Compact Photointerrupter
GP1S53V/GP1S58V
GP1S53V/GP1S58V
■ Features
1. Compact type
2. High sensing accuracy (Slit width: 0.5mm
3. PWB direct mounting type
4. With positioning pin (GP1S58V
)
■ Outline Dimensions
GP1S53V
Internal connection
diagram
A-A’ section
3.5
MIN 10
)
Tolerance
2
1
3 Collector
4 Emitter
0.5
3
4
1 Anode
2 Cathode
C1
+ 0.3
0.45
- 0.1
(
)
2.54
*Unspecified tolerances
shall be as follows ;
Dimensions(d
d<=6.0 ± 0.1
6.0<d<=18.0 ± 0.2
* ( ): Reference dimensions
10
4
3
7.5
13.7
5.0
S53
A’
(
A
10.3
+ 0.3
- 0.3
+ 0.2
- 0.1
B
B’
5.2
)
2.5
(
+0.3
0.4
- 0.1
)
1
2
)
B-B ’ section
)
0.5
Sensor center
(
■ Applications
1. OA equipment, such as FDDs, printers,
facsimiles
2. VCRs
3. Optoelectronic switches
GP1S58V
Internal connection
diagram
3
4
1 Anode
2 Cathode
1.5
C1
+0.3
0.45
- 0.1
(
)
2.54
*Unspecified tolerances
shall be as follows;
Dimensions(d
d<= 6.0 ± 0.1
6.0< d<=18.0 ± 0.2
* ( ): Reference dimensions
3 Collector
4 Emitter
A-A’ section
3.5
MIN 10
)
Tolerance
2
1
0.5
7.5
10
2-0.7
4
2.0
3
13.7
5.0
6.5
S58
A
A’
(
10.3
+ 0.3
- 0.3
+ 0.2
- 0.1
B
B’
0.4
)
2 - φ 0.7
2.5
(
Unit : mm
5.2
B-B’ section
)
0.5
)
2.5
(
Sensor center
(
+ 0.3
- 0.1
1
2
)
1.5
■ Absolute Maximum Ratings
Parameter
Forward current I
*1
Peak forward current I
Input
Reverse voltage V
Symbol
F
FM
R
(
Ta= 25˚C
Rating Unit
50 mA
1A
6V
)
Power dissipation P 75 mW
Collector-emitter voltage
Emitter-collector voltage
Output
Collector current I
Collector power dissipation
Operating temperature
Storage temperature T
*2
Soldering temperature
*1 Pulse width<=100µs, Duty ratio= 0.01
*2 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
V
CEO
V
ECO
P
T
T
C
C
opr
stg
sol
35 V
6V
20 mA
75 mW
-
25 to + 85
- 40 to + 100
˚C
˚C
260 ˚C
GP1S53V/GP1S58V
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage V
Input
Output Collector dark current I
Transfer
characteristics
Fig. 1 Forward Current vs. Ambient
Temperature
)
mA
(
Forward current I
Fig. 3 Peak Forward Current vs.
Duty Ratio
)
mA
(
FM
Peak forward current I
Peak forward voltage V
Reverse current I
Collector Current Ic
Collector-emitter saturation voltage
= 25˚C
a
10
-1
Rise time t
Fall time t
85 - 25 0 25 50 75 100
)
Response time
60
50
40
F
30
20
10
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
Pulse width<=100µs
2000
1000
500
200
100
50
20
-2
55252
10
T
Duty ratio
(
Ta= 25˚C
IF= 20mA - 1.25 1.4 V
F
IFM= 0.5A - 3 4 V
FM
VR=3V - - 10 µA
R
CEO
V
CE(sat
VCE= 20V -
= 20mA, VCE= 5V 0.5 mA
I
F
)
IF= 40mA, IC= 0.2mA - - 0.4 V
r
f
VCE= 2V, IC= 2mA
RL= 100 Ω
-315µs
-420µs
1 100 nA
- 1.5
)
Fig. 2 Collector Power Dissipation vs.
Ambient Temperature
120
)
100
mW
(
C
80
75
60
40
20
Collector power dissipation P
0
Ambient temperature Ta (˚C
85
)
Fig. 4 Forward Current vs.
Forward Voltage
500
Ta= 75˚C
200
)
100
mA
(
F
50
20
10
Forward current I
5
2
0
10
1
0 0.5 1 1.5 2
50˚C
Forward voltage VF (V
25˚C
0˚C
- 25˚C
2.5 3
)
3.5
GP1S53V/GP1S58V
Fig. 5 Collector Current vs.
Forward Current
5
VCE=5V
T
= 25˚C
a
4
)
mA
(
C
3
2
Collector current I
1
0
Forward current IF (mA
Fig. 7 Collector Current vs.
Ambient Temperature
3.0
I
= 20mA
F
V
=5V
CE
2.5
)
mA
(
2.0
C
1.5
1.0
Collector current I
0.5
Fig.6 Collector Current vs.
Collector-emitter Voltage
5
T
= 25˚C
a
4
)
mA
(
C
3
2
Collector current I
1
50403020100
)
Collector-emitter voltage VCE (V
= 50mA
I
F
40mA
30mA
20mA
10mA
1098765432100
)
Fig. 8 Collector-emitter Saturation Voltage vs.
Ambient Temperature
0.3
= 40mA
I
F
I
= 0.2mA
C
0.25
)
V
(
)
sat
(
0.2
CE
V
0.15
0.1
0.05
Collector-emitter saturation voltage
0 0
-25 -25
0 255075100
Ambient temperature Ta (˚C
)
Fig. 9 Response Time vs.
Load Resistance
100
VCE=2V
= 2mA
I
C
50
= 25˚C
T
a
20
)
10
µ s
(
5
2
Response time
1
0.5
t
f
t
r
t
d
t
s
0.2
0.1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
)
Load resistance R
(k Ω
L
Input
Ambient temperature T
Test Circuit for Response Time
V
R
D
CC
R
L
Output
Input
Output
1007550250
)
(˚C
a
10%
90%
t
t
d
s
t
r
t
f
GP1S53V/GP1S58V
Fig.10 Frequency Response
VCE=2V
= 2mA
I
C
T
0
)
dB
(
-5
= 10kΩ
R
3
10
L
4
10
Frequency f (Hz
-10
Voltage gain Av
-15
-20
5
2 252525
a
1kΩ
5
10
)
Fig.12 Relative Collector Current vs.
Shield Distance (1
100
)
%
(
50
)
IF= 20mA, VCE=5V
T
= 25˚C
a
L
Shield
0
(
Detector center
= 25˚C
100Ω
Detector
+-
)
Fig.11 Collector Dark Current vs.
Ambient Temperature
-6
10
VCE= 20V
5
)
2
A
(
-7
10
5
CEO
2
-8
10
5
2
-9
10
Collector dark current I
5
2
-10
6
10
10
- 25 25 50 75 100
0
Ambient temperature Ta (˚C
)
Fig.13 Relative Collector Current vs.
Shield Distance (2
100
)
%
(
50
)
IF= 20mA, VCE=5V
= 25˚C
T
a
Shield
L
Detector
0
+
)
Detector center
(
Relative collector current
0
-
-
2.5
-1-
-
1.5 0 0.5
2.0
Shield distance L (mm
0.5 2.5
21.51
)
Relative collector current
■ Precautions for Use
(1)
In case of cleaning, use only the following type of cleaning solvent.
Ethyl alcohol, methyl alcohol, Isopropyl alcohol
(2)
As for other general cautions, refer to the chapter “ Precautions for Use”.
0
-1-2
Shield distance L (mm
102
)
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