Page 1
GL4100
GL4100
Side View and Thin Flat Type
Infrared Emitting Diode
■
Features
1. Compact flat package
2. Wide beam angle
(Half intensity angle : ± 90˚ )
Applications
■
1. Mouses
2. Track balls
■
Outline Dimensions
3.0
2 - C0.5
MAX.
0.3
Gate burr
MAX.
Rugged resin
0.9
2 - 0.45
MAX.
+ 0.3
- 0.1
1
6˚
2.8
Rugged resin 0.2
Detector center
1.4
1.4
(
)
1.7
MIN.
0.5
2
(
)
2.54
6˚6˚
6˚
1.8
0.7
0.7
4˚
4.0
4˚
- 10
+ 15
17.5
* ( ) : Reference dimensions
* Tolerance : ± 0.2 mm
Pale red transparent
epoxy resin
4˚
0.1
4˚
0.15
2 - 4
(Unit : mm)
MAX.
+ 0.3
- 0.1
1 Anode
2 Cathode
2
1
■
Absolute Maximum Ratings
(Ta=25˚C)
Parameter Symbol Rating Unit
Forward current
*1
Peak forward current
Reverse voltage
Power dissipation
Operating temperatur
Storage temperature
*2
Soldering temperature
* 1 Pulse width <=100µs, Duty ratio=0.01
* 2 For 5 seconds at the position of 1.4 mm from the resin edge
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
I
F
I
FM
V
R
PmW
T
opr
T
stg
T
sol
50 mA
1
6
75
-25to+85
-40to+85
260 ˚C
A
V
1.4mm
˚C
˚C
Soldering area
Page 2
GL4100
■
Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Forward voltage
Peak forward voltage
Reverse current
Radiant flux
Peak emission wavelength
Half intensity wavelength
Terminal capacitance
Response frequency
Half intensity angle
V
V
Φ
λ
∆λ
∆
(Ta=25˚C)
= 20mA
F
FM
I
R
e
p
I
F
I
FM
V
R
= 20mA
I
F
= 5mA
I
F
= 0.5A
=3V
IF= 5mA
C
t
f
c
θ
V
= 0, f = 1MH
R
IF= 20mA
Z
-
- 1.2 1.4 V
3.0
- 4.0 V
--10µA
1.0 2.0
-mW
- 950 - nm
-45-nm
-50300
-
pF
-
kH
Z
-±90- ˚
Fig. 1 Forward Current vs. Ambient
Temperature
60
50
)
mA
(
40
F
30
20
Forward current I
10
0
- 25 0 25 50 75 10085
Ambient temperature Ta (˚C)
Fig. 2 Peak Forward Current vs. Duty Ratio
Pulse width<=100 µs
Ta= 25˚C
)
1000
mA
(
FM
100
10
Peak forward current I
1
-4
10
10
-3
-2
10
Duty ratio
-1
10
1
Page 3
GL4100
Fig. 3 Spectral Distribution Fig. 4 Peak Emission Wavelength vs.
100
80
60
40
20
Relative radiant intensity (%)
0
900 940 980
880 920 960
Wavelength λ (nm)
= 5mA
I
F
T
= 25˚C
a
1000 1020 1040
Ambient Temperature
1000
975
950
925
Peak emission wavelength λp (nm)
900
0255075100
-25
Ambient temperature Ta (˚C
I
F
= const.
)
Fig. 5 Forward Current vs. Forward Voltage Fig. 6 Relative Radiant Flux vs. Ambient
Temperature
500
= 75˚C
T
a
50˚C
50
20
10
5
)
mA
(
F
200
100
Forward current I
2
1
0 0.5 1.0 1.5 2.0 2.5 3.0
Forward voltage VF (V
25˚C
0˚C
-
20˚C
3.5
)
20
10
5
2
1
Relative radiant flux
0.5
0.2
0.1
0255075100
-25
Ambient temperature Ta (˚C
)
=
I
F
const.
Fig. 7 Radiant Flux vs. Forward Current Fig. 8 Relative Radiant Intensity vs. Distance
)
mW
(
Radiant flux Φ e
0.5
0.2
0.1
0.05
0.02
0.01
10
5
2
1
DC
Forward current IF (mA
100101
T
a
Pulse
(pulse width
<=100 µs)
)
= 25˚C
1000
100
10
1
Relative radiant intensity (%)
0.1
1 10 1000.1
Distance to detector d (mm)
Ta = 25˚C
Page 4
GL4100
20
40
60
80
100
120
140
160
180
200
Fig. 9 Relative Radiant Intensity vs.
Distance (Detector : PT4110)
100
10
1
0.1
Relative radiant intensity (%)
0.01
●
Please refer to the chapter "Precautions for Use". (Page 78 to 93)
1 10 1000.1
Ta=25˚C
Fig. 10 Radiation Diagram
- 20˚
- 30˚
- 40˚
- 50˚
- 60˚
- 70˚
- 80˚
- 90˚
Angular displacement θDistance to detector d (mm)
0˚- 10˚
Relative radiant intensity (%)
0
(Ta=25˚C)
20˚10˚
30˚
40˚
50˚
60˚
70˚
80˚
90˚
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