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PHOTODIODE
InGaAs PIN photodiode
G8423/G8373/G5853 series
Long wavelength type (up to 2.6 µm)
Features
l
Long cut-off wavelength: 2.6 µm
l
3-pin TO-18 package: low price
l
Thermoelectrically cooled TO-8 package: low dark current
l
Active area: φ0.3 to φ3 mm
Specifications / Absolute maximum ratings
■
Type No.
G8423-03
G8423-05
G8373-01
G8373-03
G5853-103
G5853-11
G5853-13
G5853-203
G5853-21
G5853-23
Dimensional
outline
➀
➁
➂
➃
Package Cooling
TO-18
Non-cooled
TO-5
TO-8
TO-8
One-stage
TE-cooled
Two-stage
TE-cooled
Applications
l
Gas analysis
l
Spectrophotometer
l
NIR (near infrared) photometry
Absolute maximum ratings
Active
area
(mm) (mW) (A) (V) (°C) (°C)
0.3
φ
0.5
φ
φ
φ
0.3
φ
φ
φ
0.3
φ
φ
φ
1
3
1
3
1
3
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
V
R
Operating
temperature
Topr
- - -40 to +85 -55 to +125
1.5
0.2
2
-40 to +70 -55 to +85
1.0
Storage
temperature
Tstg
Electrical and optical characteristics (Typ. unless otherwise noted)
■
Type No.
Measurement
condition
Element
temperature
Spectral
response
range
λ
Peak
se n s itiv ity
wavelength
p
λ
(°C) (µm) (µm) (A/W)
Photo
sensitivity
S
p
λ=λ
Dark current
I
D
VR=1 V
Typ.
(µA)
Max.
(µA)
Cut-off
frequency
Terminal
capacitance
fc
=1 V
V
R
=50
R
L
f=1 MHz
Ω
V
-3 dB
(MHz) (pF)
Ct
=1 V
R
Shunt
resistance
Rsh
VR=10 mV
(kΩ)
D
λ=λ
(cm ·H z
∗
1/2
p
/W )
NEP
λ=λ
(W/Hz
G8423-03 2 20 60 40 30 7 × 10
G8423-05 5 50 50 60 15 1 × 10
G8373-01 15 75 15 200 3 2 × 10
G8373-03
G5853-103 0.2 2 60 40 300 3 × 10
G5853-11 1.5 7.5 15 200 30 7 × 10
G5853-13
25 1.2 to 2.6
-10 1.2 to 2.57
150 1500 1.5 1800 0.3
2.3 1.1
15 150 1.5 1800 3
5 × 10
1 × 10
10
8 × 10
11
2 × 10
G5853-203 0.1 1 60 40 600 2 × 10
11
G5853-21 0.8 4 15 200 60 5 × 10
G5853-23
-20 1.2 to 2.55
7.5 75 1.5 1800 6
2 × 10
1.8 × 10
p
1/2
)
-13
-12
-12
-12
-13
-13
-12
-13
-13
-12
1
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InGaAs PIN photodiode
100 kΩ
-40 -20 0 20 40 60 80 90 100
ELEMENT TEMPERATURE (˚C)
SHUNT RESISTANCE
10 kΩ
1 kΩ
10 Ω
100 Ω
1 MΩ
(Typ. V
R
=10 mV)
G8423-03
G5853-103/-203
G8423-05
G8373-01
G5853-11/-21
G8373-03
G5853-13/-23
G8423/G8373/G5853 series
■
Spectral response
1.4
1.2
1.0
0.8
0.6
0.4
PHOTO SENSITIVITY (A/W)
0.2
0
1.6 1.8 2.0 2.4 2.62.2 2.8
1.41.21.00.8
WAVELENGTH (µm)
■
Dark current vs. reverse voltage
Non-cooled type TE-cooled type
1 mA
G8373-03
T= -20 ˚C
T= -10 ˚C
T=25 ˚C
(Typ. Ta=25
(Typ.)
˚C
KIRDB0216EA
)
■
Photo sensitivity temperature characteristic
2
1
0
(Typ.)
TEMPERATURE COEFFICIENT (%/˚C)
-1
10.8 1.6 2 2.2 2.6
1.2 1.4 1.8 2.4
WAVELENGTH (µm)
100 µA
G5853-13 (T= -10
˚C
)
(Typ.)
KIRDB0206EA
100 µA
10 µA
DARK CURRENT
1 µA
100 nA
0.01 0.1 1 10
REVERSE VOLTAGE (V)
■
Terminal capacitance vs. re verse voltage
10 nF
2
1 nF
100 pF
TERMINAL CAPACITANCE
10 pF
0.1 1 10
REVERSE VOLTAGE (V)
G8373-01
G8423-05
G8423-03
(Typ. Ta=25 ˚C, f=1 MHz)
G8373-03
G5853-13/-23
G8373-01
G5853-11/-21
G8423-05
G8423-03
G5853-103/-203
10 µA
G5853-23 (T= -20
1 µA
DARK CURRENT
100 nA
10 nA
0.01 0.1 1 10
G5853-21 (T= -20 ˚C)
G5853-103 (T= -10 ˚C)
G5853-203 (T= -20 ˚C)
˚C
)
G5853-11 (T= -10 ˚C)
REVERSE VOLTAGE (V)
KIRDB0238EA KIRDB0218EA
■
Shunt resistance vs. element temperature
KIRDB0239EA
KIRDB0240EA
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InGaAs PIN photodiode
G8423/G8373/G5853 series
■
Thermistor temperature characteristic
6
10
5
10
4
10
RESISTANCE (Ω)
3
10
-40 -20 0 20
(Typ.)
ELEMENT TEMPERATURE (˚C)
KIRDB0116EA
■
Current vs. voltage characteristics of TE-cooler
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
1.6
1.4
1.2
ONE-STAGE
TE-COOLED TYPE
1.0
■
Cooling characteristics of TE-cooler
(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)
40
20
ONE-STAGE
TE-COOLED TYPE
0
-20
TWO-STAGE
TE-COOLED TYPE
-40
ELEMENT TEMPERATURE (˚C)
-60
0 0.4 0.8 1.2 1.6
CURRENT (A)
KIRDB0231EA
0.8
0.6
CURRENT (A)
0.4
0.2
0
0 0.5 1.0 1.5
TWO-STAGE
TE-COOLED TYPE
VOLTAGE (V)
KIRDB0115EA
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■
Dimensional outlines (unit: mm)
InGaAs PIN photodiode
G8423/G8373/G5853 series
➀ G8423-03/-05, G8373-01 ➁ G8373-03
5.4 ± 0.2
4.7 ± 0.1
WINDOW
3.0 ± 0.1
2.7 ± 0.2
3.6 ± 0.213 MIN.
0.15 MAX.
9.2 ± 0.2
8.1 ± 0.1
WINDOW
5.9 ± 0.1
2.5 ± 0.2
4.2 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
2.5 ± 0.2
CASE
KIRDA0150EA KIRDA0151EA
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.1 ± 0.3
1.5 MAX.
➂ G5853-103/-11/-13 ➃ G5853-203/-21/-23
15.3 ± 0.2
14 ± 0.2
WINDOW
10 ± 0.2
4.4 ± 0.2
6.4 ± 0.212 MIN.
15.3 ± 0.2
14 ± 0.2
WINDOW
10 ± 0.2
CASE
6.7 ± 0.2
10 ± 0.212 MIN.
18 MIN.
0.4 MAX.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
PHOTOSENSITIVE
SURFACE
0.45
LEAD
5.1 ± 0.2
5.1 ± 0.2
10.2 ± 0.2
DETECTOR (ANODE)
DETECTOR (CATHODE)
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
4
KIRDA0031EBKIRDA0029EB
Cat. No. KIRD1048E01
Apr. 2001 DN
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