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GPTG2033
PHASE CONTROLLED SCR
High reliability operation
DC power supply
AC drives
VOLTAGE UP TO 1600 V
AVERAGE CURRENT 335 A
SURGE CURRENT 5,2 kA
BLOCKING CHARACTERISTICS
Characteristic Conditions
VRRM
Repetitive peak reverse voltage 1600 V
VRSM
Non-repetitive peak reverse voltage 1700 V
VDRM
Repetitive peak off-state voltage 1600 V
IDRM
Repetitive peak off-state current, max.
VDRM, single phase, half wave, Tj = Tjmax
30 mA
I
RRM
Repetitive peak reverse current, max.
V
RRM
, single phase, half wave, Tj = Tjmax
30 mA
ON-STATE CHARACTERISTICS
IT(AV)
Average on-state current Sine wave,180° conduction, Th = 55 °C 335 A
IT(RMS)
R.M.S. on-state current Sine wave,180° conduction, Th = 55 °C 526 A
ITSM
Surge on-state current
Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax
5,2 kA
I²t I² t for fusing coordination 135 kA²s
VT(TO)
Threshold voltage
Tj = Tjmax
0,91 V
r
T
On-state slope resistance
Tj = Tjmax
0,85
m
Ω
VTM
Peak on-state voltage, max
On-state current IT =
1000 A , Tj = 25 °C 1,75 V
IH
Holding current, max
Tj = 25 °C
mA
I
L
Latching current, typ
Tj = 25 °C
mA
TRIGGERING CHARACTERISTICS
VGT
Gate trigger voltage Tj = 25 °C, VD = 12 V 2 V
IGT
Gate trigger current Tj = 25 °C, VD = 12 V 200 mA
VGD
Non-trigger voltage VD = 67% VRRM, Tj = Tjmax 0,15 V
PGM
Peak gate power dissipation Pulse width 0.5 ms 100 W
PG(AV)
Average gate power dissipation 5 W
IFGM
Peak gate current 20 A
VFGM
Peak gate voltage (forward) 10 V
V
RGM
Peak gate voltage (reverse) 3 V
SWITCHING CHARACTERISTICS
di/dt Critical rate of rise of on-state current Tj = Tjmax 200 A/µs
dV/dt Critical rate of rise of off-state voltage Tj = Tjmax 1000 V/µs
tq
Turn-off time, typ Tj = Tjmax, IT = 320 A, di/dt = -12.5 A/µs 200 µs
VR = 100 V, VD = 67% VDRM, dV/dt = 20 V/µs
THERMAL AND MECHANICAL CHARACTERISTICS
Rth(j-c)
Thermal resistance (junction to case) Double side cooled 0,07 °C/W
Rth(c-h)
Thermal resistance (case to heatsink) Double side cooled 0,06 °C/W
Tjmax
Max operating junction temperature 125 °C
Tstg
Storage temperature -40 / 125 °C
F Clamping force ± 10% 5 kN
Mass 70 g
Document GPTG2033T001
Value
GPS - Green Power Semiconductors SPA
Factory: Via Ungaretti 10, 16157 Genova, Italy
Phone: +39-010-667 1307
Fax: +39-010-667 2459
Web: www.gpsemi.it
E-mail: info@gpsemi.it
Green Power
Semiconductors
Page 2
PHASE CONTROLLED SCR GPTG2033
Document GPTG2033T001
Maximum surge current
d.s. cooled
0
1
2
3
4
5
6
1 10 100
Number of cycle current pulses [n]
I
TSM
[A]
On-state voltage drop
0
100
200
300
400
500
600
700
800
0 0,5 1 1,5 2
VT [V]
I
T
[A]
Tj=T
jmax
Green Power
Semiconductors
Thermal impedance (j-c)
0
0,01
0,02
0,03
0,04
0,05
0,06
0,07
0,08
0,001 0,01 0,1 1 10 100
Time [s]
Z
TH(j-c)
[°C / W]
Current rating - sine wave
50
60
70
80
90
100
110
120
130
0 100 200 300
IT [A]
Heatsink temperature [°C]
180
90° 120°60°
30°
Power loss - sine wave
0
100
200
300
400
500
600
0 100 200 300
IT[A]
P
F
[W]
180°
1209060°
30
In the interest of product improvement Green Power Semiconductors reserves the right to change any specification given in this data
sheet without notice.
On-state voltage drop
0
100
200
300
400
500
600
700
800
0 0,5 1 1,5 2
VT [V]
I
T
[A]
Tj=T
jmax
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