Datasheet GS74108AX-10, GS74108ATP-8, GS74108ATP-7I, GS74108ATP-7, GS74108ATP-12I Datasheet (GSI)

Rev: 1.03a 10/2002 1/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

512K x 8

4Mb Asynchronous SRAM

7, 8, 10, 12 ns

3.3 V V

DD

Center VDD and V

SS

SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp

Features

• Fast access time: 7, 8, 10, 12 ns

• CMOS low power operation: 135/120/95/85 mA at minimum
cycle time

• Single 3.3 V power supply

• All inputs and outputs are TTL-compatible

• Fully static operation

• Industrial Temperature Option: –40° to 85°C

• Package line up

J: 400 mil, 36-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
X: 6 mm x 10 mm Fine Pitch Ball Grid Array
package

Description

The GS74108A is a high speed CMOS Static RAM organized
as 524,288 words by 8 bits. Static design eliminates the need
for external clocks or timing strobes. The GS74108A operates
on a single 3.3 V power supply and all inputs and outputs are
TTL-compatible. The GS74108A is available in 400 mil SOJ,
400 mil TSOP Type-II, and 6 mm x 10 mm FP-BGA packages.

Pin Descriptions

SOJ 512K x 8-Pin Configuration

FP-BGA 512K x 8 Bump Configuration (Package X)

6 x 10 mm

Symbol Description

A0–A

18

Address input

DQ

1–DQ8 Data input/output

CE

Chip enable input

WE

Write enable input

OE

Output enable input

V

DD

+3.3 V power supply

V

SS

Ground

NC No connect

123456

ANCOE

A

2

A

6

A7NC

BDQ1NC A

1

A5CE DQ

8

CDQ2NC A

0

A4NC DQ

7

DVSSNC A

18A3

NC V

DD

EVDDNC A

17A9

NC V

SS

FDQ3NC A

13A10

NC DQ

6

GDQ4NC A

14A11

WE DQ

5

HNCA16A

15A12A8

NC

36

35

34

33

32

31

30

29

28

27

26

25

24

23

22

21

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

A

4

A

3

A

2

A

1

A

0

CE

DQ

1

DQ

2

V

DD

V

SS

DQ

3

DQ

4

WE

A

17

A

16

A

15

NC

A

5

A

6

A

7

A

8

OE

DQ

8

DQ

7

V

SS

V

DD

DQ

6

DQ

5

A

9

A

10

A

11

A

12

36-pin

400 mil SOJ

17

18

A

14

A

13

20

19

NC

A

18

Rev: 1.03a 10/2002 2/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

TSOP-II 512K x 8-Pin Configuration

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

3
4

5
6
7
8

9
10
11
12
13

14
15
16
17

18

A

4

A

3

A

2

A

1

A

0

CE
DQ

1

DQ

2

V

DD

V

SS

DQ

3

DQ

4

WE

NC
A

5

A

6

A

7

A

8

OE
DQ

8

DQ

7

V

SS

V

DD

DQ

6

DQ

5

A

10

A

11

A

12

A

18

44-pin

400 mil TSOP II

19
20

26

25

NC

21

22

NC
NC

24

23

NC
NC

1

2

NC
NC

44

43

NC
NC

A

9

A

13

A

17

A

16

A

15

A

14

Memory Array

Row

Decoder

Column
Decoder

Address

Input

Buffer

Control

I/O Buffer

A

0

CE

WE

OE

DQ

1

A

18

Block Diagram

DQ

8

Rev: 1.03a 10/2002 3/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

Note: X: “H” or “L”

Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec­ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.

Truth Table

CE OE WE DQ1 to DQ

8

VDD Current

H X X Not Selected ISB1, ISB

2

L L H Read

I

DD

LX L Write

LH H High Z

Absolute Maximum Ratings

Parameter Symbol Rating Unit

Supply Voltage V

DD

–0.5 to +4.6 V

Input Voltage V

IN

–0.5 to V

DD

+0.5

(≤ 4.6 V max.)

V

Output Voltage V

OUT

–0.5 to V

DD

+0.5

(≤ 4.6 V max.)

V

Allowable power dissipation PD 0.7 W

Storage temperature T

STG –55 to 150

o

C

Rev: 1.03a 10/2002 4/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

Note:

1. Input overshoot voltage should be less than V

DD

+2 V and not exceed 20 ns.

2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.

Notes:

1. Tested at T

A = 25°C, f = 1 MHz

2. These parameters are sampled and are not 100% tested.

Recommended Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply Voltage for -7/-8/-10/-12

V

DD

3.0 3.3 3.6 V

Input High Voltage V

IH

2.0 —

V

DD

+0.3

V

Input Low Voltage V

IL

–0.3 — 0.8 V

Ambient Temperature,

Commercial Range

T

Ac

0—70

o

C

Ambient Temperature,

Industrial Range

T

A

I

–40 — 85

o

C

Capacitance

Parameter Symbol Test Condition Max Unit

Input Capacitance CIN VIN = 0 V 5 pF

Output Capacitance C

OUT

V

OUT

= 0 V 7 pF

DC I/O Pin Characteristics

Parameter Symbol Test Conditions Min Max

Input Leakage

Current

IIL

VIN = 0 to V

DD

– 1 uA 1 uA

Output Leakage

Current

I

LO

Output High Z

V

OUT = 0 to V

DD

–1 uA 1 uA

Output High Voltage V

OH IOH = –4 mA 2.4 —

Output Low Voltage V

OL ILO = +4 mA — 0.4 V

Rev: 1.03a 10/2002 5/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

AC Test Conditions

Power Supply Currents

Parameter Symbol Test Conditions

0 to 70°C –40 to 85°C

7 ns 8 ns 10 ns 12 ns 7 ns 8 ns 10 ns 12 ns

Operating

Supply

Current

I

DD

CE ≤ VIL

All other inputs

≥ V

IH or ≤ VIL

Min. cycle time

I

OUT = 0 mA

135 mA 120 mA 95 mA 85 mA 145 mA 130 mA 105 mA 95 mA

Standby

Current

I

SB1

CE ≥ V

IH

All other inputs

≥ V

IH

or ≤V

IL

Min. cycle time

35 mA 30 mA 25 mA 22 mA 45 mA 40 mA 35 mA 32 mA

Standby

Current

I

SB2

CE ≥ V

DD

- 0.2V

All other inputs

≥ V

DD

- 0.2V or ≤

0.2V

10 mA 20 mA

DQ

VT = 1.4 V

50Ω

30pF

1

DQ

3.3 V

Output Load 1

Output Load 2

589Ω

434Ω

5pF

1

Note:

1. Include scope and jig capacitance.

2. Test conditions as specified with output loading as shown in

Fig. 1

unless otherwise noted.

3. Output load 2 for t

LZ

, tHZ, t

OLZ

and t

OHZ

Parameter Conditions

Input high level VIH = 2.4 V

Input low level V

IL

= 0.4 V

Input rise time tr = 1 V/ns

Input fall time tf = 1 V/ns

Input reference level 1.4 V

Output reference level 1.4 V

Output load Fig. 1& 2

Rev: 1.03a 10/2002 6/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

AC Characteristics

* These parameters are sampled and are not 100% tested.

Read Cycle 1: CE = OE = VIL, WE = V

IH

Read Cycle

Parameter Symbol

-7 -8 -10 -12
Unit

Min Max Min Max Min Max Min Max

Read cycle time t

RC

7—8 —10—12— ns

Address access time t

AA —7— 8 —10—12 ns

Chip enable access time (CE

)t

AC

—7— 8 —10—12 ns

Output enable to output valid (OE

)tOE—3—3.5—4—5 ns

Output hold from address change t

OH 3—3—3—3— ns

Chip enable to output in low Z (CE

)

t

LZ

*

3—3—3—3— ns

Output enable to output in low Z (OE

)

t

OLZ

*

0—0—0—0— ns

Chip disable to output in High Z (CE

)

t

HZ

*

—3.5—4—5—6 ns

Output disable to output in High Z (OE

)

t

OHZ

*

—3—3.5—4—5 ns

tAA

tOH

t

RC

Address

Data Out Previous Data Data valid

Rev: 1.03a 10/2002 7/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

Read Cycle 2: WE = V

IH

* These parameters are sampled and are not 100% tested.

Write Cycle

Parameter Symbol

-7 -8 -10 -12
Unit

Min Max Min Max Min Max Min Max

Write cycle time tWC 7 — 8 — 10 — 12 — ns

Address valid to end of write tAW 5 — 5.5 — 7 — 8 — ns

Chip enable to end of write tCW 5 — 5.5 — 7 — 8 — ns

Data set up time tDW 3.5 — 4 — 5 — 6 — ns

Data hold time tDH 0 — 0 — 0 — 0 — ns

Write pulse width tWP 5 — 5.5 — 7 — 8 — ns

Address set up time tAS 0 — 0 — 0 — 0 — ns

Write recovery time (WE

) tWR0—0—0—0— ns

Write recovery time (CE

)tWR10—0—0—0—ns

Output Low Z from end of write

tWLZ

*

3—3—3—3—ns

Write to output in High Z

tWHZ

*

—3 —3.5— 4 — 5 ns

t

AA

tRC

Address

t

AC

t

LZ

t

OE

tOLZ

CE

OE

Data Out

t

HZ

t

OHZ

D

ATA VALID

High impedance

Rev: 1.03a 10/2002 8/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

Write Cycle 1: WE control

Write Cycle 2: CE control

t

WC

Address

CE

WE

Data In

OE

Data Out

tAW

tCW

t

AS

t

WP

tWR

t

DW

t

DH

tWLZtWHZ

D

ATA VALID

H

IGH IMPEDANCE

tWC

Address

CE

WE

Data In

OE

Data Out

t

AW

tWP

tAS tCW

t

WR1

t

DW

t

DH

D

ATA VALID

H

IGH IMPEDANCE

Rev: 1.03a 10/2002 9/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

36-Pin SOJ, 400 mil

1

e

B1

D

A1

A2

y

E

H

E

Q

c

L

G

E

Detail A

A

B

A

Notes:

1. Dimension D& E do not include interlead flash.

2. Dimension B1 does not include dambar protrusion/intrusion.

3. Controlling dimension: inches

Symbol

Dimension in inch Dimension in mm

min nom max min nom max

A — — 0.146 — — 3.70

A1 0.026 — — 0.66 — —

A2 0.105 0.110 0.115 2.67 2.80 2.92

B 0.013 0.017 0.021 0.33 0.43 0.53

B1 0.024 0.028 0.032 0.61 0.71 0.81

c 0.006 0.008 0.012 0.15 0.20 0.30

D 0.920 0.924 0.929 23.37 23.47 23.60

E 0.395 0.400 0.405 10.04 10.16 10.28

e — 0.05 — — 1.27 —

H

E

0.430 0.435 0.440 10.93 11.05 11.17

G

E 0.354 0.366 0.378 9.00 9.30 9.60

L 0.082 — — 2.08 — —

y — — 0.004 — — 0.10

Q

0

o

—

10

o

0

o

—

10

o

Rev: 1.03a 10/2002 10/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

44-Pin, 400 mil TSOP-II

D

122

2344

e

B

Q

A

A1

A2

y

c

Detail A

E

H

E

L

L1

A

Notes:

1. Dimension D& E do not include interlead flash.

2. Dimension B does not include dambar protrusion/intrusion.

3. Controlling dimension: mm

Symbol

Dimension in inch Dimension in mm

min nom max min nom max

A — — 0.047 — — 1.20

A1 0.002 — — 0.05 — —

A2 0.037 0.039 0.041 0.95 1.00 1.05

B 0.01 0.014 0.018 0.25 0.35 0.45

c — 0.006 — — 0.15 —

D 0.721 0.725 0.729 18.31 18.41 18.51

E 0.396 0.400 0.404 10.06 10.16 10.26

e — 0.031 — — 0.80 —

H

E

0.455 0.463 0.471 11.56 11.76 11.96

L 0.016 0.020 0.024 0.40 0.50 0.60

L1 — 0.031 — — 0.80 —

y — — 0.004 — — 0.10

Q

0

o

—

5

o

0

o

—

5

o

Rev: 1.03a 10/2002 11/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

6 mm x 10 mm FP-BGA

Pin A1
Index

A1

E

Top View

Side View

D

A

aaa

Pin A1
Index

E1

Bottom View

D1

c

e

e

Solder Ball

fb

Symbol Unit: mm

A 1.10±0.10

A1 0.20~0.30

f

b

f

0.30~0.40

c 0.36(TYP)

D 10.0±0.05

D1 5.25

E 6.0±0.05

E1 3.75

e 0.75(TYP)

aaa 0.10

A B C D E F G H

1
2
3
4
5
6

Rev: 1.03a 10/2002 12/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

*

Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. For example:

GS74108ATP-8T

Ordering Information

Part Number

*

Package Access Time Temp. Range Status

GS74108ATP-7 400 mil TSOP-II 7 ns Commercial

GS74108ATP-8 400 mil TSOP-II 8 ns Commercial

GS74108ATP-10 400 mil TSOP-II 10 ns Commercial

GS74108ATP-12 400 mil TSOP-II 12 ns Commercial

GS74108ATP-7I 400 mil TSOP-II 7 ns Industrial

GS74108ATP-8I 400 mil TSOP-II 8 ns Industrial

GS74108ATP-10I 400 mil TSOP-II 10 ns Industrial

GS74108ATP-12I 400 mil TSOP-II 12 ns Industrial

GS74108AJ-7 400 mil SOJ 7 ns Commercial

GS74108AJ-8 400 mil SOJ 8 ns Commercial

GS74108AJ-10 400 mil SOJ 10 ns Commercial

GS74108AJ-12 400 mil SOJ 12 ns Commercial

GS74108AJ-7I 400 mil SOJ 7 ns Industrial

GS74108AJ-8I 400 mil SOJ 8 ns Industrial

GS74108AJ-10I 400 mil SOJ 10 ns Industrial

GS74108AJ-12I 400 mil SOJ 12 ns Industrial

GS74108AX-7 6 mm x 10 mm FP-BGA 7 ns Commercial

GS74108AX-8 6 mm x 10 mm FP-BGA 8 ns Commercial

GS74108AX-10 6 mm x 10 mm FP-BGA 10 ns Commercial

GS74108AX-12 6 mm x 10 mm FP-BGA 12 ns Commercial

GS74108AX-7I 6 mm x 10 mm FP-BGA 7 ns Industrial

GS74108AX-8I 6 mm x 10 mm FP-BGA 8 ns Industrial

GS74108AX-10I 6 mm x 10 mm FP-BGA 10 ns Industrial

GS74108AX-12I 6 mm x 10 mm FP-BGA 12 ns Industrial

Rev: 1.03a 10/2002 13/13 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

4M Asynchronous Datasheet Revision History

Rev. Code: Old;

New

Types of Changes
Format or Content

Page #/Revisions/Reason

74108A_r1 Format/Content

• Creation of new datasheet

74108A_r1; 74108A_r1_01 Content

• Added 6 ns speed bin

• Updated all power numbers

74108A_r1_01; 74108A_r1_02 Content

• Updated Recommended Operating Conditions table on page 4

• Added 7 ns bin to entire document

• Added X package

74108A_r1_02; 74108A_r1_03 Content

• Removed 6 ns speed bin from entire document

• Corrected “X” package pinout