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SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
ISSUE 4 - NOVEMBER 2001 ✪
FEATURES
* Up to 5 Amps continuous collector current, up to 10 Amp peak
* Very low saturation voltage
* Excellent h
PARTMARKING DETAIL - FZT855
COMPLEMENTARY TYPE - FZT955
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
specified up to 10 Amps
FE
=25°C P
amb
CBO
CEO
EBO
CM
C
tot
j:Tstg
FZT855
C
C
B
250 V
150 V
6V
10 A
5A
3W
-55 to +150 °C
E
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FZT855
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
CBO
CER
R 1k
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
on
t
off
250 375 V
250 375 V
150 180 V IC=10mA*
68 V
501nA
A
501nA
A
10 nA VEB=6V
20
40
65
110
355
mV
mV
mV
mV
35
60
260
1250 mV IC=5A, IB=500mA*
1.1 V IC=5A, VCE=5V*
100
200
100
200
15
300
30
10
90 MHz IC==100mA, VCE=10V
22 pF VCB=10V, f=1MHz
66
nsnsIC=1A, IB1=100mA
2130
s. Duty cycle 2%
=100A
I
C
=1A, RB1k
I
C
=100A
I
E
V
=200V
CB
V
=200V,
CB
T
=100°C
amb
V
=200V
CB
V
=200V,
CB
T
=100°C
amb
IC=100mA, IB=5mA*
I
=500mA, IB=50mA*
C
I
=1A, IB=100mA*
C
I
=5A, IB=500mA*
C
IC=10mA, VCE=5V
I
=1A, VCE=5V*
C
I
=5A, VCE=5V*
C
=10A, VCE=5V*
I
C
f=50MHz
I
=100mA, VCC=50V
B2
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TYPICAL CHARACTERISTICS
FZT855
0.8
)
s
t
0.6
l
o
V
(
-
)
t
0.4
a
s
(
E
C
V
0.2
0
IC/IB=10
IC/IB=50
0.01 0.1 1 10
IC - Collector Current (Amps)
VCE(sat) v IC
2.0
)
s
t
l
o
1.5
V
(
-
)
t
a
s
(
1.0
E
B
V
0.5
Collector Current (Amps)
IC -
BE(sat)
V
IC/IB=10
IC/IB=50
v IC
100
n
i
a
G
d
e
s
i
l
a
m
r
o
N
-
E
F
h
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1
VCE=5V
VCE=10V
1
Collector Current (Amps)
IC -
10
100
100
300
200
- Typical Gain
FE
h
hFE v IC
10
VCE=5V
1000.0010.01 0.1
2.0
)
s
t
l
1.5
o
V
(
-
E
B
V
1.0
1
10
1000.001
0.5
0.01 0.1
Collector Current (Amps)
IC -
1
VBE(on) v IC
10
Single Pulse Test Tamb=25C
78
1
DC
1s
0.1
100ms
10ms
1ms
100
s
- Collector Current (A)
C
I
0.01
1
VCE - Collector Voltage (V)
Safe Operating Area
10
100
1000
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