Datasheet GS74104ATP-15, GS74104ATP-12I, GS74104ATP-12, GS74104ATP-10, GS74104AJ-8I Datasheet (GSI)

Rev: 1.03b 10/2002 1/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

1M x 4

4Mb Asynchronous SRAM

7, 8, 10, 12 ns

3.3 V V

DD

Center VDD and V

SS

SOJ, TSOP
Commercial Temp
Industrial Temp

Features

• Fast access time: 7, 8, 10, 12 ns

• CMOS low power operation: 135/120/95/85 mA at minimum
cycle time

• Single 3.3 V power supply

• All inputs and outputs are TTL-compatible

• Fully static operation

• Industrial Temperature Option: –40° to 85°C

• Package line up

J: 400 mil, 32-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package

Description

The GS74104A is a high speed CMOS Static RAM organized
as 1,048,576 words by 4 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a
single 3.3 V power supply and all inputs and outputs are TTL­compatible. The GS74104A is available in 400 mil SOJ and
400 mil TSOP Type-II packages.

Pin Descriptions

SOJ 1M x 4-Pin Configuraton

TSOP-II 1M x 4-Pin Configuration

Symbol Description

A0–A

19

Address input

DQ

1–DQ4 Data input/output

CE

Chip enable input

WE

Write enable input

OE

Output enable input

V

DD

+3.3 V power supply

V

SS

Ground

NC No connect

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16

A

4

A

3

A

2

A

1

A

0

CE
DQ

1

V

DD

V

SS

DQ

2

WE
A

19

A

18

A

17

A

16

A

15

A

5

A

6

A

7

A

8

A

9

OE
DQ

4

V

SS

V

DD

DQ

3

A

10

A

11

A

12

A

13

A

14

NC

32-pin

400 mil SOJ

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

NC

A

4

A

3

A

2

A

1

A

0

CE

DQ

1

V

DD

V

SS

DQ

2

WE

A

19

A

18

A

17

A

16

NC

A

5

A

6

A

7

A

8

A

9

OE

DQ

4

V

SS

V

DD

DQ

3

A

10

A

11

A

12

A

13

A

14

44-pin

400 mil TSOP II

19

20

A

15

NC

26

25

NC

NC

21

22

NC

NC

24

23

NC

NC

1

2

NC

NC

44

43

NC

NC

Rev: 1.03b 10/2002 2/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

Note: X: “H” or “L”

Truth Table

CE OE WE DQ1 to DQ

8

VDD Current

H X X Not Selected ISB1, ISB

2

L L H Read

I

DD

LX L Write

LH H High Z

Memory Array

Row

Decoder

Column
Decoder

Address

Input

Buffer

Control

I/O Buffer

A

0

CE

WE

OE

DQ

1

A

19

Block Diagram

DQ

4

Rev: 1.03b 10/2002 3/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec­ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.

Notes:

1. Input overshoot voltage should be less than V

DD

+2 V and not exceed 20 ns.

2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.

Notes:

1. Tested at T

A

= 25°C, f = 1 MHz

2. These parameters are sampled and are not 100% tested.

Absolute Maximum Ratings

Parameter Symbol Rating Unit

Supply Voltage V

DD

–0.5 to +4.6 V

Input Voltage V

IN

–0.5 to V

DD

+0.5

(≤ 4.6 V max.)

V

Output Voltage V

OUT

–0.5 to V

DD

+0.5

(≤ 4.6 V max.)

V

Allowable power dissipation PD 0.7 W

Storage temperature T

STG

–55 to 150

o

C

Recommended Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply Voltage for -7/-8/-10/-12

V

DD

3.0 3.3 3.6 V

Input High Voltage V

IH

2.0 —

V

DD

+0.3

V

Input Low Voltage V

IL

–0.3 — 0.8 V

Ambient Temperature,

Commercial Range

T

Ac 0—70

o

C

Ambient Temperature,

Industrial Range

T

A

I

–40 — 85

o

C

Capacitance

Parameter Symbol Test Condition Max Unit

Input Capacitance CIN VIN = 0 V 5 pF

Output Capacitance C

OUT

V

OUT

= 0 V 7 pF

Rev: 1.03b 10/2002 4/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

DC I/O Pin Characteristics

Parameter Symbol Test Conditions Min Max

Input Leakage

Current

IIL

VIN = 0 to V

DD

– 1 uA 1 uA

Output Leakage

Current

I

LO

Output High Z

V

OUT = 0 to V

DD

–1 uA 1 uA

Output High Voltage V

OH

I

OH

= –4mA 2.4 —

Output Low Voltage V

OL

I

LO

= +4mA — 0.4 V

Power Supply Currents

Parameter Symbol Test Conditions

0 to 70°C –40 to 85°C

7 ns 8 ns 10 ns 12 ns 7 ns 8 ns 10 ns 12 ns

Operating

Supply

Current

I

DD

CE ≤ V

IL

All other inputs

≥ V

IH

or ≤ V

IL

Min. cycle time

I

OUT

= 0 mA

135 mA 120 mA 95 mA 85 mA 145 mA 130 mA 105 mA 95 mA

Standby

Current

I

SB1

CE ≥ VIH

All other inputs

≥ V

IH or ≤VIL

Min. cycle time

35 mA 30 mA 25 mA 22 mA 45 mA 40 mA 35 mA 32 mA

Standby

Current

I

SB2

CE ≥ VDD - 0.2V

All other inputs

≥ V

DD - 0.2V or ≤

0.2V

10 mA 20 mA

Rev: 1.03b 10/2002 5/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

AC Test Conditions

AC Characteristics

* These parameters are sampled and are not 100% tested.

Read Cycle

Parameter Symbol

-7 -8 -10 -12
Unit

Min Max Min Max Min Max Min Max

Read cycle time t

RC 7 — 8 — 10 — 12 — ns

Address access time t

AA — 7 — 8 — 10 — 12 ns

Chip enable access time (CE

)tAC— 7 — 8 — 10 — 12 ns

Output enable to output valid (OE

)tOE —3—3.5— 4 — 5 ns

Output hold from address change t

OH 3—3—3—3—ns

Chip enable to output in low Z (CE

)

t

LZ

*

3—3—3—3—ns

Output enable to output in low Z (OE

)

t

OLZ

*

0—0—0—0—ns

Chip disable to output in High Z (CE

)

t

HZ

*

—3.5—4—5—6 ns

Output disable to output in High Z (OE

)

t

OHZ

*

—3—3.5— 4 — 5 ns

DQ

VT = 1.4 V

50Ω

30pF

1

DQ

3.3 V

Output Load 1

Output Load 2

589Ω

434Ω

5pF

1

Notes:

1. Include scope and jig capacitance.

2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.

3. Output load 2 for t

LZ, tHZ, tOLZ and tOHZ

Parameter Conditions

Input high level VIH = 2.4 V

Input low level V

IL

= 0.4 V

Input rise time tr = 1 V/ns

Input fall time tf = 1 V/ns

Input reference level 1.4 V

Output reference level 1.4 V

Output load Fig. 1& 2

Rev: 1.03b 10/2002 6/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

Read Cycle 1: CE = OE = VIL, WE = V

IH

Read Cycle 2: WE = V

IH

tAA

t

OH

t

RC

Address

Data Out Previous Data Data valid

t

AA

t

RC

Address

t

AC

t

LZ

t

OE

t

OLZ

CE

OE

Data Out

tHZ

t

OHZ

D

ATA VALID

High impedance

Rev: 1.03b 10/2002 7/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

* These parameters are sampled and are not 100% tested.

Write Cycle

Parameter Symbol

-7 -8 -10 -12
Unit

Min Max Min Max Min Max Min Max

Write cycle time tWC 7 — 8 — 10 — 12 — ns

Address valid to end of write tAW 5 — 5.5 — 7 — 8 — ns

Chip enable to end of write tCW 5 — 5.5 — 7 — 8 — ns

Data set up time tDW 3.5 — 4 — 5 — 6 — ns

Data hold time tDH 0 — 0 — 0 — 0 — ns

Write pulse width tWP 5 — 5.5 — 7 — 8 — ns

Address set up time tAS 0 — 0 — 0 — 0 — ns

Write recovery time (WE

) tWR 0—0—0—0—ns

Write recovery time (CE

) tWR10—0—0—0—ns

Output Low Z from end of write

tWLZ

*

3—3—3—3—ns

Write to output in High Z

tWHZ

*

—3—3.5—4—5 ns

Rev: 1.03b 10/2002 8/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

Write Cycle 1: WE control

Write Cycle 2: CE control

t

WC

Address

CE

WE

Data In

OE

Data Out

tAW

tCW

t

AS

t

WP

tWR

t

DW

t

DH

tWLZtWHZ

D

ATA VALID

H

IGH IMPEDANCE

tWC

Address

CE

WE

Data In

OE

Data Out

t

AW

tWP

tAS tCW

t

WR1

t

DW

t

DH

D

ATA VALID

H

IGH IMPEDANCE

Rev: 1.03b 10/2002 9/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

32-Pin SOJ, 400 mil

1

e

B1

D

A1

A2

y

E

H

E

Q

c

L

G

E

Detail A

A

B

A

Notes:

1. Dimension D& E do not include interlead flash.

2. Dimension B1 does not include dambar protrusion/intrusion.

3. Controlling dimension: inches

Symbol

Dimension in inch Dimension in mm

min nom max min nom max

A — — 0.146 — — 3.70

A1 0.026 — — 0.66 — —

A2 0.105 0.110 0.115 2.67 2.80 2.92

B 0.013 0.017 0.021 0.33 0.43 0.53

B1 0.024 0.028 0.032 0.61 0.71 0.81

c 0.006 0.008 0.012 0.15 0.20 0.30

D 0.820 0.824 0.829 20.83 20.93 21.06

E 0.395 0.400 0.405 10.04 10.16 10.28

e — 0.05 — — 1.27 —

H

E

0.430 0.435 0.440 10.93 11.05 11.17

G

E 0.354 0.366 0.378 9.00 9.30 9.60

L 0.082 — — 2.08 — —

y — — 0.004 — — 0.10

Q

0

o

—

10

o

0

o

—

10

o

Rev: 1.03b 10/2002 10/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

44-Pin, 400 mil TSOP-II

D

122

2344

e

B

Q

A

A1

A2

y

c

Detail A

E

H

E

L

L1

A

Notes:

1. Dimension D& E do not include interlead flash.

2. Dimension B does not include dambar protrusion/intrusion.

3. Controlling dimension: mm

Symbol

Dimension in inch Dimension in mm

min nom max min nom max

A — — 0.047 — — 1.20

A1 0.002 — — 0.05 — —

A2 0.037 0.039 0.041 0.95 1.00 1.05

B 0.01 0.014 0.018 0.25 0.35 0.45

c — 0.006 — — 0.15 —

D 0.721 0.725 0.729 18.31 18.41 18.51

E 0.396 0.400 0.404 10.06 10.16 10.26

e — 0.031 — — 0.80 —

H

E

0.455 0.463 0.471 11.56 11.76 11.96

L 0.016 0.020 0.024 0.40 0.50 0.60

L1 — 0.031 — — 0.80 —

y — — 0.004 — — 0.10

Q

0

o

—

5

o

0

o

—

5

o

Rev: 1.03b 10/2002 11/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

*

Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. For example:

GS74104ATP-8T

Ordering Information

Part Number

*

Package Access Time Temp. Range Status

GS74104ATP-7 400 mil TSOP-II 7 ns Commercial

GS74104ATP-8 400 mil TSOP-II 8 ns Commercial

GS74104ATP-10 400 mil TSOP-II 10 ns Commercial

GS74104ATP-12 400 mil TSOP-II 12 ns Commercial

GS74104ATP-7I 400 mil TSOP-II 7 ns Industrial

GS74104ATP-8I 400 mil TSOP-II 8 ns Industrial

GS74104ATP-10I 400 mil TSOP-II 10 ns Industrial

GS74104ATP-12I 400 mil TSOP-II 12 ns Industrial

GS74104AJ-7 400 mil SOJ 7 ns Commercial

GS74104AJ-8 400 mil SOJ 8 ns Commercial

GS74104AJ-10 400 mil SOJ 10 ns Commercial

GS74104AJ-12 400 mil SOJ 12 ns Commercial

GS74104AJ-7I 400 mil SOJ 7 ns Industrial

GS74104AJ-8I 400 mil SOJ 8 ns Industrial

GS74104AJ-10I 400 mil SOJ 10 ns Industrial

GS74104AJ-12I 400 mil SOJ 12 ns Industrial

Rev: 1.03b 10/2002 12/12 © 2001, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74104ATP/J

4Mb Asynchronous Datasheet Revision History

Rev. Code: Old;

New

Types of Changes
Format or Content

Page #/Revisions/Reason

74104A_r1 Content/Format

• Created new datasheet

74104A_r1; 74104A_r1_01 Content

• Added 6 ns speed bin

• Updated all power numbers

74104A_r1_01; 74104A_r1_02 Content

• Updated Recommended Operating Currents on page 3

• Added 7 ns bin to entire document

• Add X package

74104A_r1_02; 74104A_r1_03 Content

• Removed 6 ns speed bin from entire document

• Removed all references to “X” package