Datasheet GA200TD120U Specification

PD - 5.061B

PRELIMINARY

"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK

FeaturesFeatures

Features

FeaturesFeatures

• Generation 4 IGBT technology

GA200TD120U

Ultra-Fast

TM

Speed IGBT

V

= 1200V

CES

• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode

V

CE

(on) typ.

= 2.3V

• Very low conduction and switching losses

• HEXFRED™ antiparallel diodes with ultra- soft

@VGE = 15V, I

= 200A

C

recovery

• Industry standard package

• UL approved

Benefits

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS,
SMPS, Welding

• Lower EMI, requires less snubbing

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 200
I

CM

I

LM

I

FM

V

GE

V

ISOL

PD @ TC = 25°C Maximum Power Dissipation 1040 W
PD @ TC = 85°C Maximum Power Dissipation 540
T

J

T

STG

Collector-to-Emitter Voltage 1200 V

Pulsed Collector Current 400 A
Peak Switching Current‚ 400
Peak Diode Forward Current 400
Gate-to-Emitter Voltage ±20 V
RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500

Operating Junction Temperature Range -40 to +150 °C
Storage Temperature Range -40 to +125

Thermal / Mechanical Characteristics

Parameter Typ. Max. Units

R

θJC

R

θJC

R

θCS

Thermal Resistance, Junction-to-Case - IGBT — 0.12
Thermal Resistance, Junction-to-Case - Diode — 0.20 °C/W
Thermal Resistance, Case-to-Sink - Module 0.1 —
Mounting Torque, Case-to-Heatsink — 4.0 N m
Mounting Torque, Case-to-Terminal 1, 2 & 3 — 3.0
Weight of Module 400 — g

.

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3/20/98

GA200TD120U

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown Voltage 1200 — — VGE = 0V, IC = 1mA
Collector-to-Emitter Voltage — 2.3 2.8 VGE = 15V, IC = 200A

— 2.1 — V VGE = 15V, IC = 200A, TJ = 125°C
V
DV
g
I

CES

fe

GE(th)

GE(th)

Gate Threshold Voltage 3.0 — 6.0 IC = 2.5mA

/DTJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 2.5mA

Forward Transconductance  — 261 — S VCE = 25V, IC = 200A
Collector-to-Emitter Leaking Current — — 2.0 mA VGE = 0V, VCE = 1200V

——20 VGE = 0V, VCE = 1200V, TJ = 125°C
V

FM

Diode Forward Voltage - Maximum — 3.2 4.1 V IF = 200A, VGE = 0V

— 3.1 — IF = 200A, VGE = 0V, TJ = 125°C
I

GES

Gate-to-Emitter Leakage Current — — 500 nA VGE = ±20V

Dynamic Characteristics - TJ = 125°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Qge Gate - Emitter Charge (turn-on) — 280 420 nC IC = 249A
Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off (1)

E

ts (1)

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M/dt

Total Gate Charge (turn-on) — 1660 2490 VCC = 400V VGE = 15V

Gate - Collector Charge (turn-on) — 550 825 TJ = 25°C
Turn-On Delay Time — 636 — RG1 = 15Ω, R

G2

= 0Ω,
Rise Time — 201 — ns IC = 200A
Turn-Off Delay Time — 650 — V

CC =

720V
Fall Time — 341 — VGE = ±15V
Turn-On Switching Energy — 44 — mJ
Turn-Off Switching Energy — 44 —
Total Switching Energy — 88 130
Input Capacitance — 37343 — VGE = 0V
Output Capacitance — 1660 — pF VCC = 30V
Reverse Transfer Capacitance — 322 — ƒ = 1 MHz
Diode Reverse Recovery Time — 196 — ns IC = 200A
Diode Peak ReverseCurrent — 131 — A RG1 = 15Ω
Diode Recovery Charge — 12833 — nC RG2 = 0Ω
Diode Peak Rate of Fall of Recovery — 1740 — A/µs V
During t

b

720V

CC =

di/dt»1294A/µs

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120

)

100

80

60

Square wave:

60% of rated
v oltag e

GA200TD120U

For both:

Duty cycle: 50%
T = 125°C

J

T = 9 0 °C

sink

Gate drive as specified

Po w e r Dis s ipa tion = W

160

40

I

LOAD CURRENT (A)

20

0

0.1 1 10 100

Ideal diodes

f, Frequency (KHz

Fig. 1 - Typical Load Current vs. Frequency

1000

T = 125 C

J

100

C

I , Collector Current (A)

°

T = 25 C

(Load Current = I

°

J

of fundamental)

RMS

1000

100

10

T = 125 C

°

J

°

T = 25 C

J

V = 15V

GE

10

1.0 1.5 2.0 2.5 3.0

V , Collector-to-Emitter Voltage (V)

CE

80µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

I , Collector-to-Emitter Current (A)

1

5.0 6.0 7.0 8.0 9.0

V , Gate-to-Emitter Voltage (V)

GE

Fig. 3 - Typical Transfer Characteristics

V = 25V

CE

80µs PULSE WIDTH

C

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GA200TD120U

)

250

200

150

100

50

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1

3.0

V = 15V

GE

80 us PULSE WIDTH

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

I = A400

C

I = A200

C

I = A100

C

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

th JC

0.1

D = 0.50

0.20

0.10

0.01

T h e rm al Respo n s e ( Z )

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

0.05

0.02

0.01

SIN GLE P ULSE
(THERMAL RESPONSE)

t , R e c ta ngular Pulse Duration (sec

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J

1

DM

P

DM

t

1

t

2

1

2

thJC

C

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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A

GA200TD120U

70000

60000

50000

40000

30000

C, Capacitance (pF)

20000

10000

0

1 10 100

V

=

0V,

GE

C

=

ies ge gc , ce

C

=

res gc

C

=

oes ce gc

C

ies

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

140

V = 720V

CC

V = 15V
T = 125 C

130

I = 200A

GE
J
C

°

20

V = 400V

CC

249A

I = 200A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 400 800 1200 1600 2000

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

1000

RG1=15Ω;RG2 = 0 Ω

R = Ohm

G

V = 15V

GE

V = 720V

CC

I = A

400

120

110

100

Total Switching Losses (mJ)

90

80

0 10 20 30 40 50

R , Gate Resistance (Ohm)

G

( Ω )

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

100

Total Switching Losses (mJ)

10

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

C

I = A

200

C

I = A

100

C

°

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GA200TD120U

)

)

g

200

RG1=15Ω;RG2 = 0 Ω

R = Ohm

G

T = 150 C

J

V = 720V

CC

V = 15V

160

GE

120

80

40

Total Switching Losses (mJ)

0

0 100 200 300 400

°

I , Collector Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

( A )

F

500

V = 2 0V

GE

T = 1 25°C

J

V mea sure d at te r minal ( Peak Volta

CE

400

300

200

, Collector Current ( A)

C

100

I

0

0 200 400 600 800 1000 1200 1400

SAFE OPERATING AREA

V , C ollector-to-Emitter Voltage (V

CE

e)

Fig. 12 - Reverse Bias SOA

20000

I = 400A

F

I = 200A

F

I = 100A

16000

F

A

T = 125°C

100

J

T = 25°C

J

Instantaneous Forward Current - I

10

1.0 2.0 3.0 4.0 5.0

Forward Voltage Drop - V (V

FM

Fig. 13 - Typical Forward Voltage Drop vs.

12000

- ( nC)

RR

8000

Q

4000

V = 720V

R

T = 125°C

J

T = 25°C

0

500 1000 1500 2000

di /dt - (A /µ s )

f

J

Fig. 14 - Typical Stored Charge vs. dif/dt

Instantaneous Forward Current

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GA200TD120U

400

I = 400A

F

I = 200A

F

I = 100A

300

200

F

trr - ( ns )

100

V = 7 20V

R

T = 125°C

J

T = 2 5° C

J

0

500 1000 1500 2000

di /dt - (A /µ s )

f

Fig. 15 - Typical Reverse Recovery vs. dif/dt

250

V = 72 0V

R

T = 125°C

J

T = 25°C

J

200

I = 400A

F

I = 200A

F

I = 100A

150

F

- ( A )

RRM

I

100

50

0

500 1000 1500 2000

di /dt - (A /µ s )

f

Fig. 16 - Typical Recovery Current vs. dif/dt

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GA200TD120U

90% Vge

+Vge

Vce

Fig. 17a - Test Circuit for Measurement of

ILM, Eon, E

10% +V g

10% Ic

Vcc

td(on)

off(diode)

Vce

t1

, trr, Qrr, Irr, t

90% Ic

5% Vce

tr

, tr, t

d(on)

GATE VOLTAGE D.U.T.

+Vg

d(off)

DUT VOLTAGE
AND CURRENT

Ipk

Vce ie dt

Eon =

Vce Ic dt

∫

t1

t2

10% Vce

Ic

td(off)

, t

f

t1

90% Ic

Ic

5% Ic

tf

Eoff =

t2

Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining

E

, t

d(off)

t3

, t

f

trr

Qrr =

10% Irr

DIODE RECOVERY
W AVEFORM S

Erec =

∫

t4

off

Ic

tx

10% Vcc

Vpk

Ic

t2

DIODE REVERSE
RECOVERY ENERG Y

Irr

t1+ 5 µ S

Vce ic dt

Vce Ic dt

∫

t1

id d t

Ic dt

∫

tx

t4

Vd id dt

Vc Ic dt

t3

trr

Vcc

Fig. 17c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, t

d(on)

, t

r

Fig. 17d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

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Vg

GATE SIGNAL
DEVICE UNDER TEST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

GA200TD120U

t0

t1

t2

Figure 17e. Macro Waveforms for Figure 18a's Test Circuit

D.U.T.

50V

6000µF
100V

1000V

L

V *

c

Figure 18. Clamped Inductive Load Test Circuit

RL=

0 - 600V

Figure 19. Pulsed Collector Current

Test Circuit

600V

4 X IC @25°C

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GA200TD120U

Notes:

 Repetitive rating; V

max. junction temperature.

 See fig. 17
 For screws M5x0.8
 Pulse width 50µs; single shot.

= 20V, pulse width limited by

GE

Case Outline — DOUBLE INT-A-PAK

Dimensions are shown in millimeters (inches)

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http://www.irf.com/ Data and specifications subject to change without notice. 3/98

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