Datasheet GDU90-20721 Datasheet (DYNEX)

GDU 90-20721

GDU 90-20721

Gate Drive Unit

Replaces March 1998 version, DS4567-3.1 DS4567-4.0 January 2000

This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.

APPLICATIONS

■ Used with Gate Turn-Off Thyristors in high current switching
applications

I

FGM

I

G(ON)

dIGQ/dt 50A/µs

CONDITIONS - (UNLESS STATED OTHERWISE)

V1 = +5V V2 = +15V V3 = -15V

Test circuit GTO

GDU connection to GTO

Test circuit emitter and gate drive emitter

Test circuit emitter current

Test circuit receiver and gate drive receiver Hewlett Packard versatile link HFBR 2524

DG858BW

500mm CO - AX cable type RC5327230
(2 cables in parallel)

Hewlett Packard versatile link HFBR 1524

30mA

KEY PARAMETERS

40A
10A

ELECTRICAL CHARACTERISTICS

Parameter

+5V PSU current

+15V PSU current

-15V PSU currentI

+5V PSU minimum

+15V PSU minimum

-15V PSU minimum

Peak forward gate current

On-state gate current

/dt

Rate of rise of positive gate current

/dt

Rate of rise of negative gate current

dI

dI

V

V

V

I

I

I

V1

I

V2

V3

1(Min)

2(Min)

3(Min)

FGM

G(ON)

FG

GQ

Conditions

500Hz, 50% duty cycle

500Hz
500Hz, I

GTO Tj = 125˚C

= 3000A

T

-

-

-

-

-

Measured 10 - 75% I

IT = 3000A, 90% I

G(ON)

FGM

- 50% I

GQM

UnitsMax.Typ.Min.Symbol

-

-

-

3.8

14.0

14.0

40

--

10

-40-

-

50

5.5 A

-

0.70 A

-

-

12

--

--

--

--

-

A

V

V

V

A

A

A/µs

A/µs

1/4

GDU 90-20721

TIMING CHARACTERISTICS

No response pulse width of

†

t

*

t3*

1

t

t5*

t

2

4

input signal
Delay time emitter

current to receiver o/p
Turn-on delay emitter

†

current to 10% I
I

pulse width

FGM

Minimum on time
10% I

to 90% I

FGM

FGM

G(ON)

Adjustable by R81 + R82

-

-

-

Adjustable by R37

UnitsMax.Typ.Min.ConditionsSymbol Parameter

23µs

0.2

5.0

-

80

25

-

-

-

-

0.4 µs

5.8 µs

-

µs

110 µs

t8*

t

t

t

t

6

t

7

t

9

10

11

12

Receiver storage time
Turn-off delay.

Emitter current to 90% I
Minimum off time

90% I

G(ON)

to 10% I

Delay time
Gate volts to o/p emitter current

Turn-off delay
Gate volts to test receiver o/p

Storage time
Gate volts to o/p emitter current

Turn-on delay
Gate volts to test receiver o/p

* t1,t3,t5,t8 are factory settings.

Test circuit
emitter current

Gate Drive Unit Waveforms

G(ON)

FGM

Adjustable by R38 80

Measured at low I

Measured at low I

†

Adjustment of t1 alters t3. 1. Varies with I

t

1

t

2

Control card
receiver output

dIFG/dt

FGM

Gate current

Gate voltage

Control card emitter current

I

0V

10µs

10%

t

3

Min. ON time

-8V

t

4

t

t

9

GQM

I

0.8

1.5

0.2

-

0.8

-

0.1

-

0.3

-

-

-

-

-

GQM

GQM

due to gate lead impedance.

GQM

t

6

t

7

90% I

G(ON)

Q

/dt

GQT

Min. OFF

t

11

t

8

-8V

5

dI

GQ

-

-

-

1

1

1.2 µs

2.3 µs

110 µs

-

-

-

-

µs

µs

µs

µs

2/4

Test circuit receiver output

t

10

t

12

OUTLINE

Clearance underneath P.C.B. for
mounting nuts etc.

5

200 centres

220

V1

I/P

Fibre optics

V2

V3

0V

GDU 90-20721

13

10

Gate

O/P

72

Weight: 2.12Kg

All dimensions in mm, unless stated otherwise. DO NOT SCALE.

Cathode

4 holes
Ø4.4

253 centres

279

3/4

GDU 90-20721

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

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Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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© Dynex Semiconductor 2000 Publication No. DS4567-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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