Datasheet GP1600FSM12 Datasheet (DYNEX)

GP1600FSM12

GP1600FSM12

Single Switch IGBT Module

Advance Information

DS5451-1.2 October 2001

FEATURES

■ High Thermal Cycling Capability

■ 1600A Per Module

■ Non Punch Through Silicon

■ Isolated MMC Base with AlN Substrates

APPLICATIONS

■ High Reliability Inverters

■ Motor Controllers

■ Traction Drives

■ Resonant Converters

The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.

The GP1600FSM12 is a singlel switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.

The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.

KEY PARAMETERS
V
V
I

C

I

C(PK)

CES

CE(sat)

(typ) 2.7V
(max) 1600A
(max) 3200A

Fig.1 Single switch circuit diagram

Aux C

1200V

Aux C

G
Aux E

Aux E

External connection

C2C1

E1 E2

External connection

C1E1

ORDERING INFORMATION

Order As:

G

C2E2

GP1600FSM12

Note: When ordering, please use the complete part number.

Outline type code: F

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

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GP1600FSM12

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Test ConditionsSymbol

V

CES

V

GES

I

C

I

CM

P

max

V

isol

Collector-emitter voltage
Gate-emitter voltage

Collector current

Maximum power dissipation
Isolation voltage

VGE = 0V 1200

-

DC, T
1ms, T
T

case

= 82˚C 1600

case

= 112˚C A3200

case

= 25˚C (Transistor)

Commoned terminals to base plate.
AC RMS, 1 min, 50Hz

THERMAL AND MECHANICAL RATINGS

Symbol Conditions

Thermal resistance - transistor
Thermal resistance - diode DC junction to case

Thermal resistance - Case to heatsink
(per module)

Junction temperature

j

R

R
R

th(j-c)

th(j-c)

th(c-h)

T

Parameter

DC junction to case

Mounting torque 5Nm
(with mounting grease)

Transistor
Diode

Max.Parameter

Units

V
V±20
A

13.9

2500

Min.

Max.

-

-

-

kW

V

Units

o

C/kW9

o

C/kW20-

o

8-

C/kW

o

C150

o

C125-

T

stg

- Mounting - M6 Nm5-

Storage temperature range
Screw torque

-

–40

125

o

C

Electrical connections - M4 Nm2­Electrical connections - M8 Nm10-

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP1600FSM12

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(SAT)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Conditions

VGE = 0V, VCE = V
VGE = 0V, VCE = V

CES

CES

, T

VGE = ±20V, VCE = 0V

= 125˚C mA75--

case

CE

Min.

VGE = 15V, IC =1600A

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

VGE = 15V, IC = 1600A, T

DC
tp = 1ms A

= 125˚C

case

Diode forward voltage IF =1600A 2.42.2-

Input capacitance
Module inductance

IF =1600A, T
VCE = 25V, VGE = 0V, f = 1MHz

= 125˚C 2.52.3-

case

-

Typ.

-

-

-

-

Max.

-

-

-4.5IC = 120mA, VGE = V

1600

­3200

-

Units

mA2

8

µA

V6.5

3.52.7-

4.03.2-

V
V

A

V
V

180

-

-

-

nF

nH

-15

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

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GP1600FSM12

INDUCTIVE SWITCHING CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

E

OFF

t

d(on)

E

Q

Q

T

= 125˚C unless stated otherwise.

case

t

d(off)

t

E

OFF

t

d(on)

r

ON

r

Turn-off delay time
Fall time

f

Turn-off energy loss
Turn-on delay time ns
Rise time

Turn-on energy loss
Diode reverse recovery charge

rr

Diode reverse recovery charge

rr

Turn-off delay time
Fall time

f

Turn-off energy loss
Turn-on delay time ns
Rise time

Parameter Min. Typ. Max. Units

Conditions

IC = 1600A

V

= ±15V

GE

VCE = 600

R

= R

G(ON)

G(OFF)

L ~ 100nH

IF = 1600A

VR = 50%V

dIF/dt = 2000A/µs

IC = 1600A

VGE = ±15V

VCE = 600

R

= R

G(ON)

G(OFF)

L ~ 100nH

= 3.3Ω

,

CES

= 3.3Ω

-

1650

200

­350

-

1800

250
450

ns

ns

mJ

1750- 1600

450

-t
160

-

100-

-

1900

250

-

-

400

550

200

130

2100

300
500

ns

mJ
µC

-170-

µC

ns

ns

mJ

2000- 1750

500

-t

550

ns

E

Q

Q

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

ON

Turn-on energy loss
Diode reverse recovery charge

rr

Diode reverse recovery charge

rr

IF = 1600A

VR = 50%V

CES

,

dIF/dt = 2000A/µs

250

-

350

350250-

mJ

µC

µC-225-

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CURVES

0

50

100

150

200

250

300

350

400

450

0

200 400 600 800 1000 1200 1400 1600

Collector current, IC - (A)

Turn-on energy, E

on

- (mJ)

A : Rg = 7Ω
B : R

g

= 4.7Ω

C : R

g

= 3.3Ω

A

B

C

Conditions:
T

case

= 125˚C,

V

CE

= 600V,

V

GE

= 15V

GP1600FSM12

Vge = 20/15/12/10V

3200

Common emitter

= 25˚C

T

2800

case

2400

- (A)

2000

C

1600

1200

Collector current, I

800

400

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

Fig.5 Typical output characteristics Fig.6 Typical output characteristics

Vge = 20/15/12/10V

3200

Common emitter
T

= 125˚C

case

2800

2400

- (A)

2000

C

1600

1200

Collector current, I

800

400

0

0 1.0 2.0 3.0 4.0 5.0

Collector-emitter voltage, V

ce

- (V)

400

350

300

250

- (mJ)

on

200

150

Turn-on energy, E

100

50

Conditions:

= 25˚C,

T

case

VCE = 600V,
VGE = 15V

A

B
C

A : Rg = 7Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω

0

0 200 400 600 800 1000 1200 1400 1600

Collector current, I

Fig.7 Typical turn-on energy vs collector current Fig.8 Typical turn-on energy vs collector current

- (A)

C

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10

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GP1600FSM12

600

500

Conditions:
T

= 25˚C,

case

= 600V,

V

CE

V

= 15V

GE

600

500

Conditions:
T

= 125˚C,

case

V

= 600V,

CE

= 15V

V

GE

A

A

400

- (mJ)

off

300

B

C

200

Turn-off energy, E

100

A : Rg = 3.3Ω
B : R

g

C : R

g

0

0 200 400 600 800 1000 1200 1400 1600

Collector current, I

- (A)

C

= 4.7Ω
= 7Ω

400

- (mJ)

off

300

200

Turn-off energy, E

100

0

0 200

600 800 1000 1200 1400 1600

400

Collector current, I

- (A)

C

B
C

A : Rg = 7Ω
B : R
C : R

Fig.9 Typical turn-off energy vs collector current Fig.10 Typical turn-off energy vs collector current

= 4.7Ω

g

= 3.3Ω

g

120

100

- (mJ)

80

off(Diode)

Conditions:
V

= 600V,

CE

= 15V,

V

GE

R

= 3.3Ω

g

T

case

= 125˚C

2500

2000

1500

t

d(off)

t

d(on)

60

T

= 25˚C

case

40

Diode turn-off energy, E

20

0

0 200 400 600 800 1000 1200 1400 1600

Collector current, I

- (A)

C

1000

Switching times - (ns)

500

t

f

t

r

0

0 200 400 600 800 1000 1200 1400 1600

Collector current, I

- (A)

C

Fig.11 Typical diode turn-off energy vs collector current Fig.12 Typical switching times

Conditions:

= 125˚C,

T

case

V

= 600V

CE

= 15V

V

GE

R

= 3.3Ω

g

6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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GP1600FSM12

3200

3600
3400

2800

2400

- (A)

2000

F

Tj = 25˚C

Tj = 125˚C

3200
3000
2800
2600
2400

- (A)

2200

C

2000

1600

1800
1600

1200

Forward current, I

800

400

0

0 0.5 1 1.5 2 2.5 3 3.5

Forward voltage, V

- (V)

F

1400
1200

Collector current, I

1000

800

Conditions:

600
400
200

V

GE

R

g

T

case

= ±15V

= 3.3Ω

= 125˚C

0

0 200 400 600 800 1000 1200

Collector-emitter voltage, V

Fig.13 Diode typical forward characteristics Fig.14 Reverse bias safe operating area

CE

- (V)

10000

IC max. (single pulse)

I

C

1000

- (A)

C

100

max. DC (continuous)

tp = 1ms

Collector current, I

10

1

1 10 100 1000 10000

Collector-emitter voltage, V

ce

- (V)

Fig.15 Forward bias safe operating area Fig.16 Transient thermal impedance

50µs

100µs

100

Diode

- (˚C/kW)

th(j-c)

10

Transistor

1

Transient thermal impedance, Z

0.1

0.001 0.01 0.1 1 10
Pulse width, t

- (s)

p

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10

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GP1600FSM12

3000
2800
2600
2400
2200
2000

- (A)

C

1800
1600
1400
1200
1000

Collector current, I

800
600
400
200

0

25 35 45 55 65 75 85 95 105 115 125

Case temperature, T

case

- (˚C)

Fig.17 DC current rating vs case temperature

8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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GP1600FSM12

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

16

2.5

18.5

6x M4

Aux C

14.5

62

5

6

Aux E

G

11

35

15

15

20

62

57

43.3 18
57

6x Ø7

65

65

C1E1

C2E2

4x M8

38

28

5

Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3

Auxiliary and Gate pin plastic hole depth (M4) = 9± 0.3

Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1

Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1

Nominal weight: 1050g

Module outline type code: F

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10

140

31.5

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GP1600FSM12

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

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Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

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© Dynex Semiconductor 2001 Publication No. DS5451-1 Issue No. 1.2 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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