Datasheet GP400LSS18 Datasheet (DYNEX)

GP400LSS18

Single Switch IGBT Module

DS5305-2.0 November 2000

FEATURES

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

■ 400A Per Module

APPLICATIONS

■ High Power Inverters

■ Motor Controllers

■ Induction Heating

■ Resonant Converters

The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP400LSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

KEY PARAMETERS V V I

C

I

C(PK)

CES CE(sat)

(typ) 3.5V (max) 400A (max) 800A

5(E1)

1

3(G

)

Fig. 1 Single switch circuit diagram

1800V

2(E)

1(C)

4(C1)

The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

4

12

ORDERING INFORMATION

Order As:

5

3

GP400LSS18

Note: When ordering, please use the whole part number.

Outline type code: L

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11

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GP400LSS18

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-h)

Thermal resistance - transistor

Thermal resistance - diode

Thermal resistance - case to heatsink (per module)

Parameter

Test Conditions

= 0V

V

GE

-

DC, T

1ms, T

T

= 75˚C

case

= 80˚C

case

= 25˚C (Transistor), Tj = 150˚C

case

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

DC junction to case

Mounting torque 5Nm

Min.

-

Max.

1800

±20

400

800

2980

4000

Max.

40

70

15

Units

V

A

W

V

Units

˚C/kW

(with mounting grease)

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

Electrical connections - M4

-

–40

-

150

125

5

2

˚C

Nm

2/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP400LSS18

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 40mA, VGE = V

I

C

CES

, T

CE

VGE = 15V, IC = 400A

= 15V, IC = 400A, T

V

GE

DC

= 1ms

t

p

= 4000A, T

I

F

= 400A, T

I

F

V

= 25V, VGE = 0V, f = 1MHz

CE

case

= 125˚C

case

= 80˚C

-

= 125˚C

case

= 125˚C

case

Min.

-

4

-

Typ.

-

3.5

4.3

-

2.2

2.3

45

15

Max.

1

10

±2

7.5

4.0

5.0

400

800

2.5

2.6

-

Units

mA

µA

V

A

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11

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GP400LSS18

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

T

= 25˚C unless stated otherwise.

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

Symbol

t

d(off)

t

f

Turn-off delay time

Fall time

Parameter

Test Conditions

= 400A

I

C

= ±15V

V

GE

= 900V

V

CE

R

G(ON)

= R

G(OFF)

= 4.7Ω

L ~ 100nH

IF = 400A, VR = 900V,

dI

/dt = 2500A/µs

F

Test Conditions

= 400A

I

C

= ±15V

V

GE

Min.

-

Min.

-

Typ.

800

100

650

200

100

80

Typ.

900

150

Max.

900

130

750

300

150

100

Max.

1100

200

Units

ns

mJ

ns

mJ

µC

Units

ns

120

E

t

E

OFF

d(on)

t

ON

Q

= 900V

R

G(ON)

V

CE

= R

G(OFF)

L ~ 100nH

= 4.7Ω

Turn-off energy loss

Turn-on delay time

r

Rise time

Turn-on energy loss

Diode reverse recovery charge

rr

IF = 400A, VR = 900V,

dI

/dt = 2500A/µs

F

-

900

-

250

-

170

-

130

-

150

1100

300

210

160

mJ

ns

mJ

µC

4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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TYPICAL CHARACTERISTICS

GP400LSS18

Vge = 20/15/12V

800

Common emitter

= 25˚C

T

case

700

600

- (A)

500

c

400

300

Collector current, I

200

100

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

Collector-emitter voltage, V

ce

- (V)

Fig.3 Typical output characteristics Fig.4 Typical output characteristics

V

= 10V

ge

Vge = 20/15/12V

800

Common emitter

= 125˚C

T

case

700

600

- (A)

500

C

400

300

Collector current, I

200

100

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Collector-emitter voltage, V

ce

- (V)

Vge = 10V

350

300

250

- (mJ)

ON

200

150

T

case

V

GE

V

CE

= 25˚C = ±15V = 900V

A

350

300

250

- (mJ)

ON

200

150

T

case

V

GE

V

CE

= 125˚C = ±15V = 900V

B

100

Turn-on energy, E

100

Turn-on energy, E

C

50

0

0 40050 100

A: Rg = 13Ω B: R C: R

150 200 250 300 350

Collector current, I

- (A)

C

= 6.8Ω

g

= 4.7Ω

g

50

0

0 40050 100

150 200 250 300 350

Collector current, I

- (A)

C

Fig.5 Typical turn-on energy vs collector current Fig.6 Typical turn-on energy vs collector current

A: Rg = 13Ω B: R

= 6.8Ω

g

C: R

= 4.7Ω

g

A

B

C

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/11

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GP400LSS18

150

T

= 25˚C

case

V

= ±15V

GE

V

= 900V

CE

125

100

- (mJ)

OFF

75

50

Turn-off energy, E

25

0

0 400100 200

Collector current, I

250 35030015050

C

- (A)

A: Rg = 13Ω B: R

= 6.8Ω

g

C: R

= 4.7Ω

g

A B

C

240

T

= 125˚C

case

V

= ±15V

GE

VCE = 900V

200

160

- (mJ)

OFF

120

80

Turn-off energy, E

40

0

0 400100 200

Collector current, I

250 35030015050

C

A: Rg = 13Ω B: Rg = 6.8Ω C: R

- (A)

Fig.7 Typical turn-off energy vs collector current Fig.8 Typical turn-off energy vs collector current

= 4.7Ω

g

A B

C

75 70 65 60 55

- (mJ)

V

GE

V

CE

= ±15V = 900V

T

case

= 125˚C

2500

2000

T

case

V

= ±15V

GE

V

= 800V

CE

= 4.7Ω

R

t

f

g

50 45

off(diode)

40 35

30

T

case

= 25˚C

- (ns)

1500

s

1000

t

d(off)

25 20 15

Diode turn-off energy, E

Switching times, t

500

t

d(on)

10

5

t

0

50 100 150 200 250 300 350 400

Collector current, I

- (A)

T

r

0

0 30010050 200150 250

Collector current, I

- (A)

C

Fig.9 Typical diode reverse recovery charge vs collector current Fig.10 Typical switching characteristics

= 125˚C

350 400

6/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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GP400LSS18

800

700

Tj = 25˚C

1000

900

800

600

700

500

- (A)

F

400

300

Foward current, I

200

100

0

0.5 1.0 1.5

2.0

Foward voltage, V

Tj = 125˚C

2.5 3.0 3.5

- (V)

F

- (A)

C

600

500

400

Collector current, I

300

T

= 125˚C

case

200

V

= ±15V

ge

= 4.7Ω

R

g(min)

100

: Minimum recommended value

R

g(min)

0

0 400 800

1200

Collector-emitter voltage, V

Fig.11 Diode typical forward characteristics Fig.12 Reverse bias safe operating area

ce

- (V)

1600

2000

10000

IC max. (single pulse)

1000

- (A)

C

I

C

100

max. DC (continuous)

Collector current, I

10

1

1 10 100 1000 10000

Collector-emitter voltage, V

ce

- (V)

Fig.13 Forward bias safe operating area Fig.14 Transient thermal impedance

50

100µs

t

= 1ms

p

µs

100

Diode

- (°C/kW )

th (j-c)

10

1

Transient thermal impedance, Z

0.1 1 10 1000100

Pulse width, t

- (ms)

p

Transistor

10000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/11

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GP400LSS18

900

800

PWM Sine Wave Power Factor = 0.9, Modulation Index =1

700

600

700

- (A)

600

C(PK)

500

400

500

- (A)

C

400

300

200

DC collector current, I

Inverter phase current, I

200

Conditions: T

= 125˚C, T

100

j

= 4.7Ω, VCC = 900V

R

g

0

11020

case

= 75˚C

f

max

- (kHz)

100

0

0 20 40 60 80 100 120 140 160

Case temperature, T

case

Fig.15 3-Phase inverter operating frequency Fig.16 DC current rating vs case temperature

- (˚C)

8/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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GP400LSS18

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.

4x Ø6.5

48

61.4

3x M4

23

40

46.5

3.5x6

4

5

24

5

27

3

20

2x M6

6x5.5

2

106.4

46.5 16

1

20

29

36max

Nominal weight: 270g

Recommeded fixings for mounting: M6

Recommended mounting torque: 5Nm (44lbs.ins)

Recommended torque for electrical connections (M4): 2Nm (17lbs.ins)

Module outline type code: L

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/11

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GP400LSS18

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.

10/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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GP400LSS18

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550

DYNEX POWER INC.

Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

SALES OFFICES

Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /

Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020

These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5305-2 Issue No. 2.0 November 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/11

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