Datasheet GMF05C-HS3 Datasheet (VISHAY)

Vishay Semiconductors

5-Line ESD Protection Diode Array in LLP75-6A

Features

• Ultra compact LLP75-6A package

• 5-line ESD-protection

• Surge immunity acc. IEC 61000-4-5
I

> 12 A

PPM

• Low leakage current I

< 1 µA

R

• ESD-immunity acc. IEC 61000-4-2

± 30 kV contact discharge
± 30 kV air discharge

• Working voltage range V

RWM

= 5 V

• Lead (Pb)-free component

• "Green" molding compound

• Nonmagnetic

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

e3

19957

1

GMF05C-HS3

54

6

2

1

3

19956

Marking (example only)

XX
YY

21001

dot = Pin 1 marking
XX = Date code
YY = Type code (see table below)

Ordering Information

Device name Ordering code

GMF05C-HS3 GMF05C-HS3-GS08 3000 15000

Taped units per reel

(8 mm tape on 7" reel)

Minimum order quantity

Package Data

Device name

GMF05C-HS3 LLP75-6A F5 5.2 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

Package

name

Type
code

Weight

Molding

compound

flammability rating

Moisture sensitivity level Soldering conditions

Document Number 85654

Rev. 1.7, 25-Mar-08

For technical support, please contact: [e-mail]

www.vishay.com

1

GMF05C-HS3

Vishay Semiconductors

Absolute Maximum Ratings

Rating Test condition Symbol Value Unit

Peak pulse current

Peak pulse power

ESD immunity

Operating temperature junction temperature

Storage temperature

BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2);

acc. IEC 61000-4-5; t

BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2);

acc. IEC 61000-4-5; t

acc. IEC61000-4-2; 10 pulses

BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2)

= 8/20 µs; single shot

p

= 8/20 µs; single shot

p

contact

discharge

air

discharge

BiAs-Mode (5-line Bidirectional Asymmetrical protection mode)

With the GMF05C-HS3 up to 5 signal- or data-lines (L1 - L5) can be protected against voltage transients. With
pin 2 connected to ground and pin 1; 3 up tp pin 6 connected to a signal- or data-line which has to be protected.
As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum
Reverse Working Voltage (V
the ground line. The protection device behaves like an open switch.

As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.

Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
the ground level.

Due to the different clamping levels in forward and reverse direction the GMF05C-HS3 clamping behaviour is

Bi

directional and Asymmetrical (BiAs).

) the protection diode between data line and ground offer a high isolation to

RWM

) is defined by the BReakthrough Voltage (VBR) level

C

) clamps the negative transient close to

F

I

PPM

P

PP

V

ESD

V

ESD

T

- 55 to + 125 °C

J

T

- 55 to + 150 °C

STG

12 A

200 W

± 30 kV

± 30 kV

L1

L2

20739

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2

1

2

3

For technical support, please contact: [e-mail]

5

4

3

L5

L4

L3

Document Number 85654

Rev. 1.7, 25-Mar-08

GMF05C-HS3

Vishay Semiconductors

Electrical Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

GMF05C-HS3

BiAs mode: each input (pin 1; 3 - pin 6) to ground (pin 2)

Parameter Test conditions/remarks Symbol Min. Ty p . Max. Unit

Protection paths number of line which can be protected N lines 5 lines

at I

Reverse working voltage

Reverse current

Reverse breakdown voltage

Reverse clamping voltage

Forward clamping voltage

Capacitance

= 12 A acc. IEC 61000-4-5 V

at I

PP

at I

= 1 A acc. IEC 61000-4-5 V

PP

at I

= 12 A acc. IEC 61000-4-5 V

F

at I

= 1 A acc. IEC 61000-4-5 V

PP

at V

at V

= 1 µA V

R

= V

at V

R

at I

= 0 V; f = 1 MHz C

R

= 2.5 V; f = 1 MHz C

R

= 5 V I

RWM

= 1 mA V

R

RWM

R

BR

C

C

F

F

D

D

5V

< 0.1 1 µA

68V

12.5 V

7.8 9.5 V

5.5 V

1.5 V

126 150 pF

76 pF

If a higher surge current or Peak Pulse current (IPP) is needed, some protection diodes in the GMF05C-HS3
can also be used in parallel in order to "multiply" the performance.
If two diodes are switched in parallel you get

• double surge power = double peak pulse current (2 x I

PPM

)

• half of the line inductance = reduced clamping voltage

• half of the line resistance = reduced clamping voltage

• double line Capacitance (2 x C

• double Reverse leakage current (2 x I

L1 L2

)

D

)

R

1

2

3

6

5

4

L3

20740

Document Number 85654

Rev. 1.7, 25-Mar-08

For technical support, please contact: [e-mail]

www.vishay.com

3

GMF05C-HS3

Vishay Semiconductors

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

120 %

100 %

ESD

Discharge Current I

20557

80 %

60 %

53 %

40 %

27 %

20 %

0 %

- 10 0 10 20 30 40 50 60 70 80 90 100

rise time = 0.7 ns to 1 ns

Time (ns)

Figure 1. ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330 Ω/150 pF)

8 µs to 100 %

20 µs to 50 %

I

100 %

80 %

60 %

PPM

40 %

20 %

100

BiAs-mode

10

1

(mA)

F

I

0.1

0.01

0.001

0.5 0.6 0.7 0.8 0.9

21205

VF (V)

Figure 4. Typical Forward Current IF vs. Forward Voltage V

7

6

5

4

(V)

R

3

V

2

1

BiAs-mode

F

0 %

010203040

20548

Time (µs)

Figure 2. 8/20 µs Peak Pulse Current Wave Form

(acc. IEC 61000-4-5)

140

f = 1 MHz

120

100

80

(pF)

D

60

C

40

20

0

0123456

21204

Figure 3. Typical Capacitance C

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BiAs-mode

VR (V)

vs. Reverse Voltage V

D

For technical support, please contact: [e-mail]

4

0

0.01 0.1 1 10 100 1000 10000

21206

IR (µA)

Figure 5. Typical Reverse Voltage VR vs.

Reverse Current I

14

12

10

8

(V)

C

V

6

4

2

0

21207

R

Figure 6. Typical Peak Clamping Voltage VC vs.

BiAs-mode

Measured
acc. IEC 61000-4-5
(8/20 µs - wave form)

02468 10 12 14 16

Peak Pulse Current I

IPP (A)

R

V

C

PP

Document Number 85654

Rev. 1.7, 25-Mar-08

80

acc. IEC 61000-4-2

60

40

20

(V)

0

C-ESD

V

- 20

- 40

- 60

- 10 0 10 20 30 40 50 60 70 8090

21208

+ 8 kV

contact discharge

t (ns)

Figure 7. Typical Clamping Performance at + 8 kV

Contact Discharge (acc. IEC 61000-4-2)

60

acc. IEC 61000-4-2

40

20

- 8 kV

contact discharge

GMF05C-HS3

Vishay Semiconductors

0

(V)

- 20

C-ESD

V

- 40

- 60

- 80

- 10 0 10 20 30 40 50 60 70 8090

21209

t (ns)

Figure 8. Typical Clamping Performance at - 8 kV

Contact Discharge (acc. IEC 61000-4-2)

250

200

150

100

50

(V)

0

C-ESD

- 50

V

- 100

- 150

- 200

- 250
0 5 10 15 20 25 30

21210

negative
discharge

positive
discharge

acc. IEC 61000-4-2
contact discharge

V

ESD

V

(kV)

C-ESD

Figure 9. Typical Peak Clamping Voltage at ESD

Contact Discharge (acc. IEC 61000-4-2)

Document Number 85654

Rev. 1.7, 25-Mar-08

For technical support, please contact: [e-mail]

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5

GMF05C-HS3

Vishay Semiconductors

Package Dimensions in millimeters (inches): LLP75-6A

18058

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6

For technical support, please contact: [e-mail]

Document Number 85654

Rev. 1.7, 25-Mar-08

GMF05C-HS3

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or

unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,

and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated

with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 85654

Rev. 1.7, 25-Mar-08

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7

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1