Page 1
PHOTODIODE
g
g
GaP photodiode
G1961, G1962, G1963
Schottky type
Features
l
Low dark current
l
High UV sensitivity
■
General ratings / Absolute maximum ratings
Dimensional
Type No.
G1961 ➀/Q * TO-18 1.1 × 1.1 1.0
G1962 ➁/Q TO-5 2.3 × 2.3 5.2
G1963 ➂/Q TO-8 4.6 × 4.6 21
outline/
Window
material
Package
Active area
size
(mm) (mm
Applications
l
Analytical instruments
l
UV detection
Effective
active
area
Absolute maximum ratings
Reverse
voltage
R
Max.
2
) (V) (°C) (°C)
V
5 -10 to +60 -20 to +70
Operating
temperature
Topr
Storage
temperature
Tstg
■
Electrical and optical characteristics (Typ. Ta=25
th
p
λ
Photo sensitivity
S
(A/W)
Hg
line
p
λ
400 nm
254 nm
Spectral
response
Type No.
G1961 0.04 0.05 2.5 25 5 400 4 40 5.4 × 10
G1962 0.23 0.3 5 50 10 1500 2 20 7.6 × 10
G1963
* Window material Q: quartz glass
ran
(nm) (nm)
190 to 550
Peak
sensitivity
e
wavelen
λ
440 0.12 0.03 0.1
°C
, unless otherwise noted)
4
V
(pA)
=10 mV
Dark
current
D
I
Max.
V4=1 V
(pA)
Short circuit
current
Isc
lx
Min.
Typ.
(µA)
(µA)
0.75 0.9 10 100
Temp.
coefficient
of
D
I
CID
T
(times/°C)
1.11
Rise time
R
V
L
R
Terminal
capacitance
tr
=0 V
=1 k
(µs) (pF)
30 5000 1 1 1.1 × 10
VR=0 V
Ω
f=10 kHz
Ct
Shunt
resistance
Rsh
VR=10 mV
Min.
Typ.
(GΩ)
(GΩ)
NEP
(W/Hz
1/2
)
-15
-15
-14
Page 2
GaP photodiode
G1961, G1962, G1963
■■
■
■■
Spectral response
0.2
0.15
0.1
0.05
PHOTO SENSITIVITY (A/W)
0
190 400 600
WAVELENGTH (nm)
■■
■
■■
Rise time vs. load resistance
(Typ. Ta=25 ˚C)
800
KGPDB0014EA
■■
■
■■
Photo sensitivity temperature characteristic
+1.5
+1.0
+0.5
0
TEMPERATURE COEFFICIENT (%/˚C)
-0.5
190 400 600
WAVELENGTH (nm)
■■
■
■■
Dark current vs. reverse voltage
(Typ.)
800
KGPDB0017EB
10
ms
1
ms
100
µs
10
µs
RISE TIME
1
µs
100
ns
2
10
(Typ. Ta=25 ˚C, VR=0 V)
G1963
G1962
G1961
10
3
10
4
LOAD RESISTANCE (Ω)
10
1 nA
100 pA
10 pA
G1963
G1962
(Typ. Ta=25 ˚C)
DARK CURRENT
1 pA
100
5
10
6
fA
0.01 0.10.001
G1961
110
REVERSE VOLTAGE (V)
KGPDB0015EA
KGPDB0016EA
Page 3
GaP photodiode
G1961, G1962, G1963
■■
■
■■
Shunt resistance vs. ambient temperature
10 TΩ
1 TΩ
100 GΩ
10 GΩ
G1963
1 GΩ
(Typ. VR=10 mV)
G1961
G1962
SHUNT RESISTANCE
100 MΩ
10 MΩ
0 +20-20
+40 +60 +80
AMBIENT TEMPERATURE (˚C)
■■
■
■■
Dimensional outlines (unit: mm)
KGPDB0018EA
■■
■
■■
Short circuit current linearity
(Typ. Ta=25 ˚C, A light source fully illuminated)
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
-12
10
OUTPUT CURRENT (A)
-14
10
DEPENDENT ON NEP
-1410-1210-1010-810-610-410-2
10
10
-16
-16
10
INCIDENT LIGHT LEVEL (lx)
RL=100 Ω
0
10
KGPDB0008EA
➀ G1961
PHOTOSENSITIVE
SURFACE
WINDOW
3.0 ± 0.2
0.45
LEAD
CONNECTED
TO CASE
5.4 ± 0.2
4.7 ± 0.1
2.4
2.54 ± 0.2
3.55 ± 0.2
14
KGPDA0005EA
➁ G1962
PHOTOSENSITIVE
SURFACE
WINDOW
5.9 ± 0.1
0.45
LEAD
CONNECTED
TO CASE
9.1 ± 0.2
8.1 ± 0.1
4.1 ± 0.2
2.9
20
5.08 ± 0.2
KGPDA0006EA
Page 4
➂ G1963
GaP photodiode
G1961, G1962, G1963
WINDOW
10.5 ± 0.1
PHOTOSENSITIVE
SURFACE
0.45
LEAD
CONNECTED
TO CASE
13.9 ± 0.2
12.35 ± 0.1
7.5 ± 0.2
5.0 ± 0.2
1.9
15
INDEX MARK ( 1.4)
KGPDA0007EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KGPD1007E01
Apr. 2001 DN
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