Datasheet GP200MLS12 Datasheet (DYNEX)

GP200MLS12

GP200MLS12

IGBT Chopper Module

Preliminary Information

DS5421-1.5 April 2001

FEATURES

■ Internally Configured With Lower Arm Controlled

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

APPLICATIONS

■ High Power Choppers

■ Motor Controllers

■ Induction Heating

■ Resonant Converters

■ Power Supplies

The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.

The GP200MLS12 is a 1200V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module
configured with the lower arm of the bridge controlled. The
module incoporates high current rated freewheel diodes. The
IGBT has a wide reverse bias safe operating area (RBSOA)
ensuring reliability in demanding applications.

KEY PARAMETERS
V
V
I

C

I

C(PK)

CES
CE(sat)

(typ) 2.7V
(max) 200A
(max) 400A

2

11(C

)

1(A

)

1C2

Fig. 1 Chopper circuit diagram

1200V

2(E2)

6(G
7(E

3(K1)

2

)

2

)

The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

11
10

1

8
9

2

3

6
7

5
4

Order As:

GP200MLS12

Note: When ordering, please use the whole part number.

Outline type code: M

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

www.dynexsemi.com

GP200MLS12

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor (per arm)

Thermal resistance - antiparallel diode

Parameter

Test Conditions

= 0V

V

GE

-

DC, T

1ms, T

T

= 72˚C

case

= 72˚C

case

= 25˚C, Tj = 150˚C

case

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation

Min.

-

-

Max.

1200

±20

200

400

1490

2500

Max.

84

160

Units

V

V

A

A

W

V

Units

˚C/kW

˚C/kW

R

th(c-h)

Thermal resistance - freewheel diode

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

-

80

15

˚C/kW

˚C/kW

(with mounting grease)

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

Electrical connections - M6

-

-

–40

-

-

150

125

125

5

5

˚C

˚C

˚C

Nm

Nm

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP200MLS12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage - antiparallel diode

Diode forward voltage - freewheel diode

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

I

= 10mA, VGE = V

C

CES

CES

VGE = 15V, IC = 200A

= 15V, IC = 200A, , T

V

GE

DC

= 1ms

t

p

= 200A

I

F

= 200A, T

I

F

= 200A

I

F

= 200A, T

I

F

= 125˚C

case

= 125˚C

case

CE

, T

= 125˚C

case

case

= 125˚C

Min.

-

-

-

4.5

-

-

-

-

-

-

-

-

Typ.

-

-

-

-

2.7

3.2

-

-

2.2

2.3

1.7

1.7

Max.

1

12

±1

6.5

3.5

4.0

200

400

2.4

2.5

2.1

2.2

Units

mA

mA

µA

V

V

V

A

A

V

V

V

V

C

ies

L

M

Input capacitance

Module inductance

= 25V, VGE = 0V, f = 1MHz

V

CE

-

25

30

nF

-

nH

-

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

www.dynexsemi.com

GP200MLS12

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

E

t

E

d(off)

t

OFF

d(on)

t

ON

Q

f

r

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge -

rr

freewheel diode

T

= 125˚C unless stated otherwise

case

Symbol

t

d(off)

Turn-off delay time

Parameter

Parameter

Test Conditions

= 200A

I

C

= ±15V

V

GE

= 600V

V

CE

R

G(ON)

= R

G(OFF)

= 4.7Ω

L ~ 100nH

IF = 200A, VR = 50% V

dI

/dt = 2500A/µs

F

Test Conditions

= 200A

I

C

CES

Min.

,

Min.

Typ.

500

-

150

-

-

400

-

-

-

-

Typ.

600

-

Max.

25

80

20

20

Max.

700

200

35

550

110

30

30

800

Units

ns

ns

mJ

ns

ns

mJ

µC

Units

ns

E

t

E

d(on)

Q

t

f

OFF

t

r

ON

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge -

rr

freewheel diode

= ±15V

V

GE

= 600V

V

CE

R

G(ON)

= R

G(OFF)

= 4.7Ω

L ~ 100nH

= 200A, VR = 50% V

I

F

/dt = 2000A/µs

dI

F

CES

200

-

-

-

-

-

,

-

40

500

110

40

55

250

50

650

150

55

70

ns

mJ

ns

ns

mJ

µC

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

TYPICAL CHARACTERISTICS

GP200MLS12

Vge = 20/15/12/10V

400

Common emitter

= 25˚C

T

case

350

300

- (A)

250

C

200

150

Collector current, I

100

50

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics

Vge = 20/15/12/10V

400

Common emitter
T

= 125˚C

case

350

300

- (A)

250

C

200

150

Collector current, I

100

50

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

60

Tj = 125˚C
V

= ±15V

GE

V

= 600V

CE

50

40

- (mJ)

ON

30

20

Turn-on energy, E

10

A: Rg = 10Ω
B: R
C: R

0

0 20050

Collector current, I

100 150

- (A)

C

Fig. 5 Typical turn-on energy vs collector current

A

B

C

= 6.2Ω

g

= 4.7Ω

g

50

Tj = 125˚C
V

= ±15V

GE

45

V

= 600V

CE

40
35

- (mJ)

30

OFF

25
20
15

Turn-off energy, E

10

A: Rg = 10Ω

5

B: R
C: R

0

0 20050 100

Collector current, I

- (A)

C

150

Fig. 6 Typical turn-off energy vs collector current

= 6.2Ω

g

= 4.7Ω

g

A
B

C

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10

www.dynexsemi.com

GP200MLS12

36

= ±15V

V

GE

V

= 900V

CE

32

T

= 125˚C

28

- (mJ)

24

off(diode)

20

16

12

8

Diode turn-off energy, E

4

0

0 25 50 75 100 125 150 175 200

Collector current, I

case

T

- (A)

T

case

= 25˚C

Fig. 7 Freewheel diode typical turn-off energy

vs collector current

900

800

700

600

500

t

d(off)

t

d(on)

400

300

Switching times, - (ns)

200

t

f

100

t

0

r

015050 100

Collector current, I

Fig. 8 Typical switching characteristics

- (A)

C

Tj = 125˚C
V

= ±15V

GE

V

= 600V

CE

R

= 4.7Ω

g

200

400

350

300

- (A)

250

F

200

Tj = 25˚C

Tj = 125˚C

10000

1000

- (A)

C

100

IC max. (single pulse)

I

C

max. DC (continuous)

100µs

150

Forward current, I

100

50

0

0 0.5 1 1.5 2 2.5 3 3.5

Forward voltage, V

- (V)

F

Collector current, I

10

1

1 10 100 1000 10000

Collector-emitter voltage, V

ce

- (V)

Fig. 9 Freewheel diode typical forward characteristics Fig. 10 Reverse bias safe operating area

50µs

tp = 1ms

6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

GP200MLS12

500

450

400

350

- (A)

C

300

250

200

Collector current, I

150

100

T

= 125˚C

case

V

= ±15V

ge

50

R

= 4.7Ω*

g

*Recommended minimum value

0

0 200 400

Collector-emitter voltage, V

Fig. 11 Forward bias safe operating area

600

RBSOA

800

ce

- (V)

1000 1200

1000

- (°C/kW )

th (j-c)

100

10

Transient thermal impedance, Z

1

0.001 0.01 10.1
Pulse width, t

Fig. 12 Transient thermal impedance

Antiparallel diode

- (s)

p

Transistor

10

320

280

240

200

- (A)

C

160

120

Collector current, I

80

40

0

020406010 30 50 8070 90 100 110120 130

Case temperature, T

case

- (˚C)

Fig. 13 DC current rating vs case temperature

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10

www.dynexsemi.com

GP200MLS12

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

62 ± 0.8

11
10

48 ± 0.3

8
9

38max

3x M6

1

28 ± 0.5

2

93 ± 0.3

106 ± 0.8
108 ± 0.8

28 ± 0.5

3

6

7

4x Fast on
tabs

5

4

8

23

Nominal weight: 270g

Recommeded fixings for mounting: M6

Recommended mounting torque: 5Nm (44lbs.ins)

Recommended torque for electrical connections (M6): 5Nm (44lbs.ins)

Module outline type code: M

8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Electrostatic handling precautions AN4502
An introduction to IGBTs AN4503
IGBT ratings and characteristics AN4504
Heatsink requirements for IGBT modules AN4505
Calculating the junction temperature of power semiconductors AN4506
Gate drive considerations to maximise IGBT efficiency AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508
Guidance notes for formulating technical enquiries AN4869
Principle of rating parallel connected IGBT modules AN5000
Short circuit withstand capability in IGBTs AN5167
Driving high power IGBTs with Concept gate drivers AN5190

POWER ASSEMBLY CAPABILITY

GP200MLS12

The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.

An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.

HEATSINKS

The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10

www.dynexsemi.com

GP200MLS12

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5421-1 Issue No. 1.5 April 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com