
SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 - MARCH 2001
FZT1053A
FEATURES
CEO
= 75V
*V
C
* 4.5 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation Voltage
*High Gain
* Extremely Low Equivalent On-resistance; R
= 78mΩ at 4.5A
CE(sat)
B
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
=25°C † P
amb
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
150 V
75 V
7.5 V
10 A
4.5 A
500 mA
2.5 W
-55 to +150 °C
E
C
† The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.

FZT1053A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
150 250 V
150 250 V
75 100 V IC=10mA
150 250 V
7.5 8.8 V
0.9 10 nA VCB=120V
0.3 10 nA VEB=4V
1.5 10 nA V
21
55
150
160
350
30
75
200
210
440
900 1000 mV IC=3A, IB=100mA*
825 950 mV IC=3A, VCE=2V*
270
300
300
40
440
450
450
60
1200
20
Switching Times t
Transition Frequency f
Output Capacitance C
on
t
off
T
obo
162 ns
900 ns
140 MHz IC=50mA, VCE=10V
21 30 pF VCB=10V, f=1MHz
mV
mV
mV
mV
mV
UNIT
CONDITIONS.
I
=100µA
C
=100µA
I
C
=100µA, VEB=1V
I
C
=100µA
I
E
CES
IC=0.2A, IB=20mA*
I
=0.5A, IB=20mA*
C
I
=1A, IB=10mA*
C
I
=2A, IB=100mA*
C
I
=4.5A, IB=200mA*
C
IC=10mA, VCE=2V*
I
=0.5A, VCE=2V*
C
=1A, VCE=2V*
I
C
I
=4.5A, VCE=2V*
C
I
=10A, VCE=2V*
C
=2A, IB1=IB2=±20mA,
I
C
V
=50V
CC
=2A, IB1=IB2=±20mA,
I
C
V
=50V
CC
f=100MHz
=120V

FZT1053A
TYPICAL CHARACTERISTICS
0.8
+25°C
0.6
- (V)
0.4
CE(sat)
V
0.2
0
1m 100
IC/IB=10
IC/IB=30
IC/IB=100
10m 100m 1 10
IC- Collector Current (A)
VCE(sat) v IC
VCE=2V
600
400
200
- Typical Gain
FE
h
0
10m 100m 1 10
1m 100
IC - Collector Current (A)
hFE v IC
+100°C
+25°C
-55°C
0.8
IC/IB=30
0.6
- (V)
0.4
CE(sat)
V
0.2
0
1m 100
-55°C
+25°C
+100°C
+150°C
10m 100m 1 10
IC- Collector Current (A)
1.6
1.2
IC/IB=30
CE(sat)
V
v I
C
- (V)
0.8
BE(sat)
V
0.4
0
10m 100m 1 10
IC- Collector Current (A)
VBE(sat) v IC
-55°C
+25°C
+100°C
+150°C
1001m
VCE=2V
1.2
0.8
- (V)
BE(on)
0.4
V
0
10m 100m 1 10
1m 100
IC- Collector Current (A)
VBE(on) v IC
-55°C
+25°C
+100°C
+150°C
10
1
100m
- Collector Current (A)
C
10m
I
100m 100
DC
1s
100ms
10ms
1ms
100us
110
VCE- Collector Emitter Voltage (V)
Safe Operating Area

FZT1053A
SPICE PARAMETERS
*ZETEX FZT1053A Spice model Last revision 18/3/97
*
.MODEL FZT1053A
NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100
+ ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15
+ ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016
+ CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367
+ VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9
*
(C) 1997 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied free of charge by Zetex for
the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other
rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for
purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields
New Road, Chadderton, Oldham OL9 8NP
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Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
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