Datasheet GP400DDS18 Datasheet (DYNEX)

GP400DDS18

GP400DDS18

Dual Switch IGBT Module

Preliminary Information

DS5359-2.0 January 2001

FEATURES

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

APPLICATIONS

■ High Power Inverters

■ Motor Controllers

■ Induction Heating

■ Resonant Converters

The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.

The GP400DDS18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.

The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.

KEY PARAMETERS
V
V
I

C

I

C(PK)

CES
CE(sat)

(typ) 3.5V
(max) 400A
(max) 1600A

2

12(C

)

2(C

)

2

1

7(C

)

Fig. 1 Dual switch circuit diagram

5

1800V

4(E2)

1(E1)

11(G
10(E2)

3(C1)

1

5(E

1

6(G

2

)

)
)

6

ORDERING INFORMATION

Order As:

7

8

13

GP400DDS18

Note: When ordering, please use the whole part number.

12

9

24

11

10

Outline type code: D

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

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GP400DDS18

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T

= 25˚C unless stated otherwise

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Parameter

Test Conditions

= 0V

V

GE

-

= 65˚C

T

case

1ms, T

T

case

= 105˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

-

Max.

1800

±20

400

800

3000

4000

Max.

42

80

Units

V

V

A

A

W

V

Units

˚C/kW

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

˚C/kW

8

(with mounting grease)

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

Electrical connections - M4

Electrical connections - M8

-

-

–40

-

-

-

150

125

125

5

2

10

˚C

˚C

˚C

Nm

Nm

Nm

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP400DDS18

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 20mA, VGE = V

I

C

CES

CES

, T

CE

VGE = 15V, IC = 400A

= 15V, IC = 400A, , T

V

GE

DC

= 1ms

t

p

= 400A

I

F

= 400A, T

I

F

= 25V, VGE = 0V, f = 1MHz

V

CE

= 125˚C

case

-

= 125˚C

case

case

= 125˚C

Min.

-

-

-

4.5

-

-

-

-

-

-

-

-

Typ.

-

-

-

5.5

3.5

4.3

400

800

2.2

2.3

45

20

Max.

1

12

2

6.5

4

5

-

-

2.5

2.6

-

-

Units

mA

mA

µA

V

V

V

A

A

V

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

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GP400DDS18

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

rr

I

rr

E

REC

T

= 125˚C unless stated otherwise

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

Diode reverse current

Diode reverse recovery energy

Symbol

Parameter

Parameter

Test Conditions

= 400A

I

C

= ±15V

V

GE

= 900V

V

CE

R

G(ON)

= R

G(OFF)

= 2.2Ω

L ~ 100nH

= 400A, VR = 50% V

I

F

/dt = 3000A/µs

dI

F

Test Conditions

CES

Min.

,

Min.

Typ.

900

-

280

-

-

-

-

-

-

-

-

80

500

200

140

80

250

70

Typ.

Max.

1100

350

100

650

400

180

100

Max.

Units

ns

ns

mJ

ns

ns

mJ

µC

-

-

A

mJ

Units

E

E

t

t

E

d(off)

d(on)

Q

I

REC

t

f

OFF

t

r

ON

rr

= 400A

R

G(ON)

I

C

= ±15V

V

GE

= 900V

V

CE

= R

G(OFF)

L ~ 100nH

= 2.2Ω

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

rr

Diode reverse recovery charge

Diode reverse current

IF = 400A, VR = 50% V

/dt = 2500A/µs

dI

F

CES

,

Diode reverse recovery energy

1010

-

390

-

100

-

660

-

310

-

200

-

110

-

300

-

-

70

1200

500

150

800

400

270

150

-

-

ns

ns

mJ

ns

ns

mJ

µC

A

mJ

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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TYPICAL CHARACTERISTICS

GP400DDS18

Vge = 20/15/12V

800

Common emitter
T

= 25˚C

case

700

600

- (A)

500

c

400

300

Collector current, I

200

100

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

Collector-emitter voltage, V

ce

- (V)

Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics

V

= 10V

ge

Vge = 20/15/12V

800

Common emitter

= 125˚C

T

case

700

600

- (A)

500

C

400

300

Collector current, I

200

100

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Collector-emitter voltage, V

ce

- (V)

Vge = 10V

400

360

320

280

- (mJ)

240

ON

200

160

T

case

V

GE

V

CE

= 25˚C
= ±15V
= 900V

A

B

C

300
280
260
240
220
200

- (mJ)

180

ON

160
140
120

T

case

V
V

= 125˚C

= ±15V

GE

= 900V

CE

100

120

Turn-on energy, E

80

40

0

040050 100

A: Rg = 4.7Ω
B: R
C: R

150 200 250 300 350

Collector current, I

- (A)

C

= 3.3Ω

g

= 2.2Ω

g

Turn-on energy, E

80
60
40
20

0

040050 100

150 200 250 300

Collector current, I

- (A)

C

A: Rg = 4.7Ω
B: R
C: R

Fig. 5 Typical turn-off energy vs collector current Fig. 6 Typical turn-off energy vs collector current

= 3.3Ω

g

= 2.2Ω

g

350

A

B

C

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10

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GP400DDS18

150

125

T

case

V

GE

V

CE

= 25˚C
= ±15V
= 900V

150

125

T

case

V

GE

V

CE

= 125˚C

= ±15V

= 900V

A

100

- (mJ)

OFF

75

50

Turn-off energy, E

25

0

0400100 200

Collector current, I

250 35030015050

C

- (A)

A: Rg = 13Ω
B: R

= 6.8Ω

g

= 2.2Ω

C: R

g

B

C

100

- (mJ)

OFF

75

50

Turn-off energy, E

25

0

0400100 200

Collector current, I

250 35030015050

C

A: Rg = 13Ω
B: R
C: R

- (A)

Fig. 7 Typical turn-off energy vs collector current Fig. 8 Typical turn-off energy vs collector current

= 6.8Ω

g

= 2.2Ω

g

A

B

C

60

= ±15V

V

GE

= 900V

V

CE

R

= 2.2Ω

g

50

T

case

= 125˚C

- (mJ)

40

off(diode)

T

30

case

= 25˚C

20

Diode turn-off energy, E

10

0

0 50 100 150 200 250 300 350 400

Collector current, I

C

- (A)

Fig. 9 Typical diode turn-off energy vs collector current

1400

T

= 125˚C

case

= ±15V

V

GE

= 900V

V

800

600

400

CE

= 2.2Ω

R

g

t

d(off)

t

d(on)

t

t

f

r

1200

1000

- (ns)

s

Switching times, t

200

0

030010050 200150 250

Collector current, I

Fig. 10 Typical switching times

- (A)

C

350

400

6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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800

0

100

200

300

400

500

600

700

800

900

1000

0 400 800

1200

1600

2000

Collector-emitter voltage, V

ce

- (V)

Collector current, I

C

- (A)

T

case

= 125˚C

V

ge

= ±15V

R

g(min)

= 4.3Ω

R

g(min)

: Minimum recommended value

GP400DDS18

700

Tj = 25˚C

600

500

- (A)

F

400

300

Foward current, I

200

100

0

0

0.5 1.0 1.5

2.0

Foward voltage, V

Fig. 11 Diode typical forward characteristics

10000

Tj = 125˚C

2.5 3.0 3.5

- (V)

F

Fig. 12 Reverse bias safe operating area

100

IC max. (single pulse)

1000

- (A)

C

I

C

100

ma

x. DC (continuous)

Collector current, I

10

1

1 10 100 1000 10000

Collector-emitter voltage, V

ce

- (V)

Fig. 13 Forward bias safe operating area

50

100µs

t

= 1ms

p

µs

- (°C/kW )

th (j-c)

10

1

Transient thermal impedance, Z

0.1
1 10 1000100

Pulse width, t

Fig.14 Transient thermal impedance

Diode

- (ms)

p

Transistor

10000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10

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GP400DDS18

900

800

PWM Sine Wave
Power Factor = 0.9,
Modulation Index =1

700

600

700

- (A)

600

C(PK)

500

400

500

- (A)

C

400

300

300

200

DC collector current, I

Inverter phase current, I

200

Conditions:
T

= 125˚C, T

100

j

= 4.3Ω, VCC = 900V

R

g

0

11020

case

= 75˚C

f

max

- (kHz)

Fig.15 3-Phase inverter operating frequency

100

0

0 20 40 60 80 100 120 140 160

Case temperature, T

Fig.16 DC current rating vs case temperature

case

- (˚C)

8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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GP400DDS18

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

13

24

16

18

26

13

6x M4

12

7

14

11

9

10

11.5

62

15

15

5

6

8

35

20

62

65

13

24

4x M8

57

43.3 11.85
57

6x Ø7

65

38

28

5

140

Nominal weight: 1600g

Module outline type code: D

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10

31.5

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GP400DDS18

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Electrostatic handling precautions AN4502
An introduction to IGBTs AN4503
IGBT ratings and characteristics AN4504
Heatsink requirements for IGBT modules AN4505
Calculating the junction temperature of power semiconductors AN4506
Gate drive considerations to maximise IGBT efficiency AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508
Guidance notes for formulating technical enquiries AN4869

Principle of rating parallel connected IGBT modules AN5000
Short circuit withstand capability in IGBTs AN5167
Driving high power IGBTs with Concept gate drivers AN5190

POWER ASSEMBLY CAPABILITY

The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the

voltage and current capability of Dynex semiconductors.
An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.

HEATSINKS

The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

GP400DDS18

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.

Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontarion, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Central Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Central Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5359-2 Issue No. 2.0 January 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/10

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