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Phone: +39-010-667 1307
Fax: +39-010-667 2459
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
GPTR3190
PHASE CONTROLLED SCR
High reliability operation
DC power supply
AC drives
VOLTAGE UP TO 2400 V
AVERAGE CURRENT 1900 A
SURGE CURRENT 22 kA
BLOCKING CHARACTERISTICS
Characteristic Conditions
RRM
V
V
V
DRM
I
RRM
I
RSM
DRM
Repetitive peak reverse voltage 2400 V
Non-repetitive peak reverse voltage 2500 V
Repetitive peak off-state voltage 2400 V
DRM
, single phase, half wave, Tj = Tjmax
Repetitive peak off-state current, max.
Repetitive peak reverse current, max.
V
RRM
, single phase, half wave, Tj = Tjmax
V
ON-STATE CHARACTERISTICS
T(AV)
I
T(RMS)
I
TSM
I
Average on-state current Sine wave,180° conduction, Th = 55 °C 1900 A
R.M.S. on-state current Sine wave,180° conduction, Th = 55 °C 2984 A
Surge on-state current
Non rep. half sine wave, 50 Hz, V
R
= 0 V, Tj = T
jmax
I²t I² t for fusing coordination 2420 kA²s
V
r
V
H
I
L
I
T(TO)
T
TM
Threshold voltage
On-state slope resistance
Peak on-state voltage, max
Holding current, max
Latching current, typ
j
jmax
= T
T
j
jmax
= T
T
On-state current I
j
= 25 °C
T
j
= 25 °C
T
T
5000 A , Tj = 25 °C 2,15 V
TRIGGERING CHARACTERISTICS
V
GT
I
V
P
P
FGM
I
V
V
GT
GD
GM
G(AV)
FGM
RGM
Gate trigger voltage
Gate trigger current
Non-trigger voltage
Peak gate power dissipation Pulse width 0.5 ms W
Average gate power dissipation W
Peak gate current A
Peak gate voltage (forward) V
Peak gate voltage (reverse) V
j
= 25 °C, VD = 5 V
T
j
= 25 °C, VD = 5 V
T
D
= 67% V
V
RRM
, Tj = T
jmax
SWITCHING CHARACTERISTICS
j
jmax
= T
di/dt Critical rate of rise of on-state current
dV/dt Critical rate of rise of off-state voltage
q
t
Turn-off time, typ
T
j
jmax
T
= T
j
jmax
= T
T
, IT = 800 A, di/dt = -12.5 A/µs
VR = 100 V, VD = 67% VDRM, dV/dt = 20 V/µs
Value
70 mA
70 mA
22 kA
1,04 V
0,23 m
1000 V/µs
Ω
mA
mA
3V
400 mA
V
200 A/µs
400 µs
THERMAL AND MECHANICAL CHARACTERISTICS
th(j-c)
R
th(c-h)
R
jmax
T
stg
T
F Clamping force ± 10% 30 kN
Document GPTR3190T001
Thermal resistance (junction to case) Double side cooled 0,016 °C/W
Thermal resistance (case to heatsink) Double side cooled 0,001 °C/W
Max operating junction temperature 125 °C
Storage temperature -40 / 125 °C
Mass 1,4 g
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Maximum surge current
Green Power
30°
120°
60°
Semiconductors
PHASE CONTROLLED SCR GPTR3190
Current rating - sine wave
130
120
110
100
90
80
70
60
Heatsink temperature [°C]
50
60°
90° 120°
0 500 1000 1500 2000
IT [A]
d.s. cooled
25
20
15
[A]
TSM
10
I
5
0
1 10 100
Number of cycle current pulses [n]
180°
Power loss - sine wave
4500
4000
3500
3000
2500
[W]
F
2000
P
1500
30°
90°
1000
500
0
0 500 1000 1500 2000
IT[A]
On-state voltage drop
On-state voltage drop
4000
4000
3500
3500
3000
3000
2500
2500
2000
[A]
2000
[A]
T
I
T
I
1500
1500
1000
1000
500
500
0
0
0 0,5 1 1,5 2 2,5
0 0,5 1 1,5 2 2,5
Tj=T
VT [V]
VT [V]
Tj=T
jmax
jmax
180°
Thermal impedance (j-c)
0,018
0,016
0,014
0,012
0,01
[°C / W]
0,008
0,006
TH(j-c)
Z
0,004
0,002
0
0,001 0,01 0,1 1 10 100
Time [s]
In the interest of product improvement Green Power Semiconductors reserves the right to change any specification given in this data
sheet without notice.
Document GPTR3190T001
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