Page 1
■ Electrical Characteristics (Ta = 25˚C)
GaAs MMICs GN8061
GN8061
GaAs IC
For semiconductor laser drive
■ Features
●
High-speed switching
●
High output
●
Pulse current and DC bias current can be controlled.
■ Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power supply voltage
Pin voltage
Power current
Output current
Allowable power dissipation
Channel temperature
Storage temperature
Operating ambient temperature
Symbol
V
DD
V
SS
V
Ib1
* 1
V
Ib2
V
IN
V
Ip
* 5
V
OUT
* 1
I
DD
* 4
I
SS
I
OUT
P
D
* 2
T
ch
T
stg
T
opr
* 3
Rating
6
– 6
6
0.5
– 0.5 to V
DD
–1.5
1.5 to 6
6
55
40
225
700
150
– 55 to +150
–10 to + 75
Unit
V
V
V
V
V
V
V
mA
mA
mA
mW
˚C
˚C
˚C
Parameter
Pulse output current
Bias output current
Supply current
Input voltage
Rise time
Fall time
Test circuit
1
1
2
2
2
2
2
3
3
Condition
V
IN
= 2.0V, V
Ib2
= – 5V
V
IN
= 0.4V, V
Ib2
= – 5V
I
P
= 0, V
Ib1
= 5V, V
Ib2
= 0
I
P
= 0, V
Ib1
= 0, V
Ib2
= 0
I
P
= 0, V
Ib1
= 5V, V
Ib2
= – 5V
V
Ib1
= 5V, V
Ib2
= – 5V, VIN= 0.4V
I
P
= 0
V
Ib1
= 0, V
Ib2
– 5V, IP =100mA
Min
100
80
2.5
Typ
120
1
100
1
0.05
35
25
Max
5
5
0.1
55
40
0.4
7
5
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
ns
ns
Unit : mm
1 : GND
2 : V
Ib1
3 : V
Ib2
4 : OUT
5 : V
IP
6 : V
DD
7 : V
IN
8 : V
SS
8-Lead Plastic DIL Package
* 1 Do not apply the voltage higher than the set VDD.
* 2 Guaranteed for the unit in the natural atmosphere.
* 3 IC circuit functioning range. Note however that the electrical characteristics shown
at Ta= 25˚C is not guaranteed.
* 4 IDD is a current when the pulse output current and bias output current are zero.
* 5 Voltage when the constant current source has been connected.
Symbol
I
pmax.
I
pmin.
I
bmax.
I
bmin. 1
I
bmin. 2
I
DD
* 1
I
SS
V
IH
V
IL
t
r
* 2
t
f
* 2
Note : Following condition is applied unless otherwise specified: VDD= 5V, VSS= – 5V, V
Ib1
= 0V, V
Ib2
= 0V
Set the supply current of constant current source to IP=120mA and load resistance to RL=10Ω
0.51.3typ.
4.0max.
0.7min.
4.5max.
0.35max.
6.4±0.2
7.62±0.2
2.54±0.25
10max.
0 to 15˚
1
2
3
4
8
7
6
5
Page 2
10µS
2
µS
2.5V min.
0.4V max.
*
The rise/fall time of the input signal
is 2ns (10 to 90%)
Output waveform
Input signal
GaAs MMICs GN8061
* 1 The current value to be supplied from the 5V power supply is a total sum of this value plus the pulse output current and bias output current.
* 2 Waveform of input and output signals
Test circuit 1 Test circuit 2
Test circuit 3
C1 : 0.1µF
C2 : 3.3µF
C3 : 2200pF
R1 : 10Ω
R2 : 50Ω
V
IN
I
P
=120mA
–5V
–5V
1234
8765
0V
5V
C1 C2
–
+
C2
+
–
C2
R1
C1
+
–
5V
C1
A
0.4V
I
P
=0mA
–5V
V
Ib2
1234
8765
V
Ib1
5V
C1 C2
–
+
C2
+
–
C2
R1
C1
+
–
5V
C1
A
PULSE
GENERATOR
I
P
=100mA
–5V
–5V
1234
8765
5V
C1
C3
C3
C2
R2
–
+
C2
+
–
C2
R1
FET PROBE
C1
+
–
5V
C1
90%
t
f
t
r
10%
t
r ··· 10% to 90%
t
f ··· 90% to 10%
Page 3
GaAs MMICs GN8061
■ Block Diagram
■ Caution for Handling
1) The recommended VIN voltage is 2.5 to 3V for [H] and
0 to 0.4V for [L].
2) Do not apply VIN while the power supply is OFF.
3) For the current source to be connected to the VIP pin,
use a Si bipolar transistor as shown in the circuit diagram.
(Example: 2SD874)
To connect a resistor to the emitter or collector, use a
resistor of a few ohm. The use of higher resistor may
cause large change in the voltage at the VIP pin, and
may make the output wav eform distortion. (See the pulse
output current control example).
To use another current control circuit, set so that the V
IP
pin voltage becomes around 2V.
4) When mounting, minimize the connection distance be-
tween the semiconductor laser and IC, and use the chip
parts (C, R) of less parasitic effects.
5) Attention to damage by the power surge (see the ex-
ample connection of the pin protection circuit).
During handling, take care to ground the human body
and solder iron tip.
6) The current value of the current source connected to the
VIP pin should be zero to protect the semiconductor laser when the power supply is turned ON and OFF.
When the power supply is ON, mak e VSS to rise earlier
than VDD. When the po wer supply is OFF, make VDD to
fall earlier than VSS. When VDD= 5V, VSS= 0 even
transitionary, the current of about 30mA flows through
the semiconductor laser.
7) Pay attention to release the heat.
Example of pulse output current control circuit
Connection example of pin protection circuit
VIN
V
SS
VSSV
IP
V
SS
V
SS
V
SS
V
Ib1
(0 to 5V)
V
DD
V
DD
+
5V
OUT
LASER DIODE
OUTSIDE GN8061
INSIDE GN8061
from CONTROL
CIRCUIT
V
DD
V
Ib2
(–5 to 0V)
–5.0V
100 to 200W
3k to 5kW
200 to 2kΩ 50Ω
5.0V
GN8061
GND
V
Ib1
V
Ib2
OUT
V
SS
V
IN
V
DD
V
IP
MA3068(VZ=6.8V,Cd=85pF,RZ=6Ω)
GN8061
GND
V
Ib1
I
B
V
EE
=–
5 to 0V
I COLLECTOR
V
Ib2
OUT
V
SS
V
IN
V
DD
V
IP
5Ω
0.22mF
–
+
Page 4
GaAs MMICs GN8061
IP – V
SS
tr – I
P
tf – I
P
PD – Ta Ib – V
lb2
IP – V
DD
tr – V
DD
tf – V
DD
tr – V
SS
0
200
400
600
800
1000
0
50 100 150 200
Ambient temperature Ta (˚C
)
Allowable power dissipation P
D
(
mW
)
0
40
80
120
160
200
0 –0.4 –0.8 –1.2 –1.6 –2.0
Pin voltage V
Ib2
(V
)
Bias output current I
b
(m
A
)
VDD=5V
V
SS
=–5V
V
Ib1
=5V
I
P
=0
0
20
40
60
80
100
120
0123456
Supply voltage V
DD
(V
)
Pulse output current I
P
(m
A
)
VSS=–5V
V
Ib1
=0
V
Ib2
=–5V
I
P
=100mA
(at V
DD
=5V)
I
P
max(VIN=2.5V)
I
P
min(VIN=0.4V)
0
20
40
60
80
100
120
0 –1–2–3–4–5–6
Supply voltage V
SS
(V
)
Pulse output current I
P
(m
A
)
VDD=5V
V
Ib1
=0
V
Ib2
=–5V
I
P
=100mA(at VSS=–5V)
I
P
max(VIN=2.5V)
I
P
min(VIN=0.4V)
0
1
2
3
4
5
6
0 50 100 150
Pulse output current I
P
(mA
)
Rise time t
r
(ns)
VDD=5V
V
SS
=–5V
V
Ib1
=0
V
Ib2
=–5V
0
1
2
3
4
5
6
0 50 100 150
Pulse output current I
P
(mA
)
Fall time t
f
(ns)
VDD=5V
V
SS
=–5V
V
Ib1
=0
V
Ib2
=–5V
0
2
4
6
8
10
012345
Supply voltage V
DD
(V
)
Rise time t
r
(ns)
VSS=–5V
V
Ib1
=0
V
Ib2
=–5V
I
P
=50mA
0
2
4
6
8
10
012345
Supply voltage V
DD
(V
)
Fall time t
f
(ns)
VSS=–5V
V
Ib1
=0
V
Ib2
=–5V
I
P
=50mA
0
2
4
6
8
10
0–1–2–3–4–5
Supply voltage V
SS
(V
)
Rise time t
r
(ns)
VDD=5V
V
Ib1
=0
V
Ib2
=–5V
I
P
=100mA
Page 5
GaAs MMICs GN8061
tf – V
SS
0
2
4
6
8
10
0–1–2–3–4–5
Supply voltage V
SS
(V
)
Fall time t
f
(ns)
VDD=5V
V
Ib1
=0
V
Ib2
=–5V
I
P
=100mA
Loading...