Page 1
2009. 3. 5 1/3
SEMICONDUCTOR
TECHNICAL DATA
GM400HB06CT
Revision No : 0
TENTATIVE
MAXIMUM RATING (@Ta=25℃ Per Leg)
+
_
+
_
14 0.2
+
_
18 0.2
+
_
14 0.2
+
_
18 0.2
+
_
14 0.2
+
_
18 0.2
30.45 0.2
+
_
15 0.2
+
_
27 0.2
+
_
6.5 0.2
+
_
31.6 0.2
+
_
62.5 0.2
OUTLINE DRAWING
Internal Circuit
C2E1
E2
G2
E2
C1
E1
G1
Unit : mm
93 0.2
M6
+
_
108.5 0.2
+
_
108.5 0.2
+
_
28 0.2
+
_
28 0.2
+
_
+
_
1.3 0.2
G2
E2
E1
G1
600V/400A 2 IN ONE PACKAGE
FEATURES
·IGBT New Technology
·Low V
CE(sat)
·Low Turn-off losses
·Short tail current
·Positive temperature coefficient
APPLICATION
·AC & DC Motor controls
·General purpose inverters
·Optimized for high current inverter
·Servo Controls
·UPS, Robotics
CHARACTERISTIC SYMBOL RATING UNIT
Collector-to-Emitter Voltage
@T
C
=25℃
V
CES
600 V
Gate-Emitter Voltage
V
GES
±20
V
Continuous Collector Current
@T
C
=25℃
I
C
500
A
@T
C
=125℃
400
Pulsed Collector Current
@T
C
=25℃
I
CP
800 A
Diode Continuous Forward Current
@T
C
=25℃
I
F
500
A
@T
C
=125℃
400
Diode Maximum Forward Current
@T
C
=25℃
I
FM
800 A
Short Circuit Test
@T
C
=25℃
t
P
10
㎲
@T
C
=125℃
8
Isolation Voltage test AC @ 1 minute
V
iso
2500 V
Junction Temperature
T
j
-40 ~ 150
℃
Storage Temperature
T
stg
-40 ~ 125
℃
Weight of Module Weight 360 g
Mounting Torque with screw : M6
M
d
4.0 N.m
Terminal Connection torque : M6 4.0 N.m
Page 2
2009. 3. 5 2/3
GM400HB06CT
Revision No : 0
ELECTRICAL CHARACTERISTICS (IGBT/DIODE)(@Ta=25℃ Unless otherwise specified)
THERMAL CHARACTERISTIC
STATIC CHARACTERISTICS (@Tj=25℃ Unless otherwise specified)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-to-Emitter Saturation Volatge
V
CE(ON)IC
= 400A, VGE=15V
1.05 1.50 1.95
V
Gate Threshold Voltage
V
GE(th)IC
= 8mA, VCE=V
GE
5.0 5.8 6.5
Zero Gate Voltage Collector Current
I
CES
VGE=0V, VCE=600V
- - 5.0 mA
Gate-to-Emitter Leakage Volatge
I
GES
VCE=0V, VCE=20V
- - 400 nA
Diode Forward Voltage Drop
V
FM
IF = 400A, VGE=0V
- 1.6 2.0 V
Integrated gate resistor
R
GINT
- - 1.0 -
Ω
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
IGBT
Input Capacitance
C
ies
VCE=25V, VGE=0V, f=1MHz
- 24670 -
nF
Ouput Capacitance
C
oes
- 1540 -
Reverse Transfer Capacitance
C
res
- 732 -
Turn-On Delay Time
t
d(on)
Inductive Switching 125℃
VCC=300V, IC=400A,
V
GE
=±15V,RG=2.2Ω
-70-
ns
Rise Time
t
r
-25-
Turn-Off Delay Time
t
d(off)
- 260 -
Fall Time
t
r
-60-
DIODE
Maximum Peak Repetitive Reverse Voltage
V
RRM
- 600 - - V
Maximum Reverse Ieakage current
I
RM
VR=600V
- - 350
㎂
Reverse Recovery Time
t
rr
IF=400A, V
R
=300V, di/dt=4000A/㎲
- 125 - ns
Reverse Recovery Charge
Q
rr
-20-
μC
CHARACTERISTIC SYMBOL MIN TYP MAX. UNIT
Junction to Case (IGBT Part, Per 1/2 Module)
R
th(j-c)
- - 0.12
℃/W
Junction to Case (Didoe Part, Per 1/2 Module)
R
th(j-c)
- - 0.24
Case to Heat Sink (Conductive grease applied)
R
th(j-s)
- 0.03 -
※ Data and specifications subject to change without notice.
Page 3
2009. 3. 5 3/3
GM400HB06CT
Revision No : 0
Fig 1. Typ. IGBT Output Characteristics IGBT
(A)
C
I
800
720
640
560
480
400
320
240
160
Tvj=25
C
Tvj=125
C
Tvj=150
C
80
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE (V)
Fig 3. Typ. Transfer Characteristics IGBT
(A)
C
I
800
720
640
560
480
400
320
240
160
80
0
Tvj=25
C
Tvj=125
C
Tvj=150
C
56789 1110
Fig 2. Typ. IGBT Out Characteristics
(A)
C
I
800
720
640
560
480
400
320
240
160
80
VGE=19V
VGE=17V
VGE=15V
VGE=13V
VGE=11V
VGE=9V
0
0 0.5 1.0 1.5 2.5 3.5 4.53.02.0 4.0 5.0
VCE (V)
Fig 4. Reverse Bias Operating Area IGBT
900
800
700
600
500
(A)
C
400
I
300
200
100
V
=15V, RG=2.4Ω, Tj=125
GE
0
0 200 400 600100 300 500 700
C
V
VGE (V)
CE
(V)
Fig 5. Forward Characteristics of Diode IGBT
800
720
640
560
480
400
(A)
F
I
320
240
160
80
Tvj=25
C
Tvj=125
C
Tvj=150
C
0
0 0.2 0.6 1.00.4 0.8 1.2 1.4 2.01.6 1.8
VF (V)
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