Page 1
GP1S27
GP1S27
Subminiature Photointerrupter
■ Features
1. Ultra-compact
2. PWB mounting type package
3. Current transfer ratio
(CTR : MIN. 4.3%
)
■ Applications
1. Cameras
2. Floppy disk drives
■ Outline Dimensions
MAX.
3.9
Center of
light path
0.91.5
)
2.5
1.0
(
❈
2.54
41
3
4.0
(
)
C0.3
Rest of gate
4 - 0.15
* Tolerance:± 0.2mm
* Burr's dimensions: 0.15MAX.
* Rest of gate : 0.3MAX.
* ( ): Reference dimensions
2
*
The dimensions indicated by ❈ refer
to those measured from the lead base.
(
Unit : mm
Internal connection diagram
3
4
4.0
(
)
C0.8
)
0.3
±
Light path
4.0
(
(2)
4 - 0.4
❈
2.54
1 Anode
2 Cathode
3 Emitter
4 Collector
2
1
(
)
0.8
Slit width
5.1
MIN.
4.0
)
■ Absolute Maximum Ratings
(
Ta = 25˚C
)
Parameter Symbol Rating Unit
Input
Forward current I
Reverse voltage V
F
R
50 mA
6V
Power dissipation P 75 mW
Collector-emitter voltage V
Output
Emitter-collector voltage V
Collector current I
Collector power dissipation P
Total power dissipation P
Operating temperature T
Storage temperature T
*1
Soldering temperature
*1 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
CEO
ECO
C
C
tot
opr
stg
T
sol
35 V
6V
20 mA
75 mW
100 mW
- 25 to + 85 ˚C
- 40 to + 100 ˚C
260 ˚C
Soldering area
1mm or more
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GP1S27
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input
Output Collector dark current I
Transfer
characteristics
Fig. 1 Forward Current vs. Ambient
Temperature
)
mA
(
Forward current I
Forward voltage V
Reverse current I
Collector Current Ic
Collector-emitter saturation voltage
Response time
60
50
40
F
30
20
10
Rise time t
Fall time t
(
Ta = 25˚C
F
R
CEO
V
CE(sat
r
f
IF= 20mA - 1.2 1.4 V
VR=3V - - 10 µA
VCE= 20V - -
= 1.5mA, VCE= 5V 65 - 200 µ A
I
F
)
IF= 3mA, IC=30µA - - 0.4 V
VCE= 5V, RL=1kΩ
= 100 µ A
I
C
- 50 150 µs
- 50 150 µs
1x10
-
7
)
A
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P
P, P
tot
c
100
)
80
mW
(
60
40
Power dissipation P
20
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 3 Forward Current vs. Forward Voltage
500
T
= 75˚C
200
100
)
mA
(
F
Forward current I
a
50˚C
50
20
10
5
2
1
0 0.5 1 1.5 2
Forward voltage VF (V
25˚C
0˚C
- 25˚C
2.5 3
)
3.5
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 4 Collector Current vs. Forward Current
1.8
VCE=5V
1.6
1.4
)
mA
(
1.2
C
1.0
0.8
0.6
Collector current I
0.4
0.2
= 25˚C
T
a
0
02
Forward current IF (mA
10468
)
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GP1S27
Fig. 5 Collector Current vs.
Collector-emitter Voltage
10
Ta= 25˚C
9
8
)
7
mA
(
C
6
5
4
3
Collector current I
I
F
= 50mA
40mA
30mA
20mA
2
1
0
1234 6789
010
1.5mA
5
Collector-emitter voltage V
10mA
(
)
P
MAX.
C
(V)
CE
Fig. 7 Collector-emitter Saturation Voltage vs.
Ambient Temperature
0.12
I
= 3mA
F
I
=30µA
C
0.10
)
V
(
)
sat
(
0.08
CE
V
Fig. 6 Collector Current vs.
)
mA
(
Collector current I
Fig. 8 Collector Dark Current vs.
)
(
0.06
0.04
0.02
Collector-emitter saturation voltage
0
-25
25 50 75 100
Ambient temperature Ta (˚C
)
Fig. 9 Response Time vs. Load Resistance
500
200
100
50
)
µ s
(
20
10
5
Response time
2
1
0.5
0.3
t
f
t
r
t
d
t
s
=5V
V
CE
= 100µ A
I
C
T
= 25˚C
a
1 2 5 10 20 50 1000.1 0.2 0.50.05
Load resistance R
L
(kΩ
Input
R
)
Ambient Temperature
0.30
0.25
0.20
C
0.15
0.10
0.05
0
-25 100755025
0
Ambient temperature Ta (˚C
Ambient Temperature
-6
10
V
CE
= 20V
25 50 75 10000
5
2
A
-7
10
CEO
5
2
-8
10
5
2
-9
10
Collector dark current I
5
2
-10
10
Ambient temperature T
Test Circuit for Response Time
V
D
CC
R
L
Output
Input
Output
t
d
t
r
IF=1.5mA
V
=5V
CE
)
)
(˚C
a
t
s
10%
90%
t
f
Page 4
GP1S27
Fig.10 Relative Collector Current vs.
IF= 1.5mA
VCE=5V
T
Shield
0123-1-2
)
= 25˚C
a
L
-+
0
(
Detector center
)
Shield Distance(1
100
)
%
(
50
Relative collector current
0
Shield distance L (mm
Detector
)
Fig.11 Relative Collector Current vs.
Shield Distance(2
100
)
%
(
50
Relative collector current
0
-2-10123
■ Precautions for Use
(1)
Please refrain from soldering under preheating and refrain from soldering by reflow.
(
)
2
As for other general cautions, refer to the chapter “Precautions for Use”.
)
IF= 1.5mA
=5V
V
CE
= 25˚C
T
a
L
Detector
Shield distance L (mm
Shield
)
0
Detector center
+
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