Datasheet GLT6400L08SL-70ST, GLT6400L08SL-70FC, GLT6400L08LLI-85FC, GLT6400L08LLI-70FC, GLT6400L08LL-85ST Datasheet (G-LINK)

G-LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

G-Link Technology Corporation

2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.

- 1 -

Features : Description :

∗ Low-power consumption.

-active: 45mA at 85ns.

-stand by :
20 µA (CMOS input / output)
5 µA (CMOS input / output, SL)

∗ Single +2.7 to 3.3V power supply.
∗ Equal access and cycle time.
∗ 85 ns access time at 2.7V to 3.3V 70ns

access time at 3V to 3.6V

∗ 1.0V data retention mode.
∗ TTL compatible, tri-state input/output.
∗ Automatic power-down when deselected.
∗ Industrial grade (-40°C ~ 85°C)

available.

∗ Package available: sTSOP , SOP.

The GLT6400L08 is a low power CMOS Static

RAM organized as 524,288 x 8 bits. Easy memory
expansion is provided by an active LOW CE1 an

active LOW OE , and Tri-state I/O’s. This device has
an automatic power-down mode feature when

deselected.

Writing to the device is accomplished by taking

chip Enable 1 ( CE1 ) with Write Enable ( WE ) LOW.
Reading from the device is performed by taking Chip

Enable 1 ( CE1 ) with Output Enable ( OE ) LOW
while Write Enable ( WE ) and Chip Enable 2 (CE2)

is HIGH. The I/O pins are placed in a high-impedance
state when the device is deselected : the outputs are
disabled during a write cycle.

The GLT6400L08 comes with a 1V data retention
feature and Lower Standby Power. The GLT6400L08
is available in a 32-pin sTSOP packages,and 32pin
SOP package.

Function Block Diagram :

ROW DECODER

Cell

Array

SENSE AMP

INPUT BUFFER

COLUMN DECODER

CONTROL

CIRCUIT

OE
WE
CE1
CE2

I/O

7

I/O1

Column Address

Row Address

G-LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

G-Link Technology Corporation

2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.

- 2 -

Pin Configurations :

GLT6400L08 GLT6400L08

sTSOPI SOP

A

16

A

7

1
2
3
4
5
6

8
9
10
11
12
13

22
21

19
18
17

26
25
2423GND

OE

A

10

14

27

28

I/O

7

I/O

6

20 A

0

7

WE

V

CC

15
16

29

30

31

32A

11

A

9

A

8

A

13

A

17

A

15

A

14

A

12

A

6

A

5

A

4

A

3

A

2

A

1

I/O

0

I/O

1

I/O

2

I/O

3

I/O

4

I/O

5

CE

1

A

18

1

2
3
4
5
6

7

9
10
11

12
13

8

14
15
16 17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

A

18

A

16

A

14

A

12

A

6

A

5

A

3

A

2

A

1

A

0

I/O

0

GND I/O

3

I/O

7

CE

A

10

OE

A

11

WE

A

15

A

7

A

4

I/O

1

I/O

2

I/O

4

I/O

5

I/O

6

A

9

A

8

A

13

A

17

V

CC

Pin Descriptions:

Name

Function

A0 – A

18

Address Inputs

CE

1

Chip Enable Input

OE

Output Enable Input

WE

Write Enable Input

I/O0 – I/O

7

Data Input and Data Output

V

CC

Power Supply

GND Ground
NC No Connection

Truth Table:

CE

1

WE

OE

Data Mode

HXX

High-Z

Standby

XXX

High-Z

Standby

LHL

Data Out

Active, Read

LHH

High-Z

Active, Output Disable

LLX

Data Out

Active, Write

*Key : X = Don’t Care, L = Low, H = High

G-LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

G-Link Technology Corporation

2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.

- 3 -

Absolute Maximum Ratings*

Parameter Symbol Minimum Maximum Unit

Voltage on Any Pin Relative to Gnd Vt -0.5 Vcc+0.3 V
Power Dissipation P

T

- 1.0 W

Storage Temperature (Plastic) Tstg -55 +150

°C

Temperature Under Bias Tbias -40 +85

°C

*Note : Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any conditions outside those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.

Recommended Operating Conditions

Parameter Symbol Min Typ Max Unit

V

CC

2.7 3 3.3 V

Supply Voltage

Gnd 0.0 0.0 0.0 V

V

IH

2.0 - VCC+0.2 V

Input Voltage

V

IL

-0.5* - 0.6 V

* VIL min = -1.0V for pulse width less than tRC/2.

G-LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

G-Link Technology Corporation

2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.

- 4 -

DC Operating Characteristics ( 70ns Vcc=3V to 3.6V , 85ns Vcc=2.7V to 3.3V)

70 85

Parameter Sym. Test Conditions

Min Max Min Max

Unit

Input Leakage Current

I

LI

VCC = Max,
Vin = Gnd to V

CC

1 1

µA

Output Leakage
Current

I

LO

CE

1

=V

IH

VCC = Max, V

OUT

= Gnd to V

CC

1 1

µA

Operating Power
Supply Current

I

CC

CE

1

=VIL ,

VIN=VIH or VIL, I

OUT

=0mA

3

5 mA

I

CC1

CE

1

=VIL ,

I

OUT

= 0mA,

Min Cycle, 100% Duty

25 45 mA

Average Operating
Current

I

CC2

CE

1

=0.2V

I

OUT

= 0mA,

Cycle Time=1µs, 100% Duty

3 3 mA

Standby Power Supply

Current(TTL Level)

I

SB

CE

1

=V

IH

0.5 0.3 mA

GLT6400L08LL 5 20

µA

Standby Power Supply
Current (CMOS Level)

I

SB1

CE

1

≥ VCC-

0.2V or f=0
VIN ≤ 0.2V or
VIN ≥ VCC-0.2V

GLT6400L08SL 1 5

µA

Output Low Voltage V

OLIOL

= 2 mA 0.4 0.4 V

Output High Voltage V

OHIOH

= -1 mA 2.4 2.4 V

Data Retention

Parameter Sym. Test Conditions Min. Max. Unit

VCC for Data retention

V

DR

1.0 - V

Data Retention Current

I

CCDR

- 4

µA

Chip Deselect to Data Retention Time

t

CDR

0 - ns

Operating Recovery Time

(2)

t

R

CE

1

≥

VCC -0.2V or

V

IN

≥

VCC -0.2V or

V

IN

≤ 0.2V

t

RC

- ns

G-LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

G-Link Technology Corporation

2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.

- 5 -

Data Retention Waveform

Data Retention Mode

Vcc

CE

VDR

VDR >= 1.0V

tRtCDR

2.7V

2.7V

VIH

V

IH

AC Test Conditions AC Test Loads and Waveforms

CL*

TTL

Output Load Condition *Including Scope and Jig Capacitance

CL = 30pf + 1TTL Load

Read Cycle

(3,9)

( 70ns Vcc=3V to 3.6V , 85ns Vcc=2.7V to 3.3V )

70 85

Unit NoteParameter Symbol

Min Max Min Max

Read Cycle Time t

RC

70 85 ns

Address Access Time t

AA

70 85 ns

Chip Enable Access Time t

ACE

70 85 ns

Output Enable Access Time t

OE

40 40 ns

Output Hold from address Change t

OH

10 10 ns

Chip Enable to Output in Low-Z t

CLZ

10 10 ns 4,5

Chip Disable to Output in High-Z t

CHZ

25 35 ns 4,5

Output Enable to Output in Low-Z t

OLZ

5 5 ns 4,5

Output Disable to Output in High-Z t

OHZ

25 30 ns 4,5

Power-Up Time t

PU

0 0 ns 5

Power-Down Time t

PD

70 85 ns 5

Input Pulse Levels 0.4V to 2.4V
Input Rise and Fall Time
Input and Output Timing
Reference Level

5 ns

1.4V

G-LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

G-Link Technology Corporation

2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.

- 6 -

Timing Waveform of Read Cycle 1

(3,6,7,9)

(Address Controlled)

DOUT

tAA tOH

tRC

Data Valid

Address

Timing Waveform of Read Cycle 2

(5,6,8,9)

( CE1 Controlled)

t

OE

t

RC

Data Valid

CE1

t

OHZ

t

CHZ

t

PD

50%

50%

t

OLZ

t

ACE

t

CLZ

t

PU

Supply Current

OE

D

OUT

I

CC

I

SB

Write Cycle

(3,11)

( 70ns Vcc=3V to 3.6V , 85ns Vcc=2.7V to 3.3V )

70 85

Parameter Symbol

Min Max Min Max

Unit Note

Write Cycle Time t

WC

70 85 ns

Chip Enable to Write End t

CW

60 70 ns

Address Setup to Write End t

AW

60 70 ns

Address Setup Time t

AS

0 0 ns

Write Pulse Width t

WP

50 60 ns

Write Recovering Time t

WR

0 0 ns

Data Valid to Write End t

DW

30 35 ns

Data Hold Time t

DH

0 0 ns

Write Enable to Output in High-Z t

WZ

25 35 ns 4,5

Output Active from Write End t

OW

5 5 ns 4,5

G-LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

G-Link Technology Corporation

2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.

- 7 -

Timing Waveform of Write Cycle 1

(10,11)

( WE Controlled)

tWP

tAW

WE

tWC

tWR

tAS

tDW tDH

tOW

tWZ

Data Valid

Address

DIN

DOUT

Timing Waveform of Write Cycle 2

(10,11)

( CE1 Controlled)

tAW

WE

tWC

tWR

tDW tDH

Data Valid

Address

DIN

tAS tCW

t

WP

tWZ

CE1

DOUT

G-LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

G-Link Technology Corporation

2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.

- 8 -

Notes :

1. L-version includes this feature.

2. This Parameter is samples and not 100% tested.

3. For test conditions, see AC Test Condition.

4. This parameter is tested with CL = 5pF. Transition is measured ± 500mV from steady – state voltage.

5. This parameter is guaranteed, but is not tested.

6. WE is HIGH for read cycle.

7. CE1 and OE are LOW and for read cycle.

8. Address valid prior to or coincident with CE1 transition LOW .

9. All read cycle timings are referenced from the last valid address to the first transition address.

10. CE1 or WE must be HIGH during address transition.

11. All write cycle timings are referenced from the last valid address to the first transition address.

G-LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

G-Link Technology Corporation

2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.

- 9 -

Ordering Information

GLT6400L08LL-70 ST

70ns

Normal

sTSOPI 32L

GLT6400L08SL-70 ST

70ns

Normal

sTSOPI 32L

GLT6400L08SLI-70 ST

70ns

Normal

sTSOPI 32L

GLT6400L08SLI-70 ST

70ns

Normal

sTSOPI 32L

GLT6400L08LL-85 ST

85ns

Normal

sTSOPI 32L

GLT6400L08SL-85 ST

85ns

Normal

sTSOPI 32L

GLT6400L08SLI-85 ST

85ns

Normal

sTSOPI 32L

GLT6400L08SLI-85 ST

85ns

Normal

sTSOPI 32L

GLT6400L08LL-70 FC

70ns

Normal

SOP 32L

GLT6400L08SL-70 FC

70ns

Normal

SOP 32L

GLT6400L08SLI-70 FC

70ns

Normal

SOP 32L

GLT6400L08SLI-70 FC

70ns

Normal

SOP 32L

GLT6400L08LL-85 FC

85ns

Normal

SOP 32L

GLT6400L08SL-85 FC

85ns

Normal

SOP 32L

GLT6400L08SLI-85 FC

85ns

Normal

SOP 32L

GLT6400L08SLI-85 FC

85ns

Normal

SOP 32L

Parts Numbers (Top Mark) Definition :

GLT 6 400 L 08 LL I - 85 TC

4 : DRAM
6 : Standard
SRAM
7 : Cache SRAM
8 : Synchronous
Burst SRAM

-SRAM

064 : 64K
256 : 256K
512 : 512K
100 : 1M

-DRAM

10 : 1M(C/EDO)
11 : 1M(C/FPM)
12 : 1M(H/EDO)
13 : 1M(H/FPM)
20 : 2M(EDO)
21 : 2M(FPM)
40 : 4M(EDO)
41 : 4M(FPM)
80 : 8M(EDO)
81 : 8M(FPM)

VOLTAGE

Blank : 5V
L : 3.3V
M : 2.5V
N : 2.1V

CONFIG.

04 : x04
08 : x08
16 : x16
32 : x32

SPEED

-SRAM

10 : 10ns
12 : 12ns
15 : 15ns
20 : 20ns
70 : 70ns

-DRAM

35 : 35ns
40 : 40ns
45 : 45ns
50 : 50ns
60 : 60ns

PACKAGE

T : PDIP(300mil)
TS : TSOP(Type I)
ST : sTSOP (Type I)
TC : TSOP(Type ll)
PL : PLCC
FA : 300mil SOP
FB : 330mil SOP
FC : 445mil SOP
J3 : 300mil SOJ
J4 : 400mil SOJ
P : PDIP(600mil)
Q : PQFP
TQ : TQFP
FG : 48-fpBGA

LL : Low Low power
L : Low power
SL : Super Low power

I : Industrial Temperature
(-40°C~85°C)
E : Extended Temperature
(-25°C~85°C.
Blank : 0°C~70°C.

G-LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

G-Link Technology Corporation

2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.

- 10 -

Package Information

32 pin 8x13.4mm Small Outline J-form Package (sTSOP)

32 pin 445mil Small Outline J-form Package SOP