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GLT41316-35J4
Datasheet (G-LINK)
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Datasheet GLT41316-45TC, GLT41316-45J4, GLT41316-40TC, GLT41316-40J4, GLT41316-35TC Datasheet (G-LINK)

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G-LINK
WE
RAS
CAS
RAS
WE
RAS
CAS
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Features : Description :
GLT41316
June 1998 (Rev 2)
∗ 65,536 words by 16 bits organization. ∗ Fast access time and cycle time.
∗ Dual
Input.
∗ Low power dissipation. ∗ Read-Modify-Write,
-Before-
Refresh and Test Mode Capability.
Refresh, Hidden
-Only Refresh,
∗ 256 refresh cycles per 4ms. ∗ Available in 40-pin 400 mil SOJ,and 40/44
pin TSOP (II).
∗ Single 5.0V±10% Power Supply. ∗ All inputs and Outputs are TTL
compatible. ∗ Fast Page Mode operation.
The GLT41316 is a 65,536 x 16 bit high­performance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and
WORD WRITE access cycles via two pins. The GLT41316 has symmetric address and accepts 256-cycle refresh in 4ms interval.
All inputs are TTL compatible. Fast Page Mode operation allows random access up to 256x16 bits, within a page, with cycle times as short as 18ns.
The GLT41316 is best suited for graphics, and DSP applications requiring high performance memories.
HIGH PERFORMANCE 30 35 40 45
Max.
Access Time, (t
RAC
)
30 ns 35 ns 40 ns 45 ns
Max. Column Address Access Time, (tAA) 15 ns 18 ns 20 ns 22 ns Min. Fast Page Mode Cycle Time, (tPC) 18 ns 21 ns 23 ns 25 ns Min. Read/Write Cycle Time, (tRC) 65 ns 70 ns 75 ns 80 ns
Max.
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Access Time (t
CAC
)
10 ns 11 ns 12 ns 12 ns
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RAS
CAS
UW
LW
OE
Pin Configuration :
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Pin Descriptions:
GLT41316
SOJ Top View
TSOP(Type II)
Top View
Name Function
A0 - A
DQ0 - DQ V V
7
15 CC SS
NC No Connection
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Address Inputs Row Address Strobe
Column Address Strobe Read / Upper Byte Write Enable Read / Lower Byte Write Enable Output Enable Data Inputs / Outputs
+5V Power Supply Ground
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RAS,CAS,UW,LW, OE
WE
UW
CAS
RAS
RAS
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Absolute Maximum Ratings* Capacitance*
TA=25°C, VCC=5V±10%, VSS=0V
GLT41316
June 1998 (Rev 2)
Operating Temperature, TA (ambient)
Symbol
.......................................-0°C to +70°C
C
Storage Temperature(plastic)....-55°C to +150°C
Voltage Relative to VSS...............-1.0V to + 7.0V
IN1
C
IN2
Short Circuit Output Current......................50mA
C
Power Dissipation......................................1.0W
*Note: Operation above Absolute Maximum Ratings
can adversely affect device reliability.
OUT
*Note: Capacitance is sampled and not 100% tested
Electrical Specifications
l
l All voltages are referenced to GND. l After power up, wait more than 100µs and then, execute eight
means
and LW.
refresh cycles as dummy cycles to initialize internal circuit.
Block Diagram :
Parameter
Address Input
Data Input/Output
-before-
or
Max.
5 7 7
Unit
pF pF pF
-only
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G-Link Technology Corporation, Taiwan
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RAS
CAS
UWLWOE
RAS
UW
Truth Table: GLT41316
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Function
Standby H Read: Word L L H H L ROW/COL Data Out
Write: Word(Early Write) L L L L X ROW/COL Data-In Write: Lower Byte (Early) L L H L X ROW/COL Lower Byte,Data-In
Write: Upper Byte (Early) L L L H X ROW/COL Lower Byte,High-Z
Read Write L L Fast-Page­Mode Read
Fast-Page­Mode Write
Fast-Page­Mode Read­Write
1st Cycle 2nd Cycle
1st Cycle 2nd Cycle
1st Cycle
2nd Cycle
L L
L L
L
L
H→X
H→L H→L H→L H→L H→L
H→L
X X X High-Z
H→L H→L L→H
H H
H
L L
H→L
H→L
L L
H→L
H→L
L→H
L→H
ADDRESS DQs Note
Upper Byte,High-Z
Upper Byte,Data-In
ROW/COL Data-Out,Data-In 1,2 L L
X X
ROW/COL
COL
ROW/COL
COL
ROW/COL
COL
Data-Out Data-Out
Data-In Data-In
Data-Out,Data-In
Data-Out,Data-In
s
1 1
2 2
1,2
1,2
Hidden Refresh
-Only Refresh
CBR Refresh
Read
Write
L→H→L
L→H→L
L H X X X ROW High-Z
H→L
L
L
L X X X High-Z
H
L
H
L
Notes:
1. These READ cycles are always WORD READ cycles .
2. These WRITE cycles may also be BYTE READ cycles (either
3. EARLY WRITE only.
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L
ROW/COL
X
ROW/COL
or LW active).
G-Link Technology Corporation, Taiwan
Data-Out
Data-In
1
2,3
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RAC
RAC
RAC
RAC
RAS, CAS
RAS
CAS
RAC
RAC
RAC
RAC
RAS
CAS
RAC
RAC
RAC
RAC
RAS, CAS
RAC
RAC
RAC
RAC
RAS
CAS
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
DC and Operating Characteristics (1-2)
TA = 0°C to 70°C, VCC=5V±10%, VSS=0V, unless otherwise specified.
GLT41316
June 1998 (Rev 2)
Sym. Parameter Test Conditions Access
Time
I
I
I
I
I
I
I
I
V V V V
Input Leakage Current
LI
(any input pin)
0V ≤ V
≤ 5.5V
IN
(All other pins not under test=0V)
Output Leakage Current
LO
(for High-Z State) Operating Current,
CC1
Random READ/WRITE tRC = tRC (min.)
Standby Current,(TTL)
CC2
Refresh Current,
CC3
RAS-Only
Operating Current,
CC4
EDO Page Mode
Refresh Current,
CC5
CAS Before RAS
Standby Current, (CMOS)
CC6
0V ≤ V
out
≤ 5.5V
Output is disabled (Hiz)
at V
IH
other inputs ≥V
cycling,
V
IH
SS
at
tRC = tRC (min.)
at VIL,
address cycling: t
,
PC
=
tPC(min.)
, address cycling: t
= tRC (min.)
RC
≥VCC-0.2V,
t t t t
t t t t t t t t t t t t
= 30ns = 35ns = 40ns = 45ns
= 30ns = 35ns = 40ns = 45ns = 30ns = 35ns = 40ns = 45ns = 30ns = 35ns = 40ns = 45ns
≥VCC-0.2V,
All other inputs ≥V
Input Low Voltage -1 +0.8 V 3
IL
Input High Voltage 2.4 VCC+1 V 3
IH
Output Low Voltage IOL = 4.2mA 0.4 V
OL
Output High Voltage IOH = -5mA 2.4 V
OH
SS
Notes:
1. I
is dependent on output loading when the device output is selected. Specified I
CC
output open.
2. ICC is dependent upon the number of address transitions specified I one transition per address cycle in random Read/Write and Fast Page Mode.
3. Specified V to exceed 20ns. All AC parameters are measured with V
is steady state operation. During transitions V
IL(min.)
IL(min.)≥VSS
CC(max.)
may undershoot to -1.0V for a period not
IL(min.)
and V
Min. Typ Max. Unit Notes
-10 +10
-10 +10
180 170 160 150
180 170 160 150 180 170 160 150 180 170 160 150
is measured with the
CC(max.)
is measured with a maximum of
IH(max.)≤VCC
.
µA
µA
mA 1,2
4 mA
mA 2
mA 1,2
mA 1
2 mA
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G-Link Technology Corporation, Taiwan
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RAC
RAC
RAC
RAC
RAS
CAS
CAS
CAS
RAS
RAS
RAS
CAS
CAS
RAS
CAS
RAS
CAS
RAS
RAS
RAS
RAS
CAS
WE
CAS
RAS
WE
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
AC Characteristics (0°°C ≤≤ TA ≤≤ 70°°C, See note 1,2)
Test condition:VCC=5.0V±10%, VIH/VIL=2.4V/0.8V,VOH/VOL=2.4V/0.4V
Parameter t
SymbolMIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Unit Notes
= 30 ns t
= 35 ns t
= 40 ns t
GLT41316
June 1998 (Rev 2)
= 45 ns
Read/Write Cycle Time t Read Midify Write Cycle Time t
Access Time from Access Time from
Access Time from Column Address t
to Output in Low-Z
Output Buffer Turn-off Delay from Transition Time(Rise and Fall) t
Precharge Time Pulse Width Hold Time Hold Time Pulse Width to
Delay Time to Column Address Delay Time to
Precharge Time
Row Address Setup Time t Row Address Hold Time t Column Address Setup Time t Column Address Hold Time t Column Address Hold Time Referenced
to Column Address Lead Time Referenced
to Read Command Setup Time t Read Command Hold Time Referenced
to Read Command Hold Time Referenced
to
Hold Time Referenced to
Write Command Hold Time Referenced to
Pulse Width
RC RWC
t
RAC
t
CAC
AA
t
CLZ
t
OFF
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
ASR RAH ASC CAH
t
AR
t
RAL
RCS
t
RRH
t
RCH
t
WCH
t
WCR
t
WP
65 - 70 - 75 - 80 - ns 80 - 99 - 105 - 110 - ns
- 30 - 35 - 40 - 45 ns 3,4
- 10 - 11 - 12 - 12 ns 3,4
- 15 - 18 - 20 - 22 ns 3,4
0 0 - 0 - 0 - ns 3 3 8 3 8 3 8 3 8 ns 7 3 50 3 50 3 50 3 50 ns 2
25 - 25 - 25 - 25 - ns 30 100k 35 100k 40 100K 45 100K ns 10 - 12 - 12 - 13 - ns 30 - 36 - 40 - 46 - ns 10 10000 12 10000 12 10000 13 10000 ns 13 20 17 24 18 28 18 33 ns 4 10 15 12 17 13 20 13 23 ns 4
5 - 5 - 5 - 5 - ns 8 0 - 0 - 0 - 0 - ns
7 - 7 - 8 - 8 - ns 0 - 0 - 0 - 0 - ns 6 - 6 - 6 - 6 - ns
26 - 30 - 34 - 39 - ns
15 - 18 - 20 - 23 - ns
0 - 0 - 0 - 0 - ns 0 - 0 - 0 - 0 - ns 9
0 - 0 - 0 - 0 - ns 9
6 - 6 - 6 - 6 - ns 10
26 - 30 - 34 - 39 - ns 5
6 - 6 - 6 - 6 - ns 10
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RAC
RAC
RAC
RAC
WE
RAS
WE
CAS
RAS
WE
RAS
CAS
CAS
CAS
RAS
CAS
CAS
RAS
RAS
CAS
CAS
CAS
CAS
RAS
RAS
CAS
OE
OE
OE
OE
WE
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Parameter t
Lead Time Referenced to
Lead Time Referenced to Data-In Setup Time t Data-In Hold Time t
Data Hold Time Referenced to
Setup Time
toWE Delay Time to WE Delay Time
Column Address to WE Delay Time
Setup Time(
Refresh)
Hold Time(
Refresh)
to
Precharge Time
Precharge Time(CBR Counter Test
Cycle) Access Time from
Fast Page mode Read/Write Cycle Time Fast Page mode Read Modify Write
Cycle Time
Precharge Time(Fast Page mode) Pulse Width(Fast Page mode) Hold Time from
Access Time from
to Delay Time
Output Buffer Turn-off Delay Time from
before
before
Precharge
Precharge
= 30 ns t
= 35 ns t
= 40 ns t
= 45 ns
SymbolMIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Unit Notes
t
RWL
t
CWL
DS DH
t
DHR
t
WCS
t
RWD
t
CWD
t
AWD
t
CSR
t
CHR
t
RPC
t
CPT
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
10 - 11 - 12 - 12 - ns 10 - 11 - 12 - 12 - ns
0 - 0 - 0 - 0 - ns 11 7 - 7 - 8 - 8 - ns 11
27 - 31 - 36 - 41 - ns 6
0 - 0 - 0 - 0 - ns 5 47 - 58 - 63 - 68 - ns 5 24 - 29 - 30 - 30 - ns 5 29 - 36 - 38 - 40 - ns 5
5 - 5 - 5 - 5 - ns
10 - 10 - 10 - 10 - ns
5 - 5 - 5 - 5 - ns 20 - 20 - 20 - 20 - ns
- 18 - 21 - 23 - 25 ns 3
18 - 21 - 23 - 25 - ns 48 - 60 - 63 - 65 - ns
5.5 - 6 - 7 - 7 - ns 30 100k 35 100k 40
100K
45
100K
ns
25 - 25 - 25 - 30 - ns
- 10 - 11 - 12 - 12 ns 8 - 8 - 8 - 8 - ns 3 8 3 8 3 8 3 8 ns 7
Hold Time
Hold Time(Hidden Refresh Cycle)
Refresh Time(256cycles)
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t
OEH
t
WHR
t
REF
6 - 6 - 7 - 7 - ns
15 - 15 - 15 - 15 - ns
- 4 - 4 - 4 - 4 ms
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Notes
RAS
CAS
RAS
RAS,CAS
CAS
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
1. An initial pause of 100µs is required after power-up followed by any 8 before
2. V
IH(min.)
are measured between V
Refresh cycles to initialize the internal circuit.
and V
are reference levels for measuring timing of input signals. Transition times
IL(min.)
IH(min.)
and V
, AC measurements assume tT = 3ns.
IL(max.)
only Refresh or
3. Measured with an equivalent to 2 TTL loads and 100pF.
4. For read cycles, the access time is defined as follows:
Input Conditions Access Time
t
RAD
t
RAD(max.)
t
RCD(max.)
t
RAD(MAX.)
≤ t
RAD(MAX.)
< t
RAD
< t
RCD
and t
and t
and t
RCD(MAX.)
≤ t
RCD
RCD(MAX.)
≤ t
RCD
RCD(MAX.)
indicate the points which the access time changes and are not the limits of
t t t
RAC(MAX.) AA(MAX.) CAC(MAX.)
operation.
5. t
WCS
, t
RWD
, t
CWD
and t
are non restrictive operating parameters. They are included in the data
AWD
sheet as electric characteristics only. If t will remain high impedance for the duration of the cycle. If t t
AWD
≥ t
AWD(min.)
, then the cycle is a read-modify-write cycle and the data output will contain the data
WCS
≥ t
WCS(min.)
, the cycle is an early write cycle and the data output
CWD
≥ t
CWD(min.),tRWD
≥ t
RWD (min.)
and
read from the selected address. If neither of the above conditions is satisfied, the condition of the data out is indeterminate.
6. tAR, t
7. t
OFF(max.)
WCR
, and t
and t
are referenced to t
DHR
OEZ(max.)
define the time at which the output achieves the open circuit condition and are
RAD(max.)
.
not referenced to VOH or VOL.
8. t
CRP(min)
9. Either t
10. t
requirement should be applicable for
RCH(min.)
WP(min.)
or t
RRH(min.)
is applicable for late write cycle or read modify write cycle. In early write cycles, t
should be satisfied.
11.This specification is referenced to late write or read modify write cycles.
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cycle preceded by any cycles.
must be satisfied for a read cycle.
WCH(min.)
falling edge in early write cycles and to WE falling edge in
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G-LINK
Read Cycle Note : DIN = OPEN
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
UW,LW
G-Link Technology Corporation
2701Northwestern Parkway Santa Clara, CA 95051, U.S.A.
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G-LINK
Early Write Cycle
NOTE : D
= OPEN
OUT
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
UW,LW
G-Link Technology Corporation
2701Northwestern Parkway Santa Clara, CA 95051, U.S.A.
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OE
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Late Write Cycle ( NOET : D
= OPEN
OUT
Controlled Write)
UW,LW
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Read - Modify - Write Cycle
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
UW,LW
G-Link Technology Corporation
2701Northwestern Parkway Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
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G-LINK
Fast Page Read Cycle
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
UW,LW
G-Link Technology Corporation
2701Northwestern Parkway Santa Clara, CA 95051, U.S.A.
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Fast Page Early Write Cycle
NOTE : D
= OPEN
OUT
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
UW,LW
G-Link Technology Corporation
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G-Link Technology Corporation, Taiwan
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Fast Page Mode Late Write Cycle
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
UW,LW
G-Link Technology Corporation
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G-LINK
Fast Page Read-Modify-Write Cycle
NOTE : D
= OPEN
OUT
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
UW,LW
G-Link Technology Corporation
2701Northwestern Parkway Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
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CAS
RAS
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Before
Refresh Cycle
RAS-Only Refresh Cycle
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G-LINK
Hidden Refresh Cycle ( Read )
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
UW,LW
G-Link Technology Corporation
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Hidden Refresh Cycle ( Write ) NOTE : D
= OPEN
OUT
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
UW,LW
G-Link Technology Corporation
2701Northwestern Parkway Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation, Taiwan
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G-LINK
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Ordering Information
Part Number SPEED POWER FEATURE PACKAGE
GLT41316-30J4 30ns Normal FPM SOJ 400mil 40L GLT41316-35J4 35ns Normal FPM SOJ 400mil 40L GLT41316-40J4 40ns Normal FPM SOJ 400mil 40L
GLT41316-45J4 45ns Normal FPM SOJ 400mil 40L GLT41316-30TC 30ns Normal FPM TSOP 400mil 44L GLT41316-35TC 35ns Normal FPM TSOP 400mil 44L GLT41316-40TC 40ns Normal FPM TSOP 400mil 44L GLT41316-45TC 45ns Normal FPM TSOP 400mil 44L
Parts Numbers (Top Mark) Definition :
GLT41316
June 1998 (Rev 2)
4 : DRAM 6 : Standard SRAM 7 : Cache SRAM 8 : Synchronous Burst SRAM
GLT 4 13 16 - 40 J4
-SRAM
064 : 8K 256 : 256K 512 : 512K 100 : 1M
-DRAM
10 : 1M(C/EDO)* 11 : 1M(C/FPM)* 12 : 1M(H/EDO)* 13 : 1M(H/FPM)* 20 : 2M(EDO) 21 : 2M(FPM) 40 : 4M(EDO) 41 : 4M(FPM) 80 : 8M(EDO) 81 : 8M(FPM) *See note
CONFIG.
04 : x04 08 : x08 16 : x16 32 : x32
VOLTAGE
Blank : 5V L : 3.3V M : Mix Voltage
SPEED
-SRAM
12 : 12ns 15 : 15ns 20 : 20ns 70 : 70ns
-DRAM
30 : 30ns 35 : 35ns 40 : 40ns 45 : 45ns 50 : 50ns 60 : 60ns
PACKAGE
T : PDIP(300mil) TS : TSOP(Type I) TC : TSOP(Type ll) PL : PLCC FA : 300mil SOP FB : 330mil SOP FC : 445mil SOP J3 : 300mil SOJ J4 : 400mil SOJ P : PDIP(600mil) Q : PQFP TQ : TQFP
Note : CÙCDROM , HÙHDD. Example :
1.GLT710008-15T 1Mbit(128Kx8)15ns 5V SRAM PDIP(300mil)Package type.
2.GLT44016-40J4 4Mbit(256Kx16)40ns 5V DRAM SOJ(400mil)Package type.
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G-LINK
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Package Information
400mil 40 pin Small Outline J-form Package (SOJ)
GLT41316
June 1998 (Rev 2)
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G-LINK
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
40/44 Lead Thin Small Outline Package TSOP(Type II)
GLT41316
June 1998 (Rev 2)
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