Datasheet G7189, G5645, G6262, G5842 Datasheet (HAMAMATSU)

PHOTODIODE

GaAsP photodiode

Diffusion type

Short-wavelength type photodiode

Features

l

Low dark current

l

Narrow spectral response range

General ratings / Absolute maximum ratings

■

Dimensional

Type No.

G5645
G5842
G6262
G7189

outline/

Window

material *

/K TO-18

➀

➁
➁

/R Plastic

➂

Package

Plastic
Plastic

Applications

l

Analytical instruments

l

UV detection

Active area

size

(mm) (mm

0.8 × 0.8 0.58 5 -30 to +80 -40 to +85

Effective

active

area

2

) (V) (°C) (°C)

Reverse

V

Absolute maximum ratings

Operating

voltage

Max.

R

temperature

Topr

Storage

temperature

Tstg

Electrical and optical characteristics (Typ. Ta=25

■

Spectral

response

Type No.

G5645
G5842
G6262
G7189

* Window material K: borosilicate glass, R: resin coating

range

(nm) (nm)

300 to 580
260 to 400
280 to 580
300 to 580

sensitivity

wavelength

λ

Photo sensitivity

Peak

p

λ

470 0.28 0.05 60 90 2.3 × 10
370 0.06 - - 2 7.6 × 10
470 0.2 0.05 45 65 2.3 × 10
470 0.25 0.02 45 65

λ

(A/W)

p

S

GaP
LED

560 nm

°C

, unless otherwise noted)

lx

Dark

current

I

D

VR=5 V

Max.

50 1.07 3 80 10 80

Short circuit

current

Isc

1000

Min.

Typ.

(nA)

(nA) (pA)

Temp.

coefficient

of

I

D

T

CID

(times/°C)

Rise time

tf

=0 V

V

R

=1 k

R

Ω

L

(µs) (pF)

Terminal

capacitance

Ct

VR=0 V

f=10 kHz

Shunt

resistance

Rsh

=10 mV

V

R

Min.

Typ.

(GΩ)

(GΩ)(W/Hz

NEP

2.3 × 10

1/2

)

-15

-15

-15

-15

■■

■Spectral response

■■

0.5

(Typ. Ta=25 ˚C)

GaAsP photodiode

0.1

Diffusion type

(Typ. Ta=25 ˚C)

0.4

G5645

0.3

0.2

0.1

PHOTO SENSITIVITY (A/W)

0

200 400 600

G7189

G6262

800

WAVELENGTH (nm)

KGPDB0029EA KGPDB0001EC

■■

■Photo sensitivity temperature characteristic

■■

+3.0

+2.5

+2.0

+1.5

+1.0

+0.5

0

(Typ.)

TEMPERATURE COEFFICIENT (%/˚C)

-0.5
400200

600 800

0.08

G5842

0.06

0.04

0.02

PHOTO SENSITIVITY (A/W)

0

200 300 400

WAVELENGTH (nm)

■■

■Rise time vs. load resistance

■■

10 ms

1 ms

100 µs

10 µs

RISE TIME

1 µs

100 ns

10

2

3

10

(Typ. Ta=25 ˚C, VR=0 V)

4

10

500

5

10

6

10

WAVELENGTH (nm)

■■

■Dark current vs. reverse voltage

■■

100

pA

10

pA

1

pA

DARK CURRENT

100

fA

0.01 0.10.001

(Typ. Ta=25 ˚C, VR=0 V)

REVERSE VOLTAGE (V)

KGPDB0030EA

110

KGPDB0032EA

LOAD RESISTANCE (Ω)

KGPDB0031EA

■■

■Shunt resistance vs. ambient temperature

■■

10 TΩ

1 TΩ

100 GΩ

10 GΩ

1 GΩ

(Typ. VR=10 mV)

SHUNT RESISTANCE

100 MΩ

10 MΩ

020-20

40 60 80

AMBIENT TEMPERATURE (˚C)

KGPDB0033EA

■■

■Short circuit current linearity

■■

(Typ. Ta=25 ˚C, A light source fully illuminated)

0

10

-2

10

-4

10

-6

10

-8

10

-10

10

-12

10

OUTPUT CURRENT (A)

-14

10

-16

10

-16

10

Refer to NEP value in characteristic table.

-1410-1210-1010-810-610-410-2

10

INCIDENT LIGHT LEVEL (lx)

■■

■Dimensional outlines (unit: mm)

■■

RL=100 Ω

0

10

KGPDB0008EA

GaAsP photodiode

Diffusion type

➀ G5645

WINDOW

3.0 ± 0.2

0.45
LEAD

CONNECTED
TO CASE

5.4 ± 0.2

4.7 ± 0.1

3.55 ± 0.2

2.4

14

2.54 ± 0.2

Borosilicate glass window may extend
a maximum of 0.1 mm beyond the upper
surface of the cap.

KGPDA0012EA

➁ G5842, G6262

1.25 ±

PHOTOSENSITIVE
SURFACE

(3.4)

ACTIVE AREA

(3 ×) 0.5

2.54

0.25 1.25 ± 0.25

6.5 ±

4.0

0.2

4.0

3.2

(FILTER)

0.2

0.1

-

+

0.1

0.65

4.0

0.850.2

1.5

4.0

3.2

N/C

CATHODE
ANODE

(FILTER)

KGPDA0004EA

4.0

➂ G7189

4.6 ± 0.2

(INCLUDING BURR)

0.7

0.5

GaAsP photodiode

Diffusion type

4.5 ± 0.4

5.75 ± 0.2

3˚

7.5 ± 5˚

4.5

5.4

5.6 ± 0.2

10˚

(INCLUDING BURR)

0.6

3˚

2.54

5.5

1.0

PHOTOSENSITIVE
SURFACE

2.0

5˚

ANODE
CATHODE
NC
CATHODE

0.25

KGPDA0003EA

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Her tfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.

Cat. No. KGPD1004E01
Apr. 2001 DN