Page 1
GPTR4180
PHASE CONTROLLED SCR
High reliability operation
DC power supply
AC drives
VOLTAGE UP TO 3600 V
AVERAGE CURRENT 1800 A
SURGE CURRENT 20 kA
BLOCKING CHARACTERISTICS
Characteristic Conditions
VRRM
Repetitive peak reverse voltage 3600 V
VRSM
Non-repetitive peak reverse voltage 3700 V
VDRM
Repetitive peak off-state voltage 3600 V
IDRM
Repetitive peak off-state current, max.
VDRM, single phase, half wave, Tj = Tjmax
70 mA
I
RRM
Repetitive peak reverse current, max.
V
RRM
, single phase, half wave, Tj = Tjmax
70 mA
ON-STATE CHARACTERISTICS
IT(AV)
Average on-state current Sine wave,180° conduction, Th = 55 °C 1800 A
IT(RMS)
R.M.S. on-state current Sine wave,180° conduction, Th = 55 °C 2827 A
ITSM
Surge on-state current
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
20 kA
I²t I² t for fusing coordination 2000 kA²s
VT(TO)
Threshold voltage
Tj = Tjmax
1,32 V
r
T
On-state slope resistance
Tj = Tjmax
0,34
m
Ω
VTM
Peak on-state voltage, max
On-state current IT =
4100 A , Tj = 25 °C 2,90 V
IH
Holding current, max
Tj = 25 °C
mA
I
L
Latching current, typ
Tj = 25 °C
mA
TRIGGERING CHARACTERISTICS
VGT
Gate trigger voltage
Tj = 25 °C, VD = 5 V
3 V
IGT
Gate trigger current
Tj = 25 °C, VD = 5 V
500 mA
VGD
Non-trigger voltage
VD = 67% VRRM, Tj = Tjmax
V
PGM
Peak gate power dissipation Pulse width 0.5 ms W
PG(AV)
Average gate power dissipation W
IFGM
Peak gate current A
VFGM
Peak gate voltage (forward) V
V
RGM
Peak gate voltage (reverse) V
SWITCHING CHARACTERISTICS
di/dt Critical rate of rise of on-state current
Tj = Tjmax
100 A/µs
dV/dt Critical rate of rise of off-state voltage
Tj = Tjmax
1000 V/µs
tq
Turn-off time, typ
Tj = Tjmax, IT = 800 A, di/dt = -12.5 A/µs
400 µs
VR = 100 V, VD = 67% VDRM,
dV/dt = 20 V/µs
THERMAL AND MECHANICAL CHARACTERISTICS
Rth(j-c)
Thermal resistance (junction to case) Double side cooled 0,012 °C/W
Rth(c-h)
Thermal resistance (case to heatsink) Double side cooled 0,001 °C/W
Tjmax
Max operating junction temperature 125 °C
Tstg
Storage temperature -40 / 125 °C
F Clamping force ± 10% 30 kN
Mass 1,5 g
Document GPTR4180T001
Value
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
Phone: +39-010-667 1307
Fax: +39-010-667 2459
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
Page 2
PHASE CONTROLLED SCR GPTR4180
Document GPTR4180T001
Maximum surge current
d.s. cooled
0
5
10
15
20
25
1 10 100
Number of cycle current pulses [n]
I
TSM
[A]
On-state voltage drop
0
500
1000
1500
2000
2500
3000
3500
4000
0 0,5 1 1,5 2 2,5 3
VT [V]
I
T
[A]
Tj=T
jmax
Green Power
Semiconductors
Thermal impedance (j-c)
0
0,002
0,004
0,006
0,008
0,01
0,012
0,014
0,001 0,01 0,1 1 10 100
Time [s]
Z
TH(j-c)
[°C / W]
Current rating - sine wave
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000
IT [A]
Heatsink temperature [°C]
180°
90° 120°
60°
30°
Power loss - sine wave
0
1000
2000
3000
4000
5000
6000
0 400 800 1200 1600 2000
IT[A]
P
F
[W]
180°
120°
90°
60°
30°
In the interest of product improvement Green Power Semiconductors reserves the right to change any specification given in this data
sheet without notice.
On-state voltage drop
0
500
1000
1500
2000
2500
3000
3500
4000
0 0,5 1 1,5 2 2,5 3
VT [V]
I
T
[A]
Tj=T
jmax
Loading...