Datasheet GB75DA120UP DataSheet (Vishay)

Insulated Gate Bipolar Transistor

SOT-227

PRODUCT SUMMARY

V

CES

DC 75 A at 95 °C

I

C

typical at 75 A, 25 °C 3.3 V

V

CE(on)

(Ultrafast IGBT), 75 A

FEATURES

• NPT Generation V IGBT technology

• Square RBSOA

•HEXFRED

•Positive V

• Fully isolated package

• Speed 8 kHz to 60 kHz

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

1200 V

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting on heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

GB75DA120UP

Vishay Semiconductors

®

low Qrr, low switching energy

temperature coefficient

CE(on)

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

CES

C

CM

LM

F

GE

D

D

ISOL

TC = 25 °C 131

= 80 °C 89

T

C

TC = 25 °C 59

= 80 °C 39

T

C

TC = 25 °C 658

= 80 °C 369

T

C

TC = 25 °C 240

= 80 °C 135

T

C

Any terminal to case, t = 1 min 2500 V

1200 V

200

200

± 20 V

A

W

Document Number: 93011 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

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GB75DA120UP

Vishay Semiconductors

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown
voltage

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

Collector to emitter leakage current I

Forward voltage drop V

Gate to emitter leakage current I

V

V

GE(th)

BR(CES)

CE(on)

GE(th)

CES

FM

GES

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

ge

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

gc

on

off

tot

on

off

tot

d(on)

r

d(off)

f

rr

rr

rr

rr

VGE = 0 V, IC = 250 μA 1200 - -

VGE = 15 V, IC = 75 A - 3.3 3.8

= 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9

V

GE

VCE = VGE, IC = 250 μA 4 5 6

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C

VGE = 0 V, VCE = 1200 V - 3 250 μA

= 0 V, VCE = 1200 V, TJ = 150 °C - 4 20 mA

V

GE

IC = 75 A, VGE = 0 V - 3.4 5.0

I

= 75 A, VGE = 0 V, TJ = 125 °C - 3.3 5.2

C

VGE = ± 20 V - - ± 200 nA

g

IC = 50 A, VCC = 600 V, VGE = 15 V

- 690 -

-65-

- 250 -

IC = 75 A, VCC = 600 V,

V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

IC = 75 A, VCC = 600 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 125 °C

J

Energy losses
include tail and
diode recovery
(see fig. 18)

-1.53-

-1.76-

-3.29-

-2.49-

-3.45-

-5.94-

- 281 -

-45-

- 300 -

- 126 -

= 150 °C, IC = 200 A, Rg = 22 

T

J

= 15 V to 0 V, VCC = 900 V,

V

GE

= 1200 V, L = 500 μH

V

P

Fullsquare

- 142 210 ns

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V

rr

-1316A

- 923 1680 nC

- 202 260 ns
IF = 50 A, dIF/dt = 200 A/μs,
V

= 200 V, TJ = 125 °C

R

rr

-1822A

- 1818 2860 nC

V

V

nCGate to emitter charge (turn-on) Q

mJ

ns

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Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

0 20 40 60 80 100 120 140

0

160

100

120

140

20

40

60

80

I

C

(A)

VCE (V)

10 100 1000 10 000

1

1000

10

100

GB75DA120UP

Insulated Gate Bipolar Transistor

Vishay Semiconductors

(Ultrafast IGBT), 75 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and
storage temperature range

Junction to case

IGBT

Case to sink per module R

Mounting torque, 6-32 or M3 screw - - 1.3 Nm

Weight -30-g

, T

T

J

Stg

R

thJC

thCS

- 40 - 150 °C

- - 0.19

°C/WDiode - - 0.52

-0.05-

200

150

TJ = 25 °C

100

(A)

C

I

TJ = 125 °C

50

Fig. 1 - Maximum DC IGBT Collector Current vs.

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Revision: 22-Jul-10 [e-mail]

Case Temperature

Fig. 2 - IGBT Reverse Bias SOA

T

= 150 °C, VGE = 15 V

J

0

0246135

VCE (V)

Fig. 3 - Typical IGBT Collector Current Characteristics

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 10203040506070

IF - Continuous Forward Current (A)

Fig. 4 - Maximum DC Forward Current vs.

Case Temperature

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GB75DA120UP

I

F

(A)

VFM (V)

01 3245

0

200

50

150

100

TJ = 125 °C

TJ = 25 °C

I

CES

(mA)

V

CES

(V)

0 200 400 600 800 1000 1200

0.0001

10

0.01

1

0.001

0.1

TJ = 125 °C

TJ = 25 °C

Energy (mJ)

IC (A)

10 20 30 50 60 7040 80

0

4.0

1.5

3.0

2.5

2.0

3.5

1.0

0.5

E

on

E

off

Switching Time (µs)

IC (A)

020 6040 80

10

1000

100

t

d(off)

t

d(on)

t

f

t

r

Vishay Semiconductors

Fig. 5 - Typical Diode Forward Characteristics

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

4.5

4.0

3.5

(V)

CE

V

3.0

2.5

2.0
25 50 75 125100 150

Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.

Junction Temperature, V

100 A

75 A

TJ (°C)

27 A

= 15 V

GE

(V)

geth

V

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Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current

6.0

5.5

5.0

4.5

4.0

3.5

3.0

0.0002 0.0004 0.0006 0.0008 0.001

TJ = 25 °C

TJ = 125 °C

IC (mA)

Fig. 7 - Typical IGBT Threshold Voltage

, [e-mail], [e-mail] Revision: 22-Jul-10

Fig. 9 - Typical IGBT Energy Loss vs. I

TJ = 125 °C, L = 500 μH, VCC = 600 V,

R

= 5 , VGE = 15 V

g

Fig. 10 - Typical IGBT Switching Time vs. I

TJ = 125 °C, L = 500 μH, VCC = 600 V,

R

= 5 , VGE = 15 V

g

C

C

Energy (mJ)

RG (Ω)

0 1020304050

0

14

6

10

8

12

4

2

E

on

E

off

Switching Time (µs)

RG (Ω)

0203010 40 50

10

10 000

1000

100

t

d(on)

t

d(off)

t

f

t

r

t

rr

(ns)

dIF/dt (A/µs)

100 1000

70

250

110

150

190

210

230

90

130

170

TJ = 125 °C

TJ = 25 °C

I

rr

(A)

dIF/dt (A/µs)

100 1000

0

40

10

20

30

35

5

15

25

TJ = 125 °C

TJ = 25 °C

0.0001

0.01

0.1

0.001

1

0.00001 0.0001 0.001 0.01 0.1

Rectangular Pulse Duration (t1)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

1

Single pulse

(thermal response)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

GB75DA120UP

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

Fig. 11 - Typical IGBT Energy Loss vs. R

TJ = 125 °C, IC = 75 A, L = 500 μH,

V

= 600 V, VGE = 15 V

CC

Vishay Semiconductors

g

Fig. 13 - Typical t

V

= 200 V, IF = 50 A

RR

diode vs. dIF/dt

rr

Fig. 12 - Typical IGBT Switching Time vs. R

TJ = 125 °C, L = 500 μH, VCC = 600 V,

Document Number: 93011 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

R

= 5 , VGE = 15 V

g

Fig. 15 - Maximum Thermal Impedance Z

g

Fig. 14 - Typical I

V

RR

Characteristics (IGBT)

thJC

= 200 V, IF = 50 A

diode vs. dIF/dt

rr

, [e-mail], [e-mail] 5

GB75DA120UP

0.001

0.1

0.01

1

0.00001 0.0001 0.001 0.01 0.1

Rectangular Pulse Duration (t1)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

1

Single pulse

(thermal response)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

* Driver same type as D.U.T.; VC = 80 % of V

ce(max)

* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id

50 V

1000 V

D.U.T.

L

V

C

*

2

1

R

g

V

CC

D.U.T.

R =

V

CC

I

CM

+

-

L

Diode clamp/

D.U.T.

D.U.T./

driver

- 5 V

+

-

R

g

V

CC

+

-

Vishay Semiconductors

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

Fig. 16 - Maximum Thermal Impedance Z

Characteristics (diode)

thJC

Fig. 17a - Clamped Inductive Load Test Circuit Fig. 17b - Pulsed Collector Current Test Circuit

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Fig. 18a - Switching Loss Test Circuit

, [e-mail], [e-mail] Revision: 22-Jul-10

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - B = IGBT Generation 5

3 - Current rating (75 = 75 A)

4 - Circuit configuration (D = Single switch with antiparallel diode)

5 - Package indicator (A = SOT-227)

6 - Voltage rating (120 = 1200 V)

8 - Totally lead (Pb)-free

7 - Speed/type (U = Ultrafast IGBT)

Device code

51324678

G B 75 D A 120 U P

GB75DA120UP

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

1

2

3

V

C

90 %

10 %

5 %

I

C

t

d(on)

Fig. 18b - Switching Loss Waveforms Test Circuit

10 %

t

r

E

on

Ets = (Eon + E

90 %

t

d(off)

Vishay Semiconductors

t

f

E

off

)

off

t = 5 µs

ORDERING INFORMATION TABLE

Document Number: 93011 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

, [e-mail], [e-mail] 7

GB75DA120UP

Vishay Semiconductors

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

CIRCUIT CONFIGURATION

3 (C)

2 (G)

1, 4 (E)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95036

Packaging information www.vishay.com/doc?95037

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93011
8 [e-mail]

, [e-mail], [e-mail] Revision: 22-Jul-10

DIMENSIONS in millimeters (inches)

38.30 (1.508)

37.80 (1.488)

-A-

4

12

3

12.50 (0.492)

7.50 (0.295)

Ø 4.40 (0.173)
Ø 4.20 (0.165)

30.20 (1.189)

29.80 (1.173)

15.00 (0.590)

6.25 (0.246)

25.70 (1.012)

25.20 (0.992)

-B-

R full

Chamfer

2.00 (0.079) x 45°

2.10 (0.082)

1.90 (0.075)

8.10 (0.319)

7.70 (0.303)

4 x

2.10 (0.082)

1.90 (0.075)

-C-

0.12 (0.005)

12.30 (0.484)

11.80 (0.464)

MMM

0.25 (0.010)

CA B

4 x M4 nuts

Outline Dimensions

Vishay Semiconductors

SOT-227

Notes

• Dimensioning and tolerancing per ANSI Y14.5M-1982

• Controlling dimension: millimeter

Document Number: 95036 For technical questions, contact: [e-mail]
Revision: 28-Aug-07 1

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