Page 1
桂林斯壯微電子有限責任公司
GM 2301
SOT-23 場效應晶體管 (SOT-23 Field Effect Transistors)
P
P
P
P -Channel
-Channel
-Channel
-Channel Enhancement-Mode
Enhancement-Mode
Enhancement-Mode
Enhancement-Mode MOS
MOS
MOS
MOS FETs
FETs
FETs
FETs
P
P
P
P 沟道增强型 MOS
MOS
MOS
MOS 场效应管
■ MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS 最大額定值
Characteristic
特性參數
Symbol符號Max
最大值
Unit
單位
Drain - Source V oltage
漏 極 - 源 極電壓
B V
DSS
-20
V
Gate - Source V oltage
栅 極 - 源 極電壓
V
GS
+ 10
V
Drain Current (continuous)
漏 極電流 - 連續
I
D
-2.8
A
Drain Current (pulsed)
漏 極電流 - 脉冲
I
DM
-10
A
Total Device Dissipation
總耗散功率
T
A
= 25 ℃ 環境溫度爲 25 ℃
PD900
m W
Junct io n 結溫
T
J
150℃Storage Temperature 儲存溫度
T
stg
-55to+15 0
℃
GM
GM
GM
GM 2301
2301
2301
2301 =
=
=
= A1
A1
A1
A1
Guilin
Guilin
Guilin
Guilin Strong
Strong
Strong
Strong Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
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DEVICE
DEVICE
■ DEVICE
DEVICE MARKING
MARKING
MARKING
MARKING 打標
Page 2
桂林斯壯微電子有限責任公司
■ ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS 電特性
(TA=25 ℃ unless otherwise noted 如無特殊說明，溫度爲 25 ℃ )
Characteristic
特性參數
Symbol符號Min
最小值
Typ
典型 值
Max
最大值
Unit
單位
Drain - Source Breakdown V oltage
漏 極 - 源 極擊穿電壓 ( ID= - 25 0 u
A,
V
GS
=0 V )
B V
DSS
-2 0
—
—
V
Gate Threshold V oltage
栅 極 開 启 電壓 ( ID= - 25 0 u
A,
V
GS
= V
DS
)
V
G S ( th )
-0.5
—
-1.5
V
Diode Forward Voltage Drop
内附二 極 管正向 壓 降 ( IS= -0.75
A,
V
GS
=0 V )
VSD—
—
- 1 . 5
V
Zero Gate Voltage Drain Current
零栅 壓 漏 極電流 (V
GS
= 0
V,
V
DS
= -16V )
(V
GS
= 0
V,
V
DS
= -16V , T
A
= 5 5 ℃ )
I
DSS
——- 1
-1 0
u A
Gate Body Leakage
栅 極 漏 電流 (V
GS
= + 10
V,
V
DS
= 0 V)
I
GSS
——+ 100
n A
Static Drain-Source On-State Resistance
静态漏源 導通電 阻 ( ID= -2.8
A,
V
GS
= -4. 5V )
R
DS ( ON )
——100
m Ω
Static Drain-Source On-State Resistance
静态漏源 導通電 阻 ( ID= -2
A,
V
GS
= -2.5 V )
R
DS ( ON )
——120
m Ω
Input Capacitance 輸入電容
(V
GS
= 0
V,
V
DS
= -10
V,
f=1 MHz)
C
ISS
—
600
—pFOutput Capacitance 輸出電容
(V
GS
= 0
V,
V
DS
= -10
V,
f=1 MHz)
C
OSS
—
120
—pFTurn-ON Time 开启 時間
(V
DS
= -10
V,
ID= -2.8 A , R
GEN
= 6 Ω )
t
(on)
—8—
ns
Turn-OFF Time 关断 時間
(V
DS
= -10
V,
ID= -2.8 A , R
GEN
= 6 Ω )
t
(off)
—60—
ns
Guilin
Guilin
Guilin
Guilin Strong
GM2 301
Strong
Strong
Strong Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Pulse Width < 300 μ s; Duty Cycle < 2.0%
Page 3
桂林斯壯微電子有限責任公司
GM 2301
■ DIMENSION
DIMENSION
DIMENSION
DIMENSION 外形封裝尺寸
Guilin
Guilin
Guilin
Guilin Strong
Strong
Strong
Strong Micro-Electronics
Micro-Electronics
Micro-Electronics
Micro-Electronics Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
Co.,Ltd.
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