Page 1
INT-A-PAK
PRODUCT SUMMARY
V
CES
I
DC 265 A
C
at 200 A, 25 °C 1.74 V
V
CE(on)
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
®
antiparallel diodes with ultrasoft recovery
600 V
•HEXFRED
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, welding
• Low EMI, requires less snubbing
GA200TS60UPbF
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Peak switching current I
Peak diode forward current I
Gate to emitter voltage V
RMS isolation voltage V
Maximum power dissipation P
CES
C
CM
LM
FM
GE
ISOL
D
TC = 25 °C 265
T
= 67 °C 200
C
Any terminal to case, t = 1 min 2500
TC = 25 °C 625
= 85 °C 325
T
C
600 V
400
400
400
± 20
A
V
W
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate threshold voltage V
Temperature coeff. of threshold voltage ΔV
Forward transconductance g
Collector to emitter leakage current I
Diode forward voltage drop V
Gate to emitter leakage current I
BR(CES)
CE(on)
GE(th)
/ΔTJVCE = VGE, IC = 0.25 mA - - 11 - mV/°C
GE(th)
fe
CES
FM
GES
VGE = 0 V, IC = 1 mA 600 - -
VGE = 15 V, IC = 200 A - 1.74 2.2
= 15 V, IC = 200 A, TJ = 125 °C - 1.79 2.25
V
GE
IC = 0.25 mA 3 4.4 6
VCE = 20 V, IC = 200 A - 220 - S
VGE = 0 V, VCE = 600 V - 0.014 1
= 0 V, VCE = 600 V, TJ = 125 °C - - 10
V
GE
IC = 200 A, VGE = 0 V - 4.2 6.0
= 200 A, VGE = 0 V, TJ = 125 °C - 4.4 6.2
I
C
VGE = ± 20 V - - ± 250 nA
www.vishay.com
mA
VCollector to emitter voltage V
V
Page 2
GA200TS60UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge Q
Gate to collector charge Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching energy E
Total switching energy E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching energy E
Total switching energy E
Input capacitance C
Reverse transfer capacitance C
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode peak rate of fall of recovery during t
bdI(rec)M
g
ge
gc
d(on)
r
d(off)
f
on
off
ts
d(on)
r
d(off)
f
on
off
ts
ies
oes
res
rr
rr
rr
IC = 200 A
= 270 A
I
C
= 15 V
V
GE
IC = 200 A
= 360 V
V
CC
= ± 15 V
V
GE
T
= 25 °C
J
R
= 15 Ω
g1
= 0 Ω
R
g2
IC = 200 A
V
= 360 V
CC
= ± 15 V
V
GE
= 125 °C
T
J
R
= 15 Ω
g1
R
= 0 Ω
g2
VGE = 0 V
= 30 V
V
CC
f = 1.0 MHz
IC = 200 A
= 360 V
V
CC
dI/dt = 1300 A/μs
/dt - 1922 - A/μs
- 900 -
- 125 -
- 306 -
- 220 -
- 154 -
- 300 -
- 180 -
-2.2-
-6.6-
-8.8-
- 342 -
- 194 -
- 366 -
- 213 -
-5-
-16-
-21-
- 20 068 -
- 1254 -
- 261 -
- 179 - ns
- 120 - A
- 10 714 - μC
nCGate to emitter charge Q
ns
mJTurn-off switching energy E
ns
mJTurn-off switching energy E
pFOutput capacitance C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction temperature range T
Storage temperature range T
Junction to case
IGBT
Case to sink per module R
Mounting torque
case to heatsink - - 4
case to terminal 1, 2, 3 - - 3
R
J
Stg
thJC
thCS
Weight - 200 - g
- 40 - 150
- 40 - 125
°C
--0.2
°C/WDiode - - 0.4
-0.1-
Nm
Document Number: 94545
Page 3
GA200TS60UPbF
1000
140
120
100
80
60
Load Current (A)
40
20
0
0.1 1 10 100
VGE = 15V
500 µs pulse width
Square wave:
60 % of rated
voltage
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
I
Ideal diodes
f - Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of Fundamental)
RMS
Vishay High Power Products
For both:
Duty cycle: 50 %
T = 125 °C
J
T = 90 °C
sink
160
140
120
Gate drive as specified
Power Dissipation = W
120
100
TJ = 125 °C
- Collector-to-Emitter Current (A)
C
I
T
= 25 °C
J
10
0.5 1.0 1.5 2.0 2.5
VCE - Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
1000
VGE = 20 V
500 µs pulse width
100
TJ = 125 °C
10
- Collector-to-Emitter Current (A)
C
I
TJ = 25 °C
1
4.0 5.0 6.0 7.0 8.0 9.0
VGE - Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
80
60
- Case Temperature (°C)
40
C
T
20
0
0 50 100 150 200 250 300
Maximum DC Collector Current (A)
Fig. 4 - Case Temperature vs. Maximum Collector Current
3
2.5
2
1.5
400 A
200 A
100 A
- Collector-to-Emitter Voltage (V)
CE
V
1
20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Document Number: 94545 For technical questions, contact: [email protected]
www.vishay.com
Revision: 04-May-10 3
Page 4
GA200TS60UPbF
Vishay High Power Products
1
)
thJC
Thermal Response (Z
0.001
20
V = 400 V
CC
I = 135 A
C
16
12
8
- Gate-to-Emitter Voltage (V)
4
CE
V
0
0 200 400 600 800 1000
D = 0.50
0.1
0.20
0.10
0.01
0.05
0.02
0.01
Single pulse
(thermal response)
1E-005 0.0001 0.001 0.01 0.1 1 10
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
t1 - Rectangular Pulse Duration (s)
70
VCC = 360 V
60
TJ = 125 °C
50
VGE = 15 V
40
Rg1 = 15
Rg2 =
30
20
Total Switching Losses (mJ)
10
0
0 50 100 150 200 250 300 350 400
Ω
0 Ω
QG - Total gate Charge (nC)
Fig. 7 - Typical Gate Charge vs.
Gate to Emitter Voltage
40
Vcc = 360 V
TJ = 125 °C
35
VGE = 15 V
Ic = 200 A
30
25
Total Switching Losses (mJ)
20
0 1020304050
RG - Gate Resistance (Ω)
Fig. 8 - Typical Switching Losses vs. Gate Resistance
- Collector-to-Emitter Current (A)
C
I
IC - Collector-to-Emitter Current (A)
Fig. 9 - Typical Switching Losses vs.
Collector to Emitter Current
500
VGE = 20 V
400
Safe operating area
300
200
100
0
0 100 200 300 400 500 600 700
VCE - Collector-to-Emitter Voltage (V)
Fig. 10 - Reverse Bias SOA
www.vishay.com For technical questions, contact: [email protected]
Document Number: 94545
4 Revision: 04-May-10
Page 5
1000
GA200TS60UPbF
T = 25 °C
100
- Instantaneous Forward Current (A)
F
I
10
1.0 2.0 3.0 4.0 5. 6.0
VFM - Forward Voltage Drop (V)
J
T = 125 °C
J
Fig. 11 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
20000
15000
(ns)
10000
RR
t
5000
0
500 1000 1500 2000
Fig. 13 - Typical Reverse Recovery Time vs. dI
Vishay High Power Products
400 A, 125 °C
200 A, 125 °C
100 A, 125 °C
400 A, 25 °C
200 A, 25 °C
100 A, 2 5°C
dIF/ dt (A/µs)
/dt
F
20000
15000
400 A, 125 °C
(nC)
10000
RR
Q
5000
0
500 1000 1500 2000
200 A, 125 °C
100 A, 125 °C
400 A, 25 °C
dIF/ dt (A/µs)
Fig. 12 - Typical Stored Charge vs. dI
200 A, 25 °C
100 A, 25 °C
250
200
400 A, 125 °C
200 A, 125 °C
100 A, 125 °C
150
(A)
RRM
I
100
400 A, 25 °C
50
200 A, 25 °C
100 A, 25 °C
0
500 1000 1500 2000
dIF/ dt (A/µs)
/dt
F
Fig. 14 - Typical Reverse Recovery vs. dI
/dt
F
Document Number: 94545 For technical questions, contact: [email protected]
www.vishay.com
Revision: 04-May-10 5
Page 6
GA200TS60UPbF
T
Vishay High Power Products
Fig. 15a - Test Circuit for Measurement of ILM,
E
+Vge
Ic
td(off)
, E
on
10% Vce
off(diode)
t1
, trr, Qrr, Irr, t
90% Vge
Vce
Ic
tf
d(on)
90% Ic
t2
, tr, t
d(off)
5% Ic
Eoff =
Vce Ic dt
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
10% +Vg
Vcc
td(on)
, t
Vce ic dt
∫
t1
f
t1+5µS
Fig. 15c - Test Waveforms for Circuit of Fig. 18a,
Ic
Vpk
DIODE R EVERSE
RECOV ERY ENE RGY
10% Ic
t1
Defining E
tx
10% Vcc
Irr
Vce
GATE VO LTAGE D.U.T .
+Vg
DUT VOLT AGE
AND CURREN T
t2
, t
, t
d(on)
10% Irr
DIODE RECOVERY
WAVEFORMS
Vd Ic dt
Erec =
t4
Ipk
Eon =
r
Ic dt
Qrr =
∫
Vce Ic dt
Vce ie dt
∫
t1
∫
tx
t4
Vd id dt
t3
t2
trr
id dt
Ic
Vcc
90% Ic
5% Vce
tr
on
trr
t3
Fig. 15b - Test Waveforms for Circuit of Fig. 18a,
Defining E
, t
, t
off
d(off)
f
t0
Vg
t1
t2
Fig. 15d - Test Waveforms for Circuit of Fig. 18a,
GATE SIGN AL
DEVICE UNDER TES
CURRENT D.U.T.
VOLTA GE IN D.U.T.
CURRENT IN D1
Defining E
, trr, Qrr, I
rec
rr
Fig. 15e - Macro Waveforms for Figure 18a's Test Circuit
www.vishay.com For technical questions, contact: [email protected]
Document Number: 94545
6 Revision: 04-May-10
Page 7
GA200TS60UPbF
L
1000V
V *
c
50V
6000µF
100V
Fig. 16 - Clamped Inductive Load Test Circuit Fig. 17 - Pulsed Collector Current Test Circuit
ORDERING INFORMATION TABLE
Device code
GA 200 T S 60 U PbF
1 - Essential part number IGBT modules
2 - Current rating (200 = 200 A)
3
4 - INT-A-PAK
5 - Voltage code (60 = 600 V)
6 - Speed/type (U = Ultrafast IGBT)
7 - PbF = Lead (Pb)-free
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
D.U.T.
0 - 480V
51324
67
- Circuit configuration (T = Half bridge)
Vishay High Power Products
480V
RL=
4 X I
@25°C
C
CIRCUIT CONFIGURATION
1
S1
3
6
7
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95173
S2
4
2
5
www.vishay.com
Page 8
DIMENSIONS in millimeters (inches)
17 (0.67)
23 (0.91)
5 (0.20)
23 (0.91)
14.3
(0.56)
3 screws M6 x 10
66 (2.60)
94 (3.70)
35 (1.38)
14.5
(0.57)
1
2
3
2.8 x 0.8
(0.11 x 0.03)
5
4
7
6
37 (1.44)
80 (3.15)
Ø 6.5
(Ø 0.25)
30
(1.18)
9 (0.33)
7 (0.28)
28 (1.10)
29 (1.15)
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT
www.vishay.com
Page 9
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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