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www.vishay.com
SOT-227
Insulated Gate Bipolar Transistor
PRODUCT SUMMARY
V
CES
DC 75 A at 95 °C
I
C
typical at 75 A, 25 °C 3.3 V
V
CE(on)
(Ultrafast IGBT), 75 A
FEATURES
• NPT Generation V IGBT technology
•Square RBSOA
• Positive V
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
1200 V
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
Vishay Semiconductors
temperature coefficient
CE(on)
GB75SA120UP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Gate to emitter voltage V
Power dissipation P
Isolation voltage V
CES
C
CM
LM
GE
D
ISOL
TC = 25 °C 131
= 80 °C 89
T
C
TC = 25 °C 658
T
= 80 °C 369
C
Any terminal to case, t = 1 min 2500 V
1200 V
200
200
± 20 V
A
W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate threshold voltage V
Temperature coefficient of
threshold voltage
Collector to emitter leakage current I
Gate to emitter leakage current I
V
GE(th)
BR(CES)
CE(on)
GE(th)
CES
GES
VGE = 0 V, IC = 250 μA 1200 - -
VGE = 15 V, IC = 75 A - 3.3 3.8
= 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9
V
GE
VCE = VGE, IC = 250 μA 4 5 6
/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C
VGE = 0 V, VCE = 1200 V - 3 250 μA
= 0 V, VCE = 1200 V, TJ = 150 °C - 4 20 mA
V
GE
VGE = ± 20 V - - ± 200 nA
VCollector to emitter voltage V
Revision: 06-Oct-11
1
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93124
Page 3
GB75SA120UP
www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Reverse bias safe operating area RBSOA
ge
gc
on
off
tot
on
off
tot
d(on)
r
d(off)
g
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 75 A, VCC = 600 V,
V
= 15 V, Rg = 5
GE
L = 500 μH
IC = 75 A, VCC = 600 V,
V
= 15 V, Rg = 5
f
GE
L = 500 μH, T
= 150 °C, IC = 200 A, Rg = 22
T
J
V
= 15 V to 0 V, VCC = 900 V,
GE
= 1200 V, L = 500 μH
V
P
= 125 °C
J
Energy losses
include tail and
diode recovery
(see fig. 18)
Vishay Semiconductors
- 690 -
-65-
- 250 -
-1.53-
-1.76-
-3.29-
-2.49-
-3.45-
-5.94-
- 281 -
-45-
- 300 -
- 126 -
Fullsquare
nCGate to emitter charge (turn-on) Q
mJ
ns
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Junction to case R
Case to sink per module R
Mounting torque, 6-32 or M3 screw - - 1.3 Nm
Weight - 30 - g
, T
T
J
Stg
thJC
thCS
- 40 - 150 °C
- - 0.19
-0.05-
°C/W
Revision: 06-Oct-11
For technical questions within your region: [email protected]
2
Document Number: 93124
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 4
www.vishay.com
Allowable Case Temperature (°C)
IC - Continuous Collector Current (A)
0 20 40 60 80 100 120 140
0
160
100
120
140
20
40
60
80
93124_01
I
C
(A)
VCE (V)
10 100 1000 10 000
1
1000
10
100
93124_02
I
C
(A)
VCE (V)
0246135
0
200
50
100
150
TJ = 125 °C
TJ = 25 °C
93124_03
I
CES
(mA)
V
CES
(V)
0 200 400 600 800 1000 1200
0.0001
10
0.01
1
0.001
0.1
TJ = 125 °C
TJ = 25 °C
93124_04
V
geth
(V)
IC (mA)
0.0002 0.0004 0.0006 0.0008 0.001
3.0
6.0
4.0
4.5
5.0
5.5
3.5
TJ = 125 °C
TJ = 25 °C
93124_05
V
CE
(V)
TJ (°C)
25 50 75 125100 150
2.0
4.5
3.0
3.5
4.0
2.5
100 A
75 A
27 A
93124_06
GB75SA120UP
Vishay Semiconductors
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
= 150 °C, VGE = 15 V
J
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 5 - Typical IGBT Threshold Voltage
Fig. 3 - Typical IGBT Collector Current Characteristics
Revision: 06-Oct-11
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
= 15 V
GE
Document Number: 93124
Page 5
www.vishay.com
0.0001
0.01
0.1
0.001
1
0.00001 0.0001 0.001 0.01 0.1
Rectangular Pulse Duration (t1)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
93124_11
GB75SA120UP
Vishay Semiconductors
4.0
3.5
3.0
2.5
2.0
1.5
Energy (mJ)
1.0
0.5
0
10 20 30 50 60 7040 80
93124_07
Fig. 7 - Typical IGBT Energy Loss vs. I
TJ = 125 °C, L = 500 μH, VCC = 600 V,
1000
100
Switching Time (μs)
E
off
IC (A)
R
= 5 , VGE = 15 V
g
t
f
14
12
10
8
6
E
on
C
t
d(off)
t
d(on)
t
r
Energy (mJ)
4
2
0
0 1020304050
93124_09
Fig. 9 - Typical IGBT Energy Loss vs. R
TJ = 125 °C, IC = 75 A, L = 500 μH,
10 000
1000
100
Switching Time (μs)
RG (Ω)
V
= 600 V, VGE = 15 V
CC
t
f
t
r
E
on
E
off
g
t
d(on)
t
d(off)
Revision: 06-Oct-11
10
020 6040 80
93124_08
Fig. 8 - Typical IGBT Switching Time vs. I
TJ = 125 °C, L = 500 μH, VCC = 600 V,
IC (A)
R
= 5 , VGE = 15 V
g
Fig. 11 - Maximum Thermal Impedance Z
C
4
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
10
0203010 40 50
93124_10
RG (Ω)
Fig. 10 - Typical IGBT Switching Time vs. R
TJ = 125 °C, L = 500 μH, VCC = 600 V,
R
= 5 , VGE = 15 V
g
Characteristics
thJC
Document Number: 93124
g
Page 6
GB75SA120UP
L
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
+
-
R
g
V
CC
+
-
t = 5 µs
t
d(on)
t
f
t
r
90 %
t
d(off)
10 %
90 %
10 %
5 %
V
C
I
C
E
on
E
off
Ets = (Eon + E
off
)
1
2
3
www.vishay.com
L
V
*
50 V
C
1000 V
1
* Driver same type as D.U.T.; VC = 80 % of V
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 12a - Clamped Inductive Load Test Circuit Fig. 12b - Pulsed Collector Current Test Circuit
D.U.T.
2
ce(max)
Vishay Semiconductors
V
CC
R =
I
CM
D.U.T.
R
g
+
-
V
CC
Fig. 13a - Switching Loss Test Circuit
Fig. 13b - Switching Loss Waveforms Test Circuit
Revision: 06-Oct-11
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
Document Number: 93124
Page 7
www.vishay.com
3 (C)
2 (G)
1, 4 (E)
ORDERING INFORMATION TABLE
GB75SA120UP
Vishay Semiconductors
Device code
CIRCUIT CONFIGURATION
G B 75 S A 120 U P
51324678
1 - Insulated Gate Bipolar Transistor (IGBT)
2 - B = IGBT Generation 5
3 - Current rating (75 = 75 A)
4 - Circuit configuration (S = Single switch without antiparallel diode)
5 - Package indicator (A = SOT-227)
6 - Voltage rating (120 = 1200 V)
7 - Speed/type (U = Ultrafast IGBT)
8 - Totally lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95036
Packaging information www.vishay.com/doc?95037
Revision: 06-Oct-11
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6
Document Number: 93124
Page 8
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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