GP1L27
GP1L27
Subminiature, High Sensitivity
Photointerrupter
■ Features
1. Ultra-compact, high sensitivity
(CTR: MIN. 50%
)
2. PWB direct mounting type
■ Applications
1. Cameras
2. Floppy disk drives
■ Outline Dimensions
MAX.
3.9
Center of
light path
2.5
(
)
C0.3
)
1.0
(
0.91.5
2.54
(
C0.8
4.0
Rest of gate
(2)
+ 0
4 - 0.15
14
*Tolerance:± 0.2mm
*Burr's dimensions: 0.15MAX.
*Rest of gate: 0.3MAX.
*( ): Reference dimensions
*The dimensions indicated by ❈ refer
to those measured from the lead base.
23
(
Unit : mm
Internal connection diagram
4
3
1 Anode
2 Cathode
)
)
Light path
(
0.3
±
4.0
4 - 0.4
4.0
❈❈
2.54
2
1
3 Emitter
4 Collector
(
)
0.8
Slit width
5.1
MIN.
4.0
)
■ Absolute Maximum Ratings
(
Ta= 25˚C
)
Parameter Symbol Rating Unit
Forward current 50 mA
Input
Reverse voltage 6 V
Power dissipation 75 mW
Collector-emitter voltage 35 V
Output
Emitter-collector voltage 6 V
Collector current 40 mA
Collector power dissipation 75 mW
Total power dissipation 100 mW
Operating temperature - 25 to + 85 ˚C
Storage temperature - 40 to + 100 ˚C
*1
Soldering temperature
*1 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
I
F
V
R
P
V
CEO
V
ECO
I
C
P
C
P
tot
T
opr
T
stg
T
sol
260 ˚C
Soldering area
1mm or more
GP1L27
■ Electro-optical Characteristics
(
Ta = 25˚C
Parameter Symbol Conditions MIN. TYP. MAX. Unit
IF= 20mA
V
V
V
)
I
F
VCE= 2V, RL= 100 Ω
I
C
=3V
R
= 10V
CE
= 2V, IF= 1mA
CE
= 2mA, IC= 0.5mA
= 10mA
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P
P, P
tot
c
100
)
mW
(
80
75
60
40
Power dissipation P
20
-6
10
0.5 - mA
15
- - 1.0 V
V
V
I
I
CEO
CE(sat
t
t
F
R
r
f
Input
Forward voltage - 1.2 1.4 V
Reverse current - - 10 µ A
Output Collector dark current - - A
Transfercharacteristics
Collector Current Ic
Collector-emitter saturation voltage
Response time
Rise time - 80 400 µ s
Fall time - 70 350 µ s
Fig. 1 Forward Current vs. Ambient
Temperature
60
50
)
40
mA
(
F
30
20
Forward current I
10
)
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 3 Forward Current vs. Forward Voltage
500
T
= 75˚C
200
100
)
mA
(
F
Forward current I
a
50
20
10
5
2
1
0 0.5 1 1.5 2
50˚C
Forward voltage VF (V
25˚C
0˚C
- 25˚C
2.5 3
)
3.5 5
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
85
)
Fig. 4 Collector Current vs. Forward Current
20
VCE=2V
T
= 25˚C
)
15
mA
(
C
10
Collector current I
5
0
01
Forward current IF (mA
a
6234
)
GP1L27
Fig. 5 Collector Current vs.
Collector-emitter Voltage
28
26
T
= 25˚C
a
24
22
)
20
mA
(
18
C
16
14
12
10
8
Collector current I
6
4
2
0
02
Collector-emitter voltage VCE (V
P
)
C(MAX.
= 2.5mA
I
F
2mA
1.5mA
1mA
0.5mA
46810
35791
)
Fig. 7 Collector-emitter Saturation Voltage vs.
Ambient Temperature
1.0
)
V
0.8
(
)
sat
(
CE
0.6
V
IF= 2mA
= 0.5mA
I
C
0.4
0.2
Collector-emitter saturation voltage
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
)
Test Circuit for Response Time
Input
V
R
D
CC
R
L
Output
Input
Output
t
t
d
s
t
r
Fig. 6 Collector Current vs.
Ambient Temperature
)
mA
(
C
5
4
3
IF= 1mA
V
=2V
CE
2
Collector current I
1
0
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
)
Fig. 8 Response Time vs. Load Resistance
VCE=2V
200
= 10mA
I
C
= 25˚C
T
a
100
)
50
µ s
(
20
t
r
t
f
t
d
10
5
Response time
t
2
1
5 10 20 100 200
Load resistance R
s
50 500
)
(Ω
L
1000
2000
Fig. 9 Collector Dark Current vs.
Ambient Temperature
-4
10
V
5
CE
= 10V
-5
10
)
5
A
(
-6
10
CEO
10%
90%
t
f
5
-7
10
5
-8
10
5
-9
10
5
Collector dark current I
-10
10
5
-11
10
- 25 0 25 50 75 100
Ambient temperature Ta (˚C
)
GP1L27
Fig.10 Relative Collector Current vs.
Shield Distance (1
100
)
%
(
50
Relative collector current
0
-1
-2 2
Shield distance L (mm
)
IF= 1mA, VCE=2V
Ta= 25˚C
Shield
(
Detector center
01
L
0
)
Detector
+-
)
3
Fig.11 Relative Collector Current vs.
Shield Distance (2
100
)
%
(
50
Relative collector current
0
-1
-2
■ Precautions for Use
(1)
Please refrain from soldering under preheating and refrain from soldering by reflow.
(2)
As for other general cautions, refer to the chapter “Precautions for Use”.
)
IF= 1mA,VCE=2V
T
= 25˚C
a
L
Detector
1032
Shield distance L (mm
)
Shield
)
0
+
Detector center
(
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