GP1S34
GP1S34
Subminiature, High Sensing
Accuracy Photointerrupter
■ Features
1. Ultra-compact package
2. PWB mounting type
3. High sensing accuracy (Slit width: 0.1mm
4. With a mounting hole
■ Applications
1. Cameras
2. Floppy disk drives
3. Handy scanners
4.2
❈2.5
(
Unit : mm
3
2
3 Emitter
4 Cathode
(
)
C0.8
+
0.1
φ 1.5
-
0
■ Outline Dimensions
Internal connection diagram
)
4 - 0.15
Center of
light path
)
1
(
2.8
+ 0.2
- 0.1
❈3.1
12
4.2
Slit width of
1.21.4
1.45
detector side : 0.1mm
5.2
MIN.
4.0
* Tolerance:± 0.2mm
* Burr's dimensions : 0.15MAX.
* Rest of gate: 0.3MAX.
* ( ): Reference dimensions
* The dimensions indicated by ❈ refer
34
to those measured from the lead base.
4
1
1 Anode
2 Collector
3.9
Rest of gate
4 - 0.5
)
hole
■ Absolute Maximum Ratings
(
Ta= 25˚C
)
Parameter Symbol Rating Unit
Input
Forward current I
Reverse voltage
F
V
R
50 mA
6V
Power dissipation P 75 mW
Collector-emitter voltage V
Output
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Total power dissipation
Operating temperature
Storage temperature T
*1
Soldering temperature
*1 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
CEO
ECO
C
C
P
tot
T
opr
stg
T
sol
35 V
6V
20 mA
75 mW
100
- 25 to + 85
mW
˚C
- 40 to + 100 ˚C
260 ˚C
1mm or more
Soldering area
GP1S34
■ Electro-optical Characteristics
Parameter Symbol MIN. TYP. MAX. Unit
Input
Output
Transfer
characteristics
Fig. 1 Forward Current vs. Ambient
Temperature
)
mA
(
Forward current I
Forward voltage V
Reverse current I
Collector dark current
Collector current I
Collector-emitter saturation voltage
Response time
60
50
40
F
30
20
10
Rise time t
Fall time t
(
Ta = 25˚C
)
Conditions
IF= 20mA - 1.2 1.4 V
F
R
I
CEO
C
V
CE(sat
r
f
VR=3V - - 10 µA
VCE= 20V - - 100
VCE= 5V, IF= 5mA 80 - 320 µA
)
IF= 10mA, IC=50µA
VCE= 5V, IC= 100 µ A
= 1 000 Ω
R
L
- - 0.4 V
- 50 150
- 50 150
nA
µ s
µ s
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P
P, P
tot
c
100
)
mW
80
(
60
40
Power dissipation P
20
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 3 Forward Current vs. Forward Voltage
500
200
)
100
mA
(
50
F
20
10
Forward current I
Ta= 75˚C
50˚C
5
2
1
0 0.5 1 1.5 2
Forward voltage VF (V
- 25˚C
)
25˚C
0˚C
2.5 3
0
- 25 0 25 50 75 100
Ambient temperature T
a
(˚C
Fig. 4 Collector Current vs.
Forward Current
=5V
V
CE
2.0
T
= 25˚C
a
1.8
)
mA
1.6
(
C
1.4
1.2
1.0
0.8
Collector current I
0.6
0.4
0.2
0
0 1020304050
Forward current I
F
(mA
85
)
)
GP1S34
Fig. 5 Collector Current vs. Fig. 6 Collector Current vs.
Collector-emitter Voltage
2.0
1.8
)
mA
1.6
(
C
1.4
1.2
1.0
0.8
Collector current I
0.6
0.4
0.2
0
Collector-emitter voltage V
IF= 50mA
40mA
30mA
20mA
10mA
5mA
(V
CE
1002468
)
Fig. 7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
IF=10mA
)
I
=50µ A
C
V
(
)
sat
(
CE
0.20
0.15
Collector-emitter saturation voltage V
0.10
-25
025507585
)
Ambient temperature T
a
(˚C
Ambient Temperature
250
200
)
µ A
(
C
150
100
Collector current I
50
- 25 0 25 50 75 85
Ambient temperature T
Fig. 8 Collector Dark Current vs.
Ambient Temperature
-6
10
VCE= 20V
5
2
)
A
-7
(
10
CEO
5
2
-8
10
5
2
-9
10
Collector dark current I
5
2
-10
10
25 50 75 1000
Ambient temperature Ta (˚C
Fig. 9 Response Time vs. Load Resistance
a
(˚C
V
CE=5V
I
F=5mA
)
)
100
)
µ s
(
10
Response time
1
0.5
0.3 0.5 1.0 5.0 10
Load resistance RL (kΩ
VCE=5V
I
= 100µ A
t
r
t
f
t
d
t
s
C
T
a
= 25˚C
Test Circuit for Response Time
V
Input
R
D
CC
R
L
Output
Input
Output
10%
90%
t
t
d
s
t
r
t
f
)
GP1S34
Fig.10 Relative Collector Current vs.
Shield Distance (1
100
)
%
(
90
80
70
60
50
40
Relative collector current
30
20
10
- 0.5 - 0.25 0 0.25
Shield distance L (mm
● Please refer to the chapter “ Precautions for Use”.
)
Shield
L
Emitter Detector
)
0.2
max 0.2
IF= 5mA
V
=5V
CE
T
= 25˚C
a
0
+
Fig.11 Relative Collector Current vs.
Shield Distance (2
100
)
90
%
(
80
70
60
50
40
30
Relative collector current
20
10
123
Shield distance L (mm
)
Shield
I
F
V
CE
T
a
)
L= 0
+
L
= 5mA
=5V
= 25˚C
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