Datasheet GP1200FSS18 Datasheet (DYNEX)

GP1200FSS18

GP1200FSS18

Single Switch IGBT Module

Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001

FEATURES

■ Non Punch Through Silicon

■ Isolated Copper Baseplate

■ Low Inductance Internal Construction

■ 1200A Per Module

APPLICATIONS

■ High Power Inverters

■ Motor Controllers

■ Induction Heating

■ Resonant Converters

The powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.

The GP1200FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.

KEY PARAMETERS
V
V
I

C

I

C(PK)

CES
CE(sat)

(typ) 3.5V
(max) 1200A
(max) 2400A

Aux C

G
Aux E

Fig. 1 Single switch circuit diagram

1800V

External connection

C2C1

E1 E2

External connection

The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.

C1E1

ORDERING INFORMATION

Aux C

Aux E

Order As:

GP1200FSS18

Note: When ordering, please use the whole part number.

G

C2E2

Outline type code: F

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10

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GP1200FSS18

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T

= 25˚C unless stated otherwise

case

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(j-c)

Thermal resistance - transistor

Thermal resistance - diode

Parameter

Test Conditions

= 0V

V

GE

-

= 50˚C

T

case

1ms, T

T

case

= 110˚C

case

= 25˚C, Tj = 150˚C

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

Min.

-

-

Max.

1800

±20

1200

2400

8.5

4000

Max.

15

30

Units

V

V

A

A

kW

V

Units

˚C/kW

˚C/kW

junction to case

R

th(c-h)

Thermal resistance - case to heatsink (per module)

Mounting torque 5Nm

-

˚C/kW

8

(with mounting grease)

T

Junction temperature

j

Transistor

Diode

T

stg

-

Storage temperature range

Screw torque

Mounting - M6

-

Electrical connections - M4

Electrical connections - M8

-

-

–40

-

-

-

150

125

125

5

2

10

˚C

˚C

˚C

Nm

Nm

Nm

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise.

case

GP1200FSS18

Symbol

I

CES

I

GES

V

GE(TH)

V

CE(sat)

I

F

I

FM

V

F

C

ies

L

M

Parameter

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

Diode maximum forward current

Diode forward voltage

Input capacitance

Module inductance

Test Conditions

= 0V, VCE = V

V

GE

VGE = 0V, VCE = V

= ±20V, VCE = 0V

V

GE

= 60mA, VGE = V

I

C

CES

CES

, T

CE

VGE = 15V, IC = 1200A

= 15V, IC = 1200A, T

V

GE

DC

= 1ms

t

p

= 1200A

I

F

= 1200A, T

I

F

= 25V, VGE = 0V, f = 1MHz

V

CE

= 125˚C

case

-

= 125˚C

case

case

= 125˚C

Min.

-

-

-

4.5

-

-

-

-

-

-

-

-

Typ.

-

-

-

5.5

3.5

4.3

-

-

2.2

2.3

135

20

Max.

1

25

4

6.5

4

5

1200

2400

2.5

2.6

-

-

Units

mA

mA

µA

V

V

V

A

A

V

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10

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GP1200FSS18

ELECTRICAL CHARACTERISTICS

T

= 25˚C unless stated otherwise

case

Symbol

t

d(off)

t

f

E

OFF

t

d(on)

t

r

E

ON

Q

rr

I

rr

E

REC

T

= 125˚C unless stated otherwise

case

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

Diode reverse recovery charge

Diode reverse current

Diode reverse recovery energy

Symbol

Parameter

Parameter

Test Conditions

= 1200A

I

C

= ±15V

V

GE

= 900V

V

CE

R

G(ON)

= R

G(OFF)

= 2.2Ω

L ~ 50nH

= 1200A, VR = 50% V

I

F

/dt = 4500A/µs

dI

F

Test Conditions

CES

Min.

,

Min.

Typ.

1050

-

130

-

550

-

300

-

250

-

450

-

250

-

500

-

180

-

Typ.

Max.

1250

200

700

400

400

650

350

Max.

Units

ns

ns

mJ

ns

ns

mJ

µC

-

-

A

mJ

Units

E

E

t

t

E

d(off)

d(on)

Q

I

REC

t

f

OFF

t

r

ON

rr

= 1200A

R

G(ON)

I

C

= ±15V

V

GE

= 900V

V

CE

= R

G(OFF)

L ~ 50nH

= 2.2Ω

Turn-off delay time

Fall time

Turn-off energy loss

Turn-on delay time

Rise time

Turn-on energy loss

rr

Diode reverse recovery charge

Diode reverse current

IF = 1200A, VR = 50% V

/dt = 4000A/µs

dI

F

CES

,

Diode reverse recovery energy

1150

-

150

-

650

-

400

-

300

-

650

-

425

-

600

-

250

-

1350

300

850

550

450

800

550

ns

ns

mJ

ns

ns

mJ

µC

-

-

A

mJ

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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TYPICAL CHARACTERISTICS

GP1200FSS18

Vge = 20/15/12V

2400

Common emitter

2200

T

= 25˚C

case

2000
1800
1600

- (A)

c

1400
1200
1000

800

Collector current, I

600

400

200

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

Collector-emitter voltage, V

ce

- (V)

Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics

V

= 10V

ge

2400

Vge = 20/15/12V

Common emitter

2200

T

= 125˚C

case

2000
1800
1600

- (A)

C

1400
1200
1000

800

Collector current, I

600

400

200

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

Collector-emitter voltage, V

ce

- (V)

Vge = 10V

1.0

0.9

0.8

T

= 125˚C

case

V

= 15V

GE

V

= 900V

CE

= 2.2Ω

R

G

L = 50nH

2.00

1.75

1.50

T

= 125˚C

case

V

= 15V

GE

V

= 900V

CE

= 1200A

I

C

L = 50nH

0.7

0.6

0.5

Energy - (J)

0.4

0.3

E

OFF

E

ON

E

REC

1.25

1.00

Energy - (J)

0.75

0.50

E

OFF

0.2

0.1

0

0800200 400

600 12001000

Collector current, I

- (A)

C

0.25

0

0412

38567 109

Gate resistance, R

- (Ohms)

G

Fig. 5 Typical switching energy vs collector current Fig. 6 Typicalswitching energy vs gate resistance

E

ON

E

REC

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10

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GP1200FSS18

2400

3000

2200

2000

Tj = 25˚C

2500

1800
1600

- (A)

F

1400

1200

Tj = 125˚C

2000

- (A)

C

1500

1000

800

Foward current, I

600

400

1000

Collector current, I

T

= 125˚C

case

V

= ±15V

ge

500

R

= 2.2Ω

g(off)

200

0

0

0.5 1.0 1.5

2.0

Foward voltage, V

2.5 3.0 3.5

- (V)

F

0

0 400 800

Collector-emitter voltage, V

Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area

1200

ce

- (V)

1600

2000

10000

1000

- (A)

C

I

C max

(DC)

100

Collector current, I

10

1

1 10 100 1000 10000

Collector emitter voltage, V

ce

- (V)

Fig. 9 Forward bias safe operating area Fig. 10 Transient thermal impedance

= 50µs

t

p

t

= 100µs

p

= 1ms

t

p

100

- (°C/kW )

th (j-c)

10

1

Transient thermal impedance, Z

0.1
1 10 1000100

Pulse width, t

- (ms)

p

Diode

Transistor

10000

6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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1800

1600

1400

1200

- (A)

C

1000

800

600

DC collector current, I

400

200

GP1200FSS18

0

0 20 40 60 80 100 120 140 160

Case temperature, T

case

- (˚C)

Fig. 11 DC current rating vs case temperature

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10

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GP1200FSS18

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

16

2.5

18.5

6x M4

Aux C

14.5

62

5

6

Aux E

G

11

35

15

15

20

62

57

43.3 18
57

6x Ø7

65

65

C1E1

C2E2

4x M8

38

28

5

Nominal weight: 1600g

Module outline type code: F

8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

140

31.5

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ASSOCIATED PUBLICATIONS

Title Application Note

Number

Electrostatic handling precautions AN4502
An introduction to IGBTs AN4503
IGBT ratings and characteristics AN4504
Heatsink requirements for IGBT modules AN4505
Calculating the junction temperature of power semiconductors AN4506
Gate drive considerations to maximise IGBT efficiency AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508
Guidance notes for formulating technical enquiries AN4869
Principle of rating parallel connected IGBT modules AN5000
Short circuit withstand capability in IGBTs AN5167
Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384

POWER ASSEMBLY CAPABILITY

GP1200FSS18

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10

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GP1200FSS18

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.

Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontarion, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Central Europe Tel: [phone]. Fax: [phone]
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SALES OFFICES

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Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5260-3 Issue No. 3.1 January 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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