SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1– NOVEMBER 1998
FEATURES
* 500 Volt V
* 150mA continuous current
*P
tot
PARTMARKING DETAIL – FZT560
ABSOLUTE MAXIMUM RATINGS.
PARAM ET ER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Base-Emitter Turn On Voltage V
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching times t
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
= 2 Watt
CEO
=25°C P
amb
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
CBO
CES
EBO
V
CE(sat)
V
BE(sat)
BE(on)
h
FE
T
obo
on
t
off
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
-55 to +150 °C
-500 V
-500 V IC=-10mA*
-5 V
-100 nA VCB=-500V
-100 nA VCE=-500V
-100 nA VEB=-5V
-0.20
-0.5VV
-0.9 V IC=-50mA, IB=-10mA*
-0.9 V IC=-50mA, VCE=-10V*
100
80
300
300
15 typ
60 MHz IC=-10mA, VCE=-20V
8pFVCB=-20, f=1MHz
110 typ.
1.5 typ
ns
µs
FZT560
C
B
-500 V
-500 V
-5 V
-500 mA
-150 mA
2W
=-100µA
I
C
I
=-100µA
E
IC=-20mA, IB=-2mA
I
=-50mA, IB=-10mA*
C
IC=-1mA, VCE=-10V
I
=-50mA, VCE=-10V*
C
I
=-100mA, VCE=-10V*
C
f=50MHz
VCE=-100, IC=-50mA,
I
=-5mA,IB2=10mA,
B1
E
C
FZT560
TYPICAL CHARACTERISTICS
240
160
+25°C
1.6
1.2
IC/IB=10
0.8
0.4
0
1m
IC/IB=20
IC/IB=50
10m 100m
IC- Collector Current (A)
V
VCE=5V
+100°C
+25°C
80
-55°C
0
1m
10m 100m 1
IC- Collector Current (A)
CE(sat)
v I
C
hFE v IC
1.0
0.8
IC/IB=10
0.6
-55°C
0.4
0.2
0
+25°C
+100°C
+150°C
1m
10m 100m
IC- Collector Current (A)
V
1.0
IC/IB=10
0.8
0.6
0.4
0.2
0
1m
v I
CE(sat)
C
-55°C
+25°C
+100°C
+150°C
10m 100m
IC- Collector Current (A)
VBE(sat) v IC
1
0.75
0.25
0.1
0.5
-55°C
+25°C
+100°C
+150°C
0
1m
IC- Collector Current (A)
10m 100m
V
v I
BE(on)
C
0.01
0.001
DC
1s
100ms
10ms
1ms
100us
1
10 100 1000
VCE- Collector Emitter Voltage (V)
Safe Operating Area
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