Page 1
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics(T
A
= 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
±
20
Continuous Drain Current T
A
= 25°C
I
D
7
TJ= 150°C
(1)
TA= 70°C 5.8
A
Pulsed Drain Current I
DM
30
Continuous Source Current (Diode Conduction)
(1)
I
S
2
Maximum Power Dissipation
(1)
TA= 25°C
P
D
2.5
W
TA= 70°C 1.6
Operating Junction and Storage Temperature Range TJ, T
stg
–55 to 150 °C
Maximum Junction-to-Ambient
(1)
Thermal Resistance R
θJA
50 °C/W
Mechanical Data
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 0.5g
GF9410
N-Channel Enhancement-Mode MOSFET
VDS30V R
DS(ON)30m
Ω ID7A
7/10/01
5
1
4
0.244 (6.20)
0.228 (5.79)
8
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
0.009 (0.23)
0.004 (0.10)
0.197 (5.00)
0.189 (4.80)
0.069 (1.75)
0.053 (1.35)
0.019 (0.48)
0.010 (0.25)
x 45
°
0°– 8
°
0.050(1.27)
0.016 (0.41)
0.009 (0.23)
0.007 (0.18)
Dimensions in inches
and (millimeters)
SO-8
T
RENCH
G
EN
F
ET
®
0.245 (6.22)
Min.
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
0.165 (4.19)
0.155 (3.94)
0.05 (1.27)
0.04 (1.02)
Mounting Pad Layout
Page 2
Electrical Characteristics(T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage BV
DSS
VGS= 0V, ID= 250µA30 ––V
Gate Threshold Voltage V
GS(th)
VDS= VGS, ID= 250µA1 – 3V
Gate-Body Leakage I
GSS
VGS= ±20V, VDS= 0V ––±100 nA
Zero Gate Voltage Drain Current I
DSS
VDS= 30V, VGS= 0V ––1
µA
VDS= 30V, VGS= 0V, TJ= 55°C
––5
On-State Drain Current
(2)
I
D(on)
VDS≥ 5V, VGS= 10V 30 ––A
VGS= 10V, ID= 7A – 22 30
Drain-Source On-State Resistance
(2)
R
DS(on)
VGS= 5V, ID= 4A – 28 40 mΩ
VGS= 4.5V, ID= 3.5A – 30 50
Forward Transconductance
(2)
g
fs
VDS= 15V, ID= 7A – 16 – S
Dynamic
Total Gate Charge Q
g
– 20 50
Gate-Source Charge Q
gs
VDS= 15V, ID= 2A
– 2.5 – nC
Gate-Drain Charge Q
gd
VGS= 10V
– 3.5 –
Turn-On Delay Time t
d(on)
– 10 30
Turn-On Rise Time t
r
VDD= 25V, ID= 1A
– 860
Turn-Off Delay Time t
d(off)
V
GEN
= 10V, RG= 6Ω
– 35 150
ns
Turn-Off Fall Time t
f
RL= 25Ω
– 14 140
Input Capacitance C
iss
VDS= 15V – 1000 –
Output Capacitance C
oss
VGS= 0V – 250 – pF
Reverse Transfer Capacitance C
rss
f = 1.0MH
Z
– 80 –
Source-Drain Diode
Diode Forward Voltage
(2)
V
SD
IS = 2A, V
GS
= 0V – 0.75 1.3 V
Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec.
(2) Pulse test; pulse width ≤ 300 µs,
duty cycle ≤ 2%
GF9410
N-Channel Enhancement-Mode MOSFET
G
D
S
VIN
VDD
VGEN
RG
RD
VOUT
DUT
Input, VIN
t
d(on)
Output, VOUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
Page 3
Ratings and
Characteristic Curves(T
A
= 25°C unless otherwise noted)
0
5
10
15
25
30
01234
0.02
0.01
0.025
0.015
0.03
0.035
0.04
0 5 10 15 20 25 30
0
10
5
15
25
20
30
12345
20
2.5V
0.6
1.2
1.4
1.6
0.8
1
VGS = 10V
I
D
= 7A
6.0
V
TJ = 125°C
4.0V
4.5V
5.0
V
25°C
V
DS
= 10V
VGS = 4.5V
5V
0.8
0.6
1
1.2
1.4
1.6
1.8
ID = 250µA
3.0V
3.5V
Fig. 1 – Output Characteristics
I
D
-- Drain Source Current (A)
VDS -- Drain-to-Source Voltage (V)
Fig. 4 – On-Resistance
vs. Drain Current
R
DS(ON)
-- On-Resistance (Ω)
ID -- Drain Current (A)
Fig. 2 – Transfer Characteristics
I
D
-- Drain Current (A)
VGS -- Gate-to-Source Voltage (V)
R
DS(ON)
-- On-Resistance
(Normalized)
TJ -- Junction Temperature (°C)
Fig. 5 – On-Resistance
vs. Junction Temperature
V
GS(th)
-- Threshold Voltage (V)
TJ -- Junction Temperature (°C)
Fig. 3 – Threshold Voltage
vs. T emperature
--55°C
--50 --25 25 50 75 100 125 1500
--50 --25 25 50 75 100 125 1500
10V
VGS=10V
GF9410
N-Channel Enhancement-Mode MOSFET
Page 4
Ratings and
Characteristic Curves(T
A
= 25°C unless otherwise noted)
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TJ = 125°C
--55°C
25°C
VGS = 0V
0
2
4
6
8
10
04 8121620
VDS = 15V
I
D
= 7A
0
200
400
600
800
1000
1200
0 5 10 15 3020 25
C
rss
f = 1MHz
V
GS
= 0V
C
oss
I
S
-- Source Current (A)
VSD -- Source-to-Drain Voltage (V)
Fig. 9 – Source-Drain Diode
Forward V oltage
Qg -- Gate Charge (nC)
Fig. 7 – Gate Charge
V
GS
-- Gate-to-Source Voltage (V)
Fig. 8 – Capacitance
C -- Capacitance (pF)
VDS -- Drain-to-Source Voltage (V)
C
iss
0
0.02
0.04
0.06
0.08
0.1
246810
ID = 7A
TJ = 125°C
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
R
DS(ON)
-- On-Resistance (Ω)
VGS -- Gate-to-Source Voltage (V)
25°C
GF9410
N-Channel Enhancement-Mode MOSFET
Page 5
Ratings and
Characteristic Curves(T
A
= 25°C unless otherwise noted)
GF9410
N-Channel Enhancement-Mode MOSFET
Fig. 11 – T ransient Thermal
Impedance
Fig. 13 – Maxim um Saf e Operating Area
I
D
-- Drain Current (A)
VDS -- Drain-Source Voltage (V)
0.01
0.1
0.1
1
1
10
100
10 100
Fig. 12 – Power vs. Pulse Duration
VGS = 10V
Single Pulse
on 1-in
2
2oz Cu.
T
A
= 25°C
R
DS(ON)
Limit
100µs
1ms
10ms
100ms
1s
DC
10s
0.10.01
0
10
20
30
40
50
60
70
1 10 100
36
37
39
40
41
42
38
ID = 250µA
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
BV
DSS
-- Breakdown Voltage (V)
TJ -- Junction Temperature (°C)
--50 --25 25 50 75 100 1250 150
Loading...