
PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features
l
Cut-off wavelength: 2.1 µm
l
3-pin TO-18 package: low price
l
TE-cooled type TO-8 package: low dark current
l
Active area: f0.3 to f3 mm
■ Specifications / Absolute maximum ratings
Type No.
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
G5852-13
G5852-203
G5852-21
G5852-23
Dimensional
outline
➀
➁
➂
➃
Package Cooling
TO-18
Non-cooled
TO-5
TO-8
TO-8
One-stage
TE-cooled
Two-stage
TE-cooled
Applications
l
Gas analyzer
l
Water content analyzer
l
NIR (Near Infrared) photometry
Absolute maximum ratings
Active
area
(mm) (mW) (A) (V) (°C) (°C)
0.3
φ
0.5
φ
φ
φ
0.3
φ
φ
φ
0.3
φ
φ
φ
1
3
1
3
1
3
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
V
R
Operating
temperature
Topr
- - -40 to +85 -55 to +125
1.5
0.2
2
-40 to +70 -55 to +85
1.0
Storage
temperature
Tstg
■ Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
Measurement
condition
Element
Temperature
T
(°C) (µm) (µm) (A/W)
Spectral
response
range
λ
Peak
se n s itivity
wavelength
p
λ
Photo
sensitivity
S
p
λ=λ
Dark current
D
I
VR=1 V
Typ.
(nA)
Max.
(nA)
G8422-03 55 550 100 8 0.9 1.5 × 10
G8422-05 125 1250 80 20 0.3 2.5 × 10
G8372-01 500 5000 40 80 0.1 4 × 10
G8372-03
G5852-103 5.5 55 100 8 9 5 × 10
G5852-11 50 500 40 80 1 1 × 10
G5852-13
25 0.9 to 2.1
-10 0.9 to 2.07
5 (µA) 50 (µA) 3 800 0.01
1.95 1.2
500 5000 3 800 0.1
G5852-203 3 30 100 8 18 3 × 10
G5852-21 25 250 40 80 2 8 × 10
G5852-23
-20 0.9 to 2.05
250 2500 3 800 0.2
Cut-off
frequency
Terminal
capacitance
fc
VR=1 V
L
=50
R
Ω
VR=1 V
f=1 MHz
(MHz) (pF)
Ct
Shunt
resistance
Rsh
VR=10 mV
(MΩ)
∗
D
λ=λ
1/2
(cm ·H z
2.5 × 10
8 × 10
1.2 × 10
p
/W )
11
NEP
λ=λ
(W/Hz
11
1.5 × 10
4 × 10
12
3 × 10
p
1/2
)
-13
-13
-13
-12
-14
-13
-13
-14
-14
-13
1

InGaAs PIN photodiode
10.8 1.6 2 2.2 2.6
WAVELENGTH (µm)
TEMPERATURE COEFFICIENT (%/˚C)
-1
(Typ.)
1.2 1.4 1.8 2.4
0
1
2
1 MΩ
-40 -20 0 20 40 60 80 90 100
ELEMENT TEMPERATURE (˚C)
100 kΩ
10 kΩ
100 Ω
1 kΩ
10 MΩ
(Typ. V
R=10 mV)
G8422-03
G5852-103/-203
G8422-05
G8372-01
G5852-11/-21
G8372-03
G5852-13/-23
SHUNT RESISTANCE
G8422/G8372/G5852 series
■
Spectral response
1.4
1.2
1.0
0.8
0.6
PHOTO SENSITIVITY (A/W)
0.4
0.2
0
T= -20 ˚C
T= -10 ˚C
1.41.21.00.8
1.6 1.8 2.22.0 2.4
WAVELENGTH (µm)
■
Dark current vs. reverse voltage
Non-cooled type TE-cooled type
100 µA
T=25 ˚C
(Typ. Ta=25
(Typ.)
˚C
KIRDB0226EA
)
■
Photo sensitivity temperature characteristic
1 µA
(Typ.)
KIRDB0207EA
10 µA
1 µA
DARK CURRENT
100 nA
10 pA
0.01 0.1 1 10
REVERSE VOLTAGE (V)
■
Terminal capacitance vs. reverse voltage
10 nF
1 nF
100 pF
10 pF
TERMINAL CAPACITANCE
1 pF
0.01 0.1 1 10
REVERSE VOLTAGE (V)
2
G8372-03
G8372-01
G8422-05
G8422-03
(Typ. Ta=25 ˚C, f=1 MHz)
G8372-03
G5852-13/-23
G8372-01
G5852-11/-21
G8422-03
G5852-103/-203
G8422-05
100 nA
10 nA
DARK CURRENT
1 nA
100 pA
0.01 0.1 1 10
G5852-13 (T= -10
G5852-23 (T= -20
G5852-21 (T= -20
G5852-11 (T= -10
G5852-103 (T= -10
G5852-203 (T= -20
˚C
)
˚C
)
˚C
˚C
)
˚C
)
˚C
)
)
REVERSE VOLTAGE (V)
KIRDB0235EA KIRDB0228EA
■
Shunt resistance vs. element temperature
KIRDB0236EA
KIRDB0237EA

InGaAs PIN photodiode
G8422/G8372/G5852 series
■
Thermistor temperature characteristic
6
10
5
10
4
10
RESISTANCE (Ω)
3
10
-40 -20 0 20
(Typ.)
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
■
Current vs. voltage characteristics of TE-cooler
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
1.6
1.4
1.2
1.0
ONE-STAGE
TE-COOLED TYPE
■
Cooling characteristics of TE-cooler
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
40
20
ONE-STAGE
TE-COOLED TYPE
0
-20
TWO-STAGE
-40
ELEMENT TEMPERATURE (˚C)
TE-COOLED TYPE
-60
0 0.4 0.8 1.2 1.6
CURRENT (A)
KIRDB0231EA
0.8
0.6
CURRENT (A)
0.4
0.2
0
0 0.5 1.0 1.5
TWO-STAGE
TE-COOLED TYPE
VOLTAGE (V)
KIRDB0115EA
3

WINDOW
5.9 ± 0.1
2.5 ± 0.2
0.15 MAX.
0.4 MAX.
8.1 ± 0.1
9.2 ± 0.2
4.2 ± 0.2
18 MIN.
0.45
LEAD
CASE
5.1 ± 0.3
1.5 MAX.
PHOTOSENSITIVE
SURFACE
■
Dimensional outline (unit: mm)
InGaAs PIN photodiode
G8422/G8372/G5852 series
➀ G8422-03/-05, G8372-01 ➁ G8372-03
5.4 ± 0.2
4.7 ± 0.1
WINDOW
3.0 ± 0.1
3.6 ± 0.213 MIN.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.5 ± 0.2
15.3 ± 0.2
14 ± 0.2
WINDOW
10 ± 0.2
CASE
6.4 ± 0.212 MIN.
2.7 ± 0.2
KIRDA0150EA KIRDA0151EA
➃ G5852-203/-21/-23➂ G5852-103/-11/-13
15.3 ± 0.2
14 ± 0.2
WINDOW
10 ± 0.2
10 ± 0.212 MIN.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.1 ± 0.2
5.1 ± 0.2
10.2 ± 0.2
PHOTOSENSITIVE
4.4 ± 0.2
DETECTOR ELEMENT (ANODE)
DETECTOR ELEMENT (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
KIRDA0029EB
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
SURFACE
0.45
LEAD
5.1 ± 0.2
5.1 ± 0.2
6.7 ± 0.2
10.2 ± 0.2
DETECTOR ELEMENT (ANODE)
DETECTOR ELEMENT (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
KIRDA0031EB
Cat. No. KIRD1047E02
Sep. 2001 DN