I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I
6
18
GAL22V10
High Performance E2CMOS PLD
Generic Array Logic™
Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
— 4 ns Maximum Propagation Delay
— Fmax = 250 MHz
— 3.5 ns Maximum from Clock Input to Data Output
— UltraMOS® Advanced CMOS Technology
• ACTIVE PULL-UPS ON ALL PINS
• COMPATIBLE WITH STANDARD 22V10 DEVICES
— Fully Function/Fuse-Map/Parametric Compatible
with Bipolar and UVCMOS 22V10 Devices
• 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR
— 90mA T ypical Icc on Low Power Device
— 45mA Typical Icc on Quarter Power Device
2
CELL TECHNOLOGY
•E
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Y ields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
• TEN OUTPUT LOGIC MACROCELLS
— Maximum Flexibility for Complex Logic Designs
• PRELOAD AND POWER-ON RESET OF REGISTERS
— 100% Functional Testability
• APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
• ELECTRONIC SIGNA TURE FOR IDENTIFICATION
ESCRIPTION
Description
Functional Block Diagram
I/CLK
I
I
I
I
I
I
(132X44)
I
AND-ARRAY
PROGRAMMABLE
I
I
I
I
Pin Configuration
PRESET
RESET
8
10
12
14
16
16
14
12
10
8
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
The GAL22V10, at 4ns maximum propagation delay time, combines
a high performance CMOS process with Electrically Erasable (E
floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows
the GAL22V10 to consume much less power when compared to
bipolar 22V10 devices. E
2
technology offers high speed (<100ms)
erase times, providing the ability to reprogram or reconfigure the
device quickly and efficiently .
The generic architecture provides maximum design flexibility by
allowing the Output Logic Macrocell (OLMC) to be configured by
the user. The GAL22V10 is fully function/fuse map/parametric compatible with standard bipolar and CMOS 22V10 devices.
Unique test circuitry and reprogrammable cells allow complete AC,
DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and
data retention in excess of 20 years are specified.
The GAL22V10 has a variable number of product terms per OLMC.
Of the ten available OLMCs, two OLMCs have access to eight
product terms (pins 14 and 23, DIP pinout), two have ten product
terms (pins 15 and 22), two have twelve product terms (pins 16 and
21), two have fourteen product terms (pins 17 and 20), and two
OLMCs have sixteen product terms (pins 18 and 19). In addition
to the product terms available for logic, each OLMC has an additional product-term dedicated to output enable control.
The output polarity of each OLMC can be individually programmed
to be true or inverting, in either combinatorial or registered mode.
This allows each output to be individually configured as either active
high or active low.
AR
D
The GAL22V10 has a product term for Asynchronous Reset (AR)
and a product term for Synchronous Preset (SP). These two product terms are common to all registered OLMCs. The Asynchronous
Reset sets all registers to zero any time this dedicated product term
is asserted. The Synchronous Preset sets all registers to a logic
one on the rising edge of the next clock pulse after this product term
is asserted.
NOTE: The AR and SP product terms will force the Q output of the
flip-flop into the same state regardless of the polarity of the output.
Therefore, a reset operation, which sets the register output to a zero,
may result in either a high or low at the output pin, depending on
the pin polarity chosen.
Q
QCLK
4 TO 1
MUX
SP
2 TO 1
MUX
GAL22V10 OUTPUT LOGIC MACROCELL (OLMC)
Output Logic Macrocell Configurations
Each of the Macrocells of the GAL22V10 has two primary functional
modes: registered, and combinatorial I/O. The modes and the
output polarity are set by two bits (SO and S1), which are normally
controlled by the logic compiler. Each of these two primary modes,
and the bit settings required to enable them, are described below
and on the following page.
REGISTERED
In registered mode the output pin associated with an individual
OLMC is driven by the Q output of that OLMC’s D-type flip-flop.
Logic polarity of the output signal at the pin may be selected by
specifying that the output buffer drive either true (active high) or
inverted (active low). Output tri-state control is available as an individual product-term for each OLMC, and can therefore be defined
by a logic equation. The D flip-flop’s /Q output is fed back into the
AND array, with both the true and complement of the feedback
available as inputs to the AND array.
NOTE: In registered mode, the feedback is from the /Q output of
the register, and not from the pin; therefore, a pin defined as registered is an output only , and cannot be used for dynamic
I/O, as can the combinatorial pins.
COMBINA TORIAL I/O
In combinatorial mode the pin associated with an individual OLMC
is driven by the output of the sum term gate. Logic polarity of the
output signal at the pin may be selected by specifying that the output
buffer drive either true (active high) or inverted (active low). Output tri-state control is available as an individual product-term for
each output, and may be individually set by the compiler as either
“on” (dedicated output), “off” (dedicated input), or “product-term
driven” (dynamic I/O). Feedback into the AND array is from the pin
side of the output enable buffer. Both polarities (true and inverted)
of the pin are fed back into the AND array.
Supply voltage VCC....................................... -0.5 to +7V
Input voltage applied ...........................-2.5 to VCC +1.0V
Off-state output voltage applied...........-2.5 to V
Storage Temperature..................................-65 to 150°C
Ambient T emperature with
Power Applied.........................................-55 to 125°C
1.Stresses above those listed under the “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress only ratings and functional operation of the device
at these or at any other conditions above those indicated in
the operational sections of this specification is not implied
(while programming, follow the programming specifications).
1
Recommended Operating Conditions
Commercial Devices:
) .............................0 to +75°C
A
+1.0V
CC
Ambient T emperature (T
Supply voltage (VCC)
with Respect to Ground ..................... +4.75 to +5.25V
Industrial Devices:
Ambient T emperature (T
) ............................-40 to 85°C
A
Supply voltage (VCC)
with Respect to Ground ..................... +4.50 to +5.50V
DC Electrical Characteristics
Over Recommended Operating Conditions (Unless Otherwise Specified)
SYMBOL P ARAMETER CONDITIONMIN.TYP.3MAX.UNITS
VILInput Low Voltage Vss – 0.5—0.8V
VIHInput High V oltage2.0—Vcc+1V
1
IIL
Input or I/O Low Leakage Current0V ≤ VIN≤ VIL (MAX.)——–100µA
IIHInput or I/O High Leakage Current3.5V ≤ VIN≤ VCC——10µA
VOLOutput Low V oltageIOL = MAX. Vin = VIL or VIH——0.4V
VOHOutput High VoltageIOH = MAX. Vin = VIL or VIH2.4—— V
1) The leakage current is due to the internal pull-up on all pins. See Input Buffer section for more information.
2) One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester
ground degradation. Characterized but not 100% tested.
3) T ypical values are at Vcc = 5V and TA = 25 °C
toggle = 15MHz Outputs OpenL-15/-20/-25—75130mA
6
Page 7
AC Switching Characteristics
Specifications GAL22V10D
SpecificationsGAL22V10
Over Recommended Operating Conditions
PARAM
TEST
COND.
COM
1
DESCRIPTION
-4
MIN. MAX.
-5
MIN. MAX.
COM/INDCOM
-7
MIN. MAX.
tpdAInput or I/O to Combinatorial Output141517.5ns
tcoAClock to Output Delay13.51414.5ns
2
tcf
—Clock to Feedback Delay—2.5—3—3ns
tsu—Setup Time, Input or Fdbk before Clk↑2.5—3—4.5—ns
th—Hold Time, Input or Fdbk after Clk↑0—0—0—ns
AMaximum Clock Frequency with167— 142.8 —111—MHz
External Feedback, 1/(tsu + tco)
3
fmax
AMaximum Clock Frequency with200—166—133—MHz
Internal Feedback, 1/(tsu + tcf)
AMaximum Clock Frequency with250—200—166—MHz
No Feedback
twh—Clock Pulse Duration, High2—2.5—3—ns
twl—Clock Pulse Duration, Low2—2.5—3—ns
tenBInput or I/O to Output Enabled151617.5ns
tdisCInput or I/O to Output Disabled1515.517.5ns
UNITS
tarAInput or I/O to Asynch. Reset of Reg.14.515.519ns
tarw—Asynch. Reset Pulse Duration4.5—4.5—7—ns
tarr—Asynch. Reset to Clk↑ Recovery Time3—4—5—ns
tspr—Synch. Preset to Clk↑ Recovery Time3—4—5—ns
1) Refer to Switching T est Conditions section.
2) Calculated from fmax with internal feedback. Refer to fmax Description section.
3) Refer to fmax Description section. Characterized initially and after any design or process changes that may affect these
parameters.
Capacitance (TA = 25°C, f = 1.0 MHz)
SYMBOLPARAMETERMAXIMUM*UNITSTEST CONDITIONS
C
I
C
I/O
*Characterized but not 100% tested.
Input Capacitance8pFVCC = 5.0V , VI = 2.0V
I/O Capacitance8pFVCC = 5.0V , V
= 2.0V
I/O
7
Page 8
SpecificationsGAL22V10
Specifications GAL22V10D
AC Switching Characteristics
Over Recommended Operating Conditions
COM / INDINDCOM / INDCOM / IND
PARAM.
TEST
COND.
DESCRIPTION
1
-10
MIN. MAX.
-15
MIN. MAX.
-20
MIN. MAX.
-25
MIN. MAX.
tpdAInput or I/O to Comb. Output110315320325ns
tcoAClock to Output Delay1728210215ns
2
tcf
—Clock to Feedback Delay—2.5—2.5—8—13ns
tsu—Setup Time, Input or Fdbk before Clk↑6—10—12—15—ns
th—Hold Time, Input or Fdbk after Clk↑0—0—0—0—ns
AMaximum Clock Frequency with83.3—55.5—41.6—33.3—MHz
External Feedback, 1/(tsu + tco)
3
fmax
AMaximum Clock Frequency with1 10—80—45.4—35.7—MHz
Internal Feedback, 1/(tsu + tcf)
AMaximum Clock Frequency with125—83.3—50—38.5—MHz
No Feedback
UNITS
twh—Clock Pulse Duration, High4—6—10—13—ns
twl—Clock Pulse Duration, Low4—6—10—13—ns
tenBInput or I/O to Output Enabled110315320325ns
tdisCInput or I/O to Output Disabled19315320325ns
tarAInput or I/O to Asynch. Reset of Reg.113320325325ns
tarw—Asynch. Reset Pulse Duration8—15—20—25—ns
tarr—Asynch. Reset to Clk↑ Recovery Time8—10—20—25—ns
tspr—Synch. Preset to Clk↑ Recovery Time8—10—14—15—ns
1) Refer to Switching T est Conditions section.
2) Calculated from fmax with internal feedback. Refer to fmax Description section.
3) Refer to fmax Description section.
Capacitance (TA = 25°C, f = 1.0 MHz)
SYMBOLPARAMETERMAXIMUM*UNITSTEST CONDITIONS
C
I
C
I/O
*Characterized but not 100% tested.
Input Capacitance8pFVCC = 5.0V , VI = 2.0V
I/O Capacitance8pFVCC = 5.0V , V
= 2.0V
I/O
8
Page 9
SpecificationsGAL22V10
Specifications GAL22V10C
Absolute Maximum Ratings
Supply voltage VCC....................................... -0.5 to +7V
Input voltage applied ...........................-2.5 to VCC +1.0V
Off-state output voltage applied ..........-2.5 to VCC +1.0V
Storage Temperature .................................-65 to 150°C
Ambient T emperature with
Power Applied.........................................-55 to 125°C
1.Stresses above those listed under the “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress only ratings and functional operation of the device
at these or at any other conditions above those indicated in
the operational sections of this specification is not implied
(while programming, follow the programming specifications).
1
Recommended Operating Conditions
Commercial Devices:
Ambient T emperature (T
) .............................0 to +75°C
A
Supply voltage (VCC)
with Respect to Ground ..................... +4.75 to +5.25V
Industrial Devices:
Ambient T emperature (T
Supply voltage (V
CC
) ............................-40 to 85°C
A
)
with Respect to Ground ..................... +4.50 to +5.50V
DC Electrical Characteristics
Over Recommended Operating Conditions (Unless Otherwise Specified)
3
SYMBOLPARAMETERCONDITIONMIN.TYP.
MAX.UNITS
VILInput Low Voltage Vss – 0.5—0.8V
VIHInput High Voltage2.0—Vcc+1V
1
IIL
Input or I/O Low Leakage Current0V ≤ VIN≤ VIL (MAX.)——–100µA
IIHInput or I/O High Leakage Current3.5V ≤ VIN≤ VCC——10µA
VOLOutput Low V oltageIOL = MAX. Vin = VIL or VIH——0.5V
VOHOutput High VoltageIOH = MAX. Vin = VIL or VIH2.4—— V
Output Short Circuit CurrentVCC = 5V VOUT = 0.5V TA = 25°C–30—–130mA
COMMERCIAL
ICCOperating Power Supply CurrentVIL = 0.5V VIH = 3.0VL-5—90150mA
ftoggle = 15MHz Outputs OpenL-7—90140mA
L-10—90130mA
INDUSTRIAL
ICCOperating Power Supply CurrentVIL = 0.5V VIH = 3.0VL-7/-10—90160mA
toggle = 15MHz Outputs Open
f
1) The leakage current is due to the internal pull-up on all pins. See Input Buffer section for more information.
2) One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester
ground degradation. Characterized but not 100% tested.
3) T ypical values are at Vcc = 5V and TA = 25 °C
9
Page 10
AC Switching Characteristics
SpecificationsGAL22V10
Specifications GAL22V10C
Over Recommended Operating Conditions
PARAM
TEST
COND.
DESCRIPTION
1
-5
MIN. MAX.
COM/INDCOM
-7 (PLCC)
MIN. MAX.
-7 (PDIP)
MIN. MAX.
COMCOM/IND
-10
MIN. MAX.
IND
-10
MIN. MAX.
tpdAInput or I/O to Combinatorial Output1517.517.5310110ns
tcoAClock to Output Delay1414.514.52717ns
2
tcf
—Clock to Feedback Delay—3—3—3—2.5—2.5ns
tsu—Setup Time, Input or Fdbk before Clk↑3—4.5—5—7—7—ns
th—Hold Time, Input or Fdbk after Clk↑0—0—0—0—0—ns
AMaximum Clock Frequency with142.8 —111—105—71.4—71.4—MHz
External Feedback, 1/(tsu + tco)
3
fmax
AMaximum Clock Frequency with166—133—125—105—105—MHz
Internal Feedback, 1/(tsu + tcf)
AMaximum Clock Frequency with200—166— 142.8—105—105—MHz
No Feedback
twh—Clock Pulse Duration, High2.5—3—3.5—4—4—ns
twl—Clock Pulse Duration, Low2.5—3—3.5—4—4—ns
tenBInput or I/O to Output Enabled1617.517.5310110ns
tdisCInput or I/O to Output Disabled1617.517.53919ns
UNITS
tarAInput or I/O to Asynch. Reset of Reg.15.51919313113ns
tarw—Asynch. Reset Pulse Duration5.5—7—7—8—8—ns
tarr—Asynch. Reset to Clk↑ Recovery Time4—5—5—8—8—ns
tspr—Synch. Preset to Clk↑ Recovery Time4—5—5—10—10—ns
1) Refer to Switching T est Conditions section.
2) Calculated from fmax with internal feedback. Refer to fmax Description section.
3) Refer to fmax Description section. Characterized initially and after any design or process changes that may affect these
parameters.
Capacitance (TA = 25°C, f = 1.0 MHz)
SYMBOLPARAMETERMAXIMUM*UNITSTEST CONDITIONS
C
I
C
I/O
*Characterized but not 100% tested.
Input Capacitance8pFVCC = 5.0V , VI = 2.0V
I/O Capacitance8pFVCC = 5.0V , V
= 2.0V
I/O
10
Page 11
SpecificationsGAL22V10
Specifications GAL22V10B
Absolute Maximum Ratings
Supply voltage VCC....................................... -0.5 to +7V
Input voltage applied ...........................-2.5 to VCC +1.0V
Off-state output voltage applied ..........-2.5 to V
Storage Temperature .................................-65 to 150°C
Ambient T emperature with
Power Applied.........................................-55 to 125°C
1.Stresses above those listed under the “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress only ratings and functional operation of the device
at these or at any other conditions above those indicated in
the operational sections of this specification is not implied
(while programming, follow the programming specifications).
1
Recommended Operating Conditions
Commercial Devices:
+1.0V
CC
Ambient T emperature (T
Supply voltage (VCC)
with Respect to Ground ..................... +4.75 to +5.25V
) .............................0 to +75°C
A
Industrial Devices:
Ambient T emperature (T
Supply voltage (V
CC
) ............................-40 to 85°C
A
)
with Respect to Ground ..................... +4.50 to +5.50V
DC Electrical Characteristics
Over Recommended Operating Conditions (Unless Otherwise Specified)
SYMBOLPARAMETERCONDITIONMIN.TYP.3MAX.UNITS
VILInput Low Voltage Vss – 0.5—0.8V
VIHInput High Voltage2.0—Vcc+1V
1
IIL
Input or I/O Low Leakage Current0V ≤ VIN≤ VIL (MAX.)——–100µA
IIHInput or I/O High Leakage Current3.5V ≤ VIN≤ VCC——10µA
VOLOutput Low V oltageIOL = MAX. Vin = VIL or VIH——0.5V
VOHOutput High VoltageIOH = MAX. Vin = VIL or VIH2.4—— V
1) The leakage current is due to the internal pull-up on all pins. See Input Buffer section for more information.
2) One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester
ground degradation. Characterized but not 100% tested.
3) T ypical values are at Vcc = 5V and TA = 25 °C
toggle = 15MHz Outputs Open
11
Page 12
SpecificationsGAL22V10
Specifications GAL22V10B
AC Switching Characteristics
AC SWITCHING CHARACTERISTICS
Over Recommended Operating Conditions
COM / IND
-25
MIN. MAX.
PARAM.
TEST
COND.
DESCRIPTION
1
COMCOMCOM / INDIND
-7
MIN. MAX.
-10
MIN. MAX.
-15
MIN. MAX.
-20
MIN. MAX.
tpdAInput or I/O to Comb. Output37.5310315320325ns
tcoAClock to Output Delay252728210215ns
2
tcf
—Clock to Feedback Delay—2.5—2.5—2.5—8—13ns
UNITS
tsu
tsu
—Setup Time, Input or Fdbk before Clk↑ 6.5—7—10—14—15—ns
1
—Setup Time, SP before Clock↑10—10—10—14—15—ns
2
th—Hold Time, Input or Fdbk after Clk↑0—0—0—0—0—ns
AMaximum Clock Frequency with87—71.4—55.5—41.6—33.3—MHz
External Feedback, 1/(tsu + tco)
3
fmax
AMaximum Clock Frequency with1 11—105—80—45.4—35.7—MHz
Internal Feedback, 1/(tsu + tcf)
AMaximum Clock Frequency with1 11—105—83.3—50—38.5—MHz
No Feedback
twh—Clock Pulse Duration, High4—4—6—10—13—ns
twl—Clock Pulse Duration, Low4—4—6—10—13—ns
tenBInput or I/O to Output Enabled38310315320325ns
tdisCInput or I/O to Output Disabled3839315320325ns
tarAInput or I/O to Asynch. Reset of Reg.313313320325325ns
tarw—Asynch. Reset Pulse Duration8—8—15—20—25—ns
tarr—Asynch. Reset to Clk↑ Recovery Time8—8—10—20—25—ns
tspr—Synch. Preset to Clk↑ Recovery Time10—10—10—14—15—ns
1) Refer to Switching T est Conditions section.
2) Calculated from fmax with internal feedback. Refer to fmax Description section.
3) Refer to fmax Description section.
Capacitance (TA = 25°C, f = 1.0 MHz)
SYMBOLPARAMETERMAXIMUM*UNITSTEST CONDITIONS
C
I
C
I/O
*Characterized but not 100% tested.
Input Capacitance8pFVCC = 5.0V , VI = 2.0V
I/O Capacitance8pFVCC = 5.0V , V
12
= 2.0V
I/O
Page 13
INPUT or
I/O FEEDBACK
REGISTERED
OUTPUT
CLK
VALID INPUT
t
su
t
co
t
h
(external fdbk)
1/ fmax
Switching Waveforms
Specifications GAL22V10
INPUT or
I/O FEEDBACK
COMBINATORIAL
OUTPUT
INPUT or
I/O FEEDBACK
OUTPUT
Input or I/O to Output Enable/Disable
VALID INPUT
Combinatorial Output
t
dis
t
pd
Registered Output
t
en
CLK
1/ fmax (internal fdbk)
t
cft
REGISTERED
FEEDBACK
su
CLK
INPUT or
I/O FEEDBACK
DRIVING SP
CLK
REGISTERED
OUTPUT
Clock Width
t
wh
1/
f
(w/o fdbk)
t
su
max
fmax with Feedback
t
wl
INPUT or
I/O FEEDBACK
DRIVING AR
t
h
t
spr
CLK
t
co
REGISTERED
OUTPUT
Asynchronous ResetSynchronous Preset
t
arw
t
ar
t
arr
13
Page 14
fmax Descriptions
Specifications GAL22V10
CLK
LOGIC
ARRAY
t
su
REGISTER
t
co
fmax with External Feedback 1/(tsu+tco)
Note: fmax with external feedback is cal-
culated from measured tsu and tco.
CLK
LOGIC
ARRAY
t
su + th
REGISTER
fmax with No Feedback
Note: fmax with no feedback may be less
than 1/(twh + twl). This is to allow for a
clock duty cycle of other than 50%.
CLK
LOGIC
ARRAY
REGISTER
t
cf
t
pd
fmax with Internal Feedback 1/(tsu+tcf)
Note: tcf is a calculated value, derived by sub-
tracting tsu from the period of fmax w/internal
feedback (tcf = 1/fmax - tsu). The value of tcf is
used primarily when calculating the delay from
clocking a register to a combinatorial output
(through registered feedback), as shown above.
For example, the timing from clock to a combinatorial output is equal to tcf + tpd.
14
Page 15
Switching Test Conditions
Specifications GAL22V10
Input Pulse LevelsGND to 3.0V
Input Rise andD-4/-5/-7, C-51.5ns 10% – 90%
Fall TimesD-10/-15/-20/-252.0ns 10% – 90%
3-state levels are measured 0.5V from steady-state active
level.
Output Load Conditions (except D-4) (see figure below)
T est ConditionR
1R2CL
A300Ω390Ω50pF
BActive High∞390Ω50pF
Active Low300Ω390Ω50pF
CActive High∞390Ω5pF
Active Low300Ω390Ω5pF
+5V
GAL22V10D-4 Output Load Conditions (see figure below)
T est ConditionR
1CL
A50Ω50pF
BZ to Active High at 1.9V50Ω50pF
Z to Active Low at 1.0V50Ω50pF
CActive High to Z at 1.9V50Ω50pF
Active Low to Z at 1.0V50Ω50pF
+1.45V
FROM OUTPUT (O/Q)
UNDER TEST
TEST POINT
Z
= 50Ω, CL*
0
R
1
R
1
FROM OUTPUT (O/Q)
UNDER TEST
R
2
*C
INCLUDES TEST FIXTURE AND PROBE CAPACITANCE
L
C *
L
TEST POINT
15
Page 16
Specifications GAL22V10
Electronic Signature
An electronic signature (ES) is provided in every GAL22V10
device. It contains 64 bits of reprogrammable memory that can
contain user-defined data. Some uses include user ID codes,
revision numbers, or inventory control. The signature data is
always available to the user independent of the state of the security cell.
The electronic signature is an additional feature not present in
other manufacturers' 22V10 devices. To use the extra feature of
the user-programmable electronic signature it is necessary to
choose a Lattice Semiconductor 22V10 device type when compiling a set of logic equations. In addition, many device programmers have two separate selections for the device, typically a
GAL22V10 and a GAL22V10-UES (UES = User Electronic Signature) or GAL22V10-ES. This allows users to maintain compatibility with existing 22V10 designs, while still having the option to
use the GAL device's extra feature.
The JEDEC map for the GAL22V10 contains the 64 extra fuses
for the electronic signature, for a total of 5892 fuses. However,
the GAL22V10 device can still be programmed with a standard
22V10 JEDEC map (5828 fuses) with any qualified device programmer.
Security Cell
A security cell is provided in every GAL22V10 device to prevent
unauthorized copying of the array patterns. Once programmed,
this cell prevents further read access to the functional bits in the
device. This cell can only be erased by re-programming the
device, so the original configuration can never be examined once
this cell is programmed. The Electronic Signature is always available to the user, regardless of the state of this control cell.
Output Register Preload
When testing state machine designs, all possible states and state
transitions must be verified in the design, not just those required
in the normal machine operations. This is because certain events
may occur during system operation that throw the logic into an
illegal state (power-up, line voltage glitches, brown-outs, etc.). To
test a design for proper treatment of these conditions, a way must
be provided to break the feedback paths, and force any desired
(i.e., illegal) state into the registers. Then the machine can be
sequenced and the outputs tested for correct next state conditions.
The GAL22V10 device includes circuitry that allows each registered output to be synchronously set either high or low. Thus, any
present state condition can be forced for test sequencing. If
necessary, approved GAL programmers capable of executing test
vectors perform output register preload automatically .
Input Buffers
GAL22V10 devices are designed with TTL level compatible input buffers. These buffers have a characteristically high impedance, and present a much lighter load to the driving logic than bipolar TTL devices.
The input and I/O pins also have built-in active pull-ups. As a result, floating inputs will float to a TTL high (logic 1). However,
Lattice Semiconductor recommends that all unused inputs and
tri-stated I/O pins be connected to an adjacent active input, Vcc,
or ground. Doing so will tend to improve noise immunity and
reduce Icc for the device. (See equivalent input and I/O schematics on the following page.)
T ypical Input Current
Latch-Up Protection
GAL22V10 devices are designed with an on-board charge pump
to negatively bias the substrate. The negative bias is of sufficient
magnitude to prevent input undershoots from causing the circuitry
to latch. Additionally , outputs are designed with n-channel pullups
instead of the traditional p-channel pullups to eliminate any possibility of SCR induced latching.
Device Programming
GAL devices are programmed using a Lattice Semiconductorapproved Logic Programmer, available from a number of manufacturers (see the the GAL Development Tools section). Complete programming of the device takes only a few seconds. Erasing of the device is transparent to the user, and is done automatically as part of the programming cycle.
16
0
-20
-40
Input Current (uA)
-60
0
1.02.03.04.05.0
Input Voltage (Volts)
Page 17
Power-Up Reset
Specifications GAL22V10
Vcc
CLK
INTERNAL REGISTER
Q - OUTPUT
ACTIVE LOW
OUTPUT REGISTER
ACTIVE HIGH
OUTPUT REGISTER
Vcc (min.)
Circuitry within the GAL22V10 provides a reset signal to all registers during power-up. All internal registers will have their Q outputs set low after a specified time (tpr, 1µs MAX). As a result, the
state on the registered output pins (if they are enabled) will be
either high or low on power-up, depending on the programmed
polarity of the output pins. This feature can greatly simplify state
machine design by providing a known state on power-up. The
timing diagram for power-up is shown below. Because of the asyn-
t
su
t
wl
pr
t
Internal Register
Reset to Logic "0"
Device Pin
Reset to Logic "1"
Device Pin
Reset to Logic "0"
chronous nature of system power-up, some conditions must be
met to guarantee a valid power-up reset of the GAL22V10. First,
the Vcc rise must be monotonic. Second, the clock input must
be at static TTL level as shown in the diagram during power up.
The registers will reset within a maximum of tpr time. As in normal system operation, avoid clocking the device until all input and
feedback path setup times have been met. The clock must also
meet the minimum pulse width requirements.
Input/Output Equivalent Schematics
PIN
Vcc
(Vref Typical = 3.2V)
ESD
Protection
Circuit
PIN
ESD
Protection
Circuit
Active Pull-up
Circuit
Vcc
Vref
Vcc
T ypical InputT ypical Output
Data
Output
Feedback
Tri-State
Control
Active Pull-up
Circuit
Vcc
Feedback
(To Input Buffer)
PIN
(Vref Typical = 3.2V)
Vref
PIN
17
Page 18
Specifications GAL22V10
GAL22V10D-4/-5/-7/-10L (PLCC): Typical AC and DC Characteristic Diagrams
Normalized Tpd vs Vcc
1.1
1.05
1
0.95
Normalized TpdNormalized Tpd
0.9
RISE
FALL
Normalized TcoNormalized Tco
5.55.2554.754.5
Normalized Tco vs Vcc
1.1
1.05
1
0.95
0.9
RISE
FALL
1.05
0.95
Normalized TNormalized Tsu
5.55.2554.754.55.55.2554.754.5
Normalized Tsu vs Vcc
1.1
1
0.9
RISE
FALL
Supply Voltage (V)Supply Voltage (V)Supply Voltage (V)
Normalized Tpd vs TempNormalized Tco vs TempNormalized Tsu vs Temp
1.3
1.2
1.1
0.9
0.8
RISE
FALL
1
1251007550250-25-55
1.2
RISE
1.1
1
0.9
FALL
1251007550250-25-55
1.3
1.2
1.1
1
0.9
0.8
RISE
FALL
1251007550250-25-55
Temperature (deg. C)Temperature (deg. C)Temperature (deg. C)
Delta Tpd vs # of Outputs
0
-0.1
-0.2
Delta Tpd (ns)
-0.3
12345678910
Switching
Number of Outputs Switching
Delta Tpd vs Output Loading
12
RISE
FALL
Delta Tpd (ns)
8
4
0
-4
Output Loading (pF)
RISE
FALL
Delta Tco vs # of Outputs
0
-0.1
-0.2
Delta Tco (ns)Delta Tco (ns)
-0.3
-0.4
12345678910
Switching
RISE
FALL
Number of Outputs Switching
Delta Tco vs Output Loading
12
8
4
0
300250200150100500
-4
RISE
FALL
300250200150100500
Output Loading (pF)
18
Page 19
Specifications GAL22V10
GAL22V10D-4/-5/-7/-10L (PLCC): Typical AC and DC Characteristic Diagrams
Vol vs Iol
0.6
0.4
Vol (V)
0.2
0
0510 15 20 25 30 35 40
Iol (mA)
Normalized Icc vs Vcc
1.2
1.1
1
0.9
Normalized Icc
0.8
4.54.7555.255.5
Supply Voltage (V)
Voh vs Ioh
4
3
2
Voh (V)
1
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Ioh(mA)
Normalized Icc vs Temp
1.3
1.2
1.1
1
0.9
Normalized Icc
0.8
0.7
-55-25 0 255088100125
Temperature (deg. C)
Voh vs Ioh
3.95
3.85
3.75
3.65
3.55
Voh (V)
3.45
3.35
3.25
3.15
0.001.002.003.004.005.00
Ioh(mA)
Normalized Icc vs Freq
1.2
1.15
1.1
1.05
Normalized Icc
1
0.95
1 15255075100
Frequency (MHz)
Delta Icc vs Vin (1 input)
6
5
4
3
2
Delta Icc (mA)
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Vin (V)
Iik (mA)
Input Clamp (Vik)
0
20
40
60
80
100
-3
-2.5-2-1.5-1-0.51
Vik (V)
19
Page 20
Specifications GAL22V10
GAL22V10D-7/10L (PDIP): Typical AC and DC Characteristic Diagrams
Normalized Tpd vs Vcc
1.1
1.05
1
0.95
Normalized Tpd
0.9
4.54.7555.255.5
RISE
FALL
Supply Voltage (V)
Normalized Tpd vs Temp
1.3
1.2
1.1
1
Normalized Tpd
0.9
0.8
-55 -250255075100 125
RISE
FALL
Temperature (deg. C)
Normalized Tco vs Vcc
1.1
RISE
1.05
1
FALL
Normalized Tco
0.95
4.54.7555.255.5
Supply Voltage (V)
Normalized Tco vs Temp
1.2
1.1
1
Normalized Tco
0.9
0.8
-55 -250255075 100 125
RISE
FALL
Temperature (deg. C)
Normalized Tsu vs Vcc
1.2
1.1
1
0.9
Normalized Tsu
0.8
4.54.7555.255.5
RISE
FALL
Supply Voltage (V)
Normalized Tsu vs Temp
1.3
1.2
1.1
1
Normalized Tsu
0.9
0.8
-55 -250255075100 125
RISE
FALL
Temperature (deg. C)
Delta Tpd vs # of Outputs
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
Delta Tpd (ns)
-0.8
-0.9
-1
-1.1
12345678910
Switching
Number of Outputs Switching
Delta Tpd vs Output Loading
12
8
4
Delta Tpd (ns)
0
-4
RISE
FALL
050100150200250300
Output Loading (pF)
RISE
FALL
Delta Tco vs # of Outputs
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
Delta Tco (ns)
-0.8
-0.9
-1
-1.1
12345678910
Switching
Number of Outputs Switching
Delta Tco vs Output Loading
12
8
4
Delta Tco (ns)
0
-4
050100150200250300
RISE
FALL
Output Loading (pF)
RISE
FALL
20
Page 21
Specifications GAL22V10
GAL22V10D-7/10L (PDIP): Typical AC and DC Characteristic Diagrams
Vol vs Iol
0.5
0.4
0.3
0.2
Vol (V)
0.1
0
051015202530
Iol (mA)
Normalized Icc vs Vcc
1.15
1.1
1.05
1
0.95
Normalized Icc
0.9
0.85
4.54.7555.255.5
Supply Voltage (V)
Voh vs Ioh
4
3
2
Voh (V)
1
0
0510 152025 3035 40
Ioh (mA)
Normalized Icc vs Temp
1.3
1.2
1.1
1
0.9
Normalized Icc
0.8
0.7
-55025100
Temperature (deg. C)
Voh vs Ioh
3.8
3.7
3.6
3.5
3.4
3.3
3.2
Voh (V)
3.1
3
2.9
2.8
0.001.002.003.004.005.00
Ioh (mA)
Normalized Icc vs Freq
1.2
1.15
1.1
1.05
Normalized Icc
1
0.95
1 15255075100
Frequency (MHz)
Delta Isb vs Vin (1 input)
10
9
8
7
6
5
4
3
Delta Icc (mA)
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Vin (V)
Input Clamp (Vik)
0
10
20
30
40
50
60
Iik (mA)
70
80
90
100
-2.5-2-1.5-1-0.50
Vik (V)
21
Page 22
Specifications GAL22V10
GAL22V10D-10Q and Slower (L & Q): Typical AC and DC Characteristic Diagrams
Normalized Tpd vs Vcc
1.1
1.05
1
0.95
Normalized Tpd
0.9
4.54.7555.255.5
Supply Voltage (V)
Normalized Tpd vs Temp
1.3
1.2
1.1
1
0.9
Normalized Tpd
0.8
RISE
FALL
-55 -250255075 100 125
Temperature (deg. C)
RISE
FALL
Normalized Tco vs Vcc
1.15
1.1
1.05
1
Normalized Tco
0.95
0.9
4.54.7555.255.5
RISE
FALL
Supply Voltage (V)
Normalized Tco vs Temp
1.3
1.2
1.1
1
Normalized Tco
0.9
0.8
-55 -250255075 100 125
RISE
FALL
Temperature (deg. C)
Normalized Tsu vs Vcc
1.2
1.1
1
0.9
Normalized Tsu
0.8
4.54.7555.255.5
Supply Voltage (V)
Normalized Tsu vs Temp
1.45
1.35
1.25
1.15
1.05
0.95
Normalized Tsu
0.85
0.75
-55 -250255075100 125
RISE
FALL
Temperature (deg. C)
RISE
FALL
Delta Tpd vs # of Outputs
0
-0.4
-0.8
Switching
Delta Tpd (ns)
-1.2
12345678910
Number of Outputs Switching
Delta Tpd vs Output Loading
20
Delta Tpd (ns)
16
12
8
4
0
-4
-8
RISE
FALL
050100150 200250300
Output Loading (pF)
RISE
FALL
Delta Tco vs # of Outputs
0
-0.4
-0.8
Switching
Delta Tco (ns)
-1.2
12345678910
Number of Outputs Switching
Delta Tco vs Output Loading
20
16
12
8
4
Delta Tco (ns)
0
-4
050100150 200250 3 00
RISE
FALL
Output Loading (pF)
RISE
FALL
22
Page 23
Specifications GAL22V10
GAL22V10DQ-10 and Slower (L & Q): Typical AC and DC Characteristic Diagrams
Vol vs Iol
0.6
0.4
Vol (V)
0.2
0
0510 15 20 25 3035 4 0
Iol (mA)
Normalized Icc vs Vcc
1.2
1.1
1
0.9
Normalized Icc
0.8
4.54.7555.255.5
Supply Voltage (V)
Voh vs Ioh
4.5
4
3.5
3
2.5
2
Voh (V)
1.5
1
0.5
0
0204060
Ioh (mA)
Normalized Icc vs Temp
1.35
1.25
1.15
1.05
0.95
Normalized Icc
0.85
0.75
-55 -250255088100 125
Temperature (deg. C)
Voh vs Ioh
4.5
4
3.5
Voh (V)
3
2.5
0.001.002.003.004.005.00
Ioh (mA)
Normalized Icc vs Freq
1.4
1.3
1.2
1.1
Normalized Icc
1
0.9
1 15255075100
Frequency (MHz)
Delta Icc vs Vin (1 input)
7
6
5
4
3
2
Delta Icc (mA)
1
0
00.511.522.533.544.55
Vin (V)
Input Clamp (Vik)
0
10
20
30
40
50
Iik (mA)
60
70
80
90
-2.5-2-1.5-1-0.50
Vik (V)
23
Page 24
Specifications GAL22V10
GAL22V10C-5/-7/-10: Typical AC and DC Characteristic Diagrams
Normalized Tpd vs Vcc
1.2
1.1
1
0.9
Normalized Tpd
0.8
4.504.755.005.255.50
Supply Voltage (V)
Normalized Tpd vs Temp
1.3
1.2
1.1
1
0.9
Normalized Tpd
0.8
0.7
-55 -25025507 5 100 125
PT H->L
PT L->H
Temperature (deg. C)
PT H->L
PT L->H
Normalized Tco vs Vcc
1.2
1.1
1
0.9
Normalized Tco
0.8
4.504.755.005.255.50
Supply Voltage (V)
Normalized Tco vs Temp
1.3
1.2
1.1
1
0.9
Normalized Tco
0.8
0.7
-55 -25025507 5 100 125
RISE
FALL
Temperature (deg. C)
RISE
FALL
Normalized Tsu vs Vcc
1.2
1.1
1
0.9
Normalized Tsu
0.8
4.504.755.005.255.50
PT H->L
PT L->H
Supply Voltage (V)
Normalized Tsu vs Temp
1.4
1.3
1.2
1.1
1
0.9
Normalized Tsu
0.8
0.7
-55 -250255075 100 125
PT H->L
PT L->H
Temperature (deg. C)
Delta Tpd vs # of Outputs
Switching
0
-0.25
-0.5
-0.75
-1
Delta Tpd (ns)
-1.25
-1.5
12345678910
Number of Outputs Switching
Delta Tpd vs Output Loading
12
10
8
6
4
2
Delta Tpd (ns)
0
-2
050100150200250300
RISE
FALL
Output Loading (pF)
RISE
FALL
Delta Tco vs # of Outputs
Switching
0
-0.25
-0.5
-0.75
Delta Tco (ns)
-1
12345678910
Number of Outputs Switching
Delta Tco vs Output Loading
12
10
8
6
4
2
Delta Tco (ns)
0
-2
050100150200250300
RISE
FALL
Output Loading (pF)
RISE
FALL
24
Page 25
Specifications GAL22V10
GAL22V10C-5/-7/-10: Typical AC and DC Characteristic Diagrams
Vol vs Iol
3
2.5
2
1.5
Vol (V)
1
0.5
0
0.0020.00 40.00 60.00 80.00 100.00
Iol (mA)
Normalized Icc vs Vcc
1.20
1.10
1.00
0.90
Normalized Icc
0.80
4.504.755.005.255.50
Supply Voltage (V)
Voh vs Ioh
5
4
3
2
Voh (V)
1
0
0.00 10.00 20.00 30.00 40.00 50.00 60.00
Ioh(mA)
Normalized Icc vs Temp
1.2
1.1
1
0.9
Normalized Icc
0.8
-55 -250255075 100 125
Temperature (deg. C)
Voh vs Ioh
4
3.75
3.5
Voh (V)
3.25
3
0.001.002.003.004.00
Ioh(mA)
Normalized Icc vs Freq.
1.30
1.20
1.10
1.00
Normalized Icc
0.90
0255075100
Frequency (MHz)
Delta Icc vs Vin (1 input)
10
8
6
4
Delta Icc (mA)
2
0
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00
Vin (V)
Input Clamp (Vik)
0
10
20
30
40
Iik (mA)
50
60
70
-2.50-2.00-1.50-1.00-0.500.00
Vik (V)
25
Page 26
Specifications GAL22V10
GAL22V10B-7/-10/-15/-25L: Typical AC and DC Characteristic Diagrams
Normalized Tpd vs Vcc
1.2
1.1
1
0.9
Normalized Tpd
0.8
4.504.755.005.255.50
Supply Voltage (V)
Normalized Tpd vs Temp
1.3
-55
-25
PT H->L
PT L->H
0
25
50
75
1.2
1.1
1
0.9
Normalized Tpd
0.8
0.7
Temperature (deg. C)
PT H->L
PT L->H
100
125
Normalized Tco vs Vcc
1.2
1.1
1
0.9
Normalized Tco
0.8
4.504.755.005.255.50
Supply Voltage (V)
Normalized Tco vs Temp
1.3
-25
RISE
FALL
0
25
50
75
1.2
1.1
1
0.9
Normalized Tco
0.8
0.7
-55
Temperature (deg. C)
RISE
FALL
100
125
Normalized Tsu vs Vcc
1.2
1.1
1
0.9
Normalized Tsu
0.8
4.504.755.005.255.50
PT H->L
PT L->H
Supply Voltage (V)
Normalized Tsu vs Temp
1.4
1.3
1.2
1.1
1
0.9
Normalized Tsu
0.8
0.7
-55
-25
PT H->L
PT L->H
0
25
50
75
Temperature (deg. C)
100
125
Delta Tpd vs # of Outputs
Switching
0
-0.5
-1
-1.5
Delta Tpd (ns)
-2
12345678910
Number of Outputs Switching
Delta Tpd vs Output Loading
12
10
8
6
4
2
Delta Tpd (ns)
0
-2
050100150200250300
RISE
FALL
Output Loading (pF)
RISE
FALL
Delta Tco vs # of Outputs
Switching
0
-0.5
-1
-1.5
Delta Tco (ns)
-2
12345678910
Number of Outputs Switching
Delta Tco vs Output Loading
12
10
8
6
4
2
Delta Tco (ns)
0
-2
050100150200250300
RISE
FALL
Output Loading (pF)
RISE
FALL
26
Page 27
Specifications GAL22V10
GAL22V10B-7/-10/-15/-25L: Typical AC and DC Characteristic Diagrams
Vol vs Iol
3
2.5
2
1.5
Vol (V)
1
0.5
0
0.0020.00 40.00 60.00 80.00 100.00
Iol (mA)
Normalized Icc vs Vcc
1.20
1.10
1.00
0.90
Normalized Icc
0.80
4.504.755.005.255.50
Supply Voltage (V)
Voh vs Ioh
5
4
3
2
Voh (V)
1
0
0.00 10.00 20.00 30.00 40.00 50.00 60.00
Ioh(mA)
Normalized Icc vs Temp
1.2
1.1
1
0.9
Normalized Icc
0.8
-55 -250255075 100 125
Temperature (deg. C)
Voh vs Ioh
4.5
4.25
4
Voh (V)
3.75
3.5
0.001.002.003.004.00
Ioh(mA)
Normalized Icc vs Freq.
1.20
1.10
1.00
0.90
Normalized Icc
0.80
0255075100
Frequency (MHz)
Delta Icc vs Vin (1 input)
10
8
6
4
Delta Icc (mA)
2
0
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00
Vin (V)
Input Clamp (Vik)
0
10
20
30
40
50
60
Iik (mA)
70
80
90
100
-2.00-1.50-1.00-0.500.00
Vik (V)
27
Page 28
Specifications GAL22V10
GAL22V10B-15/-25Q: Typical AC and DC Characteristic Diagrams
Normalized Tpd vs Vcc
1.2
1.1
1
0.9
Normalized Tpd
0.8
4.504.755.005.255.50
Supply Voltage (V)
Normalized Tpd vs Temp
1.3
1.2
1.1
1
0.9
Normalized Tpd
0.8
0.7
-55
-25
0
25
50
75
Temperature (deg. C)
100
125
Normalized Tco vs Vcc
1.2
1.1
1
0.9
Normalized Tco
0.8
4.504.755.005.255.50
Supply Voltage (V)
Normalized Tco vs Temp
1.3
1.2
1.1
1
0.9
Normalized Tco
0.8
0.7
-55
-25
0
25
50
75
Temperature (deg. C)
100
125
Normalized Tsu vs Vcc
1.2
1.1
1
0.9
Normalized Tsu
0.8
4.504.755.005.255.50
Supply Voltage (V)
Normalized Tsu vs Temp
1.4
1.3
1.2
1.1
1
0.9
Normalized Tsu
0.8
0.7
-55
-25
0
25
50
75
Temperature (deg. C)
100
125
Delta Tpd vs # of Outputs
Switching
0
-0.25
-0.5
-0.75
Delta Tpd (ns)
-1
12345678910
Number of Outputs Switching
Delta Tpd vs Output Loading
12
10
8
6
4
2
Delta Tpd (ns)
0
-2
050100150200250300
RISE
FALL
Output Loading (pF)
Delta Tco vs # of Outputs
Switching
0
-0.5
-1
-1.5
Delta Tco (ns)
-2
12345678910
Number of Outputs Switching
Delta Tco vs Output Loading
14
12
10
8
6
4
2
Delta Tco (ns)
0
-2
050100150200250 300
RISE
FALL
Output Loading (pF)
28
Page 29
Specifications GAL22V10
GAL22V10B-15/-25Q: Typical AC and DC Characteristic Diagrams