Datasheet FZT705TC Specification

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FZT705
Document number: DS33160 Rev. 3 - 2
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Features
BV
CEO
> -120V
BV
CBO
> -140V
IC = 2A High Continuous Current  hFE > 2k for High Gain @ 2A  Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate
Data Sheet (FZT705Q)
Mechanical Data
Case: SOT223  Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
Lamp  Relay  Solenoid Driving
Product
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
FZT705TA
FZT705
7
12
1,000
FZT705TC
FZT705
13
12
4,000
SOT223
Top View
Device Symbol
Top View
Pin-Out
Green
YWW
FZT
705
FZT 705 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53)
SOT223
120V PNP DARLINGTON TRANSISTOR IN SOT223
Ordering Information (Note 4)
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
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FZT705
Document number: DS33160 Rev. 3 - 2
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Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-12
V
Continuous Collector Current
IC
-2
A
Peak Pulse Current
ICM
-4
A
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
3.0
W
(Note 6)
2.0
(Note 7)
1.6
(Note 8)
1.2
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
41.7
°C/W
(Note 6)
62.5
(Note 7)
78.1
(Note 8)
104
Thermal Resistance Junction to Lead
(Note 9)
R
θJL
12.9
Operating and Storage Temperature Range
T
J, TSTG
-55 to +150
°C
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
2,000
V
2
Electrostatic Discharge - Machine Model
ESD MM
≥ 200
V
B
Absolute Maximum Ratings (@T
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
ESD Ratings (Note 10)
= +25°C, unless otherwise specified.)
A
Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 5, except the device is mounted on minimum recommended pad layout.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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Thermal Characteristics and Derating Information
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Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-140 — —
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 11)
BV
CEO
-120 — —
V
IC = -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-12 — —
V
IE = -100µA
Collector-Base Cut-Off Current
I
CBO
-100
-10
nA µA
V
CB
= -120V
V
CB
= -120V, TA = +100°C
Collector-Emitter Cut-Off Current
I
CES
-10
µA
V
CE
= -80V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
= -8V
DC Current Gain (Note 9)
hFE
3,000 3,000 3,000 2,000
— —
30,000
IC = -10mA, V
CE
= -5V
IC = -100mA, V
CE
= -5V
IC = -1A, V
CE
= -5V
IC = -2A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 11)
V
CE(sat)
— — — —
-1.3
-2.5
V
IC = -1A, IB = -1mA IC = -2A, IB = -2mA
Base-Emitter Saturation Voltage (Note 11)
V
BE(sat)
-1.8
V
IC = -1A, IB = -10mA
Base-Emitter Turn-On Voltage (Note 11)
V
BE(on)
-1.7
V
IC = -1A, V
CE
=- 5V
Output Capacitance (Note 9)
C
obo
15 — pF
V
EB
= -10V, f = 1MHz
Current Gain-Bandwidth Product (Note 11)
fT
160 — MHz
V
CE
= -10V, IC = -100mA,
f=20MHz
Turn-On Time
ton
0.6 — µs
V
CC
= -10V, IC = -500mA
I
B1
= -IB2 = 0.5mA
Turn-Off Time
t
off
0.8 — µs
Electrical Characteristics (@T
Note: 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
= +25°C, unless otherwise specified.)
A
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Typical Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
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Document number: DS33160 Rev. 3 - 2
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SOT223
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00 C 0.20
0.30
0.25 D 6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00 e - - 4.60
e1
- - 2.30 L 0.85
1.05
0.95 Q 0.84
0.94
0.89
All Dimensions in mm
SOT223
Dimensions
Value (in mm)
C
2.30
C1
6.40 X 1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
X
C
C1 Y2
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking.
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Document number: DS33160 Rev. 3 - 2
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1. are intended to implant into the body, or
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IMPORTANT NOTICE
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