Page 1
GP1S33
GP1S33
Subminiature, Reflow Soldering
Type Photointerrupter
■ Features
1. Ultra-compact package
2. PWB mounting type
3. High sensing accuracy (Slit width: 0.3mm
4. Applying to reflow soldering
Preheat : 160˚C within 120 seconds
Reflow : 200˚C within 60 seconds
(
Peak : 240˚C
)
■ Applications
1. Floppy disk drives
2. Cameras
4.2
❈2.5
(
Unit : mm
3
2
3 Emitter
4 Cathode
(
C0.8
5.2
Rest of gate
■ Outline Dimensions
Internal connection diagram
)
5.0
Center of
light path
3.5
0.2-0.1
+
0.15
-
4
2.01.5
)
1.0
(
3.8
12
4
1
1 Anode
2 Collector
)
0.3
Slit width
(
)
C0.3
4 - 0.5
±
0.5
1.0
* Tolerance:± 0.2mm
* Burr's dimensions : 0.15MAX.
* Rest of gate : 0.3MAX.
* ( ): Reference dimensions
*
The dimensions indicated by ❈ refer
to those measured from the lead base.
34
)
)(
■ Absolute Maximum Ratings
(
Ta = 25˚C
)
Parameter Symbol Rating Unit
Input
Forward current I
Reverse voltage
F
V
R
50 mA
6V
Power dissipation P 75 mW
Collector-emitter voltage V
Output
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Total power dissipation
Operating temperature
Storage temperature T
*1
Soldering temperature
*1 For 3 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
CEO
ECO
C
C
P
tot
T
opr
stg
T
sol
35 V
6V
20 mA
75 mW
100
- 25 to + 85
mW
˚C
- 40 to + 100 ˚C
260 ˚C
Soldering area
0.5mm or more
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GP1S33
■ Electro-optical Chara
Parameter Symbol MIN. TYP. MAX. Unit
Input
Output
Transfer
characteristics
Fig. 1 Forward Current vs. Ambient
Temperature
)
mA
(
Forward current I
Forward voltage V
Reverse current I
Collector dark current
Collector current I
Collector-emitter saturation voltage
Response time
60
50
40
F
30
20
10
Rise time t
Fall time t
(
Ta = 25˚C
)
Conditions
IF= 20mA - 1.2 1.4 V
F
R
I
CEO
C
V
CE(sat
r
f
VR=3V - - 10 µA
VCE= 20V - - 100
VCE= 5V, IF= 5mA - µ A
)
= 10mA, IC=40µA
I
F
VCE= 5V, IC= 100 µ A
= 1 000Ω
R
L
100 600
- - 0.4 V
- 50 150
- 50 150
nA
µ s
µ s
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P
P, P
tot
c
100
)
80
mW
(
60
40
Power dissipation P
20
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 3 Forward Current vs. Forward Voltage
500
- 25˚C
)
25˚C
0˚C
200
)
100
mA
(
50
F
20
10
Forward current I
Ta= 75˚C
50˚C
5
2
1
0 0.5 1 1.5 2 2.5 3
Forward voltage VF (V
0
- 25 0 25 50 75 100
Ambient temperature T
a
(˚C
85
)
Fig. 4 Collector Current vs. Forward Current
1.0
V
=5V
CE
= 25˚C
T
a
0.8
)
mA
(
C
0.6
0.4
Collector current I
0.2
0
04 2081216
Forward current IF (mA
)
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GP1S33
Fig. 5 Collector Current vs.
Collector-emitter Voltage
Ta= 25˚C
3.0
)
mA
(
2.4
C
IF= 50mA
40mA
1.8
30mA
1.2
20mA
Collector current I
0.6
10mA
5mA
0
Collector-emitter voltage V
)
(V
CE
Fig. 7 Collector-emitter Saturation Voltage vs.
Ambient Temperature
0.14
)
V
(
)
sat
(
CE
0.12
IF= 10mA
I
=40µA
C
0.10
0.08
0.06
Collector-emitter saturation voltage V
0.04
-25
25 50 75 100
Ambient temperature Ta (˚C
)
Fig. 9 Response Time vs. Load Resistance
Fig. 6 Collector Current vs.
Ambient Temperature
0.25
0.20
)
mA
(
C
0.15
0.10
Collector current I
0.05
0
-25
00105
Ambient temperature Ta (˚C
Fig. 8 Collector Dark Current vs.
Ambient Temperature
-6
10
V
= 20V
CE
5
)
2
A
(
-7
10
CEO
5
2
-8
10
5
2
-9
10
Collector dark current I
5
2
-10
10
25 50 75 10000
Ambient temperature T
a
(˚C
Test Circuit for Response Time
= 5mA
I
F
V
CE
=5V
100755025
)
)
500
200
100
50
)
t
f
µ s
(
20
t
r
10
t
d
5
Response time
2
t
s
1
0.5
0.3
VCE=5V
= 100µA
I
C
T
= 25˚C
a
Load resistance RL (k Ω
Input
V
R
D
CC
R
L
Output
Input
Output
10%
90%
t
t
d
s
t
r
t
f
1 2 5 10 20 50 1000.1 0.2 0.50.05
)
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GP1S33
Fig.10 Relative Collector Current vs.
Shield Distance (1
100
)
%
(
80 80
60
40
Relative collector current
20
0
-2 2
-1
Shield distance L (mm
● Please refer to the chapter “ Precautions for Use”.
)
I
= 5mA
F
=5V
V
CE
T
= 25˚C
a
L
Shield
0
(
Detector center
01
)
Detector
+-
)
Fig.11 Relative Collector Current vs.
Shield Distance (2
100
)
%
(
60
40
Relative collector current
20
0
-2
Shield distance L (mm
-1
)
IF= 5mA
=5V
V
CE
T
= 25˚C
a
Shield
L
Detector
012
)
)
0
+
Detector center
(
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