin 3 to 1

= 8/20 μs; single shot

p

Pin 3 to 1

= 8/20 μs; single shot

p

Vishay Semiconductors

I

P

V

I

P

V

PPM

PP

ESD

J

STG

PPM

PP

ESD

J

STG

30 A

480 W

± 30 kV

- 40 to + 125 °C

- 55 to + 150 °C

18 A

345 W

± 30 kV

- 40 to + 125 °C

- 55 to + 150 °C

ABSOLUTE MAXIMUM RATINGS GSOT12

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current

Peak pulse power

ESD immunity

Pin 3 to 1

acc. IEC 61000-4-5, t

= 8/20 μs; single shot

p

Pin 3 to 1

acc. IEC 61000-4-5, t

= 8/20 μs; single shot

p

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV

I

V

Operating temperature Junction temperature T

Storage temperature T

PPM

P

ESD

STG

PP

J

12 A

312 W

± 30 kV

- 40 to + 125 °C

- 55 to + 150 °C

ABSOLUTE MAXIMUM RATINGS GSOT15

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current

Peak pulse power

ESD immunity

Pin 3 to 1

acc. IEC 61000-4-5, t

= 8/20 μs; single shot

p

Pin 3 to 1

acc. IEC 61000-4-5, t

= 8/20 μs; single shot

p

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV

I

V

Operating temperature Junction temperature T

Storage temperature T

PPM

P

ESD

STG

PP

J

8A

230 W

± 30 kV

- 40 to + 125 °C

- 55 to + 150 °C

ABSOLUTE MAXIMUM RATINGS GSOT24

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current

Peak pulse power

ESD immunity

acc. IEC 61000-4-5, t

acc. IEC 61000-4-5, t

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV

Pin 3 to 1

= 8/20 μs; single shot

p

Pin 3 to 1

= 8/20 μs; single shot

p

Operating temperature Junction temperature T

Storage temperature T

Rev. 2.1, 27-Feb-13

3

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

I

P

V

PPM

PP

ESD

STG

5A

235 W

± 30 kV

J

- 40 to + 125 °C

- 55 to + 150 °C

Document Number: 85807

GSOT03 to GSOT36

20422

L1

1

2

3

Ground

BiAs

www.vishay.com

ABSOLUTE MAXIMUM RATINGS GSOT36

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current

Peak pulse power

ESD immunity

acc. IEC 61000-4-5, t

acc. IEC 61000-4-5, t

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV

Pin 3 to 1

= 8/20 μs; single shot

p

Pin 3 to 1

= 8/20 μs; single shot

p

Operating temperature Junction temperature T

Storage temperature T

BiAs-MODE (1-line Bidirectional Asymmetrical protection mode)

With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and
pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is
between 0 V (ground level) and the specified maximum reverse working voltage (V
pin 3 offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (V

) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance

C

and inductance) of the protection diode.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction
through the protection diode. The low forward voltage (V

) clamps the negative transient close to the ground level.

F

Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behavior is Bidirectional and
Asymmetrical (BiAs).

RWM

Vishay Semiconductors

I

PPM

P

PP

V

ESD

J

STG

) the protection diode between pin 1 and

3.5 A

248 W

± 30 kV

- 40 to + 125 °C

- 55 to + 150 °C

ELECTRICAL CHARACTERISTICS GSOT03 (T

= 25 °C unless otherwise specified)

amb

between pin 3 and pin 1

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected N

Reverse stand-off voltage at I

Reverse current at V

Reverse breakdown voltage at I

Reverse clamping voltage

Forward clamping voltage

Capacitance

at V

= 100 μA V

R

= 3.3 V I

R

= 1 mA V

R

= 1 A

at I

PP

at I

= I

PP

at I

PP

at V

R

= 1.6 V; f = 1 MHz - 260 - pF

R

= 30 A - 10 12.3 V

PPM

= 1 A

at I

PP

= I

= 30 A - 4.5 - V

PPM

= 0 V; f = 1 MHz

channel

RWM

R

BR

V

C

V

F

C

D

Rev. 2.1, 27-Feb-13

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4

--1lines

--3.3V

- - 100 μA

44.6- V

-5.77.5V

-11.2V

- 420 600 pF

Document Number: 85807

www.vishay.com

GSOT03 to GSOT36

Vishay Semiconductors

ELECTRICAL CHARACTERISTICS GSOT04 (T

= 25 °C unless otherwise specified)

amb

between pin 3 and pin 1

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected N

Reverse stand-off voltage at I

Reverse current at V

Reverse breakdown voltage at I

Reverse clamping voltage

Forward clamping voltage

Capacitance

at V

at V

ELECTRICAL CHARACTERISTICS GSOT05 (T

= 20 μA V

R

= 4 V I

R

= 1 mA V

R

= 1 A

at I

PP

= I

at I

at I

PP

PP

R

R

= 30 A - 11.2 14.3 V

PPM

= 1 A

at I

PP

= I

= 30 A - 4.5 - V

PPM

= 0 V; f = 1 MHz

= 2 V; f = 1 MHz - 200 - pF

= 25 °C unless otherwise specified)

amb

channel

RWM

R

BR

V

C

V

F

C

D

--1lines

--4V

- - 20 μA

56.1- V

-7.59 V

-11.2V

- 310 450 pF

between pin 3 and pin 1

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected N

Reverse stand-off voltage at I

Reverse current at V

Reverse breakdown voltage at I

Reverse clamping voltage

Forward clamping voltage

Capacitance

at V

at V

= 10 μA V

R

= 5 V I

R

= 1 mA V

R

= 1 A

at I

PP

at I

= I

PP

at I

PP

R

= 2.5 V; f = 1 MHz - 150 - pF

R

= 30 A - 12 16 V

PPM

= 1 A

at I

PP

= I

= 30 A - 4.5 - V

PPM

= 0 V; f = 1 MHz

channel

RWM

R

BR

V

C

V

F

C

D

--1lines

--5V

- - 10 μA

66.8- V

-78.7V

-11.2V

- 260 350 pF

ELECTRICAL CHARACTERISTICS GSOT08 (T

= 25 °C unless otherwise specified)

amb

between pin 3 and pin 1

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected N

Reverse stand-off voltage at I

Reverse current at V

Reverse breakdown voltage at I

Reverse clamping voltage

Forward clamping voltage

Capacitance

at V

at V

Rev. 2.1, 27-Feb-13

= 5 μA V

R

= 8 V I

R

= 1 mA V

R

at I

= 1 A

PP

at I

= I

= 18 A - 15.2 19.2 V

PPM

at I

= 1 A

PP

= I

= 18 A - 3 - V

PPM

= 0 V; f = 1 MHz

= 4 V; f = 1 MHz - 80 - pF

at I

PP

PP

R

R

5

channel

RWM

R

BR

V

C

V

F

C

D

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

--1lines

--8V

--5μA

910- V

- 10.7 13 V

-11.2V

- 160 250 pF

Document Number: 85807

www.vishay.com

GSOT03 to GSOT36

Vishay Semiconductors

ELECTRICAL CHARACTERISTICS GSOT12 (T

= 25 °C unless otherwise specified)

amb

between pin 3 and pin 1

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected N

Reverse stand-off voltage at I

Reverse current at V

Reverse breakdown voltage at I

Reverse clamping voltage

Forward clamping voltage

Capacitance

at V

at V

ELECTRICAL CHARACTERISTICS GSOT15 (T

= 1 μA V

R

= 12 V I

R

= 1 mA V

R

at I

= 1 A

PP

= I

at I

at I

PP

PP

R

R

= 12 A - 21.2 26 V

PPM

at I

= 1 A

PP

= I

= 12 A - 2.2 - V

PPM

= 0 V; f = 1 MHz

= 6 V; f = 1 MHz - 50 - pF

= 25 °C unless otherwise specified)

amb

channel

RWM

R

BR

V

C

V

F

C

D

--1lines

--12V

--1μA

13.5 15 - V

- 15.4 18.7 V

-11.2V

- 115 150 pF

between pin 3 and pin 1

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected N

Reverse stand-off voltage at I

Reverse current at V

Reverse breakdown voltage at I

Reverse clamping voltage

Forward clamping voltage

Capacitance

at V

at V

= 1 μA V

R

= 15 V I

R

= 1 mA V

R

= 1 A

at I

PP

at I

= I

PP

at I

at I

PP

= 0 V; f = 1 MHz

R

= 7.5 V; f = 1 MHz - 35 - pF

R

= 8 A - 24.8 28.8 V

PPM

= 1 A

PP

= I

= 8 A - 1.8 - V

PPM

channel

RWM

R

BR

V

C

V

F

C

D

--1lines

--15V

--1μA

16.5 18 - V

- 19.4 23.5 V

-11.2V

- 90 120 pF

ELECTRICAL CHARACTERISTICS GSOT24 (T

= 25 °C unless otherwise specified)

amb

between pin 3 and pin 1

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected N

Reverse stand-off voltage at I

Reverse current at V

Reverse breakdown voltage at I

Reverse clamping voltage

Forward clamping voltage

Capacitance

at V

at V

Rev. 2.1, 27-Feb-13

= 1 μA V

R

= 24 V I

R

= 1 mA V

R

= 1 A

at I

PP

at I

= I

PP

at I

at I

PP

= 0 V; f = 1 MHz

R

= 12 V; f = 1 MHz - 20 - pF

R

= 5 A - 41 47 V

PPM

= 1 A

PP

= I

= 5 A - 1.4 - V

PPM

6

channel

RWM

R

BR

V

C

V

F

C

D

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

--1lines

--24V

--1μA

27 30 - V

-3441V

-11.2V

-6580pF

Document Number: 85807

www.vishay.com

10

100

1

0.01

0.1

0.001

0.5 0.6 0.7 0.8 0.9

I

F

in mA

VF in V

GSOT03 to GSOT36

Vishay Semiconductors

ELECTRICAL CHARACTERISTICS GSOT36 (T

= 25 °C unless otherwise specified)

amb

between pin 3 and pin 1

PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT

Protection paths Number of lines which can be protected N

Reverse stand-off voltage at I

Reverse current at V

Reverse breakdown voltage at I

Reverse clamping voltage

Forward clamping voltage

Capacitance

at I

at I

at V

at V

= 1 μA V

R

= 36 V I

R

= 1 mA V

R

= 1 A

at I

PP

= I

PP

PP

R

= 18 V; f = 1 MHz - 12 - pF

R

= 3.5 A - 59 71 V

PPM

= 1 A

at I

PP

= I

= 3.5 A - 1.3 - V

PPM

= 0 V; f = 1 MHz

in V

R

V

8

7

6

5

4

3

channel

RWM

R

BR

V

C

V

F

C

D

--1lines

--36V

--1μA

39 43 - V

-4960V

-11.2V

-5265pF

Pin 3 - 1

TJ = 25 °C

GSOT05

GSOT04

GSOT03

2

1

0

0.01 0.1 1 10 100 1000 10 000 100 000

IR in µA

Fig. 1 - Typical Forward Current IF vs. Forward Voltage V

50

GSOT36

45

40

35

GSOT24

30

25

in V

R

V

GSOT15

20

15

GSOT12

10

GSOT08

5

0

0.01 0.1 1 10 100 1000 10 000 100 000

Pin 3 - 1

TJ = 25 °C

F

Fig. 3 - Typical Reverse Voltage VR vs. Reverse Current I

R

IR in µA

Fig. 2 - Typical Reverse Voltage VR vs. Reverse Current I

R

Rev. 2.1, 27-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

7

For technical questions, contact: [e-mail]

Document Number: 85807

www.vishay.com

Foot print recommendation:

Rev. 8 - Date: 23.Sept.2009
17418

Document no.: 6.541-5014.01-4

0.9 (0.035)

1 (0.039)

0.9 (0.035)

1 (0.039)

1.43 (0.056)

0.45 (0.018)

0.35 (0.014)

2.8 (0.110)

3.1 (0.122)

0.45 (0.018)

0.35 (0.014)

0.45 (0.018)

0.35 (0.014)

0.1 (0.004) max.

2.35 (0.093)

2.6 (0.102)

0.175 (0.007)

0.098 (0.004)

1.15 (0.045)

0.9 (0.035)

1.20 (0.047)

0.95 (0.037) 0.95 (0.037)

2 (0.079)

0.7 (0.028)

0.9 (0.035)

0° to 8°

0.2 (0.008)

0.3 (0.012)

0.5 (0.020)

0.550 ref. (0.022 ref.)

SOT-23

Top view

Unreeling direction

Orientation in carrier tape

SOT-23
S8-V-3929.01-006 (4)

04.02.2010
22607

PACKAGE DIMENSIONS in millimeters (inches): SOT-23

GSOT03 to GSOT36

Vishay Semiconductors

Rev. 2.1, 27-Feb-13

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

8

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Document Number: 85807

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000