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GSD32015
RECTIFIER DIODE
VOLTAGE UP TO 1600 V
AVERAGE CURRENT 150 A
SURGE CURRENT 2.85 kA
Cathode on base (Standard) - Anode on base (Reverse)
BLOCKING CHARACTERISTICS
Characteristic Conditions
VRRM
Repetitive peak reverse voltage 1600 V
VRSM
Non-repetitive peak reverse voltage 1700 V
IRRM
Repetitive peak reverse current, max.
VRRM, single phase, half wave, Tj = Tjmax
10 mA
FORWARD CHARACTERISTICS
IF(AV)
Average forward current Sine wave,180° conduction, Tc = 120°C 150 A
IF(RMS)
R.M.S. forward current Sine wave,180° conduction, Tc = 120°C 236 A
IFSM
Surge forward current
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
2.85 kA
I²t I² t for fusing coordination 34.0 kA²s
VF(TO)
Threshold voltage
Tj = Tjmax
0.9 V
rF
Forward slope resistance
Tj = Tjmax
0.65
mΩ
VFM
Peak forward voltage, max
Forward current IF =
300 A, Tj = Tjmax 1.10 V
SWITCHING CHARACTERISTICS
Qrr
Rverse recovery charge
Tj = Tjmax, IF = A, tp = µs, di/dt = A/µs
µC
Irr
Reverse recovery current
VR = V, dV/dt = V/µs
A
trr
Reverse recovery time µs
VFP
Forward recovery voltage
Tj = Tjmax, di/dt = A/µs
V
THERMAL AND MECHANICAL CHARACTERISTICS
Rth(j-c)
Thermal resistance (junction to case) Double side cooled 0.35 °C/W
Rth(c-h)
Thermal resistance (case to heatsink) Double side cooled 0.08 °C/W
Tjmax
Max operating junction temperature 180 °C
Tstg
Storage temperature -65 / 180 °C
M Mounting torque 10 N·m
Mass 100 g
Document GSD32015T001
Value
G
F
H
A
BC
D
E
M
ØL
N
Symbol
Inches
mm
A B C D E F G H L
4.07
10.33 36.22
1.426 .64 .745
18.9216.25
.233 .437
11.095.66
1.06 1.166
29.6126.92
.85
21.59
3/8-24 UNFM1/4-28 UNF
N
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
Phone: +39-010-667 8800
Fax: +39-010-667 8812
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
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