Datasheet ga100ts1 Datasheet

INT-A-PAK

GA100TS120UPbF

Vishay High Power Products

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 100 A

FEATURES

• Generation 4 IGBT technology

• Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode

• Very low conduction and switching losses

• HEXFRED® antiparallel diodes with ultrasoft recovery

• Industry standard package

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

PRODUCT SUMMARY

V

CES

DC 182 A

I

C

at 100 A, 25 °C 2.25 V

V

CE(on)

1200 V

BENEFITS

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS, SMPS, welding

• Lower EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current See fig. 17

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation P

Operating junction temperature range T

Storage temperature range T

CES

C

CM

I

LM

FM

GE

ISOL

Stg

TC = 25 °C 182

= 93 °C 100

T

C

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature

Any terminal to case, t = 1 minute 2500

D

J

TC = 25 °C 520

T

= 85 °C 270

C

1200 V

200

± 20

- 40 to + 150

- 40 to + 125

A

V

W

°C

Document Number: 94428 For technical questions, contact: [email protected] Revision: 04-May-10 1

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GA100TS120UPbF

Vishay High Power Products

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 100 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Temperature coefficient of threshold voltage ΔV

Forward transconductance g

Collector to emitter leaking current I

Maximum diode forward voltage V

Gate to emitter leakage current I

(BR)CES

CE(on)

GE(th)

fe

CES

FM

GES

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching energy E

Total switching energy E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching energy E

Total switching energy E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode peak rate of fall of recovery during t

b

Note

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature

dI

d(on)

d(off)

off

ts

d(on)

d(off)

off

ts

oes

(rec)M

g

ge

gc

r

f

on

(1)

r

f

on

(1)

ies

res

rr

VGE = 0 V, IC = 1 mA 1200 - -

VGE = 15 V, IC = 100 A - 2.25 3

V

= 15 V, IC = 100 A, TJ = 125 °C - 2 2.4

GE

IC = 1.25 mA 3.0 4.4 6.0

/ΔTJVCE = VGE, IC = 1.25 mA - - 12 - mV/°C

VCE = 25 V, IC = 100 A Pulse width 50 μs, single shot

- 136 - S

VGE = 0 V, VCE = 1200 V - 0.03 1.0

V

= 0 V, VCE = 1200 V, TJ = 125 °C - 4.2 10

GE

VGE = 0 V, IF = 100 A - 3.3 4.0

V

= 0 V, IF = 100 A, TJ = 125 °C - 3.2 3.8

GE

VGE = ± 20 V - - 250 nA

- 830 1245

VCC = 400 V I

= 124 A

C

- 140 210

- 275 412

-570-

Rg1 = 15 Ω R

= 0 Ω

g2

= 100 A

I

C

V

= 720 V

CC

= ± 15 V

V

GE

T

= 25 °C

J

-85-

-581-

-276-

-7.6-

-6.8-

- 14.4 -

-571-

Rg1 = 15 Ω R

= 0 Ω

g2

I

= 100 A

C

= 720 V

V

CC

= ± 15 V

V

GE

T

= 125 °C

J

-89-

-606-

-649-

-10-

-16-

-2645

VGE = 0 V V

= 30 V

CC

f = 1 MHz

IC = 100 A R

= 15 Ω

g1

R

= 0 Ω

g2

= 720 V

V

/dt - 1916 - A/μs

CC

dI/dt = 1300 A/μs

- 18 672 -

-830-

-161-

-149- ns

-104- A

-7664- μC

VCollector to emitter voltage V

mA

V

nCGate to emitter charge (turn-on) Q

ns

mJTurn-off switching energy E

ns

mJTurn-off switching energy E

pFOutput capacitance C

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Document Number: 94428

2 Revision: 04-May-10

GA100TS120UPbF

"Half-Bridge" IGBT INT-A-PAK

Vishay High Power Products

(Ultrafast Speed IGBT), 100 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

Thermal resistance, junction to case

Thermal resistance, case to sink per module R

Mounting torque

case to terminal 1, 2 and 3 For screws M5 x 0.8 - 3.0

case to heatsink - 4.0

IGBT

R

thJC

thCS

Weight of module 200 - g

100

Duty cycle: 50 %

= 125 °C

T

J

= 90 °C

T

75

50

Square wave:

60 % of rated

voltage

sink

Gate drive as specified Power dissipation = 170 W

-

Load Current (A)

25

Ideal diodes

-0.24

°C/WDiode - 0.35

0.1 -

Nm

0

0.1 1 10 100

1000

VGE = 15 V 500 µs pulse width

100

125 °C

25 °C

10

- Collector Current (A)

C

I

1

0.5 1.0 1.5 2.0 2.5 3.0

VCE - Collector to Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

f - Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

1000

VGE = 20 V 500 µs pulse width

100

10

- Collector to Emitter Current (A)

C

I

1

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

125 °C

25 °C

VGE - Gate to Emitter Voltage (V)

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Revision: 04-May-10 3

GA100TS120UPbF

Vishay High Power Products

160

140

120

100

80

60

40

- Case Temperature (°C)

C

T

20

0

0 40 80 120 160 200

Maximum DC Collector Current (A)

Fig. 4 - Case Temperature vs.

Maximum Collector Current

1

DC

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 100 A

3.0

VGE = 15 V 500 µs pulse width

2.5

2.0

IC = 50 A

- Collector to Emitter Voltage (V)

CE

1.5

V

0 30 60 90 120 150

TJ - Junction Temperature (°C)

Fig. 5 - Typical Collector to Emitter Voltage vs.

IC = 200 A

IC = 100 A

Junction Temperature

0.1

- Thermal Response

thJC

Z

0.01

0.0001 0.001 0.01 0.1 1

35 000

28 000

C

ies

21 000

14 000

C - Capacitance (pF)

7000

C

res

0

1 10 100

VCE - Collector to Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector to Emitter Voltage

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

VGE = 0 V, f = 1 MHz

= Cge + Cgc, Cce shorted

C

ies

= C

C

res

C

= Cce + C

oes

C

oes

Single pulse

(thermal resistance)

gc

D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

t1 - Rectangular Pulse Duration (s)

20

16

12

8

4

- Gate to Emitter Voltage (V)

GE

V

0

0 300 600 900

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

P

DM

t

1

t

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

VCC = 400 V

= 113 A

I

C

1/t2

thJC

QG - Total Gate Charge (nC)

2

.

+ T

C

10

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Document Number: 94428

4 Revision: 04-May-10

GA100TS120UPbF

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 100 A

40

35

30

25

Total Switching Losses (mJ)

20

10 20 30 40 50

RG - Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate Resistance

100

IC = 200 A

Vishay High Power Products

300

VGE = 20 V

= 125 °C

T

J

measured at terminal (peak voltage)

V

CE

200

100

- Collector Current (A)

C

I

Safe operating area

0

0 300 600 900 1200 1500

VCE - Collector to Emitter Voltage (V)

Fig. 12 - Reverse Bias SOA

1000

IC = 100 A

10

IC = 50 A

Total Switching Losses (mJ)

1

0 30 60 90 120 150

TJ - Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

60

50

40

30

20

10

Total Switching Losses (mJ)

0

0 50 100 150 200

IC - Collector Current (A)

Fig. 11 - Typical Switching Losses vs. Collector Current

100

TJ = 125 °C

TJ = 25 °C

10

1

- Instantaneous Forward Current (A)

F

I

0.5 1.0 1.5 2.0 2.5 3.0 3.5

VF - Forward Voltage Drop (V)

Fig. 13 - Typical Forward Voltage Drop vs.

Instantaneous Forward Current

16 000

12 000

(nC)

rr

Q

VR = 720 V

= 125 °C

T

J

= 25 °C

T

J

8000

4000

0

400 1200 1600

800

dIF/dt (A/µs)

Fig. 14 - Typical Stored Charge vs. dI

IF = 200 A

= 100 A

I

F

= 50 A

I

F

2000

/dt

Document Number: 94428 For technical questions, contact: [email protected]

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Revision: 04-May-10 5

GA100TS120UPbF

Vishay High Power Products

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 100 A

240

200

VR = 720 V

= 125 °C

T

J

= 25 °C

T

J

IF = 200 A

= 100 A

I

F

= 50 A

I

F

160

(ns)

rr

t

120

80

400 800 1600 2000

1200

dIF/dt (A/µs)

Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt Fig. 16 - Typical Recovery Current vs. dIF/dt

L2

L1

+

V

CC

-

+ V

- V

G2

R

G2

R

+

G2

G1

R

G2

R

G1

L3

= 60 % of BV

V

CC

LS = L1 + L2 + L3

= ± 15 V

V

GE

L

CES

250

200

IF = 200 A

= 100 A

I

F

= 50 A

I

F

150

(A)

100

RRM

I

50

0

400 800 1600 2000

VR = 720 V T T

1200

= 125 °C

J

= 25 °C

J

dIF/dt (A/µs)

Gate voltage D.U.T.

10 % + V

G

V

CE

10 % I

t

d(on)

C

t

r

V

CC

t1

90 % I

5 % V

+ V

CE

G

C

D.U.T. voltage and current

I

pk

C

t2

Eon =

VCE IC dt

∫

t1

t2

Fig. 17a - Test Circuit for Measurement of I

I

, t

, tr, t

rr

+ V

GE

I

C

10 % V

t

d(off)

d(on)

V

CE

90 % V

CE

d(off)

I

C

t

f

GE

LM

, t

f

90 % I

, Eon, E

C

5 % I

off(diode)

C

, trr, Qrr,

Fig. 17c - Test Waveforms for Circuit of Fig. 18a,

Defining E

I

C

t

x

10 % V

CC

V

pk

I

rr

, t

on

d(on)

r

t

rr

10 % I

Diode recovery waveforms

Qrr =

rr

∫

id dt

IC dt

t

x

rr

V

CC

t1 + 5 µs

Vce ic dt

E

=

VCE IC dt

off

∫

t1

t2

Fig. 17b - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

off

d(off)

f

E

Diode reverse recovery energy

t3

t4

Fig. 17d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

t4

=

VD IC dt

rec

∫

t3

rr

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Document Number: 94428

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GA100TS120UPbF

50 V

6000 µF

100 V

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 100 A

V

G

t0

Fig. 17e - Macro Waveforms for Figure 18a‘s Test Circuit

1000 V

L

V

*

C

D.U.T.

t2

t1

0 - 480 V

Vishay High Power Products

Gate signal device under test

Current D.U.T.

Voltage in D.U.T.

Current in D1

RL ==

4 x I

480 V

at 25 °C

C

* Driver same type as D.U.T.; VC = 80 % of VCE (max)

Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain rated I

Fig. 18 - Clamped Inductive Load Test Circuit Fig. 19 - Pulsed Collector Current Test Circuit

d

ORDERING INFORMATION TABLE

Device code

G A 100 T S 120 U PbF

1 - Insulated gate bipolar transistor (IGBT)

2 - Generation 4, IGBT silicon, DBC construction

3 - Current rating (100 = 100 A)

4 - Circuit configuration (T = Half-bridge)

5 - Package indicator (INT-A-PAK)

6 - Voltage rating (120 = 1200 V)

7 - Speed/type (U = Ultrafast)

8

- PbF = Lead (Pb)-free

51324678

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GA100TS120UPbF

Vishay High Power Products

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 100 A

CIRCUIT CONFIGURATION

3

6

7

1

4

5

2

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95173

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Document Number: 94428

DIMENSIONS in millimeters (inches)

17 (0.67)

23 (0.91)

5 (0.20)

23 (0.91)

14.3

(0.56)

3 screws M6 x 10

66 (2.60)

94 (3.70)

35 (1.38)

14.5 (0.57)

1

2

3

2.8 x 0.8 (0.11 x 0.03)

5

4

7

6

37 (1.44)

80 (3.15)

Ø 6.5

(Ø 0.25)

30

(1.18)

9 (0.33)

7 (0.28)

28 (1.10)

29 (1.15)

Outline Dimensions

Vishay Semiconductors

INT-A-PAK IGBT

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