Page 1
Two-Line ESD-Protection in SOT23
Features
• Two-line ESD-protection device
• ESD-immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Space saving SOT23 package
• Lead (Pb)-free component
• Lead finish = "e3" = matte tin (Sn)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Marking (example only)
YYY
XX
XX
20357
e3
YYY = Type code (see table below)
XX = Date code
GSOT03C to GSOT36C
Vishay Semiconductors
1
3
20456
20512
2
1
Ordering Information
Device name Ordering code
GSOT03C GSOT03C-GS08 3000 15000
GSOT04C GSOT04C-GS08 3000 15000
GSOT05C GSOT05C-GS08 3000 15000
GSOT08C GSOT08C-GS08 3000 15000
GSOT12C GSOT12C-GS08 3000 15000
GSOT15C GSOT15C-GS08 3000 15000
GSOT24C GSOT24C-GS08 3000 15000
GSOT36C GSOT36C-GS08 3000 15000
Taped units per reel
(8 mm tape on 7" reel)
Minimum order quantity
Package Data
Device name
GSOT03C SOT23 03C 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT04C SOT23 04C 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT05C SOT23 05C 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT08C SOT23 08C 8.8 mg UL 94 V-0 MSLlevel 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT12C SOT23 12C 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT15C SOT23 15C 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT24C SOT23 24C 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
GSOT36C SOT23 36C 8.8 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
Package
name
Marking
code
Weight
Molding compound
flammability rating
Moisture sensitivity level Soldering conditions
Document Number 85824
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
1
Page 2
GSOT03C to GSOT36C
Vishay Semiconductors
Absolute Maximum Ratings
GSOT03C
Rating Test con d iti o n Symbol Val ue Unit
Pin 1 to 3 or pin 2 to 3
Peak pulse current
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
Pin 1 to 3 or pin 2 to 3
Peak pulse power
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature Junction temperature
Storage temperature
GSOT04C
Rating Test con d iti o n Symbol Val ue Unit
Pin 1 to 3 or pin 2 to 3
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature Junction temperature
Storage temperature
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
Pin 1 to 3 or pin 2 to 3
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
I
I
P
P
V
V
T
I
I
P
P
V
V
T
PPM
PPM
PP
PP
ESD
ESD
T
STG
PPM
PPM
PP
PP
ESD
ESD
T
STG
30 A
30 A
369 W
504 W
± 30 kV
± 30 kV
J
- 40 to + 125 °C
- 55 to + 150 °C
30 A
30 A
429 W
564 W
± 30 kV
± 30 kV
J
- 40 to + 125 °C
- 55 to + 150 °C
GSOT05C
Rating Test con d iti o n Symbol Val ue Unit
Peak pulse current
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
Peak pulse power
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature Junction temperature
Storage temperature
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2
Pin 1 to 3 or pin 2 to 3
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
Pin 1 to 3 or pin 2 to 3
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
I
I
P
P
V
V
T
PPM
PPM
PP
PP
ESD
ESD
T
STG
30 A
30 A
480 W
612 W
± 30 kV
± 30 kV
J
- 40 to + 125 °C
- 55 to + 150 °C
Document Number 85824
Rev. 1.7, 21-Apr-08
Page 3
GSOT08C
Rating Test condition Symbol Val ue Unit
Pin 1 to 3 or pin 2 to 3
Peak pulse current
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
Pin 1 to 3 or pin 2 to 3
Peak pulse power
ESD immunity
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
Operating temperature Junction temperature
Storage temperature
GSOT12C
Rating Test condition Symbol Val ue Unit
Pin 1 to 3 or pin 2 to 3
Peak pulse current
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
Pin 1 to 3 or pin 2 to 3
Peak pulse power
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature Junction temperature
Storage temperature
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
GSOT03C to GSOT36C
Vishay Semiconductors
I
I
P
P
V
V
T
I
I
P
P
V
V
T
PPM
PPM
PP
PP
ESD
ESD
T
STG
PPM
PPM
PP
PP
ESD
ESD
T
STG
J
J
18 A
18 A
345 W
400 W
± 30 kV
± 30 kV
- 40 to + 125 °C
- 55 to + 150 °C
12 A
12 A
312 W
337 W
± 30 kV
± 30 kV
- 40 to + 125 °C
- 55 to + 150 °C
GSOT15C
Rating Test condition Symbol Val ue Unit
Pin 1 to 3 or pin 2 to 3
Peak pulse current
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
Pin 1 to 3 or pin 2 to 3
Peak pulse power
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature Junction temperature
Storage temperature
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
I
I
P
P
V
V
T
PPM
PPM
PP
PP
ESD
ESD
T
STG
8A
8A
230 W
245 W
± 30 kV
± 30 kV
J
- 40 to + 125 °C
- 55 to + 150 °C
Document Number 85824
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
3
Page 4
GSOT03C to GSOT36C
Vishay Semiconductors
GSOT24C
Rating Test con d iti o n Symbol Val ue Unit
Peak pulse current
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
Peak pulse power
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature Junction temperature
Storage temperature
GSOT36C
Rating Test con d iti o n Symbol Val ue Unit
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature Junction temperature
Storage temperature
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
Acc. IEC 61000-4-5, t
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Pin 1 to 3 or pin 2 to 3
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
Pin 1 to 3 or pin 2 to 3
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
Pin 1 to 3 or pin 2 to 3
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
Pin 1 to 3 or pin 2 to 3
= 8/20 µs; single shot
P
= 8/20 µs; single shot
P
I
I
P
P
V
V
T
I
I
P
P
V
V
T
PPM
PPM
PP
PP
ESD
ESD
T
STG
PPM
PPM
PP
PP
ESD
ESD
T
STG
5A
5A
235 W
240 W
± 30 kV
± 30 kV
J
- 40 to + 125 °C
- 55 to + 150 °C
3.5 A
3.5 A
248 W
252 W
± 30 kV
± 30 kV
J
- 40 to + 125 °C
- 55 to + 150 °C
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Document Number 85824
Rev. 1.7, 21-Apr-08
Page 5
GSOT03C to GSOT36C
Vishay Semiconductors
BiAs-Mode (2-line Bidirectional Asymmetrical protection mode)
With the GSOTxxC two signal- or data-lines (L1, L2) can be protected against voltage transients. With pin 3
connected to ground and pin 1 and pin 2 connected to a signal- or data-line which has to be protected. As long
as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum
Reverse Working Voltage (V
offer a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxxC clamping behaviour is
Bi
directional and Asymmetrical (BiAs).
L1
L2
) the protection diode between pin 2 and pin 3 and between pin 1 and pin 3
RWM
) is defined by the BReakthrough Voltage (VBR) level
C
) clamps the negative transient close to
F
2 1
3
If a higher surge current or Peak Pulse current (I
) is needed, both protection diodes in the GSOTxxC can
PP
also be used in parallel in order to "double" the performance.
This offers: • double surge power = double peak pulse current (2 x I
• halve line inductance = reduced clamping voltage
• halve line resistance = reduced clamping voltage
• double Diode Capacitance (2 x C
• double Reverse leakage current (2 x I
L1
2 1
3
)
D
)
R
20359
PPM
20358
)
Document Number 85824
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
5
Page 6
GSOT03C to GSOT36C
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
GSOT03C
BiAs mode (between Pin 1 to 3 or pin 2 to 3)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 100 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at I
R
at V
= 3.3 V I
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
at V
= 1.6 V; f = 1 MHz C
R
= 30 A V
PPM
= 1 A V
PP
= I
= 30 A V
PPM
GSOT04C
BiAs mode (between Pin 1 to 3 or pin 2 to 3)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 20 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at I
R
= 4 V I
at V
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
at V
= 2 V; f = 1 MHz C
R
= 30 A V
PPM
= 1 A V
PP
= I
= 30 A V
PPM
N
N
lines
RWM
R
BR
C
C
F
F
D
D
lines
RWM
R
BR
C
C
F
F
D
D
2 lines
3.3 V
100 µA
44.6 V
5.7 7.5 V
10 12.3 V
11.2V
4.5 V
420 600 pF
260 pF
2 lines
4V
20 µA
56.1 V
7.5 9 V
11.2 14.3 V
11.2V
4.5 V
310 450 pF
200 pF
GSOT05C
BiAs mode (between Pin 1 to 3 or pin 2 to 3)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 10 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
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at I
R
at V
= 5 V I
R
= 1 mA V
at I
R
at I
= 1 A V
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
= 2.5 V; f = 1 MHz C
at V
R
= 30 A V
PPM
= 1 A V
PP
= I
= 30 A V
PPM
N
lines
RWM
R
BR
C
C
F
F
D
D
2 lines
5V
10 µA
66.8 V
78.7V
12 16 V
11.2V
4.5 V
260 350 pF
150 pF
Document Number 85824
Rev. 1.7, 21-Apr-08
Page 7
GSOT08C
BiAs mode (between Pin 1 to 3 or pin 2 to 3)
Parameter Test conditions/remarks Symbol Min. Typ . Max. Unit
Protection paths Number of lines which can be protected
= 5 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at I
R
= 8 V I
at V
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at I
at I
PP
at V
= 0 V; f = 1 MHz C
R
= 4 V; f = 1 MHz C
at V
R
= 18 A V
PPM
= 1 A V
PP
= I
= 18 A V
PPM
GSOT12C
BiAs mode (between pin 1 to 3 or pin 2 to 3)
Parameter Test conditions/remarks Symbol Min. Typ . Max. Unit
Protection paths Number of lines which can be protected
= 1 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at I
R
= 12 V I
at V
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
at V
= 6 V; f = 1 MHz C
R
= 12 A V
PPM
= 1 A V
PP
= I
= 12 A V
PPM
GSOT03C to GSOT36C
Vishay Semiconductors
N
N
lines
RWM
R
BR
C
C
F
F
D
D
lines
RWM
R
BR
C
C
F
F
D
D
8V
910 V
10.7 13 V
15.2 19.2 V
11.2V
3V
160 250 pF
80 pF
12 V
13.5 15 V
15.4 18.7 V
21.2 26 V
11.2V
2.2 V
115 150 pF
50 pF
2 lines
5µA
2 lines
1µA
GSOT15C
BiAs mode (between pin 1 to 3 or pin 2 to 3)
Parameter Test conditions/remarks Symbol Min. Typ . Max. Unit
Protection paths Number of lines which can be protected
at I
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
Document Number 85824
Rev. 1.7, 21-Apr-08
at V
at V
For technical support, please contact: ESD-Protection@vishay.com
= 1 µA V
R
= 15 V I
at V
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
R
= 7.5 V; f = 1 MHz C
R
= 8 A V
PPM
= 1 A V
PP
= I
= 8 A V
PPM
N
lines
RWM
R
BR
C
C
F
F
D
D
2 lines
15 V
1µA
16.5 18 V
19.4 23.5 V
24.8 28.8 V
11.2V
1.8 V
90 120 pF
35 pF
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Page 8
GSOT03C to GSOT36C
Vishay Semiconductors
GSOT24C
BiAs mode (between pin 1 to 3 or pin 2 to 3)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 1 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
GSOT36C
BiAs mode (between pin 1 to 3 or pin 2 to 3)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at I
R
at V
= 24 V I
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
at V
= 12 V; f = 1 MHz C
R
at I
at V
at I
at I
at I
PP
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
= 18 V; f = 1 MHz C
at V
R
= 5 A V
PPM
= 1 A V
PP
= I
= 5 A V
PPM
= 1 µA V
R
= 36 V I
R
= 1 mA V
R
= 1 A V
PP
= I
= 3.5 A V
PPM
= 1 A V
PP
= I
= 3.5 A V
PPM
N
N
lines
RWM
R
BR
C
C
F
F
D
D
lines
RWM
R
BR
C
C
F
F
D
D
2 lines
24 V
1µA
27 30 V
34 41 V
41 47 V
11.2V
1.4 V
65 80 pF
20 pF
2 lines
36 V
1µA
39 43 V
49 60 V
59 71 V
11.2V
1.3 V
52 65 pF
12 pF
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Document Number 85824
Rev. 1.7, 21-Apr-08
Page 9
GSOT03C to GSOT36C
Vishay Semiconductors
BiSy-mode (1-line Bidirectional Symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC can also be used as a single line protection
device. Therefore pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground (or vice versa).
pin 3 must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the
GSOTxxC passes one diode in forward direction and the other one in reverse direction. The Clamping Voltage
(V
) is defined by the BReakthrough Voltage (VBR) level of one diode plus the forward voltage of the other
C
diode plus the voltage drop at the series impedances (resistances and inductances) of the protection device.
Due to the same clamping levels in positive and negative direction the GSOTxxC voltage clamping behaviour
directional and Symmetrical (BiSy).
is Bi
L1
3
2 1
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
GSOT03C
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Parameter Test conditions/remarks Symbol Min. Typ . Max. Unit
Protection paths Number of lines which can be protected
= 100 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Clamping voltage
Capacitance
at I
R
at V
= 3.8 V I
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at V
= 0 V; f = 1 MHz C
R
= 1.6 V; f = 1 MHz C
at V
R
= 30 A V
PPM
N
lines
RWM
R
BR
C
C
D
D
GSOT04C
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Parameter Test conditions/remarks Symbol Min. Typ . Max. Unit
Protection paths Number of lines which can be protected
= 20 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Clamping voltage
Capacitance
at I
R
= 4.5 V I
at V
R
= 1 mA V
at I
R
= 1 A V
at I
PP
at I
= I
PP
= 0 V; f = 1 MHz C
at V
R
at V
= 2 V; f = 1 MHz C
R
= 30 A V
PPM
N
lines
RWM
R
BR
C
C
D
D
20361
1 lines
3.8 V
100 µA
4.5 5.3 V
78.4V
14 16.8 V
210 300 pF
190 pF
1 lines
4.5 V
20 µA
5.5 6.8 V
7.5 9 V
15.7 18.8 V
155 225 pF
135 pF
Document Number 85824
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
9
Page 10
GSOT03C to GSOT36C
Vishay Semiconductors
GSOT05C
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 10 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Clamping voltage
Capacitance
GSOT08C
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
Reverse stand off voltage
Reverse current
Reverse break down voltage
Clamping voltage
Capacitance
at I
R
at V
= 5.5 V I
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
= 0 V; f = 1 MHz C
at V
R
= 2.5 V; f = 1 MHz C
at V
R
at I
at V
at I
at I
at I
PP
= 0 V; f = 1 MHz C
at V
R
= 4 V; f = 1 MHz C
at V
R
= 30 A V
PPM
= 5 µA V
R
= 8.5 V I
R
= 1 mA V
R
= 1 A V
PP
= I
= 18 A V
PPM
N
N
lines
RWM
R
BR
C
C
D
D
lines
RWM
R
BR
C
C
D
D
1 lines
5.5 V
10 µA
6.5 7.5 V
8.1 9.7 V
17 20.4 V
130 175 pF
100 pF
1 lines
8.5 V
5µA
9.5 10.7 V
11.7 14 V
18.5 22.2 V
80 125 pF
60 pF
GSOT12C
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 1 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Clamping voltage
Capacitance
at I
R
= 12.5 V I
at V
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
at V
= 0 V; f = 1 MHz C
R
= 6 V; f = 1 MHz C
at V
R
= 12 A V
PPM
GSOT15C
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
= 1 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Clamping voltage
Capacitance
at I
R
= 15.5 V I
at V
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
= 0 V; f = 1 MHz C
at V
R
= 7.5 V; f = 1 MHz C
at V
R
= 8 A V
PPM
N
N
lines
RWM
R
BR
C
C
D
D
lines
RWM
R
BR
C
C
D
D
1 lines
12.5 V
1µA
13.5 15.7 V
16.4 19.7 V
23.4 28.1 V
58 75 pF
36 pF
1 lines
15.5 V
1µA
17 18.7 V
20.4 24.5 V
26.6 30.6 V
45 60 pF
25 pF
www.vishay.com
10
For technical support, please contact: ESD-Protection@vishay.com
Document Number 85824
Rev. 1.7, 21-Apr-08
Page 11
GSOT24C
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Parameter Test conditions/remarks Symbol Min. Typ . Max. Unit
Protection paths Number of lines which can be protected
= 1 µA V
Reverse stand off voltage
Reverse current
Reverse break down voltage
Clamping voltage
Capacitance
at I
R
at V
= 24.5 V I
R
= 1 mA V
at I
R
= 1 A V
at I
PP
= I
at I
PP
= 0 V; f = 1 MHz C
at V
R
= 12 V; f = 1 MHz C
at V
R
= 5 A V
PPM
GSOT36C
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Parameter Test conditions/remarks Symbol Min. Typ . Max. Unit
Protection paths Number of lines which can be protected
at I
Reverse stand off voltage
Reverse current
Reverse break down voltage
Clamping voltage
Capacitance
at I
at V
at V
= 1 µA V
R
= 36.5 V I
at V
R
at I
= 1 mA V
R
= 1 A V
at I
PP
= I
PP
R
= 18 V; f = 1 MHz C
R
= 3.5 A V
PPM
= 0 V; f = 1 MHz C
GSOT03C to GSOT36C
Vishay Semiconductors
N
N
lines
RWM
R
BR
C
C
D
D
lines
RWM
R
BR
C
C
D
D
24.5 V
27.5 30.7 V
34 41 V
40 48 V
33 40 pF
18 pF
36.5 V
39.5 43.7 V
50 60 V
60 72 V
26 33 pF
10 pF
1 lines
1µA
1 lines
1µA
Package Dimensions in millimeters (inches): SOT23
17418
Document Number 85824
Rev. 1.7, 21-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
11
Page 12
GSOT03C to GSOT36C
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
12
For technical support, please contact: ESD-Protection@vishay.com
Document Number 85824
Rev. 1.7, 21-Apr-08
Page 13
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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