Datasheet GS832218B-250, GS832218B-225, GS832218B-200, GS832218B-166, GS832218B-150 Datasheet (GSI TECHNOLOGY)

查询GS832218B-133供应商

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

119-, 165-, & 209-Pin BGA

2M x 18, 1M x 36, 512K x 72

Commercial Temp
Industrial Temp

36Mb S/DCD Sync Burst SRAMs

Features

• FT pin for user-configurable flow through or pipeline operation

• Single/Dual Cycle Deselect selectable

• IEEE 1149.1 JTAG-compatible Boundary Scan

• ZQ mode pin for user-selectable high

/low output drive

• 2.5 V +10%/–10% core power supply

• 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply
pin for Linear or Interleaved Burst mode

• LBO

• Internal input resistors on mode pins allow floating mode pins

• Default to SCD x18/x36 Interleaved Pipeline mode

• Byte Write (BW

) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 119-, 165-, and 209-bump BGA package

Functional Description

Applications

The GS832218/36/72 is a 37,748,736-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.

Controls

Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP

) are synchronous and are controlled by a positive-edge-

GW
triggered clock input (CK). Output enable (G
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP
burst addresses are generated internally and are controlled by

. The burst address counter may be configured to count in

ADV
either linear or interleave order with the Linear Burst Order (LBO
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.

, ADSC, ADV), and write control inputs (Bx, BW,

) and power down

or ADSC inputs. In Burst mode, subsequent

250 MHz–133 MHz

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
Data Output Register. Holding FT
Pipeline mode, activating the rising-edge-triggered Data Output
Register.

SCD and DCD Pipelined Reads

The GS832218/36/72 is a SCD (Single Cycle Deselect) and DCD
(Dual Cycle Deselect) pipelined synchronous SRAM. DCD
SRAMs pipeline disable commands to the same degree as read
commands. SCD SRAMs pipeline deselect commands one stage
less than read commands. SCD RAMs begin turning off their
outputs immediately after the deselect command has been
captured in the input registers. DCD RAMs hold the deselect
command for one full cycle and then begin turning off their
outputs just after the second rising edge of clock. The user may
configure this SRAM for either mode of operation using the SCD
mode input.

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

) input combined with one or more individual byte write

(BW
signals (Bx

). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.

FLXDrive™

The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.

Core and Interface Voltages

The GS832218/36/72 operates on a 2.5 V or 3.3 V power supply.

)

All input are 3.3 V and 2.5 V compatible. Separate output power

) pins are used to decouple output noise from the internal

(V

DDQ

circuits and are 3.3 V and 2.5 V compatible.

high places the RAM in

DD

Parameter Synopsis

-250 -225 -200 -166 -150 -133 Unit

ns

4.0

3.8

3.5

3.0

2.5

3.0

4.0

285
350
440

6.5

6.5

205
235
315

2.7

3.0

4.4

265
320
410

7.0

7.0

195
225
295

3.0

5.0

245
295
370

7.5

7.5

185
210
265

3.5

6.0

220
260
320

8.0

8.0

175
200
255

3.8

6.7

210
240
300

8.5

8.5

165
190
240

4.0

7.5

185
215
265

8.5

8.5nsns

155
175
230

ns
ns

mA
mA
mA

mA
mA
mA

Pipeline

3-1-1-1

Flow

Through

2-1-1-1

t

(x18/x36)

KQ

t

(x72)

KQ

tCycle

Curr (x18)
Curr (x36)
Curr (x72)

t

KQ

tCycle

Curr (x18)
Curr (x36)
Curr (x72)

Rev: 1.06 9/2004 1/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

209-Bump BGA—x72 Common I/O—Top View (Package C)

1234567891011

ADQ

BDQ

CDQ

DDQ

E DQP

FDQ

GDQ

HDQ

JDQ

G DQG AE2ADSPADSC ADV E3 ADQB DQB A

G DQG BC BG NC BW ABBBF DQB DQB B

G DQG BH BD NC E1 NC BE BA DQB DQB C

V

V

V

V

DDQ

V

DDQ

V

DDQ

SS

SS

SS

NC NC G GW NC

V

DDQ

V

SS

V

DDQ

V

SS

V

DDQ

G DQG

G DQPC

C DQC

C DQC

C DQC

C DQC

KNCNCCKNC

LDQ

MDQ

NDQ

PDQ

H DQH

H DQH

H DQH

H DQH

V

V

DDQ

V

DDQ

V

SS

SS

V

V

DDQ

V

DDQ

V

SS

SS

V

SS

V

DD

V

SS

V

DD

V

SS

V

DD

V

SS

V

DD

V

SS

V

DD

V

SS

V

DD

ZQ

MCH

MCL

MCL

MCL

FT

MCL

SCD

ZZ

V

DD

V

SS

V

DD

V

SS

V

DD

V

SS

V

DD

V

SS

V

DD

V

SS

V

V

V

DDQ

V

DDQ

V

DDQ

SS

SS

V

V

V

DDQ

V

DDQ

V

DDQ

SS

SS

NC NC NC NC K

V

V

DDQ

V

DDQ

V

SS

SS

V

V

DDQ

V

DDQ

V

SS

SS

DQB DQB D

DQPF DQPB E

DQF DQF F

DQF DQF G

DQF DQF H

DQF DQF J

DQA DQA L

DQA DQA M

DQA DQA N

DQA DQA P

R DQP

TDQ

UDQ

VDQ

WDQ

D DQPH

D DQD

D DQD NCAAAAAADQE DQE U

D DQD AAAA1AAADQE DQE V

D DQD TMS TDI A A0 A TDO TCK DQE DQE W

V

DDQ

V

SS

V

DDQ

NC NC LBO NC NC

11 x 19 Bump BGA—14 x 22 mm

V

DD

V

DD

V

DD

2

Body—1 mm Bump Pitch

V

DDQ

V

DDQ

V

SS

DQPA DQPE R

DQE DQE T

Rev: 1.06 9/2004 2/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

GS832272 209-Bump BGA Pin Description

Symbol Type Description

A0, A1 I Address field LSBs and Address Counter Preset Inputs.

An I Address Inputs

DQ

A

DQB
DQC
DQD
DQE
DQF
DQG
DQH

A, BB

B

B

C,BD

B

E, BF, BG,BH

NC — No Connect

CK I Clock Input Signal; active high

GW

E

1

E

3

E

2

G

ADV

ADSP

, ADSC

ZZ

FT

LBO

SCD

MCH

MCL

BW

ZQ

TMS

TDI

TDO

TCK

I/O Data Input and Output pins

I Byte Write Enable for DQA, DQB I/Os; active low

I Byte Write Enable for DQC, DQD I/Os; active low

I Byte Write Enable for DQE, DQF, DQG, DQH I/Os; active low

I Global Write Enable—Writes all bytes; active low

I Chip Enable; active low

I Chip Enable; active low

I Chip Enable; active high

I Output Enable; active low

I Burst address counter advance enable; active low

I Address Strobe (Processor, Cache Controller); active low

I Sleep Mode control; active high

I Flow Through or Pipeline mode; active low

I Linear Burst Order mode; active low

I Single Cycle Deselect/Dual Cycle Deselect Mode Control

I Must Connect High

Must Connect Low

I Byte Enable; active low

I

(Low = Low Impedance [High Drive], High = High Impedance [Low Drive])

FLXDrive Output Impedance Control

I Scan Test Mode Select

I Scan Test Data In

O Scan Test Data Out

I Scan Test Clock

Preliminary

Rev: 1.06 9/2004 3/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

GS832272 209-Bump BGA Pin Description (Continued)

Symbol Type Description

Preliminary

V

V

V

DDQ

DD

SS

I Core power supply

I I/O and Core Ground

I Output driver power supply

Rev: 1.06 9/2004 4/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

165-Bump BGA—x18 Commom I/O—Top View (Package E)

1234567891011

ANC

BNC

CNCNC

DNC

ENC

FNC

GNC

HFT

J

K

L

DQB NC V

DQB NC V

DQB NC V

AE1BB NC E3 BW ADSC ADV A AA

AE2NCBACK GW G ADSP ANC B

V

DQB V

DQB V

DQB V

DQB V

MCL NC V

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

DDQ

V

SS

V

DD

V

DD

V

DD

V

DD

DD

V

DD

V

DD

V

DD

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

V

V

V

V

V

V

V

V

SS

DD

DD

DD

DD

DD

DD

DD

DD

V

V

V

V

V

DDQ

DDQ

DDQ

DDQ

DDQ

NC DQPA C

NC DQA D

NC DQA E

NC DQA F

NC DQA G

NC ZQ ZZ H

V

V

V

DDQ

DDQ

DDQ

DQA NC J

DQA NC K

DQA NC L

M

N

DQB NC V

DQPB SCD V

PNCNC

RLBO

A A ATMSA0 TCK A A A AR

11 x 15 Bump BGA—15 mm x 17 mm Body—1.0 mm Bump Pitch

DDQ

DDQ

V

DD

V

SS

V

SS

V

SS

V

SS

NC ANCV

V

DD

SS

V

V

DDQ

DDQ

DQA NC M

NC NC N

A ATDIA1 TDO A A A AP

Rev: 1.06 9/2004 5/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

165-Bump BGA—x36 Common I/O—Top View (Package E)

1234567891011

ANC

BNC

C

D

E

F

G

DQPC NC V

DQC DQC V

DQC DQC V

DQC DQC V

DQC DQC V

HFT

J

K

L

DQD DQD V

DQD DQD V

DQD DQD V

AE1BC BB E3 BW ADSC ADV ANC A

AE2BDBA CK GW G ADSP ANC B

DDQ

DDQ

DDQ

DDQ

DDQ

MCL NC V

DDQ

DDQ

DDQ

V

SS

V

DD

V

DD

V

DD

V

DD

DD

V

DD

V

DD

V

DD

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

SS

V

V

V

V

V

V

V

V

V

SS

DD

DD

DD

DD

DD

DD

DD

DD

V

V

V

V

V

DDQ

DDQ

DDQ

DDQ

DDQ

NC DQPB C

DQB DQB D

DQB DQB E

DQB DQB F

DQB DQB G

NC ZQ ZZ H

V

V

V

DDQ

DDQ

DDQ

DQA DQA J

DQA DQA K

DQA DQA L

M

N

DQD DQD V

DQPD SCD V

PNCNC

RLBO

A A ATMSA0 TCK A A A AR

11 x 15 Bump BGA—15 mm x 17 mm Body—1.0 mm Bump Pitch

DDQ

DDQ

V

DD

V

SS

V

SS

V

SS

V

SS

NC ANCV

V

DD

SS

V

V

DDQ

DDQ

DQA DQA M

NC DQPA N

A ATDIA1 TDO A A A AP

Rev: 1.06 9/2004 6/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

GS832218/36 165-Bump BGA Pin Description

Symbol Type Description

A0, A1 I Address field LSBs and Address Counter Preset Inputs

An I Address Inputs

DQ

A

DQB
DQC
DQD

A, BB, BC, BD I Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low (x36 Version)

B

NC — No Connect

CK I Clock Input Signal; active high

BW

GW

E

1 I Chip Enable; active low

E

3 I Chip Enable; active low

E

2 I Chip Enable; active high

G

ADV

ADSC

, ADSP I Address Strobe (Processor, Cache Controller); active low

ZZ I Sleep mode control; active high

FT

LBO

ZQ I

TMS

TDI

TDO

TCK

MCL

SCD

V

DD

V

SS

V

DDQ

I/O Data Input and Output pins

I Byte Write—Writes all enabled bytes; active low

I Global Write Enable—Writes all bytes; active low

I Output Enable; active low

I Burst address counter advance enable; active l0w

I Flow Through or Pipeline mode; active low

I Linear Burst Order mode; active low

FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low

Drive])

I Scan Test Mode Select

I Scan Test Data In

O Scan Test Data Out

I Scan Test Clock

— Must Connect Low

— Single Cycle Deselect/Dual Cyle Deselect Mode Control

I Core power supply

I I/O and Core Ground

I Output driver power supply

Preliminary

Rev: 1.06 9/2004 7/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

119-Bump BGA—x36 Common I/O—Top View

1234567

Preliminary

A

V

DDQ

A A ADSP AA

BNCA AADSC

CNCA A

DDQ

EDQ

F

GDQ

C DQPC

C DQC

V

DDQ

C2 DQC BC ADV BB DQB DQB G

DQC

HDQC DQC

J

KDQ

LDQ

M

V

DDQ

D DQD

D DQD BD SCD BA DQA DQA L

V

DDQ

V

DD

DQD

V

V

V

V

NC

V

V

SS

SS

SS

SS

SS

SS

V

DD

ZQ

E1

G

GW

V

DD

CK

BW

V

V

V

V

NC

V

V

V

DDQ

A

AANCB

AANCC

SS

SS

SS

SS

SS

SS

DQPB DQB D

DQB DQB E

DQB

V

DDQ

DQB DQB H

V

DD

V

DDQ

DQA DQA K

DQA

V

DDQ

F

J

M

NDQ

PDQ

D DQD

D DQPD

V

SS

V

SS

RNCALBO

V

A1

A0

DD

V

SS

V

SS

DQA DQA N

DQPA DQA P

FT ANCR

TNCNCAAAAZZT

U

V

DDQ

TMS TDI TCK TDO NC

7 x 17 Bump BGA—14 x 22 mm

2

Body—1.27 mm Bump Pitch

V

DDQ

U

Rev: 1.06 9/2004 8/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

119-Bump BGA—x18 Common I/O—Top View

1234567

Preliminary

A

V

DDQ

A A ADSP AA

BNCA AADSC

CNCA A

DDQ

ENCDQ

F

GNCDQ

B NC

V

DDQ

B

NC

B BB ADV NC NC DQA G

HDQB NC

J

V

DDQ

KNCDQ

LDQ

M

B NC NC SCD BA DQA NC L

V

DDQ

V

DD

DQB

B

V

V

V

V

NC

V

V

SS

SS

SS

SS

SS

SS

V

DD

ZQ

E1

G

GW

V

DD

CK

BW

V

V

V

V

NC

V

V

V

DDQ

A

AANCB

AANCC

SS

SS

SS

SS

SS

SS

DQPA NC D

NC DQA E

DQA

V

DDQ

DQA NC H

V

DD

V

DDQ

NC DQA K

NC

V

DDQ

F

J

M

NDQ

B NC

PNCDQP

V

SS

V

B

SS

RNCALBO

V

A1

A0

DD

V

SS

V

SS

DQA NC N

NC DQA P

FT ANCR

TNCAAAAAZZT

U

V

DDQ

TMS TDI TCK TDO NC

7 x 17 Bump BGA—14 x 22 mm

2

Body—1.27 mm Bump Pitch

V

DDQ

U

Rev: 1.06 9/2004 9/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

GS832218/36 119-Bump BGA Pin Description

Symbol Type Description

A0, A1 I Address field LSBs and Address Counter Preset Inputs

An I Address Inputs

DQ

A

DQB
DQC
DQD

B

A, BB, BC, BD I Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low

NC — No Connect

CK I Clock Input Signal; active high

BW

GW

E

1 I Chip Enable; active low

G

ADV

ADSP

, ADSC I Address Strobe (Processor, Cache Controller); active low

ZZ I Sleep mode control; active high

FT

LBO

ZQ I

SCD I Single Cycle Deselect/Dual Cyle Deselect Mode Control

TMS

TDI

TDO

TCK

V

DD

V

SS

V

SS

V

DDQ

I/O Data Input and Output pins

I Byte Write—Writes all enabled bytes; active low

I Global Write Enable—Writes all bytes; active low

I Output Enable; active low

I Burst address counter advance enable; active low

I Flow Through or Pipeline mode; active low

I Linear Burst Order mode; active low

FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low

Drive])

I Scan Test Mode Select

I Scan Test Data In

O Scan Test Data Out

I Scan Test Clock

I Core power supply

I I/O and Core Ground

I I/O and Core Ground

I Output driver power supply

Preliminary

Rev: 1.06 9/2004 10/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

GS832218/36 Block Diagram

Preliminary

A0–An

LBO

ADV

CK

ADSC
ADSP

GW
BW

BA

BB

BC

BD

Register

DQ

A0

A1

D0

D1

Counter

Load

Register

DQ

Register

DQ

Register

DQ

Register

DQ

Q0

Q1

A0

A1

A

Memory

Array

QD

36

4

DQ

Register

36

Register

DQ

E1

FT

G

ZZ

Note: Only x36 version shown for simplicity.

Power Down

Control

Register

DQ

Register

DQ

Register

DQ

SCD

36

36

36

36

DQx1–DQx9

Rev: 1.06 9/2004 11/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Mode Pin Functions

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Mode Name

Burst Order Control LBO

Output Register Control FT

Power Down Control ZZ

Single/Dual Cycle Deselect Control SCD

FLXDrive Output Impedance Control ZQ

Note:

There are pull-up devices on the ZQ, SCD, and FT
chip will operate in the default states as specified in the above tables.

Burst Counter Sequences

Pin

Name

State Function

L Linear Burst

H Interleaved Burst

L Flow Through

H or NC Pipeline

L or NC Active

H

L Dual Cycle Deselect

H or NC Single Cycle Deselect

L High Drive (Low Impedance)

H or NC Low Drive (High Impedance)

pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the

Linear Burst Sequence

Standby, I

DD

= I

SB

Interleaved Burst Sequence

A[1:0] A[1:0] A[1:0] A[1:0]

1st address 00 01 10 11

2nd address 01 10 11 00

3rd address 10 11 00 01

4th address 11 00 01 10

Note:

The burst counter wraps to initial state on the 5th clock.

A[1:0] A[1:0] A[1:0] A[1:0]

1st address 00 01 10 11

2nd address 01 00 11 10

3rd address 10 11 00 01

4th address 11 10 01 00

Note:

The burst counter wraps to initial state on the 5th clock.

BPR 1999.05.18

Rev: 1.06 9/2004 12/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Byte Write Truth Table

Function GW BW BA BB BC BD Notes

Read H H X X X X 1

Read HL HHHH1

Write byte a H L L H H H 2, 3

Write byte b H L H L H H 2, 3

Write byte c H L H H L H 2, 3, 4

Write byte d H L H H H L 2, 3, 4

Write all bytesHLLLLL2, 3, 4

Write all bytesLXXXXX

Notes:

1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.

2. Byte Write Enable inputs B

3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.

4. Bytes “

C” and “D” are only available on the x36 version.

A, BB, BC, and/or BD may be used in any combination with BW to write single or multiple bytes.

Rev: 1.06 9/2004 13/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Synchronous Truth Table

State

Operation Address Used

Deselect Cycle, Power Down None X H X L X X High-Z

Read Cycle, Begin Burst External R L L X X X Q

Read Cycle, Begin Burst External R L H L X F Q

Write Cycle, Begin Burst External W L H L X T D

Read Cycle, Continue Burst Next CR X H H L F Q

Read Cycle, Continue Burst Next CR H X H L F Q

Write Cycle, Continue Burst Next CW X H H L T D

Write Cycle, Continue Burst Next CW H X H L T D

Diagram

5

Key

E1 ADSP ADSC ADV

W

3

DQ

4

Read Cycle, Suspend Burst Current X H H H F Q

Read Cycle, Suspend Burst Current H X H H F Q

Write Cycle, Suspend Burst Current X H H H T D

Write Cycle, Suspend Burst Current H X H H T D

Notes:

1. X = Don’t Care, H = High, L = Low

2. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding

3. G

is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown

as “Q” in the Truth Table above).

4. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish
basic synchronous or synchronous burst operations and may be avoided for simplicity.

5. Tying ADSP

6. Tying ADSP

high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.
high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.

Rev: 1.06 9/2004 14/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Simplified State Diagram

X

Deselect

WR

Preliminary

Simple Synchronous OperationSimple Burst Synchronous Operation

W

X

First Write

WR

Burst Write

CW CR

R

CR

R

CR

R

First Read

Burst Read

X

CRCW

XX

Notes:

1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G

2. The upper portion of the diagram assumes active use of only the Enable (E1
that ADSP

3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC
assumes ADSP

Rev: 1.06 9/2004 15/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

is tied high and ADSC is tied low.

is tied high and ADV is tied low.

) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and

is tied low.

control inputs and

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Simplified State Diagram with G

X

Deselect

WR

Preliminary

W

X

First Write

W

X

Burst Write

CW CR

R

CR

R

CR

W

CW

W

CW

R

First Read

R

Burst Read

X

CRCW

X

Notes:

1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G

2. Use of “Dummy Reads” (Read Cycles with G
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.

3. Transitions shown in grey tone assume G
Data Input Set Up Time.

Rev: 1.06 9/2004 16/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

High) may be used to make the transition from read cycles to write cycles without passing

has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet

.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Absolute Maximum Ratings

(All voltages reference to VSS)

Symbol Description Value Unit

V

DD

V

DDQ

V

I/O

V

IN

I

IN

I

OUT

P

D

T

STG

T

BIAS

Note:

Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.

Voltage on VDD Pins

Voltage in V

DDQ

Pins

Voltage on I/O Pins

Voltage on Other Input Pins

–0.5 to V

–0.5 to V

–0.5 to 4.6 V

–0.5 to 4.6 V

+0.5 (≤ 4.6 V max.)

DDQ

+0.5 (≤ 4.6 V max.)

DD

V

V

Input Current on Any Pin +/–20 mA

Output Current on Any I/O Pin +/–20 mA

Package Power Dissipation 1.5 W

Storage Temperature –55 to 125

Temperature Under Bias –55 to 125

o

o

C

C

Power Supply Voltage Ranges

Parameter Symbol Min. Typ. Max. Unit Notes

3.3 V Supply Voltage

2.5 V Supply Voltage

3.3 V V

2.5 V V

I/O Supply Voltage V

DDQ

I/O Supply Voltage V

DDQ

Notes:

1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica­tions quoted are evaluated for worst case in the temperature range marked on the device.

2. Input Under/overshoot voltage must be –2 V > Vi < V

V

DD3

V

DD2

DDQ3

DDQ2

+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.

DDn

3.0 3.3 3.6 V

2.3 2.5 2.7 V

3.0 3.3 3.6 V

2.3 2.5 2.7 V

Rev: 1.06 9/2004 17/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

V

Range Logic Levels

DDQ3

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Parameter Symbol Min. Typ. Max. Unit Notes

VDD Input High Voltage V

Input Low Voltage V

V

DD

I/O Input High Voltage V

V

DDQ

I/O Input Low Voltage V

V

DDQ

IH

IL

IHQ

ILQ

2.0 —

–0.3 — 0.8 V 1

2.0 —

–0.3 — 0.8 V 1,3

V

V

DD

DDQ

+ 0.3

+ 0.3

V1

V1,3

Notes:

1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica­tions quoted are evaluated for worst case in the temperature range marked on the device.

2. Input Under/overshoot voltage must be –2 V > Vi < V

3. V

(max) is voltage on V

IHQ

pins plus 0.3 V.

DDQ

+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.

DDn

V

Range Logic Levels

DDQ2

Parameter Symbol Min. Typ. Max. Unit Notes

VDD Input High Voltage V

Input Low Voltage V

V

DD

V

I/O Input High Voltage V

DDQ

I/O Input Low Voltage V

V

DDQ

IH

IL

IHQ

ILQ

0.6*V

DD

–0.3 —

0.6*V

DD

–0.3 —

—

—

Notes:

1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica­tions quoted are evaluated for worst case in the temperature range marked on the device.

2. Input Under/overshoot voltage must be –2 V > Vi < V

3. V

(max) is voltage on V

IHQ

pins plus 0.3 V.

DDQ

+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.

DDn

V

0.3*V

V

DDQ

0.3*V

DD

+ 0.3

DD

+ 0.3

DD

V1

V1

V1,3

V1,3

Recommended Operating Temperatures

Parameter Symbol Min. Typ. Max. Unit Notes

Ambient Temperature (Commercial Range Versions)

Ambient Temperature (Industrial Range Versions)

Notes:

1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica­tions quoted are evaluated for worst case in the temperature range marked on the device.

2. Input Under/overshoot voltage must be –2 V > Vi < V

Rev: 1.06 9/2004 18/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

T

A

T

A

+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.

DDn

02570°C2

–40 25 85 °C2

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Undershoot Measurement and Timing Overshoot Measurement and Timing

V

IH

V

+ 2.0 V

DD

V

SS

50%

20% tKC

Preliminary

50%

– 2.0 V

SS

20% tKC

Capacitance

(TA = 25oC, f = 1 MHZ, V

DD

= 2.5 V)

Parameter Symbol Test conditions Typ. Max. Unit

Input Capacitance

Input/Output Capacitance

Note:

These parameters are sample tested.

C

IN

C

I/O

AC Test Conditions

Parameter Conditions

V

Input high level

Input low level 0.2 V

Input slew rate 1 V/ns

Input reference level

Output reference level

Output load Fig. 1

Notes:

1. Include scope and jig capacitance.

2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.

3. Device is deselected as defined by the Truth Table.

DQ

– 0.2 V

DD

V

/2

DDQ

V

/2

DDQ

Output Load 1

V

V

OUT

IN

= 0 V

= 0 V

V

DD

V

IL

45pF

67pF

30pF

*

V

50Ω

DDQ/2

* Distributed Test Jig Capacitance

Rev: 1.06 9/2004 19/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

DC Electrical Characteristics

Parameter Symbol Test Conditions Min Max

Input Leakage Current

(except mode pins)

ZZ Input Current

FT

, SCD, ZQ Input Current

Output Leakage Current (x36/x72)

Output Leakage Current (x18)

Output High Voltage

Output High Voltage

Output Low Voltage

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

I

IL

I

IN1

I

IN2

I

OL

I

OL

V

OH2

V

OH3

V

OL

Output Disable, V

Output Disable, V

I

= –8 mA, V

OH

I

= –8 mA, V

OH

V

= 0 to V

IN

V

DD ≥ VIN ≥ VIH

0 V ≤ V

V
0 V ≤ V

IN

DD ≥ VIN ≥ VIL

IN

OUT

OUT

DDQ

DDQ

I

= 8 mA

OL

DD

≤ V

IH

≤ V

IL

= 0 to V

= 0 to V

= 2.375 V

= 3.135 V

DD

DD

–2 uA 2 uA

–1 uA
–1 uA

–100 uA

–1 uA

1 uA

100 uA

1 uA
1 uA

–1 uA 1 uA

–1 uA 1 uA

1.7 V —

2.4 V —

— 0.4 V

Rev: 1.06 9/2004 20/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

–40

0

–40

0

–40

0

–40

0

–40

85°C

70°C

85°C

70°C

85°C

70°C

85°C

70°C

85°C

mA

255

235

280

260

300

280

340

320

370

Unit

to

to

to

to

to

to

to

to

to

30

30

40

40

40

40

50

50

60

220

210

220

210

235

225

245

235

265

mA

20

20

30

30

30

30

30

30

40

mA

210

190

230

210

245

225

275

255

295

25

25

30

30

35

35

40

40

45

170

160

180

170

190

180

200

190

210

mA

15

15

20

20

20

20

20

20

25

mA

190

170

210

190

220

200

245

225

260

15

15

20

20

20

20

20

20

25

150

140

160

150

170

160

180

170

190

mA

15

15

15

15

15

15

15

15

15

mA

mA

mA

mA

0

to

to

–40

-250 -225 -200 -166 -150 -133
0

to

Operating Currents

Parameter Test Conditions Mode Symbol

70°C

85°C

70°C

350

400

380

DD

I

Pipeline

60

60

60

DDQ

I

255

285

275

DD

I

Flow

(x72)

40

275

40

320

40

300

DD

I

DDQ

I

Through

45

50

50

DDQ

I

Pipeline

(x36)

Device Selected;

All other inputs

Current

Operating

I

IL

or ≤ V

IH

≥V

200

220

210

DD

Flow

Output open

25

240

25

280

25

260

DD

I

DDQ

I

Through

25

25

25

DDQ

I

Pipeline

(x18)

180

200

190

DD

I

Flow

15

15

60 80 60 80 60 80 60 80 60 80 60 80

15

SB

I

DDQ

I

Pipeline

Through

60 80 60 80 60 80 60 80 60 80 60 80

SB

I

Flow

Through

—

– 0.2 V

DD

ZZ ≥ V

Current

Standby

100 115 95 110 90 105 85 100 85 100 80 95

DD

I

Flow

Pipeline

—

All other inputs

Device Deselected;

Deselect

85 100 85 100 80 95 80 95 75 90 70 85

DD

I

Through

IL

or ≤ V

IH

≥ V

Current

operation.

DDQ2

, and V

DDQ3

, V

DD2

, V

DD3

apply to any combination of V

DDQ

and I

DD

Notes:

1. I

2. All parameters listed are worst case scenario.

Rev: 1.06 9/2004 21/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

AC Electrical Characteristics

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Pipeline

Flow

Through

Parameter Symbol

Unit

Min Max Min Max Min Max Min Max Min Max Min Max

Clock Cycle Time tKC 4.0 — 4.4 — 5.0 — 6.0 — 6.7 — 7.5 — ns

Clock to Output Valid (x18/x36) tKQ — 2.5 — 2.7 — 3.0 — 3.5 — 3.8 — 4.0 ns

Clock to Output Valid (x72) tKQ — 3.0 — 3.0 — 3.0 — 3.5 — 3.8 — 4.0 ns

Clock to Output Invalid tKQX 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns

-250 -225 -200 -166 -150 -133

Clock to Output in Low-Z

Setup time tS 1.2 — 1.3 — 1.4 — 1.5 — 1.5 — 1.5 — ns

Hold time tH 0.2 — 0.3 — 0.4 — 0.5 — 0.5 — 0.5 — ns

Clock Cycle Time tKC 6.5 — 7.0 — 7.5 — 8.0 — 8.5 — 8.5 — ns

Clock to Output Valid tKQ — 6.5 — 7.0 — 7.5 — 8.0 — 8.5 — 8.5 ns

Clock to Output Invalid tKQX 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — ns

Clock to Output in Low-Z

Setup time tS 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns

Hold time tH 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns

Clock HIGH Time tKH 1.3 — 1.3 — 1.3 — 1.3 — 1.5 — 1.7 — ns

tLZ

tLZ

1

1.5 — 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns

1

3.0 — 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — ns

Clock LOW Time tKL 1.5 — 1.5 — 1.5 — 1.5 — 1.7 — 2 — ns

Clock to Output in

High-Z (x18/x36)

Clock to Output in

High-Z (x72)

G to Output Valid

(x18/x36)

G

to Output Valid

(x72)

G

to output in Low-Z

to output in High-Z (x18/x36)

G

G

to output in High-Z (x72)

ZZ setup time

ZZ hold time

ZZ recovery tZZR 20 — 20 — 20 — 20 — 20 — 20 — ns

1

tHZ

tHZ

tOE — 2.5 — 2.7 — 3.0 — 3.5 — 3.8 — 4.0 ns

tOE — 3.0 — 3.0 — 3.0 — 3.5 — 3.8 — 4.0 ns

tOLZ

tOHZ

tOHZ

tZZS

tZZH

1.5 2.5 1.5 2.7 1.5 3.0 1.5 3.0 1.5 3.0 1.5 3.0 ns

1

1.5 3.0 1.5 3.0 1.5 3.0 1.5 3.0 1.5 3.0 1.5 3.0 ns

1

0 — 0 — 0 — 0 — 0 — 0 — ns

1

— 2.5 — 2.7 — 3.0 — 3.0 — 3.0 — 3.0 ns

1

— 3.0 — 3.0 — 3.0 — 3.0 — 3.0 — 3.0 ns

2

5 — 5 — 5 — 5 — 5 — 5 — ns

2

1 — 1 — 1 — 1 — 1 — 1 — ns

Notes:

1. These parameters are sampled and are not 100% tested.

2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.

Rev: 1.06 9/2004 22/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Pipeline Mode Timing (SCD)

Begin Read A Cont Cont Deselect Write B Read C Read C+1 Read C+2 Read C+3 Cont Deselect

Burst ReadBurst ReadSingle Write

CK

ADSP

ADSC

ADV

A0–An

GW

tKH

tKH

Single WriteSingle Read

tKLtKL

tKCtKC

ADSC initiated read

Single Read

tS

tH

tHtS

tS

tH

ABC

tS

Preliminary

BW

Ba–Bd

E1

E2

E3

DQa–DQd

tHtS

tH

tS

tS

tS

tH

tS

tH

G

tH

E2 and E3 only sampled with ADSP and ADSC

tS

tOHZtOE

Q(A) D(B) Q(C) Q(C+1) Q(C+2) Q(C+3)

E1 masks ADSP

tLZtH

Deselected with E1

tKQXtKQ

tHZ

Rev: 1.06 9/2004 23/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Flow Through Mode Timing (SCD)

Begin Read A Cont Cont Write B Read C Read C+1 Read C+2 Read C+3 Read C Cont Deselect

tKLtKL

tKHtKH

CK

tKCtKC

ADSP

ADSC

ADV

A0–An

GW

BW

Ba–Bd

E1

Fixed High

tS

tH

tS

tH

tS

tH

ABC

tS

tH

tS

tH

tS

tH

ADSC initiated read

tS

tH

tS

tH

Deselected with E1

tS

tH

E2

tS

tH

E3

G

DQa–DQd

E2 and E3 only sampled with ADSC

tH

tS

tOHZtOE

Q(A) D(B) Q(C) Q(C+1) Q(C+2) Q(C+3) Q(C)

tKQ

tLZ

tHZ

tKQX

Rev: 1.06 9/2004 24/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Pipeline Mode Timing (DCD)

Begin Read A Cont Deselect Deselect Write B Read C Read C+1 Read C+2 Read C+3 Cont Deselect Deselect

tKLtKL

tKCtKC

ADSC initiated read

tHtS

tH

tS

CK

ADSP

ADSC

ADV

Ao–An

GW

BW

Ba–Bd

E1

E2

E3

tKHtKH

tS

tH

tHtS

tS

tH

ABC

tS

tS

tS

tH

tS

tH

tH

E2 and E3 only sampled with ADSC

Preliminary

Deselected with E1

G

tHZ

tKQX

DQa–DQd

Hi-Z

tOHZtOE

tS

Q(A) D(B) Q(C) Q(C+1) Q(C+2) Q(C+3)

tKQ

tLZtH

Rev: 1.06 9/2004 25/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Flow Through Mode Timing (DCD)

Begin Read A Cont Deselect Write B Read C Read C+1 Read C+2 Read C+3 Read C Deselect

tKLtKL

tKHtKH

CK

tKCtKC

Preliminary

ADSP

ADSC

ADV

Ao–An

GW

BW

Ba–Bd

E1

E2

E3

Fixed High

tS

tH

tH

tS

tS

tH

ABC

tS

tH

tS

tS

tH

tS

tH

tH

E2 and E3 only sampled with ADSP and ADSC

tS

tH

ADSC initiated read

tS

tH

tH

tS

E1 masks ADSP

E1 masks ADSP

tHtS

Deselected with E1

G

DQa–DQd

tOE

tKQ

tH

tS

tOHZ

Q(A) D(B) Q(C) Q(C+1) Q(C+2) Q(C+3) Q(C)

tLZ

tKQX

tHZ

Rev: 1.06 9/2004 26/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Sleep Mode

During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after ZZ recovery time.

Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I

2. The duration of

SB

Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become
disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.
When the ZZ pin is driven high, I

2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending

SB

operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated
until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands
may be applied while the SRAM is recovering from Sleep mode.

Sleep Mode Timing

tKHtKH

tKCtKC

CK

Setup

Hold

ADSP

ADSC

ZZ

tKLtKL

tZZR

tZZHtZZS

Application Tips

Single and Dual Cycle Deselect

SCD devices (like this one) force the use of “dummy read cycles” (read cycles that are launched normally, but that are ended with
the output drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance, but their use usually
assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste
bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at
bank address boundary crossings), but greater care must be exercised to avoid excessive bus contention.

JTAG Port Operation

Overview

The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan
interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with V

drivers are powered by V

DDQ

.

Disabling the JTAG Port

It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless
clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG
Port unused, TCK, TDI, and TMS may be left floating or tied to either V

or VSS. TDO should be left unconnected.

DD

Rev: 1.06 9/2004 27/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

. The JTAG output

DD

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

JTAG Pin Descriptions

Pin Pin Name I/O Description

TCK Test Clock In

TMS Test Mode Select In

TDI Test Data In In

TDO Test Data Out Out

Note:

This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is
held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up.

Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate
from the falling edge of TCK.

The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP
controller state machine. An undriven TMS input will produce the same result as a logic one input
level.

The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers
placed between TDI and TDO. The register placed between TDI and TDO is determined by the
state of the TAP Controller state machine and the instruction that is currently loaded in the TAP
Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce
the same result as a logic one input level.

Output that is active depending on the state of the TAP state machine. Output changes in
response to the falling edge of TCK. This is the output side of the serial registers placed between
TDI and TDO.

JTAG Port Registers

Overview

The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s
and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the
rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the
TDI and TDO pins.

Instruction Register

The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or
the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the
TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the
controller is placed in Test-Logic-Reset state.

Bypass Register

The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through
the RAM’s JTAG Port to another device in the scan chain with as little delay as possible.

Boundary Scan Register

The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins.
The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin. The
Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the
device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan
Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in
Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z,
SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.

Rev: 1.06 9/2004 28/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

TDI

·· ······

·

·

108

GS832218(B/E)/GS832236(B/E)/GS832272(C)

JTAG TAP Block Diagram

Boundary Scan Register

0

Bypass Register

012

Instruction Register

ID Code Register

31 30 29 12

····

0

Preliminary

·

1

0

TDO

Control Signals

TMS

TCK

Test Access Port (TAP) Controller

Identification (ID) Register

The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in
Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.
It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the
controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.

ID Register Contents TBD for this part.

Rev: 1.06 9/2004 29/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

ID Register Contents

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Die

Revision

Code

Bit # 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

x72 XXXX0000000000001001000110110011

x36 XXXX0000000000001000000110110011

x32 XXXX0000000000001100000110110011

x18 XXXX0000000000001010000110110011

x16 XXXX0000000000001110000110110011

Not Used

I/O

Configuration

GSI Technology

JEDEC Vendor

ID Code

Presence Register

Tap Controller Instruction Set

Overview

There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific
(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be
implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load
address, data or control signals into the RAM or to preload the I/O buffers.

When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.
When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired
instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the
TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this
device is listed in the following table.

Rev: 1.06 9/2004 30/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Test Logic Reset

1

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

JTAG Tap Controller State Diagram

0

Run Test Idle

0

111

Select DR

1

Capture DR

Shift DR

1

Exit1 DR

Pause DR

Exit2 DR

Update DR

1

Select IR

0

1

0

0

Capture IR

0

Shift IR

1

0

0

1

1

Exit1 IR

0

Pause IR

1

1

0

0 0

1

Exit2 IR

1

Update IR

0

10

0

0

Instruction Descriptions

BYPASS

When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This
occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facili­tate testing of other devices in the scan path.

SAMPLE/PRELOAD

SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is
loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and
I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and
are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because
the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents
while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will
not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the
TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP
operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then
places the boundary scan register between the TDI and TDO pins.

EXTEST

EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with
all logic 0s. The EXTEST command does not block or override the RAM’s input pins; therefore, the RAM’s internal state is
still determined by its input pins.

Rev: 1.06 9/2004 31/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command.
Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output
drivers on the falling edge of TCK when the controller is in the Update-IR state.

Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruc­tion is selected, the sate of all the RAM’s input and I/O pins, as well as the default values at Scan Register locations not asso­ciated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR
state, the RAM’s output pins drive out the value of the Boundary Scan Register location with which each output pin is associ­ated.

IDCODE

The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and
places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction
loaded in at power up and any time the controller is placed in the Test-Logic-Reset state.

SAMPLE-Z

If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (high­Z) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR
state.

RFU

These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction.

JTAG TAP Instruction Set Summary

Instruction Code Description Notes

EXTEST 000 Places the Boundary Scan Register between TDI and TDO. 1

IDCODE 001 Preloads ID Register and places it between TDI and TDO. 1, 2

Captures I/O ring contents. Places the Boundary Scan Register between TDI and

SAMPLE-Z 010

RFU 011

SAMPLE/

PRELOAD

GSI 101 GSI private instruction. 1

RFU 110

BYPASS 111 Places Bypass Register between TDI and TDO. 1

Notes:

1. Instruction codes expressed in binary, MSB on left, LSB on right.

2. Default instruction automatically loaded at power-up and in test-logic-reset state.

100

TDO.
Forces all RAM output drivers to High-Z.

Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.

Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.

Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.

1

1

1

1

Rev: 1.06 9/2004 32/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

JTAG Port Recommended Operating Conditions and DC Characteristics

Parameter Symbol Min. Max. Unit Notes

3.3 V Test Port Input High Voltage

3.3 V Test Port Input Low Voltage

2.5 V Test Port Input High Voltage

2.5 V Test Port Input Low Voltage

TMS, TCK and TDI Input Leakage Current

TMS, TCK and TDI Input Leakage Current

TDO Output Leakage Current

Test Port Output High Voltage

Test Port Output Low Voltage

Test Port Output CMOS High

Test Port Output CMOS Low

Notes:

1. Input Under/overshoot voltage must be –2 V > Vi < V

2. V

3. 0 V ≤ V

4. Output Disable, V

5. The TDO output driver is served by the V

6. I

7. I

8. I

9. I

ILJ

OHJ

OLJ

OHJC

OHJC

≤ V

IN

IN

= –4 mA

= + 4 mA

= –100 uA

= +100 uA

≤ V
≤ V

DDn

ILJn

OUT

= 0 to V

DDn

DDQ

supply.

JTAG Port AC Test Conditions

+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC.

DDn

V

V

V

V

I

I

V

V

V

V

IHJ3

ILJ3

IHJ2

ILJ2

INHJ

INLJ

I

OLJ

OHJ

OLJ

OHJC

OLJC

V

DDQ

0.6 * V

Preliminary

V

2.0

–0.3 0.8 V 1

DD2

–0.3

–300 1 uA 2

–1 100 uA 3

–11uA4

1.7 — V5, 6

— 0.4 V 5, 7

– 100 mV

— 100 mV V 5, 9

DD3

V

DD2

0.3 * V

+0.3

+0.3

DD2

V1

V1

V1

— V5, 8

Parameter Conditions

V

Input high level

– 0.2 V

DD

DQ

JTAG Port AC Test Load

Input low level 0.2 V

Input slew rate 1 V/ns

Input reference level

Output reference level

50Ω

V

/2

V

DDQ

DDQ

/2

* Distributed Test Jig Capacitance

V

DDQ

/2

30pF

*

Notes:

1. Include scope and jig capacitance.

2. Test conditions as as shown unless otherwise noted.

Rev: 1.06 9/2004 33/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

TCK

TDI

TMS

TDO

Parallel SRAM input

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

JTAG Port Timing Diagram

tTKLtTKLtTKHtTKHtTKCtTKC

tTH

tTS

tTH

tTS

tTKQ

tTH

tTS

JTAG Port AC Electrical Characteristics

Parameter Symbol Min Max Unit

TCK Cycle Time tTKC 50 — ns

TCK Low to TDO Valid tTKQ — 20 ns

TCK High Pulse Width tTKH 20 — ns

TCK Low Pulse Width tTKL 20 — ns

TDI & TMS Set Up Time tTS 10 — ns

TDI & TMS Hold Time tTH 10 — ns

Boundary Scan (BSDL Files)

For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications
Engineering Department at: [e-mail]

.

Rev: 1.06 9/2004 34/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

209 BGA Package Drawing (Package C)

14 mm x 22 mm Body, 1.0 mm Bump Pitch, 11 x 19 Bump Array

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

A1

C

A

aaa

e

∅

D

D1

b

e

E1

Side View

E

Bottom View

Symbol Min Typ Max Units Symbol Min Typ Max Units

A — — 1.70 mm D1 — 18.0 (BSC) — mm

A1 0.40 0.50 0.60 mm E 13.9 14.0 14.1 mm

∅b 0.50 0.60 0.70 mm E1 — 10.0 (BSC) — mm

c 0.31 0.36 0.38 mm e — 1.00 (BSC) — mm

D 21.9 22.0 22.1 mm aaa —0.15— mm

Rev 1.0

Rev: 1.06 9/2004 35/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Package Dimensions—119-Bump FPBGA (Package B, Variation 2)

Preliminary

A1

TOP VIEW

Ø0.10
Ø0.30

S

C

S

C A B

1 2 3 4 5 6 7

A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U

C

0.15

0.70±0.05

C

0.15

22±0.10

B

BOTTOM VIEW

S

S

1.27

20.32

A

0.20(4x)

A1

Ø0.60~0.90 (119x)

7 6 5 4 3 2 1

A

B

C

D

E

F

G

H

J

K

L

M

N

P

R

T

U

1.27

7.62

14±0.10

C

0.56±0.05

SEATING PLANE

0.50~0.70

1.86.±0.13

Rev: 1.06 9/2004 36/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Package Dimensions—165-Bump FPBGA (Package E; Variation 1)

Preliminary

A1

TOP VIEW

1 2 3 4 5 6 7 8 9 10 11

A
B
C

D
E
F

G
H
I

J
K
L

M
N
P

R

C

0.25

0.53 REF

C

0.20

M

Ø0.10

C

M

Ø0.25

C AB

Ø0.44~0.64(165x)

14.0

17±0.05

A

0.20(4x)

BOTTOM VIEW

11 10 9 8 7 6 5 4 3 2 1

1.01.0

1.0 1.0

10.0

B

15±0.05

A1

A
B
C

D
E
F

G
H
J

K
L
M

N
P
R

C

0.36 REF

SEATING PLANE

0.36~0.46

1.40 MAX.

Rev: 1.06 9/2004 37/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Ordering Information for GSI Synchronous Burst RAMs

2

Org

2M x 18 GS832218B-250 DCD Pipeline/Flow Through 119 BGA (var.2) 250/6.5 C

2M x 18 GS832218B-225 DCD Pipeline/Flow Through 119 BGA (var.2) 225/7 C

2M x 18 GS832218B-200 DCD Pipeline/Flow Through 119 BGA (var.2) 200/7.5 C

2M x 18 GS832218B-166 DCD Pipeline/Flow Through 119 BGA (var.2) 166/8 C

2M x 18 GS832218B-150 DCD Pipeline/Flow Through 119 BGA (var.2) 150/8.5 C

2M x 18 GS832218B-133 DCD Pipeline/Flow Through 119 BGA (var.2) 133/8.5 C

2M x 18 GS832218E-250 DCD Pipeline/Flow Through 165 BGA (var.1) 250/6.5 C

2M x 18 GS832218E-225 DCD Pipeline/Flow Through 165 BGA (var.1) 225/7 C

Part Number

1

Type Package

Speed

(MHz/ns)

3

T

A

2M x 18 GS832218E-200 DCD Pipeline/Flow Through 165 BGA (var.1) 200/7.5 C

2M x 18 GS832218E-166 DCD Pipeline/Flow Through 165 BGA (var.1) 166/8 C

2M x 18 GS832218E-150 DCD Pipeline/Flow Through 165 BGA (var.1) 150/8.5 C

2M x 18 GS832218E-133 DCD Pipeline/Flow Through 165 BGA (var.1) 133/8.5 C

1M x 36 GS832236B-250 SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 250/6.5 C

1M x 36 GS832236B-225 SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 225/7 C

1M x 36 GS832236B-200 SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 200/7.5 C

1M x 36 GS832236B-166 SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 166/8 C

1M x 36 GS832236B-150 SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 150/8.5 C

1M x 36 GS832236B-133 SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 133/8.5 C

1M x 36 GS832236E-250 SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 250/6.5 C

1M x 36 GS832236E-225 SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 225/7 C

1M x 36 GS832236E-200 SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 200/7.5 C

1M x 36 GS832236E-166 SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 166/8 C

1M x 36 GS832236E-150 SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 150/8.5 C

Notes:

1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS832218B-150IB.

2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.

3. T

= C = Commercial Temperature Range. TA = I = Industrial Temperature Range.

A

4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com

Rev: 1.06 9/2004 38/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

) for a complete listing of current offerings.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Ordering Information for GSI Synchronous Burst RAMs (Continued)

2

Org

1M x 36 GS832236E-133 SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 133/8.5 C

512K x 72 GS832272C-250 SCD/DCD Pipeline/Flow Through 209 BGA 250/6.5 C

512K x 72 GS832272C-225 SCD/DCD Pipeline/Flow Through 209 BGA 225/7 C

512K x 72 GS832272C-200 SCD/DCD Pipeline/Flow Through 209 BGA 200/7.5 C

512K x 72 GS832272C-166 SCD/DCD Pipeline/Flow Through 209 BGA 166/8 C

512K x 72 GS832272C-150 SCD/DCD Pipeline/Flow Through 209 BGA 150/8.5 C

512K x 72 GS832272C-133 SCD/DCD Pipeline/Flow Through 209 BGA 133/8.5 C

2M x 18 GS832218B-250I DCD Pipeline/Flow Through 119 BGA (var.2) 250/6.5 I

2M x 18 GS832218B-225I DCD Pipeline/Flow Through 119 BGA (var.2) 225/7 I

2M x 18 GS832218B-200I DCD Pipeline/Flow Through 119 BGA (var.2) 200/7.5 I

Part Number

1

Type Package

Speed

(MHz/ns)

3

T

A

2M x 18 GS832218B-166I DCD Pipeline/Flow Through 119 BGA (var.2) 166/8 I

2M x 18 GS832218B-150I DCD Pipeline/Flow Through 119 BGA (var.2) 150/8.5 I

2M x 18 GS832218B-133I DCD Pipeline/Flow Through 119 BGA (var.2) 133/8.5 I

2M x 18 GS832218E-250I DCD Pipeline/Flow Through 165 BGA (var.1) 250/6.5 I

2M x 18 GS832218E-225I DCD Pipeline/Flow Through 165 BGA (var.1) 225/7 I

2M x 18 GS832218E-200I DCD Pipeline/Flow Through 165 BGA (var.1) 200/7.5 I

2M x 18 GS832218E-166I DCD Pipeline/Flow Through 165 BGA (var.1) 166/8 I

2M x 18 GS832218E-150I DCD Pipeline/Flow Through 165 BGA (var.1) 150/8.5 I

2M x 18 GS832218E-133I DCD Pipeline/Flow Through 165 BGA (var.1) 133/8.5 I

1M x 36 GS832236B-250I SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 250/6.5 I

1M x 36 GS832236B-225I SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 225/7 I

1M x 36 GS832236B-200I SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 200/7.5 I

1M x 36 GS832236B-166I SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 166/8 I

1M x 36 GS832236B-150I SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 150/8.5 I

1M x 36 GS832236B-133I SCD/DCD Pipeline/Flow Through 119 BGA (var.2) 133/8.5 I

Notes:

1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS832218B-150IB.

2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.

3. T

= C = Commercial Temperature Range. TA = I = Industrial Temperature Range.

A

4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com

Rev: 1.06 9/2004 39/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

) for a complete listing of current offerings.

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

Ordering Information for GSI Synchronous Burst RAMs (Continued)

2

Org

1M x 36 GS832236E-250I SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 250/6.5 I

1M x 36 GS832236E-225I SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 225/7 I

1M x 36 GS832236E-200I SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 200/7.5 I

1M x 36 GS832236E-166I SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 166/8 I

1M x 36 GS832236E-150I SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 150/8.5 I

1M x 36 GS832236E-133I SCD/DCD Pipeline/Flow Through 165 BGA (var.1) 133/8.5 I

512K x 72 GS832272C-250I SCD/DCD Pipeline/Flow Through 209 BGA 250/6.5 I

512K x 72 GS832272C-225I SCD/DCD Pipeline/Flow Through 209 BGA 225/7 I

512K x 72 GS832272C-200I SCD/DCD Pipeline/Flow Through 209 BGA 200/7.5 I

512K x 72 GS832272C-166I SCD/DCD Pipeline/Flow Through 209 BGA 166/8 I

Part Number

1

Type Package

Speed

(MHz/ns)

3

T

A

512K x 72 GS832272C-150I SCD/DCD Pipeline/Flow Through 209 BGA 150/8.5 I

512K x 72 GS832272C-133I SCD/DCD Pipeline/Flow Through 209 BGA 133/8.5 I

Notes:

1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS832218B-150IB.

2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.

3. T

= C = Commercial Temperature Range. TA = I = Industrial Temperature Range.

A

4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com

) for a complete listing of current offerings.

Rev: 1.06 9/2004 40/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

36Mb Sync SRAM Data Sheet Revision History

Preliminary

GS832218(B/E)/GS832236(B/E)/GS832272(C)

DS/DateRev. Code: Old;

New

832218_r1

832218_r1; 832218_r1_01 Content

832218_r1_01;

832218_r1_02

832218_r1_02;

832218_r1_03

832218_r1_03;

832218_r1_04

832218_r1_04;

832218_r1_05

Types of Changes

Format or Content

Content

Content/Format

Content/Format

Content/Format

Page;Revisions;Reason

• Creation of new datasheet

• Added 165-BGA package

• Updated all power numbers on page 1 and page 26

• Updated AC Characteristics table

• Removed all references to parity

• Updated tables on page 23

• Updated FT power numbers

• Updated Absolute Maximum Ratings table

• Corrected Capacitance table

• Updated tKQ (PL) numbers in table on page 1

• Updated DC Electrical Characteristics table

• Removed Output Load 2 diagram on page 15

• Updated standby current numbers in Operating Currents table

• Updated timing diagrams

• Removed erroneous overbars from address pins on the x18
165 BGA pinout

• Corrected thickness of “E” package to 1.4 mm

• Added Thermal Characteristics table to datasheet

• Basic format updating

• Removed erroneous parity references from block diagrams

• Removed Thermal Characteristics table from Abs Max section
and added specific thermal tables for each mechanical
drawing

• Basic format update

• Updated format

• Added missing tH (Pipeline) in AC Characteristics table

832218_r1_05;

832218_r1_06

Rev: 1.06 9/2004 41/41 © 2001, GSI Technology

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Content/Format

• Corrected note 1 on table on page 33

• Corrected mechanical drawings