Datasheet GA200SA60UP DataSheet (Vishay)

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

FEATURES

• Ultrafast: Optimized for minimum saturation
voltage and speed up to 40 kHz in hard
switching, > 200 kHz in resonant mode

• Very low conduction and switching losses

• Fully isolate package (2500 V

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

SOT-227

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

GA200SA60UP

Vishay Semiconductors

)

AC/RMS

PRODUCT SUMMARY

V

CES

V

(typical) 1.92 V

CE(on)

V

GE

I

C

600 V

15 V

100 A

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Lower overall losses available at frequencies = 20 kHz

• Easy to assemble and parallel

• Direct mounting to heatsink

• Lower EMI, requires less snubbing

• Plug-in compatible with other SOT-227 packages

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter breakdown voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Gate to emitter voltage V

Reverse voltage avalanche energy E

RMS isolation voltage V

Maximum power dissipation P

Operating junction and storage
temperature range

Mounting torque 6-32 or M3 screw 1.3 (12)

CES

C

CM

LM

GE

ARV

ISOL

D

, T

T

J

Stg

TC = 25 °C 200

T

= 100 °C 100

C

VCC = 80 % (V
L = 10 μH, R
See fig. 13a

Repetitive rating; pulse width limited
by maximum junction temperature

Any terminal to case, t = 1 minute 2500 V

TC = 25 °C 500

T

= 100 °C 200

C

), VGE = 20 V,

CES

= 2.0 ,

G

600 V

400

400

± 20 V

160 mJ

W

- 55 to + 150 °C

N  m

(lbf in)

A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case R

Case to sink, flat, greased surface R

Weight of module 30 - g

Document Number: 94364 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

thJC

thCS

, [e-mail], [e-mail] 1

-0.25

0.05 -

°C/W

GA200SA60UP

Vishay Semiconductors

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Emitter to collector breakdown voltage V

Temperature coeff. of breakdown

V

(BR)CES

(BR)ECS

(BR)CES

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coeff. of threshold voltage V

GE(th)

Forward transconductance g

Zero gate voltage collector current I

Gate to emitter leakage current I

CE(on)

GE(th)

/TJVCE = VGE, IC = 2.0 mA - - 11 - mV/°C

fe

CES

GES

VGE = 0 V, IC = 250 μA 600 - -

VGE = 0 V, IC = 1.0 A
Pulse width  80 μs; duty factor  0.1

18 - -

/TJVGE = 0 V, IC = 10 mA - 0.38 - V/°C

IC = 100 A

V

= 15 V

I

= 200 A - 1.92 -

C

= 100 A, TJ = 150 °C - 1.54 -

I

C

GE

See fig. 2, 5

- 1.60 1.9

VCE = VGE, IC = 250 μA 3.0 - 6.0

VCE = 100 V, IC = 100 A
Pulse width 5.0 μs, single shot

79 - - S

VGE = 0 V, VCE = 600 V - - 1.0

V

= 0 V, VCE = 600 V, TJ = 150 °C - - 10

GE

VGE = ± 20 V - - ± 250 nA

V

V

mA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate-collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Internal emitter inductance L

Input capacitance C

Reverse transfer capacitance C

ge

gc

d(on)

r

d(off)

f

on

off

ts

d(on)

r

d(off)

f

ts

E

ies

oes

res

g

IC = 100 A

= 400 V

V

CC

= 15 V; See fig. 8

V

GE

TJ = 25 °C

= 100 A

I

C

V

= 480 V

CC

= 15 V

V

GE

R

= 2.0 

g

Energy losses include “tail”
See fig. 9, 10, 14

TJ = 150 °C

= 100 A, VCC = 480 V

I

C

= 15 V, Rg = 2.0 

V

GE

Energy losses include “tail”
See fig. 10, 11, 14

Measured 5 mm from package - 5.0 - nH

VGE = 0 V
V

= 30 V

CC

f = 1.0 MHz; See fig. 7

- 770 1200

- 100 150

nCGate-emitter charge (turn-on) Q

- 260 380

-54-

-79-

- 130 200

ns

- 300 450

-0.98-

-3.48-

mJTurn-off switching loss E

- 4.46 7.6

-56-

-75-

-160-

ns

-460-

-7.24- mJ

- 16 500 -

- 1000 -

pFOutput capacitance C

-200-

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94364
2 [e-mail]

, [e-mail], [e-mail] Revision: 22-Jul-10

10

1000

100

0.5 1.0 1.5 2.0 2.5 3.0 3.5

I

C

- Collector to Emitter Current (A)

VCE - Collector to Emitter Voltage (V)

TJ = 150 °C

TJ = 25 °C

VGE = 15 V
20 µs pulse width

10

1000

100

5.0 6.0 7.0 8.0

I

C

- Collector to Emitter Current (A)

VGE - Gate to Emitter Voltage (V)

TJ = 150 °C

TJ = 25 °C

VGE = 25 V
5 µs pulse width

25 50 75 100 125 150

0

50

100

150

200

TC - Case Temperature (°C)

Maximum DC Collector Current (A)

1

2

3

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

TJ - Junction Temperature (°C)

V

CE

- Collector to Emitter Voltage (V)

VGE = 15 V
80 µs pulse width

IC = 400 A

IC = 100 A

I

C

= 200 A

GA200SA60UP

200

Triangular wave:

160

120

80

Load Current (A)

Square wave:

40

0

0.1

I

Clamp voltage:
80 % of rated

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

60 % of rated
voltage

I

Ideal diodes

1 10 100

f - Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

Vishay Semiconductors

For both:

Duty cycle: 50 %

= 125 °C

T

J

= 90 °C

T

sink

Gate drive as specified
Power dissipation = 140 W

Fig. 2 - Typical Output Characteristics

Document Number: 94364 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Maximum Collector Current vs.

Case Temperature

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

, [e-mail], [e-mail] 3

GA200SA60UP

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Response

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

Single pulse

(thermal resistance)

D = 0.50

D = 0.20

D = 0.10

D = 0.05

D = 0.02

D = 0.01

0 200 400 600 800

0

4

8

12

16

20

QG - Total Gate Charge (nC)

V

GE

- Gate to Emitter Voltage (V)

VCC = 400 V
I

C

= 110 A

Total Switching Losses (mJ)

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

1

10

100

TJ - Junction Temperature (°C)

IC = 200 A

IC = 100 A

IC = 350 A

RG = 2.0 Ω
V

GE

= 15 V

V

CC

= 480 V

Vishay Semiconductors

Fig. 6 - Maximum Effektive Transient Thermal Impedance, Junction to Case

30 000

25 000

20 000

C

ies

15 000

C

10 000

C - Capacitance (pF)

5000

C

res

0

1 10 100

VCE - Collector to Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

VGE = 0 V, f = 1 MHz

= Cge + Cgc, Cce shorted

C

ies

= C

C

res

C

= Cce + C

oes

oes

Collector to Emitter Voltage

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

gc

gc

60

VCC = 480 V

= 15 V

V

GE

50

= 25 °C

T

J

= 200 A

I

C

40

30

20

10

Total Switching Losses (mJ)

0

0 102030405060

RG - Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate Resistance

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94364
4 [e-mail]

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

, [e-mail], [e-mail] Revision: 22-Jul-10

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

Total Switching Losses (mJ)

IC - Collector Current (A)

0 100 200 300 400

0

10

20

30

40

50

60

RG = 2.0 Ω
T

J

= 150 °C

V

CC

= 480 V

V

GE

= 15 V

I

C

- Collector Current (A)

10

100

1000

1 10 100 1000

VCE - Collector to Emitter Voltage (V)

Safe operating area

VGE = 20 V
T

J

= 125 °C

D.U.T.

50 V

L

V

C

*

* Driver same type as D.U.T.; V

C

= 80 % of VCE (max)

Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I

d

1000 V

121

2

480 V

4 x I

C

at 25 °C

480 µF
960 V

0 V to 480 V

RL ==

50 V

Driver*

1000 V

D.U.T.

I

C

V

C

L

* Driver same type
as D.U.T., V

C

= 480 V

3

1

2

GA200SA60UP

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 100 A

Fig. 11 - Typical Switching Losses vs. Collector Current

Vishay Semiconductors

Fig. 13a - Clamped Inductive Load Test Circuit

Fig. 13b - Pulsed Collector Current Test Circuit

Fig. 12 - Turn-Off SOA

Document Number: 94364 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

1

2

3

V

C

I

C

5 %

90 %

10 %

10 %

t

t

d(on)

r

E

on

Ets = (Eon + E

Fig. 14b - Switching Loss Waveforms

, [e-mail], [e-mail] 5

Fig. 14a - Switching Loss Test Circuit

90 %

t

d(off)

t

f

E

off

)

off

t = 5 µs

GA200SA60UP

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - Generation 4, IGBT silicon, DBC construction

3 - Current rating (200 = 200 A)

4 - Single switch, no diode

5 - SOT-227

6 - Voltage rating (60 = 600 V)

8 - None = Standard production

P = Lead (Pb)-free

7 - Speed/type (U = Ultrafast)

Device code

51324678

G A 200 S A 60 U P

3 (C)

2 (G)

1, 4 (E)

Lead assignment

E

C

G

E

3

2

4

1

n-channel

Vishay Semiconductors

Insulated Gate Bipolar Transistor

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

(Ultrafast Speed IGBT), 100 A

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95036

Packaging information www.vishay.com/doc?95037

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94364
6 [e-mail]

, [e-mail], [e-mail] Revision: 22-Jul-10

DIMENSIONS in millimeters (inches)

38.30 (1.508)

37.80 (1.488)

-A-

4

12

3

12.50 (0.492)

7.50 (0.295)

Ø 4.40 (0.173)
Ø 4.20 (0.165)

30.20 (1.189)

29.80 (1.173)

15.00 (0.590)

6.25 (0.246)

25.70 (1.012)

25.20 (0.992)

-B-

R full

Chamfer

2.00 (0.079) x 45°

2.10 (0.082)

1.90 (0.075)

8.10 (0.319)

7.70 (0.303)

4 x

2.10 (0.082)

1.90 (0.075)

-C-

0.12 (0.005)

12.30 (0.484)

11.80 (0.464)

MMM

0.25 (0.010)

CA B

4 x M4 nuts

Outline Dimensions

Vishay Semiconductors

SOT-227

Notes

• Dimensioning and tolerancing per ANSI Y14.5M-1982

• Controlling dimension: millimeter

Document Number: 95036 For technical questions, contact: [e-mail]
Revision: 28-Aug-07 1

www.vishay.com

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1