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WTE
POWER SEM ICONDUCTORS
GBU8A – GBU8K
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction A
!
Low Forward Voltage Drop D
!
High Current Capability J
!
High Reliability C
!
High Surge Current Capability
!
Ideal for Printed Circuit Boards
+ ~ ~ -
E
G K
Mechanical Data H
!
Case: Molded Plastic
!
Terminals: Plated Leads Solderable per M
MIL-STD-202, Method 208
!
Polarity: As Marked on Body
!
Weight: 4.0 grams (approx.) B
!
Mounting Position: Any
!
Marking: Type Number
N
P
L
GBU
Dim Min Max
A
21.80 22.30
B
18.30 18.80
C
7.40 7.90
D
3.50 4.10
E
1.52 2.03
G
2.16 2.54
H
4.83 5.33
J
1.65 2.16
K
1.65 2.03
L
0.76 1.02
M
N
All Dimensions in mm
P
3.30 3.56
17.50 18.00
0.46 0.56
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
Average Rectified Output Current @TC = 100°C
@T
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I2t Rating for Fusing (t < 8.35ms) I2t 166 A2s
Forward Voltage (per element) @IF = 8.0A V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Typical Thermal Resistance (per leg) (Note 1) R
Typical Thermal Resistance (per leg) (Note 2) R
Operating and Storage Tem perature Range T
= 45°C
A
= 100°C
C
RRM
V
RWM
V
R
V
R(RMS)
O
I
FSM
I
FM
R
I
j, TSTG
JA
JC
@TA=25°C unless otherwise specified
50 100 200 400 600 800 V
35 70 140 280 420 560 V
8.0
6.0
200 A
1.0 V
5.0
500
18.0 K/W
3.0 K/W
-55 to +150 °C
A
µA
Note: 1. Thermal resistance junction to ambient, mounted on PCB at 9.5mm lead length with 12mm2 copper pads.
2. Thermal resistance junction to case, mounted on 7.5 x 7.5 x 0.3cm thick AL plate.
GBU8A – GBU8K 1 of 3 © 2002 Won-Top Electronics
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10
Resistive or
Inductive Load
100
8
Heatsink
6
PC Board
4
2
(AV)
I , AVG FORWARD OUTPUT CURRENT (A)
0
0 50 100 150
T,TEMPERATURE(C)
°
Fig. 1 Forward Current Derating Curve
250
200
Single Half-Sine Wave
(JEDEC Method)
I , INSTANTANEOUS FORWARD CURRENT (A)
F
1000
T = 25 Cj°
10
1.0
Pulse width = 300 sµ
0.1
0.2
0.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
0.6 1.0
Fig.2TypicalForwardCharacteristics, per element
100
1.4
T=25Cj°
f = 1.0MHz
1.8
100
T = 25 C
°
j
0
FSM
I , PEAK FORWARD SURGE CURRENT (A)
1 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
j
C , JUNCTION CAPACITANCE (pF)
10
0.1 1.0 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
GBU8A – GBU8K 2 of 3 © 2002 Won-Top Electronics
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ORDERING INFORMA TION
Product No. Package Type Shipping Quantity
GBU8A SIL Bridge 25 Units/Tube
GBU8B SIL Bridge 25 Units/Tube
GBU8D SIL Bridge 25 Units/Tube
GBU8G SIL Bridge 25 Units/Tube
GBU8J SIL Bridge 25 Units/Tube
GBU8K SIL Bridge 25 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone:
Fax:
Email:
Internet:
GBU8A – GBU8K 3 of 3 © 2002 Won-Top Electronics
: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
886-7-822-5408 or 886-7-822-5410
886-7-822-5417
sales@wontop.com
http://www.wontop.com
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