Page 1
PHOTODIODE
(
)
GaAsP photodiode
Diffusion type
Photodiode for visible light detection
Features
l
Low dark current
l
High stability
■
General ratings / Absolute maximum ratings
Dimensional
Type No.
G1115
G1116
G1117
G1118
G1120
G3067
G2711-01
■
Electrical and optical characteristics (Typ. Ta=25
Type No.
G1115 0.12 0.15 1 10
G1116 0.45 0.6 2.5 25
G1117 22.5 5 50
G1118 0.12 0.15 1 10
G1120 22.5 5 50
G3067 0.75 0.95 1 10
G2711-01
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
outline/
Window
material *
/K TO-18 1.3 × 1.3 1.66
➀
/K TO-5 2.7 × 2.7 7.26
➁
/K TO-8 5.6 × 5.6 29.3
➂
/R Ceramic 1.3 × 1.3 1.66
➃
/R Ceramic 5.6 × 5.6 29.3
➄
/L TO-18 1.3 × 1.3 1.66
➅
/R Plastic 1.3 × 1.3 1.66
➆
Spectral
response
range
(nm) (nm)
300 to 680
sensitivity
wavelength
λ
Package
Peak
λ
640 0.3 0.29 0.29
Photo sensitivity
p
p
λ
S
(A/W)
GaP
LED
560 nm
Active area
size
(mm) (mm
°C
Short circuit
current
He-Ne
laser
633 nm
100
Min.
(µA)
0.15 0.18 1 10
Applications
l
Analytical instrument
l
Color identification
Effective
active
area
2
) (V) (°C) (°C)
, unless otherwise noted)
Dark
current
Max.
V4=10 mV
(pA)
D
I
V4=1 V
(pA)
Isc
lx
Typ.
(µA)
Reverse
voltage
R
Max.
V
5 -30 to +80 -40 to +85
Temp.
coefficient
of
D
I
CID
T
times/°C
1.07
Absolute maximum ratings
Operating
temperature
Topr
Rise time
VR=0 V
L
R
Terminal
capacitance
tr
=1 k
(µs) (pF)
1 300 10 80
4 1400 4 30
15 6000 2 15
1 300 10 80
15 6000 2 15
1 300 10 80
1 300 10 80
VR=0 V
Ω
f=10 kHz
Ct
Shunt
resistance
Rsh
R
=10 mV
V
Min.
(GΩ)
Storage
temperature
Tstg
NEP
Typ.
(GΩ)(W/Hz
1.5 × 10
2.5 × 10
3.5 × 10
1.5 × 10
3.5 × 10
1.5 × 10
1.5 × 10
1/2
)
-15
-15
-15
-15
-15
-15
-15
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GaAsP photodiode
Diffusion type
■■
■Spectral response
■■
0.5
0.4
0.3
0.2
0.1
PHOTO SENSITIVITY (A/W)
0
200 400 600
WAVELENGTH (nm)
■■
■Rise time vs. load resistance
■■
10
ms
1
ms
G1117, G1120
(Typ. Ta=25 ˚C, VR=0 V)
G1116
(Typ. Ta=25 ˚C)
800
KGPDB0019EA
■■
■Photo sensitivity temperature characteristic
■■
+1.5
+1.0
+0.5
0
(Typ.)
TEMPERATURE COEFFICIENT (%/˚C)
-0.5
400200
600 800
WAVELENGTH (nm)
KGPDB0020EA
■■
■Dark current vs. reverse voltage
■■
1 nA
100 pA
(Typ. Ta=25 ˚C)
100
µs
10
µs
RISE TIME
1
µs
100
ns
10
2
3
10
G1115, G1118
G3067, G2711-01
4
10
5
10
6
10
LOAD RESISTANCE (Ω)
KGPDB0021EA
■■
■Shunt resistance vs. ambient temperature
■■
10 TΩ
1 TΩ
100 GΩ
10 GΩ
1 GΩ
SHUNT RESISTANCE
100 MΩ
10 MΩ
020-20
G1115, G1118
G3067, G2711-01
(Typ. VR=10 mV)
G1116
G1117, G1120
40 60 80
G1117, G1120
10 pA
G1116
DARK CURRENT
1 pA
100
fA
0.01 0.10.001
REVERSE VOLTAGE (V)
■■
■Short circuit current linearity
■■
(Typ. Ta=25 ˚C, A light source fully illuminated)
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
-12
10
OUTPUT CURRENT (A)
-14
10
-16
10
-16
10
Refer to NEP value in characteristic table.
-1410-1210-1010-810-610-410-2
10
G1115, G1118
G2711-01, G3067
110
RL=100 Ω
10
KGPDB0022EA
0
AMBIENT TEMPERATURE (˚C)
KGPDB0023EA
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA
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■■
■Dimensional outlines (unit: mm)
■■
GaAsP photodiode
Diffusion type
➀ G1115
WINDOW
3.0 ± 0.2
PHOTOSENSITIVE
SURFACE
0.45
LEAD
CONNECTED
TO CASE
5.4 ± 0.2
4.7 ± 0.1
3.55 ± 0.2
2.4
14
2.54 ± 0.2
Borosilicate glass window may extend a
maximum of 0.1 mm beyond the upper
surface of the cap.
KGPDA0012EA
➁ G1116
WINDOW
5.9 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
CONNECTED
TO CASE
9.1 ± 0.2
8.1 ± 0.1
5.08 ± 0.2
4.1 ± 0.2
2.9
20
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
KGPDA0013EA
➂ G1117
WINDOW
10.5 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
CONNECTED
TO CASE
13.9 ± 0.2
12.35 ± 0.1
7.5 ± 0.2
5.0 ± 0.2
1.9
15
MARK ( 1.4)
Borosilicate glass window may extend a
maximum of 0.2 mm beyond the upper
surface of the cap.
➃ G1118
PHOTOSENSITIVE
SURFACE
CATHODE
TERMINAL MARK
ACTIVE AREA
0.6
0.45
LEAD
6.0 ± 0.2
5.0 ± 0.2
1.5 ± 0.2
14
3.0 ± 0.2
KGPDA0014EA
KGPDA0002EA
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GaAsP photodiode
Diffusion type
➄ G1120
ACTIVE AREA
PHOTOSENSITIVE
SURFACE
0.3
0.5
LEAD
ANODE
TERMINAL MARK
0.65
10.1 ± 0.1
9.2 ± 0.3
7.4 ± 0.2
8.9 ± 0.1
2.0 ± 0.1
10.5
8.0 ± 0.3
Coating resin may extend a maximum
of 0.1 mm beyond the upper surface
of the package.
KGPDA0008EA
➅ G3067
2.4
0.45
LEAD
CONNECTED
TO CASE
5.4 ± 0.2
4.65 ± 0.1
2.15 ± 0.3
4.5 ± 0.2
14
2.54 ± 0.2
KGPDA0009EA
➆ G2711-01
4.6 ± 0.2
(INCLUDING BURR)
5.4
10˚
(INCLUDING BURR)
0.6
1.0
2.0
ANODE
CATHODE
NC
CATHODE
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
4.5 ± 0.4
5.75 ± 0.2
3˚
7.5 ± 5˚
5.6 ± 0.2
4.5
PHOTOSENSITIVE
5˚
SURFACE
0.25
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
0.7
0.5
3˚
2.54
KGPDA0003EA
5.5
Cat. No. KGPD1002E01
Apr. 2001 DN
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