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GP1S25
GP1S25
Side Lead Type Ultra-compact
Photointerrupter
■■
Features
Outline Dimensions
(Unit : mm)
1. Side lead ultra-compact transmission type
2. Conforming to solder reflow
Pre-heat : 160˚C, MAX. 120 sec
Reflow : 200˚C, MAX. 60 sec
(
240˚C, MAX. 10 sec
3. Slit : 0.3 mm
4. Gap : 1.6 mm
■
Applications
1. CD-ROM drives
2. FDDs
Top View
a
)
(
0.15
C0.3
2.5
a
0.6
1.25
1.0
1.6
(0.85)
3.0
4.0
+0.2
-0.1
)
1
2
3
4
Circuit diagram:Top View
4
3
2
1
3.4
Optical
center
(
C0.3
)
S
4 6
1 2 3 4
❈0.8
φ0.8
0.4
❈0.87
5.2
(1)
❈0.87
*Tolerance :±0.2 mm
*( ) : Connector dimensions for reference
* The dimensions indicated by❈ refer
to those measured from the lead base.
* Dimensions shown do not include burr.
Burr's dimension : 0.15 MAX.
Rest of gate : 0.3 MAX.
1 Anode
2 Collector
3 Emitter
4 Cathode
a-a section
(
0.3)Slit width
Gate position
■
Absolute Maximum Ratings
Parameter Symbol Unit
Forward current
Input
Reverse voltage
Power dissipation
Collector-emitter voltage
Output
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
*1 Soldering time : For 3 seconds (hand soldering)
(Ta=25˚C)
Rating
I
F
V
R
50 mA
6V
P75mW
V
CEO
V
ECO
I
C
P
C
P
tot
T
opr
T
stg
T
sol
35 V
6V
20 mA
75 mW
100 mW
-25to+ 85
-40to+ 100
˚C
˚C
260 ˚C
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GP1S25
■
Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input
Output
Forward voltage
Reverse current
Dark current
Collector current
Transfer
characteristics
Collector-emitter saturation voltage
Response time
Rise time
Fall time
Fig. 1 Forward Current vs. Ambient
Temperature
60
50
)
mA
(
40
F
30
20
Forward current I
10
V
V
I
CEO
CE(sat
I
I
t
t
F
R
C
)
r
f
IF= 20mA
VR=3V
VCE= 20V
VCE= 5V, IF= 5mA
= 10mA, IC=50µA
I
F
V
= 5V, IC= 100µ A
CE
= 1 000 Ω
L
- 1.2 V
-- µA
--
50 - µA
-- V
-
-R
Fig. 2 Power dissipation vs. Ambient
Temperature
120
Total power dissipation
100
Input side power dissipation and
output side collector power dissipation
80
60
40
Power dissipation P (mW)
20
(Ta=25 ˚C)
1.4
10
100
nA
300
0.4
35
100
35
100
µs
µs
0
- 25 0 25 50 75 100 - 25 0 25 50 75 1008585
Ambient temperature Ta (˚C)
Fig. 3 Forward Current vs. Forward Voltage
500
= 75˚C
T
200
100
)
mA
(
50
F
20
10
5
Forward current I
2
1
0 0.5 1 1.5 2
a
50˚C
Forward voltage VF (V
- 25˚C
2.5 3
)
25˚C
0˚C
0
Ambient temperature Ta (˚C)
Fig. 4 Collector Current vs. Forward Current
2.0
)
1.6
mA
(
C
1.2
0.8
Collector current I
0.4
0
048121620
Forward current IF (mA
VCE=5V
Ta =25˚C
)
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GP1S25
Fig. 5 Collector Current vs. Collector-emitter
Voltage
3.0
)
2.4
mA
(
C
1.8
IF=50mA
40mA
1.2
Collector current I
0.6
30mA
20mA
10mA
5mA
0
0428610
Collector-emitter voltage VCE (V
)
Fig. 7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
0.20
)
V
(
0.18
)
sat
(
CE
0.16
0.14
0.12
0.10
0.08
0.06
Collector-emitter saturation voltage V
- 25 0 25 50 75 85
Ambient temperature Ta (˚C)
VF =10mA
C =40µA
I
Fig. 6 Relative Collector Current vs.
Ambient Temperature
120
110
100
)
90
mA
(
80
C
70
60
50
40
30
Collector current I
20
10
0
- 25 0 25 50 75 85
Ambient temperature Ta (˚C)
IF=5mA
V
CE=5V
Fig. 8 Dark Current vs. Ambient Temperature
-6
10
10
)
A
(
CEO
10
Dark current I
10
10
-10
VCE= 20V
5
2
-7
5
2
-8
5
2
-9
5
2
25 50 75 1000
Ambient temperature Ta (˚C)
Fig. 9 Response Time vs. Load Resistance
1000
VCE =5V
C =100µ A
I
500
tr
tf
100
50
td
10
Response time (µs)
5
0.1 1 5 10 50100 1000
Load resistance RL (kΩ
ts
)
Test Circuit for Response Time
V
Input
R
D
CC
R
L
Output
Output
Input
10%
90%
t
t
d
s
t
r
t
f
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GP1S25
Fig. 10 Detecting Position Characteristics (1) Fig. 11 Detecting Position Characteristics (2)
100
90
80
70
60
50
40
30
Relative collector current (%)
20
10
0
0 0.5 1 1.5 2 2.5
IF =5mA
VCE =5V
L=0
Shield distance L (mm)
Please refer to the chapter "Precautions for Use".
●
L
100
90
80
70
60
50
40
30
20
Relative collector current (%)
10
0
0 0.5 1 1.5 2
Shield distance L (mm)
IF =5mA
V
CE =5V
L
L=0
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